TECHNOLOGY I RF DEVICES
Prototype 4-inch RF GaN-on-GaN wafer)
GaN RF HEMTs: Powering ahead with native substrates GaN-on-GaN high-power amplifiers with through-substrate vias are delivering record-breaking power-added efficiencies and continuouswave operation BY NAOYA OKAMOTO AND YUSUKE KUMAZAKI FROM FUJITSU LIMITED 44 ISSUE I 2022
Fujitsu v4RS 5MG.indd 44
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