SKM 75GD123D - 2 34 5* '
Absolute Maximum Ratings Symbol Conditions IGBT *6
-7 2 34 5*
%*
-7 2 /49 5*
%*<
/399
:4
1
- 2 ;9 5*
49
1
/99
1
> 39
-7 2 /34 5*
/9
B
- 2 34 5*
:4
1
- 2 ;9 5*
49
1
/99
1
449
1
/99
1
& D9 CCCE /49
5*
& D9 CCCE /34
5*
3499
%*< 23$%*
IGBT Modules SKM 75GD123DL
** 2 #99 ? =6 @ 39 ? *6 A /399
Inverse Diode %(
-7 2 /49 5*
%(<
%(< 23$%(
%(
2 /9 ? C
SKM 75GD123D
Module
SKM 75GDL123D
% <
-7 2 /49 5*
- 7 -
Features
! "
# $ % & ' ( ) ' * %
" +*, + , - . /0
Typical Applications*
+* " - ' 1*
'
- 2 34 5* '
Characteristics Symbol Conditions IGBT =6
=6 2 *6 %* 2 3 1
%*6
=6 2 9 *6 2 *6
*69 *6 *6 * *
=6 2 /4 %* 2 49 1 =6 2 /4 *6 2 34 =6 2 9
min.
typ.
max.
Units
D 4
4 4
# 4
-7 2 34 5*
9 D
/ 3
1
-7 2 34 5*
/ D
/ #
-7 2 /34 5*
/ #
/ ;
-7 2 345*
33
3;
F
-7 2 /345*
09
0;
F
-7 2 5* C
3 4
0
' 2 / !G
0 0 9 4
D 0 9 #
( (
*
9 33
9 0
(
6
''
'
DD 4# ; 0;9 :9
/99 /99
H
< 7&
1
1* / C
<= 2 33 F <= '' 2 33 F
6 ''
GD
Units
- 2 34 5*
=6
SEMITRANSÂŽ 6
Values
** 2 #99 %*2 491 -7 2 /34 5* =6 2 > /4
499 /99
4
%=,-
H 9 03
IJK
GDL
13-01-2009 NOS
Š by SEMIKRON
SKM 75GD123D Characteristics Symbol Conditions Inverse Diode ( 2 6*
%( 2 49 1? =6 2 9
(9
min.
typ.
max.
Units
-7 2 34 5* C
3
3 4
-7 2 /34 5* C
/ ;
-7 2 34 5*
/ /
/ 3
-7 2 /34 5* (
ÂŽ
SEMITRANS 6 IGBT Modules
-7 2 34 5*
/;
3#
-7 2 /34 5* %<< L
%( 2 49 1 J 2 ;99 1JB
6
=6 2 9 ? ** 2 #99
< 7& +
F F
-7 2 /34 5*
04 :
1 B*
3 3
H 9 #
IJK
#9
!
9 94
IJK
Module SKM 75GD123DL SKM 75GD123D SKM 75GDL123D
*6 < &
M 4
Features
! "
# $ % & ' ( ) ' * %
" +*, + , - . /0
D
4
/:4
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
Typical Applications*
+* " - ' 1*
'
GD
2
GDL
13-01-2009 NOS
Š by SEMIKRON
SKM 75GD123D Zth Symbol Zth(j-c)l
Conditions
Values
Units
< < < <
2/ 23 20 2D 2/ 23 20
3D9 #; . 3 3 ; 9 9# 9 933; 9 99/0
MJK MJK MJK MJK
2D
9 9993
SKM 75GD123D
< < < <
2/ 23 20 2D 2/ 23 20
D99 /#; 3; D 9 9;0/ 9 9//3 9 99/0
MJK MJK MJK MJK
SKM 75GDL123D
2D
9 9;
SEMITRANS® 6
Zth(j-c)D
IGBT Modules SKM 75GD123DL
Features
! "
# $ %
& ' ( ) ' * %
" +*, + , -
. /0
Typical Applications*
+* " - ' 1*
'
GD
3
GDL
13-01-2009 NOS
© by SEMIKRON
SKM 75GD123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
13-01-2009 NOS
Š by SEMIKRON
SKM 75GD123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
13-01-2009 NOS
Š by SEMIKRON
SKM 75GD123D UL Recognized
File 63 532
* + 4#
* + #:
6
=+
* + :0
13-01-2009 NOS
=+
© by SEMIKRON