Three Phase Rectifier Bridges
PSD 55
IdAVM VRRM
= 58 A = 800-1800 V
Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800
VRRM V 800 1200 1400 1600 1800
Type PSD 55/08 PSD 55/12 PSD 55/14 PSD 55/16 PSD 55/18
~ ~ ~
Symbol
Test Conditions
IdAVM IFSM
TC = 85°C, module TVJ = 45°C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine
58 750 820
A A A
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
670 740
A A
TVJ = 45°C VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
2800 2820
A2 s A2 s
TVJ = TVJM VR = 0
t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
2250 2300
A2 s A2 s
-40 ... + 150 150 -40 ... + 150
°C °C °C
2500 3000
V∼ V∼
5 3 205
Nm Nm g
∫ i2 dt
TVJ TVJM Tstg VISOL Md Weight
50/60 HZ, RMS IISOL ≤ 1 mA
Maximum Ratings
t = 1 min t=1s
Mounting torque Terminal connection torque typ.
(M5) (M5)
Features • Package with screw terminals • Isolation voltage 3000 V∼ • Planar glasspassivated chips • Blocking voltage up to 1800 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394“)
Symbol
Test Conditions
Characteristic Value
IR
VR = VRRM VR = VRRM
≤ ≤
0.3 10.0
mA mA
VF VTO rT RthJC
IF = 150 A TVJ = 25°C For power-loss calculations only TVJ = TVJM
≤
1.6 0.85 8
V V mΩ
per diode; DC current per module
2.7 0.45
K/W K/W
RthJK
per diode; DC current per module
3.06 0.51
K/W K/W
dS dA a
Creeping distance on surface Creeping distance in air Max. allowable acceleration
7.8 7.8 50
mm mm m/s2
TVJ = 25°C TVJ = TVJM
POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
PSD 55 IF(OV) -----IFSM
60
IFSM (A) TVJ=45°C TVJ=150°C
A T=150°C
50
1.6
40
1.4
30
1.2
20
1
4 10 2 As
750
670 TVJ=45°C
10
3
TVJ=150°C
0 VRRM
10
0.8
T=25°C
1/2 VRRM
IF
0.6
0
VF
1
V
1 VRRM
10
1.5
0.4
0
1
10
Fig. 1 Forward current versus voltage drop per diode 200 [W]
10
2
3
t[ms] 10
2 2
1
10
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
4 t [ms]
6
10
Fig. 3 ∫i2dt versus time (1-10ms) per diode (or thyristor)
60
TC 65
PSD 55
0.17 0.05
175
= RTHCA [K/W]
0.3
70
70 75
DC sin.180°
[A]
80
150
rec.120° rec.60°
85
125
90
0.55
50
rec.30°
95 100
100
105 110
1.05
75
120
DC sin.180° rec.120° rec.60° rec.30°
50 25 PVTOT 0 10 IFAVM
30
30
115 125 130
2.55
135 140 145
°C 150
0 50 [A]
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient temperature
10 IdAV 0 50
100
150
200
T (°C) C
Fig.5 Maximum forward current at case temperature
4 K/W
Z thJK
3 ZthJC
2
1 Zth
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions