SKM 200GB123D . 5 16 7* #
Absolute Maximum Ratings Symbol Conditions IGBT *8
.9 5 16 7*
&*
.9 5 /62 7*
/122
122
+
. 5 ;6 7*
/;2
+
022
+
> 12
/2
B
. 5 16 7*
122
+
. 5 ;2 7*
/02
+
022
+
.9 5 /62 7*
/DD2
+
. 5 16 7*
1$2
+
. 5 ;2 7*
/;2
+
D22
+
/;22
+
622
+
. 9
' D2 CCC E /62 /16
7*
.
' D2CCCE /16
7*
1622
&*< 51%&*
=8
** 5 $22 ? =8 @ 12 ? *8 A /122
&(
.9 5 /62 7*
&(<
&(< 51%&(
SKM 200GB123D
&(
5 /2 ? C
SKM 200GAL123D
Freewheeling Diode
SKM 200GAR123D
&(
.9 5 /62 7*
&(<
&(< 51%&(
&(
5 /2 ? C
Features
.9 5 /16 7*
Inverse Diode
IGBT Modules
! " # $ % & ' # ( ) # *+ &
" ,*- , *
- . /0 12
Typical Applications* +* 34
.9 5 /62 7*
Module & <
+* / C
. 5 16 7* #
Characteristics Symbol Conditions IGBT =8
=8 5 *8 &* 5 $ +
&*8
=8 5 2 *8 5 *8
*82 *8
=8 5 /6
.9 5 16 7*
max.
Units
D 6
6 6
$ 6
2 /
2 0
+
/ D
/ $
.9 5 /16 7*
/ $
/ ;
.9 5 167*
F 00
G 00
H
.9 5 /167*
/2
/1 $$
H
&* 5 /62 + =8 5 /6 .9 5 7* C
1 6
0
* *
*8 5 16 =8 5 2
/2 / 6
/0 1
( (
2 ;
/ 1
(
J=
=8 5 '; ' E12
<=
.9 5 7* <= 5 6 $ H <= ## 5 6 $ H
8 ## < 9'
1
typ.
*8
8
##
#
GAL
min.
.9 5 16 7*
# 5 / !I
*
GB
Units
. 5 16 7*
&*<
SEMITRANSÂŽ 3
Values
** 5 $22 &*5 /62+ .9 5 /16 7* =8 5 '/6
/622
*
1 6
K
112 /22 1D $22 F2
D22 122 ;22 /22
/F
&=-.
L L
2 2G
MNO
GAR
13-01-2009 NOS
Š by SEMIKRON
SKM 200GB123D Characteristics Symbol Conditions Inverse Diode ( 5 8*
&( 5 /62 +? =8 5 2
(2
min.
typ.
max.
Units
.9 5 16 7* C
1
1 6
.9 5 /16 7* C
/ ;
.9 5 16 7*
/ /
/ 1
.9 5 /16 7* (
.9 5 16 7*
$
; F
.9 5 /16 7*
ÂŽ
SEMITRANS 3 IGBT Modules
&<< J
&( 5 /62 + N 5 /622 +NB
8
=8 5 '/6 ? 5 $22
< 9' ,
H H
.9 5 /16 7*
G2 ;
+ B*
$ $
L 2 16
MNO
1 6
Freewheeling Diode ( 5 8*
SKM 200GB123D
&( 5 122 +? =8 5 2
(2
SKM 200GAL123D
.9 5 16 7* C
1
.9 5 /16 7* C
/ ;
.9 5 16 7*
/ /
/ 1
D 6
$ 6
.9 5 /16 7*
SKM 200GAR123D
(
.9 5 16 7* .9 5 /16 7*
Features
! " # $ % & ' # ( ) # *+ &
" ,*- , *
- . /0 12
Typical Applications* +* 34
GB
2
GAL
&<< J
&( 5 122 + N 5 1222 +NB
8
=8 5 2 ? ** 5 $22
< 9' (,
.9 5 /16 7*
/12 //
+ B* L 2 /;
MNO
Module *8 <**PE88P
/6 C '
< '
Q $
$ D
12
!
. 5 16 7*
2 06
H
. 5 /16 7*
2 6
H 2 20;
MNO
0
6
1 6
6
016
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
GAR
13-01-2009 NOS
Š by SEMIKRON
SKM 200GB123D Zth Symbol Zth(j-c)l
Conditions
Values
Units
< < < <
5/ 51 50 5D 5/ 51 50
6G 10 $ ; / 1 2 20 2 22;F 2 221
QNO QNO QNO QNO
5D
2 2221
SKM 200GAL123D
< < < <
5/ 51 50 5D 5/ 51 50
/F2 $$ /1 1 2 20D; 2 22F1 2 2FF
QNO QNO QNO QNO
SKM 200GAR123D
5D
2 2221
SEMITRANS® 3
Zth(j-c)D
IGBT Modules SKM 200GB123D
Features
! " # $ % & ' # ( ) # *+ &
" ,*- , *
- . /0 12
Typical Applications* +* 34
GB
3
GAL
GAR
13-01-2009 NOS
© by SEMIKRON
SKM 200GB123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
13-01-2009 NOS
Š by SEMIKRON
SKM 200GB123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
13-01-2009 NOS
Š by SEMIKRON
SKM 200GB123D UL Recognized
File 63 532
* , 6$
* , 6$
6
=-
* , 6F 6$
13-01-2009 NOS
=+
* , 6; 6$
=+<
© by SEMIKRON