SKM 150GB123D 3 4 /5 6* #
Absolute Maximum Ratings Symbol Conditions IGBT
Values
38 4 /5 6*
*7
&*
./00
38 4 .50 6*
&*;
3 4 /5 6*
.50
+
3 4 :0 6*
..0
+
/00
+
&*; 4/%&*
= /0
<7
SEMITRANSÂŽ 3 IGBT Modules
.0
A
3 4 /5 6*
.50
+
3 4 :0 6*
.00
+
/00
+
38 4 .50 6*
..00
+
3 4 /5 6*
/00
+
3 4 :0 6*
.C5
+
C00
+
.DD0
+
500
+
3 8
' D0 BBB E .50
6*
3
'D0 BBB E ./5
6*
**
4 $00 >
*7
<7
@ ./00
? /0 >
38 4 ./5 6*
Inverse Diode &(
38 4 .50 6*
&(;
&(; 4/%&(
SKM 150GB123D
&(
4 .0 > B
SKM 150GAL123D
Freewheeling Diode &(
38 4 .50 6*
&(;
Features !
" ! # $ % & ' # ( ) # *+ &
" ,*- , *
- ./ /0
Typical Applications* +* 12
&(
4 .0 > B
38 4 .50 6*
Module & ;
+* . B
/500
3 4 /5 6* #
Characteristics Symbol Conditions IGBT <7
&*7
<7
4
*7 &*
<7
40
min.
typ.
max.
D 5
5 5
$ 5
0 .
0 C
38 4 /5 6*
. D
. $
38 4 ./5 6*
. $
. :
38 4 /56*
..
.D
F
38 4 ./56*
.5
.G
F
38 4 6* B
/ 5
C
# 4 . H
$ 5 .
: 5 . 5
( (
0 5
0 $
(
4 D +
*7
4
*7
38 4 /5 6* 38 4 ./5 6*
*70
*7
*7
* *
<7 4 .5
&* 4 .00 + *7 4 /5
<7
4 .5
<7 4 0
* I< ;<
7
##
#
<7
4 ': ' E/0
38 4 6* ;< 4 $ : F ;< ## 4 $ : F
7 ## ; 8'
GB
1
Units
4 $00 &*4 .00+ 38 4 ./5 6* <7 4 = .5 **
+ +
.000
*
/ 5
J
.$0 :0 .C D00 L0
C/0 .$0 5/0 .00
..
&<-3
Units
K K
0 .5
MNO
GAL
11-09-2006 RAA
Š by SEMIKRON
SKM 150GB123D Characteristics Symbol Conditions Inverse Diode (
4
&( 4 .00 +>
7*
min. <7
40
(0
typ.
max.
38 4 /5 6* B
/
/ 5
38 4 ./5 6* B
. :
38 4 /5 6*
. .
. /
G
.C
Units
38 4 ./5 6* (
ÂŽ
SEMITRANS 3 IGBT Modules
38 4 /5 6* 38 4 ./5 6*
&;; I
&( 4 .00 + N 4 .000 +NA
7
<7
; 8' ,
40 >
**
F F
38 4 ./5 6*
50 5
+ A*
4 $00
K
0 C
MNO
Freewheeling Diode SKM 150GB123D SKM 150GAL123D
(
4
&( 4 .50 +>
7*
<7
40
(0
38 4 /5 6* B
/
38 4 ./5 6* B
. :
/ 5
38 4 /5 6*
. .
. /
$
: L
38 4 ./5 6* (
38 4 /5 6* 38 4 ./5 6*
Features !
" ! # $ % & ' # ( ) # *+ &
" ,*- , *
- ./ /0
Typical Applications* +* 12
&;; I
&( 4 .00 +
7
<7
; 8' (,
40 >
38 4 /5 6* **
D0 5
+ A*
4 $00
K
0 /5
MNO
Module *7 ;**PE77P
.5 B '
; '
Q $
$
/0
3 4 /5 6*
0 C5
F
3 4 ./5 6*
0 5
F 0 0C:
MNO
C
5
/ 5
5
C/5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
GB
2
GAL
11-09-2006 RAA
Š by SEMIKRON
SKM 150GB123D
SEMITRANS® 3
Zth Symbol Zth(j-c)l
Conditions
Values
Units
; ; ; ;
4. 4/ 4C 4D 4. 4/ 4C
.05 C5 : / 0 0C 0 0C 0 00.D
QNO QNO QNO QNO
4D
0 000.
; ; ; ;
4. 4/ 4C 4D 4. 4/ 4C
/.0 L0 .$ D 0 0$/C 0 00:C 0 00C
QNO QNO QNO QNO
4D
0 000/
Zth(j-c)D
IGBT Modules SKM 150GB123D SKM 150GAL123D
Features !
" ! # $ % & ' # ( ) # *+ &
" ,*- , *
- ./ /0
Typical Applications* +* 12
GB
3
GAL
11-09-2006 RAA
© by SEMIKRON
SKM 150GB123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
11-09-2006 RAA
Š by SEMIKRON
SKM 150GB123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Zthp(j-c) = f (tp); D = tp/tc = tp*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
5
11-09-2006 RAA
Š by SEMIKRON
SKM 150GB123D UL Recognized
File no. E63 532
* , 5$
<-
6
* , 5$
<+
* , 5L R , 5$
11-09-2006 RAA
© by SEMIKRON