SKM 300GB123D . 4 05 6* #
Absolute Maximum Ratings Symbol Conditions IGBT
Values
.8 4 05 6*
*7
&*
/011
.8 4 /51 6*
&*<
. 4 05 6*
:11
+
. 4 ;1 6*
001
+
=11
+
&*< 40%&*
? 01
>7
SEMITRANSÂŽ 3
/1
C
. 4 05 6*
0$1
+
. 4 ;1 6*
/;1
+
=11
+
.8 4 /51 6*
0011
+
. 4 05 6*
:51
+
. 4 ;1 6*
0:1
+
$11
+
0E11
+
511
+
. 8
' =1DDDF /51
6*
.
' =1DDDF /05
6*
**
4 $11 @
*7
>7
B /011
&(
.8 4 /51 6*
&(<
&(< 40%&(
SKM 300GB123D
&(
4 /1 @ D
SKM 300GAL123D
Freewheeling Diode
SKM 300GAR123D
&(
.8 4 /51 6*
&(<
&(< 40%&(
&(
4 /1 @
Features !
A 01 @
.8 4 /05 6*
Inverse Diode
IGBT Modules
" ! # $ % & ' # ( ) # *+ &
" ,*- , *
- . ! /0 01
Typical Applications* +* 23
.8 4 /51 6*
Module & <
+* / D
0511
. 4 05 6* #
Characteristics Symbol Conditions IGBT >7
&*7
>7
4
*7 &*
>7
41
4 ; +
*7
4
*7
*71
*7 *7
* *
>7
4 /5
&* 4 011 +
*7 4 05
>7
4 /5
>7 4 1
.8 4 05 6*
J>
'; ' F01
<>
.8 4 6*
7
##
#
<> 4 = G H <> ## 4 = G H
7 ## < 8'
1
GAL
min.
typ.
max.
= 5
5 5
$ 5
1 /
1 :
+
/ =
/ $
.8 4 /05 6*
/ $
/ ;
.8 4 056*
5 5
G
H
.8 4 /056*
G 5
E 5
H
.8 4 056* D
0 5
:
.8 4 /056* D
: /
: G
# 4 / I
/; 0 5
0= : 0
( (
/
/ :
(
4 $11 &*4 011+ .8 4 /05 6* **
0111
*
0 5
K
051 E1 0; 551 G1
=11 /$1 G11 /11
0$
&>-.
Units
.8 4 05 6*
*
GB
Units
L L
1 1G5
MNO
GAR
08-09-2006 RAA
Š by SEMIKRON
SKM 300GB123D Characteristics Symbol Conditions Inverse Diode (
4
&( 4 011 +@
7*
min. >7
41
.8 4 05 6* D .8 4 05 6*
(1
typ.
max.
0
0 5
/ /
/ 0
= 5
$ 5
Units
.8 4 /05 6* (
.8 4 05 6* .8 4 /05 6*
&<< J
ÂŽ
SEMITRANS 3
&( 4 011 + N 4 =111 +NC
7
>7
< 8' ,
IGBT Modules
41 @
**
4
1 /;
&( 4 :11 +@
7*
>7
41
.8 4 05 6* D .8 4 05 6*
(
.8 4 05 6*
MNO
0
0 5
/ /
/ 0
:
= :
.8 4 /05 6* &<< J
&( 4 011 + N 4 :511 +NC
7
>7
41 @
**
Features !
< 8' (,
< '
Q $
$
" ! # $ % & ' # ( ) # *+ &
" ,*- , *
- . ! /0 01
Typical Applications* +* 23
2
L
SKM 300GAR123D
GAL
+ C*
.8 4 /05 6*
SKM 300GAL123D
GB
/15 /1
4 $11
(1
SKM 300GB123D
H
.8 4 /05 6*
Freewheeling Diode (
H
.8 4 /05 6*
/=1 :=
+ C*
4 $11
L
1 /5
MNO
01
Module *7 <**PF77P
/5 D '
. 4 05 6*
1 :5
H
. 4 /05 6*
1 5
H 1 1:;
MNO
:
5
0 5
5
:05
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
GAR
08-09-2006 RAA
Š by SEMIKRON
SKM 300GB123D Zth Symbol Zth(j-c)l
Conditions
Values
Units
< < < <
4/ 40 4: 4= 4/ 40 4:
5: /; 5 : / 1 = 1 1= 1 1/;E 1 11/G
QNO QNO QNO QNO
4=
1 11:
SKM 300GAL123D
< < < <
4/ 40 4: 4= 4/ 40 4:
1 //5/ 1 1505 1 1/// 1 1100 1 1:$$ 1 1//: 1 11:
QNO QNO QNO QNO
SKM 300GAR123D
4=
1 1110
SEMITRANS® 3
Zth(j-c)D
IGBT Modules SKM 300GB123D
Features !
" ! # $ % & ' # ( ) # *+ &
" ,*- , *
- . ! /0 01
Typical Applications* +* 23
GB
3
GAL
GAR
08-09-2006 RAA
© by SEMIKRON
SKM 300GB123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
08-09-2006 RAA
Š by SEMIKRON
SKM 300GB123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
08-09-2006 RAA
Š by SEMIKRON
SKM 300GB123D UL Recognized
File 63 532
* , 5$
>-
6
* , 5$
>+
* , 5G R , 5$
08-09-2006 RAA
>+<
* , 5; R , 5$
© by SEMIKRON