SKM 400GB123D . 4 05 6* #
Absolute Maximum Ratings Symbol Conditions IGBT *7
.8 4 05 6*
&*
.8 4 /51 6*
&*=
/011
:11
+
. 4 ;1 6*
<<1
+
$11
+
? 01
/1
C
. 4 05 6*
<D1
+
. 4 ;1 6*
0$1
+
$11
+
0;;1
+
511
+
' :1EEEF /51
6*
' :1EEEF /05
6*
0511
&*= 40%&*
IGBT Modules SKM 400GB123D
** 4 $11 @ >7 A 01 @ *7 B /011
Units
. 4 05 6*
>7
SEMITRANSÂŽ 3
Values
.8 4 /05 6*
Inverse Diode &(
.8 4 /51 6*
&(=
&(= 40%&(
&(
4 /1 @ E
.8 4 /51 6*
Module & = . 8 .
Features
! " # $ % & ' # ( ) # *+ &
" ,-* , *
- . /0 01
Typical Applications* +* 23
+* / E
. 4 05 6* #
Characteristics Symbol Conditions IGBT >7
>7 4 *7 &* 4 /0 +
&*7
>7 4 1 *7 4 *7
*71 *7 *7 * *
>7 4 /5
min.
typ.
max.
Units
: 5
5 5
$ 5
.8 4 05 6*
1 /
1 <
+
.8 4 05 6*
/ :
/ $
.8 4 /05 6*
/ $
/ ;
.8 4 056*
< $$
: $$
G
.8 4 /056*
5
$ <<
G
&* 4 <11 + >7 4 /5 .8 4 6* E
0 5
<
*7 4 05 >7 4 1
00 < <
<1 :
( (
/ 0
/ $
(
# 4 / !H
* I>
>7 4 '; ' F01
<111
=>
.8 4 6*
/ 05
7
##
#
=> 4 < < G => ## 4 < < G
7 ## = 8'
** 4 $11 &*4 <11+ .8 4 /05 6* >7 4 ? /5
011 //5 <; L01 ;1
* J :11 001 D11 /11
:1
&>-.
K K
1 15
MNO
GB
1
11-09-2006 RAA
Š by SEMIKRON
SKM 400GB123D Characteristics Symbol Conditions Inverse Diode ( 4 7*
&( 4 <11 +@ >7 4 1
(1
min.
typ.
max.
Units
.8 4 05 6* E
0
0 5
.8 4 /05 6* E
/ ;
.8 4 05 6*
/ /
/ 0
.8 4 /05 6* (
ÂŽ
SEMITRANS 3 IGBT Modules
.8 4 05 6*
<
: <
.8 4 /05 6* &== I
&( 4 <11 + N 4 0111 +NC
7
>7 4 1 @ ** 4 $11
= 8' ,
G G
.8 4 /05 6*
/:1 /<
+ C* K 1 /05
MNO
01
!
Module SKM 400GB123D
*7 =**PF77P
/5 E '
= '
Q $
Features
! " # $ % & ' # ( ) # *+ &
" ,-* , *
- . /0 01
. 4 05 6*
1 <5
G
. 4 /05 6*
1 5
G
<
1 1<;
MNO
5
<05
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
Typical Applications* +* 23
GB
2
11-09-2006 RAA
Š by SEMIKRON
SKM 400GB123D
SEMITRANS® 3
Zth Symbol Zth(j-c)l
Conditions
Values
Units
= = = =
4/ 40 4< 4: 4/ 40 4<
<0 /: < : 1 $ 1 1::L 1 1/00 1 11:
QNO QNO QNO QNO
4:
1 1110
= = = =
4/ 40 4< 4: 4/ 40 4<
;1 << /1 0 / ; 1 15 1 115L 1 11<:
QNO QNO QNO QNO
4:
1 111<
Zth(j-c)D
IGBT Modules SKM 400GB123D
Features
! " # $ % & ' # ( ) # *+ &
" ,-* , *
- . /0 01
Typical Applications* +* 23
GB
3
11-09-2006 RAA
© by SEMIKRON
SKM 400GB123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
11-09-2006 RAA
Š by SEMIKRON
SKM 400GB123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
11-09-2006 RAA
Š by SEMIKRON
SKM 400GB123D UL Recognized
File 63 532
* , 5$
>-
6
* , 5$
11-09-2006 RAA
© by SEMIKRON