SKKT 162, SKKH 162 THYRISTOR BRIDGE,SCR,BRIDGE
®
SEMIPACK 2 Thyristor / Diode Modules
./-0
.//0 .%/0
. 933 5"33 5#33 5=33
. 633 5$33 5<33 5!33
-::* 5!$;36 -::* 5!$;5$ -::* 5!$;5< -::* 5!$;5!
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5633
-::* 5!$;56
SKKH 162
Features
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Typical Applications* %& 1)
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SKKT
1
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Symbol
Conditions
Values
Units
1*4. 1%
5637 * 2 6# (533) 8&7 ,";563>7 * 2 "# 8&7 ?$ ; ?!
5#! (553 ) 593 ; $"3
4 4
1/0-
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4
1*-0
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4 4 4B
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5 ! 3 6# 5 #
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4 F
B
SKKT 162
1*/0- 2 $#3 4 ( + )
.* .*(*C) *
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*+ 2 $# 8&7 1E 2 5 47 E; 2 5 4;F
5
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( ; ) ( +; ) G 1
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4;F .;F F 4
1
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4
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.J N N ; B
5!#
-::* -::
4 $5 4 $$
. 0 0
#3 7 7 5 ; 5 K
&
SKKH
06-02-2004 NOS
© by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 1L Power dissipation per thyristor vs. on-state current
Fig. 1R Power dissipation per thyristor vs. ambient temp.
Fig. 2L Power dissipation per module vs. rms current
Fig. 2R Power dissipation per module vs. case temp.
Fig. 3L Power dissipation of two modules vs. direct current
Fig. 3R Power dissipation of two modules vs. case temp.
2
06-02-2004 NOS
Š by SEMIKRON
SKKT 162, SKKH 162 THYRISTOR BRIDGE,SCR,BRIDGE
Fig. 4L Power dissipation of three modules vs. direct and rms current
Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 5 Recovered charge vs. current decrease
Fig. 6 Transient thermal impedance vs. time
Fig. 7 On-state characteristics
Fig. 8 Surge overload current vs. time
3
06-02-2004 NOS
Š by SEMIKRON
RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 9 Gate trigger characteristics
Dimensions in mm
& 4 $$
-::
& 4 $5 (-::*)
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON
4
06-02-2004 NOS
Š by SEMIKRON
SKKT 162, SKKH 162 THYRISTOR BRIDGE,SCR,BRIDGE products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
5
06-02-2004 NOS
Š by SEMIKRON