TECHNOLOGY I GaN ELECTRONICS
Taking GaN CMOS to the IC Forming logic circuits with a power HEMT platform that features a p-GaN gate provides a significant step towards unlocking the full potential of GaN integration BY ZHEYANG ZHENG, LI ZHANG AND KEVIN CHEN FROM THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY CMOS TECHNOLOGY continues to prevail in very large-scale and mixed-signal ICs. In these forms of circuit, CMOS has dominated for the past four decades, thanks to topping the list of the most energyefficient circuit topologies. Whenever new electronic devices are explored in other semiconductor materials, there is a hunt for complementary devices, to see whether this could lead to a superior successor
to silicon CMOS. However, such a pursuit tends to be full of obstacles, with GaN providing a typical example. This wide-bandgap semiconductor, blessed with an inherent capability to form a very high-mobility two-dimensional electron gas (2DEG) channel, has many attractive attributes. This has driven widespread
A 15-stage
GaN CMOS ring oscillator and a schematic of a typical GaN CMOS inverter.
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