MSI Thin Film Catalog by The BluesWorks, Inc.

Mini-Systems Thin Film Division PERFORMANCE

www.Mini-SystemsInc.com CHIP RESISTORS

Silicon, Alumina, BeO, Quartz, Glass, Aluminum Nitride Substrates Absolute T.C.R.’s to ±2ppm Resistance range from 0.050 Ω (50m Ω) to 300M Ω

Knowledgeable service, sales, and engineering support Dock-to-stock quality

Hi-Meg Resistors

Quick response to critical requirements and questions Customized solutions to your thin film requirements

Excellent resistor stability Wire bondable and surface mount terminations Power through 40 Watts

Highly trained, dedicated staff

PRECISION

Chip Resistors

Controlled environment ensures top quality precision devices

QPL surface mount resistors

Innovative standard designs with tight tolerances and low TT.C.R.’ .C.R.’ .C.R.’ss

MICROWAVE PRODUCTS Chip resistors and terminations Chip attenuators

Resistor networks feature tight ratio tolerances ((±0.005%) 0.005%) and excellent TC tracking ((±1ppm/ 1ppm/ C) 1ppm/°C) Photo patterned geometries down to < 2µ-inch lines and spaces

Microwave & RF Resistors

Frequency through 40 GHz

MET ALLIZED SUBSTRA TES METALLIZED SUBSTRATES

Automated die inspection and handling systems provide greater efficiency C 25ppm/°C Standard NiCr TCR ±25ppm/ 25ppm/

TaN, NiCr, SiCr, Pd, TiW, Ni, Al, and Au

Standard Absolute TTolerances olerances start at 0.01%

Consult Sales Department for custom requirements

DELIVERY _

Chip Attenuators

NETWORKS Tight tolerance conductor lines and spaces

Most standard parts in 4 weeks or less Enhanced order entry and tracking systems insure schedules

Plated thru holes Low matching ratios and T.C.R./TC tracking RSMT, RSMT-23, RSMA and hermetic flatpack packaged

are met Specialized Substrate Metallization

RELIABILITY

Passive Components

SPC enhanced processing

QPL Resistors qualified to “R” Failure Rate in July 1999

resistors RC Networks SMT Networks

Element evaluation per MIL-H-38534 for Class H and K

CHIP CAP ACITORS CAPACITORS

Complete MIL-PRF-55342 testing in-house

APPLICATIONS Military

Medical / Implantables

Commercial

Dielectric: Silicon Dioxide Bond Pads: Aluminum or Gold

RC Networks

Mini-Systems, Inc. has provided microelectronic leadership since 1968. For more information about our newest products, technical assistance on your next Thin Film application, please call, fax, or e-mail . We invite you to visit our Web site at www.Mini-SystemsInc.com

Telecommunications, Microwave

Thin film / Thick film hybrids

Single and binary styles

Aerospace

MINI-SYSTEMS, INC. THIN FILM DIVISION

Thin Film Division

20 David Road, P.O. Box 69, North Attleboro, MA 02761-0069 508-695-0203 Fax: 508-695-6076 E-mail: msithin@mini-systemsinc.com THICK FILM DIVISION

20 David Road, P.O. Box 69, North Attleboro, MA 02761-0069 Thick Film Division 508-695-0203 Fax: 508-695-6076 E-mail: msithick@mini-systemsinc.com

Recipient of Corporate Achievement Award

ELECTRONIC P ACKAGE DIVISION PACKAGE 168 E. Bacon Street, P.O. Box 1597, Plainville, MA 02762-0597 508-695-2000 Fax: 508-695-8758 E-mail: msipkg@mini-systemsinc.com

You may charge your order on VISA or MASTERCARD.

DCNTF-129-E-0306

Introducing the SMALLEST chip resistor 12 x 9 mils, where size is CRITICAL!

INDEX OF THIN FILM PRODUCTS COVER SHEET - THIN FILM DIVISION LEADS THE W AY WA INDEX OF THIN FILM PRODUCTS PROCESS CAP ABILITIES CAPABILITIES MSIRP RELIABILITY PROGRAM

MSDR 3 SERIES DUAL RESISTOR NETWORKS MSIR 3 SERIES DUAL ISOLA TED RESISTOR NETWORKS ISOLATED MRCN SERIES - RC NETWORKS MSRA, MSRB, MSRC RESISTOR ARRA YS ARRAYS MSMT 116 SERIES LOG RESISTORS MSMT 117, 125 SERIES MUL TIT AP RESISTORS MULTIT TITAP

NETWORKS & ARRA YS ARRAYS

Mini-SMT ACE MOUNT RESISTOR CHIPS Mini-SMT,, RSMT SURF SURFACE Mini-SMT -23 SURF ACE MOUNT RESISTOR CHIPS Mini-SMT,, RSMT RSMT-23 SURFACE Mini-SMT ACE MOUNT RESISTOR NETWORKS Mini-SMT,, RSMA SURF SURFACE Mini-SMT Mini-SMT,, RSMA Schematics

PACKAGED RESISTORS

MSJC AND WAJC SERIES CHIP JUMPERS CUSTOM P ATTERNED SUBSTRA TES PA SUBSTRATES KITS - MSTF RESISTORS AND MSCC CAP KITS KITS - W ATF SERIES SURF ACE MOUNT CHIPS WA SURFACE

JUMPERS, SUBSTRA TES SUBSTRATES & KITS

20 DAVID ROAD, N. ATTLEBORO, MA 02760 508-695-6076 FAX: 508-695-6076 DCN TF 135-F-0306

MSCC SERIES MOS CAP ACITORS CAPACITORS ACITORS CAPACITORS MSBIN SERIES BINARY CHIP CAP

CHIP CAP ACITORS CAPACITORS

THIN FILM DIVISION

MSA T 1, 2, 3, 10 SERIES CHIP A TTENUA TORS MSAT ATTENUA TTENUATORS MSA T 5, 6, 7 SERIES POWER CHIP A TTENUA TORS MSAT ATTENUA TTENUATORS MSA T 21, 22, 23 SERIES POWER CHIP A TTENUA TORS MSAT ATTENUA TTENUATORS

CHIP ATTENUA TORS TTENUATORS

MINI-SYSTEMS, INC.

MICROWAVE & RF RESISTORS

MSMW SERIES MICROWAVE CHIP RESISTORS AVE CHIP TERMINA TIONS WAMT SERIES MICROW MICROWA TERMINATIONS

CHIP RESISTORS

MSMR 1 SERIES 0.012" X 0.009" CHIP RESISTORS MSTF 1 SERIES 0.015" X 0.015" CHIP RESISTORS MSTF 2 SERIES 0.020" X 0.020" CHIP RESISTORS MSTF 3 SERIES 0.030" X 0.030" CHIP RESISTORS MSTF 35 SERIES 0.035" X 0.035" CHIP RESISTORS MSTF 4, MSTF 6 & MSDR 4 SERIES HIGH MEGOHM CHIP RESISTORS MSTF SERIES NON-MICROWAVE CHIP RESISTOR WATF SERIES SURF ACE MOUNT CHIP RESISTORS SURFACE MSSR 3 SERIES LASER CODABLE CHIP RESISTORS MSHR UL TRA HIGH V ALUE CHIP RESISTORS ULTRA VALUE MSPR 1 SERIES POWER CHIP RESISTORS PTSM & PTWB 5 W ATT POWER TERMINA TORS WA TERMINATORS MSBC SERIES BACK CONT ACT CHIP RESISTORS CONTACT EMSBC SERIES BACK CONT ACT CHIP RESISTORS CONTACT

PROCESS CAP ABILITIES CAPABILITIES COMP ANY PROFILE COMPANY

BELL JAR

CATHODE SHIELD

SUBSTRATES HIGH-VOLTAGE LEAD

CATHODE ANODE HEATER

HIGH-VOLTAGE SHIELD

HIGH VOLTAGE

ARGON INLET

TO VACUUM PUMP

CROSSSECTION OF A SIMPLE SPUTTERING APP ARA TUS APPARA ARATUS

TARGET ATOMS

MINI-SYSTEMS, INC. WAS FOUNDED IN 1968 BY GLEN E. ROBERTSON. OUR PRIMARY GOAL IS TO MANUFACTURE PRECISION, HIGH RELIABILITY COMPONENTS FOR THE HYBRID AND MICROELECTRONICS INDUSTRY INDUSTRY.. MINI-SYSTEMS, INC. IS COMPRISED OF THREE DIVISIONS: • THICK FILM DIVISION: THICK FILM PRECISION CHIP RESISTORS, QPL RESISTORS • ELECTRONIC PACKAGE DIVISION: GLASS WALL AND MICROWAVE PACKAGES • THIN FILM DIVISION: THIN FILM P ASSIVE COMPONENTS PASSIVE

THIN FILM PRODUCTS • • • • • • • •

CHIP RESISTORS; SINGLE, BACK CONT ACT TIT APS, ARRA YS AND NETWORKS CONTACT ACT,, CENTER TTAP AP,, DUAL, MUL MULTIT TITAPS, ARRAYS AP MICROW AVE RESISTORS, TERMINA TIONS, AND A TTENUA TORS MICROWA TERMINATIONS, ATTENUA TTENUATORS MOS, BINARY CHIP CAPACITORS AND RC NETWORKS PACKAGED RESISTORS; RSMT RSMT,, RSMA & CSMA STYLES MET ALLIZED SUBSTRA TES; SINGLE OR DOUBLE SIDED, POLISHED OR AS FIRED METALLIZED SUBSTRATES; CUSTOM RESISTOR NETWORKS, CAP ACITOR NETWORKS, P ATTERNED SUBSTRA TES AND CIRCUITS CAPACITOR PA SUBSTRATES SMT RESISTORS AND RESISTOR ARRAYS CHIP JUMPERS, INDUCTORS *NOTE: ARRA Y COMBINA TIONS A VAILABLE FOR ALL STYLES ARRAY COMBINATIONS AV

APPLICA TIONS APPLICATIONS • • • • • • • • • • • • •

HIGH RELIABILITY MICROELECTRONICS MILIT ARY MILITARY SPACE SA TELLITE SATELLITE MEDICAL IMPLANT ABLE IMPLANTABLE BIOTELEMETRY MICROWAVE SURFACE MOUNT HYBRID RESEARCH COMMUNICA TIONS COMMUNICATIONS MCM'S CRYOGENICS

MET ALLIZA TION & SUBSTRA TES METALLIZA ALLIZATION SUBSTRATES DEPOSITION SPUTTERED ATOM

SPUTTERED ATOM

NEUTRALIZED GAS MOLECULE FROM TARGET

BOMBARDING IONIZED GAS MOLECULAR

SPUTTERING COLLISION PROCESS GLOW DISCHARGE SPUTTERING FIRST OBSERVED IN THE MID 1800'S

TITUNGSTEN NICKEL ALUMINUM GOLD

NICHROME TANT ALUM NITRIDE ANTALUM SICHROME PALLADIUM FILM THICKNESSES: FILM RESISTIVITIES: RESISTIVE TCR:

FROM 50Å TO 50KÅ FROM 11Ω Ω /Sq. TO 10K Ω / Sq. 10KΩ TO < 5ppm/°C

SUBSTRA TE SUBSTRATE ST ANDARD STANDARD SILICON ALUMINA QUARTZ GLASS ALUMINUM NITRIDE SIZES: SURF ACE FINISHES: SURFACE

CUSTOM BeO LTCC

TO 4" X 4" ST STANDARD ANDARD FROM POLISHED TO 20 µ-inches

THRU-HOLE AND FILLED VIAS AVAILABLE PREFERRED VIA DIAMETER TO SUBSTRA TE THICKNESS RA TIO IS 1:1 SUBSTRATE RATIO

EQUIPMENT SPUTTERING RF DIODE AND DC MAGNETRON SPUTTERING PE CVD (SiO2) DEPOSITION OXIDA TION FURNACE OXIDATION

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 120-C-0306

PROCESS CAP ABILITIES CAPABILITIES EQUIPMENT PHOTOLITHOGRAPHY PHOTORESIST SYSTEMS NEGA TIVE AND POSITIVE PHOTORESIST SYSTEMS NEGATIVE LARGE P ANEL (UP TO 24" X 24") ALIGNMENT PANEL PATTERN PLA TING, WET AND DRY ETCH FFABRICA ABRICA TION TECHNIQUES PLATING, ABRICATION LINE WIDTH DEFINITION RESISTOR P ATTERNING TO 2 MICRONS PA CONDUCTOR LINE WIDTHS - 100 µ" OF GOLD; 0.5 mils (20 MICRONS) ±0.05 mils PHOTO MASK PREFERRED MASK SIZE 5" X 5", UP TO 12" X 12" CUSTOM MASK TONES PREFERRED RESISTOR LEVEL MASK TONE DARK IMAGE / CLEAR FIELD CONDUCTOR LEVEL MASK TONE DARK FIELD / CLEAR IMAGE GLASSIV ATION LEVEL MASK TONE DARK IMAGE / CLEAR FIELD GLASSIVA

LASER TRIMMING ESI MODEL 44 THIN FILM LASER TRIMMERS TRIM TOLERANCES TO 0.01% OR 2 MILLIOHMS RESOLUTION

SEP ARA TION SEPARA ARATION DIAMOND SA W SEP ARA TION OF SILICON, ALUMINA, AND QUARTZ SAW SEPARA ARATION LASER MACHINING A VAILABLE AV

DIE HANDLING AND SORTING AUTOMA TIC TEST AND INK MARKING SYSTEM AUTOMATIC AUTOMA TIC AND SEMI-AUTOMA TIC TTAPE APE TO W AFFLE P ACK DIE PICKERS AUTOMATIC SEMI-AUTOMATIC WAFFLE PACK HIGH POWER MET ALLURGICAL INSPECTION MICROSCOPES METALLURGICAL TAPE AND REEL, W AFFLE P ACK, GEL P ACK WAFFLE PACK, PACK VISUAL INSPECTION PER CLASS K, H OR COMMERCIAL (-Z OPTION IN PART NUMBER)

QA SYSTEMS ISO 9001:2000 CERTIFIED 100% VISUAL AND DC ELECTRICAL INSPECTION PER MIL-STD-883 COMPLETE MIL-PRF-55342 TESTING CAP ABILITIES CAPABILITIES ELEMENT EV ALUA TION PER MIL-H-38534, CLASS H AND K EVALUA ALUATION SPC PROCESS MONITORING, PFMEA MINI-SYSTEMS, INC. RELIABILITY PROGRAM, MSIRP TM

ENGINEERING SYSTEMS AUTOCAD, FILE FORMA TS HANDLED INCLUDE DXF & IGES. FORMATS COMPREHENSIVE DESIGN REVIEW AND TESTING

ELECTRICAL PERFORMANCE POWER DERATING CURVE

TYPICAL LIFE TEST RESULTS PERCENT OF RATED POWER

PERCENT DEVIATION DEVIA

0.050 0.040 0.030 0.020 0.010 0.000 100

250 TIME (HOURS)

500

1000

110 100 90 80 70 60 50 40 30 20 10 0

10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180

Nichrome, 70˚C 70 C @ 250 mWatts mW

TEMPERATURE (˚C)

CONSULT SALES WITH YOUR SPECIAL REQUIREMENTS

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 120-C-0306

MSIRP Reliability Program TEM S YS S , I THIN FILM

C. IN

MI N

IL IT

• • • •

A LI

DIVISION

SAMPLES BEING SELECTED

RE B

MSIRP

The reliability program will provide customers with real-time data on similar products. Samples are selected at random by inspectors in the production line and sent to MSI's Quality Assurance department for testing. When requested, the data will accompany a certificate of conformance (at no charge to the customer) when no other testing is required. The data will be displayed in a graphical representation and plotted against military standard criteria.

Y PR

SAMPLES ARE SELECTED A T RANDOM AT SAMPLES ARE EITHER MSTF-2 OR MSTF-3 SERIES P ARTS PARTS SUBSTRA TE MA TERIAL IS EITHER SILICON OR CERAMIC SUBSTRATE MATERIAL DA TA IS ALSO TTAKEN AKEN FROM P ARTS THA T ARE CURRENTL Y BEING DAT PARTS THAT CURRENTLY TESTED AND MEET THE PREVIOUS REQUIREMENTS

APPLICABLE MILIT ARY ST ANDARDS MILITARY STANDARDS

• •

MIL-PRF-55342, CHARACTERISTIC "H" MIL-STD-202, METHOD 108 & 2011

TESTS BEING PERFORMED

•

LIFE TEST

1000 HOURS (+72/-24 HRS), 70°C (±5°C), 250mW ∆R REQUIREMENTS ±.50%, FFAILURE AILURE RA TE R RATE

•

THERMAL SHOCK TEST

5 CYCLES, -65°C (+0/-10°C) TO 150°C (+10/-0°C) ∆R REQUIREMENTS ±.25%

•

HIGH TEMPERA TURE EXPOSURE TEMPERATURE

100 HOURS (±4 HRS) A T 150°C (±5°C) AT ∆R REQUIREMENTS ±.20%

•

WIREBOND EV ALUA TION EVALUA ALUATION

THERMOSONIC, 1 MIL GOLD WIRE 3 GRAMS MINIMUM BOND PULL

DA TA DAT

•

DA TA WILL BE SUPPLIED WITH A CERTIFICA TE OF CONFORMANCE FOR ORDERS THA T DO NOT DAT CERTIFICATE THAT REQUIRE TESTING

• •

THIS DA TA IS FOR TTANT ANT ALUM AND NICHROME RESISTORS DAT ANTALUM CHARTS ARE UPDA TED PERIODICALL Y AND ARE A VAILABLE ON THE WEB P AGE UPDATED PERIODICALLY AV PAGE

FOR MORE INFORMA TION CONT ACT THE MSI THIN FILM QUALITY ASSURANCE DEP ARTMENT INFORMATION CONTACT DEPARTMENT ARTMENT:: MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, PHONE: (508) 695-0203 FAX: (508) 695-6076 E-MAIL: MSITHIN@MINI-SYSTEMSINC.COM .Mini-SystemsInc.com WEB P AGE: www PAGE: www.Mini-SystemsInc.com

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 140-B-0306

MSIRP Reliability Program TM

Front page of a Certificate of Conformance Signed by the Q.A. Manager Custom layouts available with alternate information available by request

Back page of a Certificate of Conformance, containing data on either Tantalum Nitride or Nichrome

THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 148-B-0306

AVG. CHANGE IN %

0542 0541 0540 0539 0538 0537 0536 0535 0534 0533 0532 0531 0530 0529 0528 0527 0526 0525 0524 0523 0522 0521 0520 0517 0516 AVG. CHANGE IN %

0542 0541 0540 0539 0538 0537 0536 0535 0534 0533 0532 0531 0530 0529 0528 0527 0526 0525 0524 0523 0522 0521 0520 0517 0516

AVG. CHANGE IN % AVG. CHANGE IN %

0549 0548 0547 0546 0545 0544 0543 0542 0541 0540 0539 0538 0537 0536 0535 0534 0533 0532 0531 0530 0529 0528 0527 0526 0525

WIREBOND DATA - NICHROME THERMOSONIC, 1 MIL GOLD WIRE MIL-STD-883, METHOD 2011, 3 GRAMS MINIMUM

THERMAL SHOCK DATA - NICHROME 5 CYCLES (-65˚C TO +150˚C) MIL-PRF-55342,CHARATERISTIC H, DELTA R ±0.25%

0542 0541 0540 0539 0538 0537 0536 0535 0534 0533 0532 0531 0530 0529 0528 0527 0526 0525 0524 0522 0521 0520 0518 0517 0516

AVG. CHANGE IN %

DESTRUCT TEST (GRAMS)

MINI-SYSTEMS, INC.

HIGH TEMP. EXP. DATA- TANTALUM 100 HOURS AT 150 ˚C MIL-PRF-55342, CHARACTERISTIC H, DELTA R ±0.2%

0542 0541 0540 0539 0538 0537 0536 0535 0534 0533 0532 0531 0530 0529 0528 0527 0526 0525 0524 0522 0521 0520 0518 0517 0516 DESTRUCT TEST (GRAMS)

Periodic updates are available on the web at www.Mini-SystemsInc.com

LIFE TEST DATA - NICHROME 250 mW, 70 ˚C, 1000 HOURS MIL-PRF-55342,CHARATERISTIC H, DELTA R ±0.5%, FAILURE RATE P

0549 0548 0547 0546 0545 0544 0543 0542 0541 0540 0539 0538 0537 0536 0535 0534 0533 0532 0531 0530 0529 0528 0527 0526 0525

" When absolute quality is a must, and proof is required, ask for MSIRPTM . . . . only at Mini-Systems is actual data provided to the customer on a weekly basis "

WIREBOND DATA - TANTALUM THERMOSONIC, 1 MIL GOLD WIRE MIL-STD-883, METHOD 2011, 3 GRAMS MINIMUM

THERMAL SHOCK DATA - TANTALUM 5 CYCLES (-65˚C TO +150˚C) MIL-PRF-55342,CHARATERISTIC H, DELTA R ±0.25%

HIGH TEMP. EXP. DATA- NICHROME 100 HOURS AT 150 ˚C MIL-PRF-55342,CHARATERISTIC H, DELTA R ±0.2%

0542 0541 0540 0539 0538 0537 0536 0535 0534 0533 0532 0531 0530 0529 0528 0527 0526 0525 0524 0522 0521 0520 0518 0517 0516

LIFE TEST DATA - TANTALUM 250 mW, 70 ˚C, 1000 HOURS MIL-PRF-55342, CHARACTERISTIC H, DELTA R ±0.5%, FAILURE RATE P

0542 0541 0540 0539 0538 0537 0536 0535 0534 0533 0532 0531 0530 0529 0528 0527 0526 0525 0524 0523 0522 0521 0520 0517 0516

AVG. CHANGE IN %

Data is continuously updated, and referenced by date code, so that the most recent point is placed at the begining of the graph

CHIP RESISTORS In This Section... Thin Film Part Number Series ~ MSMR 1 Series ~ 0.012" x 0.009" MSTF 1 Series ~ 0.015" x 0.015" MSTF 2 Series ~ 0.020" x 0.020" MSTF 3 Series ~ 0.030" x 0.030" MSTF 35 Series ~ 0.035" x 0.035" MSTF 4 / MSTF 6 / MSDR 4 ~ High Megohm MSTF Series ~ Non-Microwave WATF Series ~ Surface Mount MSSR 3 Series ~ Laser Codable MSHR Series ~ Ultra High V alue Value MSPR 1 Series ~ High Power PTSM & PTWB Series ~ 5 W att Power TTerminators erminators Watt MSBC Series ~ Back Contact (2 Bond Pads) EMSBC Series ~ Back Contact (1 Bond Pad)

MSTF 1

0.015" Sq.

0.010"

Half-Wrap

Full Wrap Around

NEXT SECTION:

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 149-A-0306

MICROW AVE & RF CHIP RESISTORS MICROWA

THIN FILM CHIP RESISTOR MSMR1 SERIES

0.009"

0.012"

MECHANICAL DA TA DAT SIZE SUBSTRA TE SUBSTRATE RESISTOR BONDING P ADS PADS

0.012" x 0.009" x 0.006" (±0.001") (S)SILICON, (A)ALUMINA, (Q)QUARTZ, OR (G)GLASS NICHROME OR TTANT ANT ALUM NITRIDE ANTALUM 15,000 Å MINIMUM GOLD 10,000 Å MINIMUM: ALUMINUM OPTIONAL BARE SUBSTRA TE SUBSTRATE GOLD BACK OPTIONAL

BACKSIDE SURF ACE SURFACE

CHIP RESISTORS

0.006"

ELECTRICAL DA TA DAT Layout varies with value

RESIST ANCE RANGE RESISTANCE SILICON, QUARTZ, GLASS ALUMINA TOLERANCES

NICHROME 2 Ω TO 75K Ω∗ 75KΩ∗ 2 Ω TO 15K Ω 15KΩ 0.01% TO 10% (Value Dependent)

ALUM NITRIDE TANT ANTALUM Ω∗ 75KΩ∗ 2 Ω TO 75K 2 Ω TO 15K Ω 15KΩ 0.01% TO 10% (Value Dependent)

T.C.R.

±25ppm/°C ST ANDARD STANDARD OPTIONAL TO ±5ppm/°C (S, Q, G)

±150ppm/°C ST ANDARD STANDARD OPTIONAL TO ±10ppm/°C (S, Q, G) OPTIONAL TO ±25ppm/°C (A)

SERIES DA TA DAT 101 Ω TO 250K Ω: -40dB 101Ω 250KΩ ≤ 100 Ω, ≥ 250K Ω: -30dB 100Ω 250KΩ 400 V MIN.* 10 12Ω MIN. 100 V MAX. 50 mW (70°C DERA TED LINEARL Y TO 150°C) P = √ (E*R) DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°° C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: 0.1% MSI TYPICAL 03 % MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: 0. 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: 0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: 0. 0.11% MSI TYPICAL 1000 HRS., 70° C, 12 0.5% MAX. ∆R/R: 0.1% MSI TYPICAL 70°C, 1255mW mW,, ±±0.5% -5 -555°C TO +125°C

CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE TAGE OPERA TING VOL VOLT OPERATING POWER RA TING RATING SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE SILICON ALUMINA QUARTZ

2pF 0.06pF 0.02pF

PART NUMBER DESIGNA TION DESIGNATION MSMR1

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC V ALUE VALUE 5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

TOLERANCE S = 0.01%* Q = 0.05%* B = 0.1% D = 0.5% F = 1% G = 2% J = 5% K = 10%

OPTION TOR DESIGNATOR DESIGNA (If Required) A = ±50ppm/°C B = ±25ppm/°C C = ±10ppm/°C D = ±5ppm/°C E = Aluminum Bond Pads GB = Gold Backside F = ±100ppm/°C G = Gold Pads (always used when no other option is required)

A= G= Q= S=

Alumina Glass Quartz Silicon

N = Nichrome T = Tantalum Nitride

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 146-B-0306

EXAMPLE: MSMR 1SN-50R00F-BGB = 0.012" x 0.009", Silicon Substrate, Nichrome Resistor Ω, ±1% TTol., ol., ±25ppm/°C, Gold Backside. Resistor,, 50 50Ω *Consult Sales for available values

THIN FILM CHIP RESISTOR MSTF 1 SERIES

0.015" Sq.

MECHANICAL DA TA DAT CHIP RESISTORS

0.010"

SIZE SUBSTRA TE SUBSTRATE RESISTOR BONDING P ADS PADS

0.015" x 0.015" x 0.010" (±0.003") (S)SILICON, (A)ALUMINA, (Q)QUARTZ, OR (G)GLASS NICHROME OR TTANT ANT ALUM NITRIDE ANTALUM 15,000 Å MINIMUM GOLD 10,000 Å MINIMUM: ALUMINUM OPTIONAL BARE SUBSTRA TE SUBSTRATE GOLD BACK OPTIONAL

BACKSIDE SURF ACE SURFACE

ELECTRICAL DA TA DAT Layout varies with value

Minimum bonding area for < 100 Ω Resistance. 100Ω

RESIST ANCE RANGE RESISTANCE SILICON, QUARTZ, GLASS ALUMINA TOLERANCES

NICHROME 2 Ω TO 150K Ω∗ 150KΩ∗ 2 Ω TO 33K Ω 33KΩ 0.01% TO 10% (Value Dependent)

ALUM NITRIDE TANT ANTALUM Ω∗ 150KΩ∗ 2 Ω TO 150K 2 Ω TO 33K Ω 33KΩ 0.01% TO 10% (Value Dependent)

T.C.R.

±25ppm/°C ST ANDARD STANDARD OPTIONAL TO ±5ppm/°C (S, Q, G)

±150ppm/°C ST ANDARD STANDARD OPTIONAL TO ±10ppm/°C (S, Q, G) OPTIONAL TO ±25ppm/°C (A)

SERIES DA TA DAT 101 Ω TO TO 250K Ω: -40dB 101Ω 250KΩ ≤ 100 Ω, ≥ 250K Ω: -30dB 100Ω 250KΩ 400 V MIN.* 10 12Ω MIN. 100 V MAX. 50 mW (70°C DERA TED LINEARL Y TO 150°C) P = √ (E*R) DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°° C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: 0.1% MSI TYPICAL 03 % MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: 0. 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: 0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: 0. 0.11% MSI TYPICAL 1000 HRS., 70° C, 12 0.5% MAX. ∆R/R: 0.1% MSI TYPICAL 70°C, 1255mW mW,, ±±0.5% -5 -555°C TO +125°C

2pF 0.06pF 0.02pF

PART NUMBER DESIGNA TION DESIGNATION MSTF 1

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC V ALUE VALUE 5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

TOLERANCE S = 0.01%* Q = 0.05%* B = 0.1% D = 0.5% F = 1% G = 2% J = 5% K = 10%

A= G= Q= S=

Alumina Glass Quartz Silicon

N = Nichrome T = Tantalum Nitride

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 146-B-0306

EXAMPLE: MSTF 1SN-50R00F-BGB = 0.015" x 0.015", Silicon Substrate, Nichrome Resistor Ω, ±1% TTol., ol., ±25ppm/°C, Gold Backside. Resistor,, 50 50Ω *Consult Sales for available values

THIN FILM CHIP RESISTORS MSTF 2 SERIES MECHANICAL DA TA DAT SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE

CHIP RESISTORS

0.020"

0.020" x 0.020" (±0.003") x 0.010" (±0.003") (S)SILICON, (A)ALUMINA, (Q)QUARTZ, OR (G)GLASS NICHROME OR TTANT ANT ALUM NITRIDE ANTALUM 15,000 Å MINIMUM GOLD 10,000 Å MINIMUM ALUMINUM OPTIONAL BARE SUBSTRA TE SUBSTRATE GOLD BACK OPTIONAL

ELECTRICAL DA TA DAT

0.020"

Layout varies with value

RESIST ANCE RANGE RESISTANCE SILICON, QUARTZ, GLASS ALUMINA* ABSOLUTE TOLERANCE

NICHROME 2 Ω TO 1.5M Ω 1.5MΩ 2 Ω TO 250K Ω 250KΩ 0.1%, 0.5%, 1%, 2%, 5%, 10% TO 0.01% AVAILABLE

TANT ALUM NITRIDE ANTALUM 2 Ω TO 1.5M Ω 1.5MΩ 2 Ω TO 250K Ω 250KΩ 0.1%, 0.5%, 1%, 2%, 5%, 10% TO 0.01% AVAILABLE

T.C.R.

±25ppm/°C ST ANDARD STANDARD OPTIONAL TO ±5ppm/°C (S, Q, G)

±150ppm/°C ST ANDARD STANDARD OPTIONAL TO ±10ppm/°C (S, Q, G) OPTIONAL TO ±25ppm/°C (A)

SERIES DA TA DAT 101 Ω TO 250K Ω: -40dB 101Ω 250KΩ Ω: -30dB ≤ 100 Ω, ≥ 250K 250KΩ 100Ω 400V MIN. 1012Ω MIN. 100 V MAX.

CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE TING VOL TAGE OPERA OPERATING VOLT POWER RA TING RATING SILICON, ALUMINA QUARTZ, GLASS SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE SILICON ALUMINA QUARTZ

250mW (70°C DERA TED LINEARL Y TO 150°C) P = E 2/R DERATED LINEARLY 50mW (70°C DERA TED LINEARL Y TO 150°C) P = E 2/R DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°° C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 03 % MSI TYPICAL 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL C, 100% POWER 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 1000 HRS., 70° POWER,, ±±0.5% 70°C, -5 -555°C TO +150°C

2pF 0.06pF 0.02pF

PART NUMBER DESIGNA TION DESIGNATION MSTF 2

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC VALUE

TOLERANCE

N = Nichrome T = Tantalum Nitride

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

A G Q S

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 101-G-0306

= = = =

Alumina Glass Quartz Silicon

S X Q B D F G J K

= 0.01%* = 0.02%* = 0.05%* = 0.1% = 0.5% = 1% = 2% = 5% = 10%

EXAMPLE: MSTF 2SN-50R00F-GB = 0.020" x 0.020", Silicon Substrate, Nichrome Resistor Ω, ±1% TTol., ol., ±50ppm/°C, Gold Backside. Resistor,, 50 50Ω † Not Available on Alumina * Value dependent on Alumina. Consult Sales. **Always used when no other option is required.

X OPTION A B C D E F G GB

= ±50ppm/°C = ±25ppm/°C = ±10ppm/°C † = ±5ppm/°C † = Aluminum Bond Pads = ±100ppm/°C = Gold Bond Pads Std.** = Gold Backside

CENTER TAPPED CHIP RESISTORS MSTF 3 SERIES

*ID BAR

CHIP RESISTORS

MECHANICAL DA TA DAT

0.030"

0.030" x 0.030" (±0.003") x 0.010" (±0.003") (S)SILICON, (A)ALUMINA, (Q)QUARTZ, OR (G)GLASS NICHROME OR TTANT ANT ALUM NITRIDE ANTALUM 15,000 Å MINIMUM GOLD 10,000 Å MINIMUM ALUMINUM OPTIONAL BARE SUBSTRA TE SUBSTRATE GOLD BACK OPTIONAL

SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE

ELECTRICAL DA DAT TA RESIST ANCE RANGE / Per Side RESISTANCE SILICON, QUARTZ, GLASS ALUMINA* TOLERANCES

0.030" R1

R2 R1 = R2

Layout varies with value.

CENTER TTAP AP RA TIO RATIO T.C.R.

NICHROME 1Ω TO 1M Ω 1MΩ 1Ω TO 125K Ω 125KΩ 0.1%, 0.5%, 1%, 2%, 5%, 10% TO 0.01% AVAIL. (R1 & R2 trimmed to absolute tolerance Ω) <0.100Ω when total tolerance <0.100 ±1% ST ANDARD; A VAIL. TO 0.01% STANDARD; AV

TANT ALUM NITRIDE ANTALUM 1Ω TO 1M Ω 1MΩ Ω 1Ω TO 125K 125KΩ 0.1%, 0.5%, 1%, 2%, 5%, 10% TO 0.01% AVAIL. (R1 & R2 trimmed to absolute tolerance when total tolerance <0.100 Ω) <0.100Ω ±1% ST ANDARD; A VAIL. TO 0.01% STANDARD; AV

±25ppm/°C ST ANDARD STANDARD OPTIONAL TO ±5ppm/°C (S, Q, G)

±150ppm/°C ST ANDARD STANDARD OPTIONAL TO ±10ppm/°C (S, Q, G) OPTIONAL TO±25ppm/°C (A)

±2ppm/°C ST ANDARD*** STANDARD***

T.C. TRACKING

SERIES DA TA DAT 101 Ω TO 250K Ω: -40dB 101Ω 250KΩ ≤ 100 Ω, ≥ 250K Ω: -30dB 100Ω 250KΩ 400 V MIN. 1012Ω MIN. 100 V MAX.

CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL TAGE OPERATING VOLT POWER RA TING RATING SILICON, ALUMINA QUARTZ, GLASS SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE SILICON ALUMINA QUARTZ

250 mW (70°C DERA TED LINEARL Y TO 150°C) P = E 2/R DERATED LINEARLY 50 mW (70°C DERA TED LINEARL Y TO 150°C) P = E 2/R DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°° C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL % MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 03 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 1000 HRS., 70° POWER,, ±±0.5% 70°C, C, 100% POWER -5 -555°C TO +150°C

2pF 0.06pF 0.02pF

PART NUMBER DESIGNA TION DESIGNATION MSTF 3

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC VALUE

TOLERANCE

OPTION TOR DESIGNATOR DESIGNA

S = 0.01%* 5-Digit Number: X = 0.02%* 1st 4 Digits Are Q = 0.05%* Significant With B = 0.1% "R" As Decimal D = 0.5% Point When F = 1% Required. G = 2% 5th Digit J = 5% Represents K = 10% Number of Zeros. EXAMPLES: MSTF 3SN-50R00F-GB = 0.030" x 0.030", Silicon Substrate, Nichrome Resistor Ω, ±1% TTol., ol., ±50ppm/°C, Gold Backside. Resistor,, 50 50Ω A G Q S

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 102-G-0306

† * ** ***

= = = =

Alumina Glass Quartz Silicon

N = Nichrome T = Tantalum Nitride

Not Available on Alumina Value dependent on Alumina. Consult Sales. Always used when no other option is required. Consult Sales for TC TTracking racking to ±0.5ppm/°C. V alue Dependent Value

= ±50ppm/°C = ±25ppm/°C = ±10ppm/°C † = ±5ppm/°C † = Aluminum Bond Pads F = ±100ppm/°C G = Gold Bond Pads Std.** GB = Gold Backside RB = ±0.05% Ratio RC = ±0.1% Ratio RD = ±0.5% Ratio A B C D E

THIN FILM RESISTORS MSTF 35 WIRE BONDABLE MECHANICAL DA TA DAT SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BOND PAD SIZE BACKSIDE SURFACE

0.035" x 0.035" x 0.010" (±0.003") 99.6% ALUMINA, QUARTZ, GLASS (BeO OR AlN AVAILABLE) NICHROME, TTANT ANT ALUM NITRIDE, SICHROME ANTALUM 15,000 Å MINIMUM GOLD 0.009" x 0.025" TYPICAL; SUIT ABLE FOR MUL TIPLE TIE POINTS SUITABLE MULTIPLE BARE SUBSTRA TE; GOLD BACK OPTIONAL SUBSTRATE;

ELECTRICAL DA TA DAT 2Ω TO 150K VAILABLE 150KΩ STANDARD 10MΩ AV Ω ST ANDARD RANGE; TO 10M Ω IN SiCr A Ω ST ANDARD RANGE; TO 25M Ω IN SiCr A VAILABLE 2MΩ STANDARD 25MΩ AV 2Ω TO 2M 0.01%, 0.05%, 0.1%, 0.5%, 1%, 2%, 5%, 10% ±25ppm/°C ST ANDARD; ±5ppm/°C OPTIONAL * STANDARD; ±150ppm/°C ST ANDARD; ±50ppm/°C, ±25ppm/°C OPTIONAL STANDARD; ±300ppm/°C ST ANDARD; ±250ppm/°C, ±100ppm/°C OPTIONAL STANDARD;

CHIP RESISTORS

RESIST ANCE RANGE RESISTANCE ALUMINA QUARTZ, GLASS TOLERANCES T.C.R. NICHROME TANT ALUM NITRIDE ANTALUM SICHROME

SERIES DA TA DAT 101 Ω TO TO 250K Ω: -40dB 101Ω 250KΩ Ω: -30dB Ω, ≥ 250K 100Ω 250KΩ ≤ 100 400 V MIN. 1012Ω MIN. 100 V MAX.

CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL TAGE OPERATING VOLT POWER RA TING RATING ALUMINA QUARTZ / GLASS SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE ALUMINA QUARTZ

250 mW (70°C DERA TED LINEARL Y TO 150°C) P = E 2/R DERATED LINEARLY 50 mW (70°C DERA TED LINEARL Y TO 150°C) P = E 2/R DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°° C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 03 % MSI TYPICAL 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 1000 HRS., 70° POWER,, ±±0.5% 70°C, C, 100% POWER -5 -555°C TO +125°C

0.06pF 0.02pF

ARRA Y DA TA ARRAY DAT ISOLA TED OR COMMON BUSSED SERIES RESISTOR P AIR AND MUL TIPLE CONFIGURA TIONS ISOLATED PAIR MULTIPLE CONFIGURATIONS ±3ppm/°C MAX. ST ANDARD; ±1ppm/°C A VAILABLE STANDARD; AV ±1% ST ANDARD; TO ±0.01% A vailable STANDARD; Available ±0.1% MAX ∆R/R ST ANDARD; ±0.05% ∆R/R OPTIONAL STANDARD; TO 20 GHz; (RESISTOR GEOMETRY DEPENDENT)

TC TRACKING RA TIO MA TCHING RATIO MATCHING ST ABILITY RA TIO STABILITY RATIO FREQUENCY

PART NUMBER DESIGNA TION DESIGNATION MSTF 35

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC VALUE 5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

MSHR 35 A = Alumina (SiCr only) G = Glass Q = Quartz

N = Nichrome T = Tantalum Nitride S = Sichrome

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 106-F-0306

EXAMPLES: MSTF 35 A T-10001F-G = 10K Ω, ±1% ST ANDARD TT.C.R. .C.R. AT 10KΩ, STANDARD * Available on Glass or Quartz only ** Value Dependent, please consult Sales *** Not available on Alumina

X TOLERANCE S = 0.01% ** Q = 0.05% ** B = 0.1% ** D = 0.5% F = 1% G = 2% J = 5% K = 10%

A B C D E

= = = = =

GB = F= G=

OPTION DESIGNA TOR DESIGNATOR ±50ppm/°C ±25ppm/°C ±10ppm/°C*** ±5ppm/°C * Aluminum Bond Pads Gold Backside ±100ppm/°C Gold Bond Pads (always used when no other option is required)

MEGOHM CHIP RESISTORS

MSTF 4

MSTF 4 SERIES 0.040"

SIZE RESIST ANCE RANGE RESISTANCE

0.040" x 0.040" x .010" ±0.003" 1M Ω TO 15M Ω 1MΩ 15MΩ

CHIP RESISTORS

MSTF 6 SERIES 0.060" x 0.060" x .010" ±0.003" 2M Ω TO 35M Ω 2MΩ 35MΩ

SIZE RESIST ANCE RANGE RESISTANCE

0.040"

MSDR 4 SERIES SIZE RESIST ANCE RANGE RESISTANCE RESIST ANCE RA TIO RESISTANCE RATIO

MSTF 6

0.040" x 0.040" x .010" ±0.003" 1M Ω TO 10M Ω 1MΩ 10MΩ ±1% ST ANDARD; OPTIONAL TO ±0.1% STANDARD;

COMMON SERIES DA TA DAT

0.060"

MSDR 4

0.040"

SUBSTRA TE MA TERIAL SUBSTRATE MATERIAL BOND P ADS PADS BACKSIDE SURFACE TOLERANCES T.C.R. NICHROME TANT ALUM NITRIDE ANTALUM CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL TAGE OPERATING VOLT POWER RA TING RATING SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE SILICON QUARTZ

SILICON, QUARTZ, OR GLASS GOLD (15,000 Å MIN.), OPTIONAL: ALUMINUM (10,000 Å MIN.) BARE SUBSTRA TE OR GOLD BACK OPTIONAL SUBSTRATE 0.5%, 1%, 2%, 5%, 10%; TO ±0.1% AVAILABLE** ±25ppm/°C ST ANDARD; OPTIONAL TO ±5ppm/°C STANDARD; ±150ppm/°C ST ANDARD; OPTIONAL TO ±10ppm/°C STANDARD; -20dB 400 V MIN. 10 12Ω MIN. 100 V MAX. 250 mW (70°C DERA TED LINEARL Y TO 150°C) P = Ε2 / R DERATED LINEARLY 5X RA TED POWER, 25 0. 0.22 5% MAX. ∆R/R RATED 25°° C, 5 SEC., ±±0. 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R 1000 HRS., 70° C, 100% Power 0.5% MAX. ∆R/R 70°C, Power,, ±±0.5% -5 -555°C TO +150°C

2pF 0.02pF

PART NUMBER DESIGNA TION DESIGNATION

0.040"

R2 R1 = R2 R1 + R2 = Rt

Note: If R1 = R2, then custom design required.

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

TOT AL TOTAL OHMIC VALUE

MSTF4 MSTF6 MSDR4

G = Glass Q = Quartz S = Silicon

N = Nichrome T = Tantalum Nitride

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

X TOLERANCE ** B D F G J K

EXAMPLES: MSTF4SN-10003F-G = 0.040" x 0.040", Silicon Substrate, Nichrome Resistor ol., Gold Bond Pads. Resistor,, 1M 1MΩ Ω, ±1% TTol., MSTF6ST -10004F-FGB = 0.060" x 0.060", Silicon Substrate, MSTF6ST-10004F-FGB Tantalum Nitride Resistor Ω, ±1% TTol., ol., ±100ppm/°C Resistor,, 10M 10MΩ Gold Backside

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076

MSDR4SN-10004F-RCE = 0.040" x 0.040", Silicon Substrate, Nichrome Resistor Ω, ±1% TTol., ol., ±0.1% Ratio, Aluminum Resistor,, 10M 10MΩ Bond Pads. **Consult Sales department for tolerances <0.5%.

DCN TF 103-G-0306

= 0.1% = 0.5% = 1% = 2% = 5% = 10%

X OPTION DESIGNA TOR DESIGNATOR (If Required) A = ±50ppm/°C B = ±25ppm/°C C = ±10ppm/°C D = ±5ppm/°C E = Aluminum Bond Pads GB = Gold Backside F = ±100ppm/°C G = Gold Bond Pads (Always used when no other option is required) RC = ±0.1% Ratio* RD = ±0.5% Ratio* * MSDR-4 ONL Y ONLY

NON-MICROWAVE CHIP RESISTORS MSTF SERIES MECHANICAL DA TA DAT

Shown with optional Gold Back

x x x x x x x x x

W 0.010" 0.017" 0.050" 0.025" 0.017" 0.050" 0.100" 0.016" 0.085"

x x x x x x x x x

T 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010"

TOLERANCE (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003")

CHIP RESISTORS

L 0.020" 0.037" 0.050" 0.050" 0.021" 0.100" 0.100" 0.020" 0.150"

SERIES MSTF 21 MSTF 110 MSTF 112 MSTF 115 MSTF 118 MSTF 120 MSTF 121 MSTF 122 MSTF 124

ELECTRICAL DA TA DAT RESIST ANCE RANGE RESISTANCE ALUMINA SILICON 2 Ω − 150K Ω 150KΩ 2 Ω − 20K Ω 20KΩ 2 Ω − 1M Ω MΩ 2 Ω − 200K Ω 200KΩ 2 Ω − 1M Ω MΩ 2 Ω − 400K Ω 400KΩ 2 Ω − 1M Ω MΩ 2 Ω − 250K Ω 250KΩ 2 Ω − 500K Ω 500KΩ 2 Ω − 100K Ω 100KΩ 5 Ω − 2M Ω MΩ 5 Ω − 1M Ω MΩ Ω 1 00Ω Ω − 3M MΩ 1 0 Ω − 1.5M Ω 1.5MΩ Ω 2 Ω − 500K 500KΩ 2 Ω − 100K Ω 100KΩ Ω 1 00Ω Ω − 3M MΩ 1 0 Ω − 1.5M Ω 1.5MΩ

SERIES MSTF 21 MSTF 110 MSTF 112 MSTF 115 MSTF 118 MSTF 120 MSTF 121 MSTF 122 MSTF 124 ABSOLUTE TOLERANCE T.C.R.

POWER RA TING RATING @ 70°C 50mW 125mW 125mW 125mW 125mW 125mW 500mW 125mW 500mW

0.01%, 0.02%, 0.05%, 0.1%, 0.5%, 1%, 2%, 5%, 10% ±25ppm/°C ST ANDARD (NiCr); ±150ppm/ ANDARD (T aN) STANDARD ±150ppm/°°C ST STANDARD (TaN) CONSUL T SALES FOR OTHER V ALUES / TOLERANCES CONSULT VALUES

SERIES DA TA DAT SUBSTRA TE MA TERIAL SUBSTRATE MATERIAL CURRENT NOISE OPERA TING VOL TAGE OPERATING VOLT SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STORAGE TEMP STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE SILICON ALUMINA QUARTZ

99.6% ALUMINA ST ANDARD, QUARTZ** OPTIONAL, SILICON STANDARD, -20dB TYPICAL 100 V MAX. 5X RA TED POWER, 25 0. RATED 25°° C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL 03 % MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 1000 HRS., 70° C, 100% POWER 70°C, POWER,, ±±0.5% -5 -555°C TO +150°C +150°C

2pF 0.06pF 0.02pF

PART NUMBER DESIGNA TION DESIGNATION MSTF

21 110, 112 115, 118 120, 121 122, 124

XXXXX

SUBSTRA TE / SUBSTRATE RESISTIVE FILM AT = Alumina / TTaN aN AN = Alumina / NiCr QT = Quartz / TTaN aN QN = Quartz / NiCr PT = Polished / TTaN aN PN = Polished / NiCr SN = Silicon / NiCr ST = Silicon / TTaN aN

OHMIC VALUE

TOLERANCE

OPTION

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 141-C-0306

EXAMPLE: MSTF 110AN-10001F-GB =

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

S X Q B D F G J K

= 0.01% = 0.02% = 0.05% = 0.1% = 0.5% = 1% = 2% = 5% = 10%

= ±10ppm/°C = ±5ppm/°C = ±100ppm/°C = Gold Bond Pads Std.* GB = Gold Backside T = With Solder Bumps T3 = Lead-free Solder Bumps

110 Series, Alumina Substrate, 10K Ω, ±1% TTol., ol., 10KΩ ±25ppm/°C, Nichrome, Gold Backside.

* Always used when no other option is required. ** Consult Sales for power capabilities on Quartz substrate

C D F G

THIN FILM SURF ACE MOUNT RESISTORS SURFACE W ATF SERIES MECHANICAL DA TA DAT

CHIP RESISTORS

Full Wrap Around

SERIES WATF WATF WATF WATF WATF WATF WATF WATF WATF WATF

L 0.040" 0.035" 0.075" 0.050" 0.126" 0.100" 0.020" 0.055" 0.153" 0.020"

- 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 21

W 0.020" 0.035" 0.050" 0.050" 0.063" 0.050" 0.020" 0.025" 0.050" 0.010"

x x x x x x x x x x

T 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010"

TOLERANCE (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003")

99.6% ALUMINA, ALUMINUM NITRIDE NICHROME OR TTANT ANT ALUM NITRIDE ANTALUM

SUBSTRA TE SUBSTRATE RESISTOR BOND P ADS & WRAP AROUND PADS WRAPAROUND TERMINA TIONS TERMINATIONS

x x x x x x x x x x

GOLD WITH NICKEL BARRIER ST ANDARD. STANDARD. OPTIONAL WITH SOLDER; OR HALF-WRAP TERMINA TION TERMINATION

ELECTRICAL DA TA DAT POWER RA RATING TING @ 70°C OHMIC VALUE 125mW 2 Ω − 18K Ω 18KΩ 250mW 2 Ω − 150K Ω 150KΩ 250mW 2 Ω − 400K Ω 400KΩ 250mW 2 Ω − 400K Ω 400KΩ 500mW 2 Ω − 700K Ω 700KΩ 250mW 2 Ω − 625K Ω 625KΩ 125mW 2 Ω − 51K Ω 51KΩ 250mW 2 Ω − 100K Ω 100KΩ 500mW 2 Ω − 1M Ω MΩ 50mW 2 Ω − 20K Ω 20KΩ 0.1%, 0.5%, 1%, 2%, 5%, 10% ANDARD (NiCr); ±150ppm/ ANDARD (T aN) ±25ppm/°C ST ±150ppm/°°C ST STANDARD (TaN) STANDARD OPTIONAL TO ±25ppm/°C

Half-Wrap

SERIES WATF WATF WATF WATF WATF WATF WATF WATF WATF WATF

- 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 21

ABSOLUTE TOLERANCE T.C.R.

SERIES DA TA DAT 101 Ω TO 250K Ω: -40dB 101Ω 250KΩ ≤ 100 Ω, ≥ 250K Ω: -30dB 100Ω 250KΩ 400 V MIN. 10 12Ω MIN. 100 V MAX. 5X RA TED POWER, 25 0. RATED 25°°C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL 03 % MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55 % MAX. ∆R/R: ±0. 0.11 % MSI TYPICAL 1000 HRS., 70° C, 100% POWER 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 70°C, POWER,, ±±0.5% -5 -555°C TO +150°C DC THROUGH 20 GHz

CURRENT NOISE DIELECTRIC BREAKDOWN ANCE INSULA TION RESIST RESISTANCE INSULATION OPERA TING VOL TAGE OPERATING VOLT SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING FREQUENCY STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE

0.06pF

PART NUMBER DESIGNA TION DESIGNATION

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 111-F-0306

WATF

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM N = Nichrome T = Tantalum Nitride

OHMIC VALUE

TOLERANCE

OPTION

A = Alumina 5-Digit Number: 1, 2 N = Aluminum 1st 4 Digits Are 3, 4 Nitride Significant With 5, 6 "R" As Decimal 7, 8 Point When 9, 21 Required. Consult Sales for power capabilities 5th Digit on Aluminum Nitride. Represents * Value Dependent Number of Zeros. ** For Conductive Epoxy Mount. *** For Solder Mount. **** Consult Sales for Availability. (Solder option applies to all Conductor Surfaces)

B D F G J K

= 0.1%* = 0.5%* = 1% = 2% = 5% = 10%

A = ±50ppm/°C B = ±25ppm/°C HWU = Half-Wrap Untinned *** T = With SN62 Solder *** T3 = Leadfree Solder **** TR = Tape and Reel U = Untinned** HWT = Half-Wrap Tinned. HWT3 = Half-Wrap Leadfree TTinned inned

EXAMPLE: WATF 1AN-50R00F-T = 0.040" x 0.020" x 0.010", Alumina Substrate, Nichrome Resistor Ω, ±1% TTol., ol., ±25ppm/°C, w/ Solder rap Around. Resistor,, 50 50Ω Solder.. Full W Wrap

MSSR SERIES MSSR-3

MSSR-3 ID BAR

SIZE RESIST ANCE RANGE RESISTANCE

0.030" x 0.030" x 0.010" (±0.003") 2Ω TO 3M Ω 3MΩ

NUMERIC LASER CODE. CONSUL T SALES FOR DET AILS CONSULT DETAILS

COMMON SERIES DA TA DAT 0.030"

0.030"

SUBSTRA TE MA TERIAL SUBSTRATE MATERIAL BOND PADS BACKSIDE SURFACE TOLERANCES T.C.R. NICHROME TANT ALUM NITRIDE ANTALUM CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL TAGE OPERATING VOLT POWER RA TING RATING SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STRAY DISTRIBUTED CAP ACIT ANCE CAPACIT ACITANCE SILICON

SILICON GOLD (15,000 Å MIN.), OPTIONAL: ALUMINUM (10,000 Å MIN.) BARE OR GOLD BACK OPTIONAL 0.01%, 0.05%, 0.1%, 0.5%, 1%, 2%, 5%, 10%, 20% ±25ppm/°C ST ANDARD; OPTIONAL TO ±5ppm/°C STANDARD; ±150ppm/°C ST ANDARD; OPTIONAL TO ±10ppm/°C STANDARD; -20dB 400 V MIN. 1012Ω MIN. 100 V MAX. 250 mW (70°C DERA TED LINEARL Y TO 150°C) P = Ε2 / R DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°° C, 5 SEC., ±±0. 0.225% MAX. ∆R/R 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R 1000 HRS., 70° C, 12 0.5% MAX. ∆R/R 70°C, 1255mW mW,, ±±0.5% -5 -555°C TO +150°C

2pF

PART NUMBER DESIGNA TION DESIGNATION MSSR 3

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC VALUE

TOLERANCE

S = Silicon

N = Nichrome T = Tantalum Nitride

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

S = 0.01% Q = 0.05% B = 0.1% D = 0.5% F = 1% G = 2% J = 5% K = 10% M = 20%

OPTION TOR DESIGNATOR DESIGNA (If Required) = ±50ppm/°C = ±25ppm/°C = ±10ppm/°C = ±5ppm/°C = Aluminum Bond Pads = Gold Backside = ±100ppm/°C = Gold Bond Pads (Always used when no other option is required)

EXAMPLES: MSSR 3SN-50R00F-GB = 0.020" x 0.020", Silicon Substrate, Nichrome Resistor Ω, ±1% TTol., ol., Gold Backside. Resistor,, 50 50Ω

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 130-C-0306

A B C D E GB F G

HIGH VALUE CHIP RESISTORS SICHROME MSHR SERIES MSHR-2 0.020" x 0.020" x 0.010" (±0.003") Ω 1.2M Ω TO 15M 15MΩ 1.2MΩ

SIZE RESIST ANCE RANGE RESISTANCE

MSHR-3

0.020"

SIZE RESIST ANCE RANGE RESISTANCE

0.030" x 0.030" x 0.010" (±0.003") 2M Ω TO 25M Ω 2MΩ 25MΩ

MSHR-4 SIZE RESIST ANCE RANGE RESISTANCE

0.020"

0.040" x 0.040" x 0.010" (±0.003") 10M Ω TO 150M Ω 10MΩ 150MΩ

COMMON SERIES DA TA DAT

0.030"

R1 = R2 R1 + R2 = Rt

SUBSTRA TE TYPE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE TOLERANCES T.C.R. CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL TAGE OPERATING VOLT POWER RA TING RATING SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING

SILICON SICHROME ALUMINUM (10,000 Å MIN.), OPTIONAL: GOLD (15,000 Å MIN.) BARE SUBSTRA TE OR GOLD BACK OPTIONAL SUBSTRATE 1%, 2%, 5%, 10%, 20% ST ANDARD (±300ppm/°C), OPTIONAL (±100ppm/°C) STANDARD -20dB 400 V MIN. 1012Ω MIN. 100 V MAX. 250 mW (70°C DERA TED LINEARL Y TO 150°C) P = Ε2 / R DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°° C, 5 SEC., ±±0. 0.225% MAX. ∆R/R 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R 1000 HRS., 70° C, 100% Power 0.5% MAX. ∆R/R 70°C, Power,, ±±0.5% -5 -555°C TO +150°C

PART NUMBER DESIGNA TION DESIGNATION

0.040"

MSHR X

XXXXX

SERIES

SUBSTRA TE/ SUBSTRATE/ RESISTOR

OHMIC VALUE

TOLERANCE

2 3 4

SS = Silicon/ Sichrome

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

F G J K M

= 1% = 2% = 5% = 10% = 20%

X OPTION TOR DESIGNATOR DESIGNA (If Required) GB = Gold Backside F = ±100ppm/°C G = Gold Bond Pads E = Aluminum Bond Pads (Always used when no other option is required)

0.040"

EXAMPLES: MSHR2SS -15003F-E = 0.020" x 0.020", Silicon Substrate Sichrome Resistor Ω, ±1% TTol., ol., Aluminum Bond Pads. Resistor,, 1.5 M MΩ MSHR3SS-20005F-RCE = 0.030" x 0.030", Silicon Substrate, Sichrome Resistor Ω, ±1% TTol., ol., ±0.1% Ratio, Aluminum Bond Resistor,, 20M 20MΩ Pads.

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 104-G-0306

**Consult Sales department for tolerances <0.5%.

THIN FILM POWER RESISTORS MSPR 1 SERIES; 500mW ATT POWER RA TING 500mWA RATING MECHANICAL DA TA DAT SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS

0.045" x 0.030" x 0.010" (±0.003") SILICON NICHROME or TTANT ANT ALUM NITRIDE ANTALUM 15,000 Å MINIMUM GOLD 10,000 Å MINIMUM ALUMINUM 0.005" x 0.026" TYPICAL; SUIT ABLE FOR MUL TIPLE TIE POINTS SUITABLE MULTIPLE BARE SUBSTRA TE; GOLD BACK OPTIONAL SUBSTRATE;

BOND PAD SIZE BACKSIDE SURFACE

ELECTRICAL DA TA DAT 2Ω TO 250K Ω ST ANDARD RANGE 250KΩ STANDARD 0.1%, 0.5%, 1%, 2%, 5%, 10% ±150ppm/°C ST ANDARD STANDARD OPTIONAL TO ±25ppm/°C - TTaN aN OPTIONAL TO ±5ppm/°C - NiCr

RESIST ANCE RANGE RESISTANCE TOLERANCES T.C.R.

101 Ω TO TO 50K Ω: -40dB 101Ω 50KΩ ≤ 100 Ω: -30dB 100Ω 400 V MIN. 1012Ω MIN. 100 V MAX. 500 mW (70°C DERA TED LINEARL Y TO 150°C) P = E 2/R DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°° C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 03 % MSI TYPICAL 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL 1000 HRS., 70° C, 100% power , ±±0.5% 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 70°C, -5 -555°C TO +125°C

CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE TING VOL TAGE OPERA OPERATING VOLT POWER RA TING RATING SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STRAY DISTRIBUTED CAP ACIT ANCE CAPACIT ACITANCE

CHIP RESISTORS

SERIES DA TA DAT

2pF

PART NUMBER DESIGNA TION DESIGNATION MSPR 1

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

S = Silicon A = Alumina

N = Nichrome Tantalum T = Nitride

OHMIC VALUE 5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

TOLERANCE B = 0.1% D = 0.5% F = 1% G = 2% J = 5% K = 10%

EXAMPLES: MSPR1 ST -10001F-E = 10K Ω, ±1%, Aluminum Pads Standard TT.C.R. .C.R. ST-10001F-E 10KΩ,

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 128-E-0306

A B C D E F GB G

OPTION TOR DESIGNATOR DESIGNA = ±50ppm/°C = ±25ppm/°C = ±10ppm/°C = ±5ppm/°C = Aluminum Bond Pads = ±100ppm/°C = Gold Backside Gold Pads = (always used when no other option is required)

RESISTIVE POWER TERMINATORS PTSM, PTWB SERIES PTWB

The PTSM and PTWB series of Thin Film high power resistor terminators provide operating power to 2 Watts. This is accomplished with Mini-Systems proprietary high current density TTantalum antalum Nitride resistor film. Offered in top contact, surface mountable half wrap, and full wrap terminations.

CHIP RESISTORS

PTWB SERIES WIRE BONDABLE

With optional Gold Back

SERIES PTWB PTWB PTWB PTWB PTWB PTWB

L 0.037" 0.050" 0.050" 0.100" 0.100" 0.020"

110 112 115 120 121 122

x x x x x x

W 0.017" 0.050" 0.025" 0.050" 0.100" 0.016"

TOLERANCE ±0.003" ±0.003" ±0.003" ±0.003" ±0.003" ±0.003"

OHMIC 2Ω 2Ω 2Ω 2Ω 2Ω 2Ω -

VALUE 1K Ω 1KΩ 1K Ω 1KΩ 1K Ω 1KΩ 1K Ω 1KΩ 1K Ω 1KΩ 1K Ω 1KΩ

POWER RA TING RATING @ 70°C; ALUMINA 500mW 1W 500mW 2W 2W 250mW

OHMIC 2Ω 2Ω 2Ω 2Ω 2Ω 2Ω 2Ω -

VALUE 1K Ω 1KΩ 1K Ω 1KΩ 1K Ω 1KΩ 1K Ω 1KΩ 1K Ω 1KΩ 1K Ω 1KΩ 1K Ω 1KΩ

POWER RA TING RATING @ 70°C; ALUMINA 500mW 1W 1W 1W 2W 2W 250mW

PTSM SERIES SURF ACE MOUNT SURFACE

PTSM

L 0.040" 0.035" 0.075" 0.050" 0.126" 0.100" 0.020"

SERIES PTSM 1 PTSM 2 PTSM 3 PTSM 4 PTSM 5 PTSM 6 PTSM 7

Half-Wrap

PTSM W

Wrap Around

x x x x x x x

W 0.020" 0.035" 0.050" 0.050" 0.063" 0.050" 0.020"

TOLERANCE ±0.003" ±0.003" ±0.003" ±0.003" ±0.003" ±0.003" ±0.003"

COMMON SERIES DA TA DAT SUBSTRA TE MA TERIAL SUBSTRATE MATERIAL TOLERANCES T.C.R. CURRENT NOISE TAGE OPERA TING VOL VOLT OPERATING SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING FREQUENCY STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE ALUMINA

99.6% ALUMINA STD.; BeO OPTIONAL FOR HIGHER POWER 1%, 2%, 5%, 10% ±150ppm (T aN) (TaN) -20dB TYPICAL 100 V MAX. 0. 2. 5X RA TED POWER, 25 0.225% MAX. ∆R/R: 0.1% MSI TYPICAL 2.5X RATED 25°°C, 5 SEC., ±±0. 03 % MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: 0. 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: 0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55 % MAX. ∆R/R: 0. 0.11% MSI TYPICAL 0.5% MAX. ∆R/R: 0.1% MSI TYPICAL 1000 HRS., 70° C, 12 70°C, 1255mW mW,, ±±0.5% -5 -555°C TO +150°C DC THRU 20 GHz

0.06pF

PART NUMBER DESIGNA TION DESIGNATION

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 131-D-0306

XXXX

XXXXX

SERIES

STYLE

MA TERIAL MATERIAL

OHMIC VALUE

TOLERANCE

PTWB

110, 112 115, 120 121, 122

AT = Alumina / TTaN aN BT = BeO / TTaN aN

PTSM

1,2 3,4 5,6 7

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

OPTION TOR DESIGNATOR DESIGNA (If Required) ***G = Gold Bond Pads. **GB = Gold Back inned **T = Solder TTinned ** T3 = Leadfree Solder TTinned inned *HWU= Half-Wrap No Solder *WAU= Wrap Around No Solder *HWT= Half-Wrap Solder TTinned inned *HWT3= Half-Wrap Leadfree Solder TTinned inned *W AT= Wrap Around *WA Solder TTinned inned *W AT3= Wrap Around *WA Leadfree Solder TTinned inned

F= G= J = K=

1% 2% 5% 10%

EXAMPLES: PTWB 110A T-100R0F-GB = 100 Ω, ±1% TTol., ol., Gold Back, Wire Bondable. 110AT 100Ω inned. PTSM 1A T-2R000K-HWT = 22Ω Ω, ±10% TTol., ol., Half-W rap, Solder TTinned. 1AT Half-Wrap, * PTSM Style only. ** PTWB Style only. *** TTo o be used when no other option is required. PTWB only only.. Solder option applies to all conductor surfaces

THIN FILM BACK CONTACT RESISTORS MSBC SERIES The MSBC series back contact chip resistor offers a space-saving design in a 0.020" x 0.020" size that requires only one wire bond. The chip backside provides the other contact with eutectic or conductive epoxy attachment to the substrate. Wire bonding is made to the notched pad on top of the chip; the rectangular pad is a contact via to the backside connection. MSBC's offer the high stability .C.R. of thin film while providing stability,, low noise, and low TT.C.R. greater flexibility in hybrid designs.

MECHANICAL DA TA DAT 0.020" x 0.020" x 0.010" (±0.003") SILICON TANT ALUM NITRIDE ANTALUM 15,000 Å ALUMINUM TYPICAL AD INDICA TES WIRE BOND LOCA TION) (NOTCHED BOND P PAD INDICATES LOCATION) GOLD ST ANDARD; Suitable for eutectic or conductive epoxy STANDARD; bonding

SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE

ELECTRICAL DA TA DAT 5 Ω TO 1.2M Ω 1.2MΩ 0.05%, 0.1%, 0.25%, 0.5% 1%, 2%, 5%, 10% (RESISTOR VALUE DEPENDENT) ±150ppm ST ANDARD; ±100ppm A vailable 10 Ω − 200K Ω STANDARD; Available 10Ω 200KΩ

RESIST ANCE RANGE RESISTANCE TOLERANCES T.C.R.

Layout varies with value.

-35dB MAX. 100 Ω TO 250K Ω TYPICAL 100Ω 250KΩ Ω -20dB MAX. < 100 Ω OR > 250K 100Ω 250KΩ 400 V MIN. 1012Ω MIN. 100 V MAX. 250 mW TOT AL (70°C DERA TED LINEARL Y TO 150°C) P = E 2/R TOTAL DERATED LINEARLY 5X RA TED POWER, 25 0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL RATED 25°° C, 5 SEC., ±±0. 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 03 % MSI TYPICAL 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL 1000 HRS., 70° 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 70°C, power,, ±±0.5% C, 100% power -5 -555°C TO +125°C

CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL TAGE OPERATING VOLT POWER RA TING RATING SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE SILICON

CHIP RESISTORS

SERIES DA TA DAT

2 pF

PART NUMBER DESIGNA TION DESIGNATION MSBC 2

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC VALUE

TOLERANCE

OPTION

S = Silicon

T = Tantalum Nitride

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When required. 5th Digit Represents Number of Zeros.

-10001F-E = 10K Ω, ±1% ST ANDARD TT.C.R. .C.R. 2ST-10001F-E 10KΩ, STANDARD EXAMPLES: MSBC 2ST ** Consult Sales for available values

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 105-F-0306

Q = 0.05% ** B = 0.10% ** C = 0.25% D = 0.5% F = 1% G = 2% J = 5% K = 10%

E = Aluminum Bond Pads Std. F = ±100ppm/°C

THIN FILM EMSBC SERIES EMSBC SERIES CHIP RESISTORS

The EMSBC series back contact chip resistor offers a space-saving design in a 0.020" x 0.020" size that requires only one wire bond. The chip backside provides the other contact with eutectic or conductive epoxy attachment to the substrate. Wire bonding is made to the notched pad on top of the chip. EMSBC's offer the high stability .C.R. of thin film while providing greater flexibility in hybrid stability,, low noise, and low TT.C.R. designs. Excellent for use in Vision Recognition Systems.

MECHANICAL DA TA DAT SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE

0.020" x 0.020" x 0.010" (±0.003") SILICON TANT ALUM NITRIDE ANTALUM 15,000 Å ALUMINUM TYPICAL (GOLD BOND P ADS OPTIONAL) PADS GOLD; Suitable for eutectic or conductive epoxy bonding

ELECTRICAL DA TA DAT RESIST ANCE RANGE RESISTANCE TOLERANCES T.C.R. Layout varies with value.

5 Ω TO 1.2M Ω 1.2MΩ 0.05%, 0.1%, 0.25%, 0.5% 1%, 2%, 5%, 10% (RESISTOR VALUE DEPENDENT) ±250ppm ST ANDARD; ±100ppm A vailable ≥ 500 Ω, ≤ 250K Ω STANDARD; Available 500Ω, 250KΩ

SERIES DA TA DAT CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL OPERATING VOLT TAGE POWER RA TING RATING SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE SILICON

Ω TO 250K Ω TYPICAL -35dB MAX. 100 250KΩ 100Ω Ω OR > 250K Ω 100Ω 250KΩ -20dB MAX. < 100 400 V MIN. 1012Ω MIN. 100 V MAX. 250 mW TOT AL (70°C DERA TED LINEARL Y TO 150°C) P = E 2/R TOTAL DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°°C, 5 SEC., ±±0. 0.22 5% MAX. ∆R/R: ±0.1% MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 03 % MSI TYPICAL 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55 % MAX. ∆R/R: ±0. 0.11 % MSI TYPICAL 1000 HRS., 70° C, 100% POWER 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 70°C, POWER,, ±±0.5% -5 -555°C TO +125°C

2pF

PART NUMBER DESIGNA TION DESIGNATION EMSBC 2

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC VALUE

TOLERANCE

OPTION

S = Silicon

T = Tantalum Nitride

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When required. 5th Digit Represents Number of Zeros.

.C.R. EXAMPLES: EMSBC 2ST -10001F-E = 10K Ω, ±1% ST 2ST-10001F-E 10KΩ, STANDARD ANDARD TT.C.R. Consult Sales for available values **

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 142-B-0306

Q B C D F G J K

= 0.05% ** = 0.10% ** = 0.25% = 0.5% = 1% = 2% = 5% = 10%

E = Aluminum Bond Pads Std. F = ±100ppm/°C G = Gold Bond Pads Optional

MICROWAVE & RF RESISTORS In This Section... Thin Film Part Number Series ~ MSMW Series ~ Microwave Chip Resistors WAMT Series ~ Microwave Chip TTerminations erminations

Half-Wrap

Full Wrap Around Shown with optional Gold Back

NEXT SECTION:

CHIP A TTENUA TORS ATTENUA TTENUATORS

PREVIOUS SECTION:

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 150-A-0306

CHIP RESISTORS

MICROWAVE CHIP RESISTORS MSMW SERIES All MSMW parts can be Wire-Bonded, Ribbon-Bonded and offered with Solder Bumps. Parts are manufactured using specialized Laser Trimming for Optimal Performance over Operating Frequency Range.

MECHANICAL DA TA DAT T

Shown with optional Gold Back

SERIES MSMW 21 MSMW 110 MSMW 112 MSMW 115 MSMW 118 MSMW 120 MSMW 121 MSMW 122 MSMW 124

L 0.020" 0.037" 0.050" 0.050" 0.021" 0.100" 0.100" 0.020" 0.150"

x x x x x x x x x

W 0.010" 0.017" 0.050" 0.025" 0.017" 0.050" 0.100" 0.016" 0.085"

x x x x x x x x x

TOLERANCE (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003")

T 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010" 0.010"

ELECTRICAL DA TA DAT POWER RA TING RATING @ 70°C 50mW 125mW 125mW 125mW 125mW 125mW 500mW 125mW 500mW

OHMIC VALUE

SERIES

MICROWAVE & RF RESISTORS

400Ω 2 Ω − 400 Ω Ω KΩ 2 Ω − 1K Ω KΩ 2 Ω − 3K Ω KΩ 2 Ω − 2K Ω 300Ω 2 Ω − 300 Ω KΩ 5 Ω − 5K Ω 1 0Ω − 5 K KΩ Ω 2 Ω − 360 360Ω Ω 1 0Ω − 5 K KΩ 1%, 2%, 5%, 10% ±25ppm/°C ST ANDARD (NiCr); ±150ppm/ ANDARD (T aN) STANDARD ±150ppm/°°C ST STANDARD (TaN)

MSMW 21 MSMW 110 MSMW 112 MSMW 115 MSMW 118 MSMW 120 MSMW 121 MSMW 122 MSMW 124 ABSOLUTE TOLERANCE T.C.R.

CONSULT SALES FOR OTHER VALUES / TOLERANCES

SERIES DA TA DAT 99.6% ALUMINA ST ANDARD, QUARTZ** OPTIONAL STANDARD, -20dB TYPICAL 100 V MAX. 5X RA TED POWER, 25 0. RATED 25°°C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL 03 % MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.11% MSI TYPICAL 0.55% MAX. ∆R/R: ±0. 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 1000 HRS., 70° C, 100% POWER 70°C, POWER,, ±±0.5% -5 -555°C TO +150°C +150°C

SUBSTRA TE MA TERIAL SUBSTRATE MATERIAL CURRENT NOISE OPERA TING VOL TAGE OPERATING VOLT SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK ANCE MOISTURE RESIST RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING STORAGE TEMP STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE ALUMINA QUARTZ

0.06pF 0.02pF

PART NUMBER DESIGNA TION DESIGNATION MSMW

21 110, 112 115, 118 120, 121 122, 124

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 109-G-0306

XXXXX

SUBSTRA TE / SUBSTRATE RESISTIVE FILM AT = Alumina / TTaN aN AN = Alumina / NiCr QT = Quartz / TTaN aN QN = Quartz / NiCr PT = Polished / TTaN aN PN = Polished / NiCr

OHMIC VALUE

TOLERANCE

OPTION

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

F G J K

= 1% = 2% = 5% = 10%

F = ±100ppm/°C G = Gold Bond Pads Std.* GB = Gold Backside T = With Solder Bumps T3 = With Leadfree Solder Bumps

EXAMPLE: MSMW 110AN-10000F-GB = 110 Series, Alumina Substrate, 1K Ω, ±1% TTol., ol., 1KΩ ±25ppm/°C, Nichrome, Gold Backside. * Always used when no other option is required. ** Consult Sales for power capabilities on Quartz substrate

MICROWA VE TERMINATIONS W AMT SERIES WAMT Series offers special resistor patterning to enhance RF performance. Half-Wrap or Full-Wrap Terminations offer maximum flexibility in microwave applications. These resistors are constructed using our proven proprietary thin film processes.

MECHANICAL DA TA DAT T

Full Wrap Around

MICROWAVE & RF RESISTORS

Half-Wrap

SERIES WAMT - 1 WAMT - 2 WAMT - 3 WAMT - 4 WAMT - 5 WAMT - 6 WAMT - 7 WAMT - 8 WAMT - 21 SUBSTRA TE SUBSTRATE RESISTOR BOND P ADS PADS AND WRAP AROUND WRAPAROUND TERMINA TIONS TERMINATIONS

L W T 0.040" x 0.020" x 0.010" 0.035" x 0.035" x 0.010" 0.075" x 0.050" x 0.010" 0.050" x 0.050" x 0.010" 0.126" x 0.063" x 0.010" 0.100" x 0.050" x 0.010" 0.020" x 0.020" x 0.010" 0.055" x 0.025" x 0.010" 0.020" x 0.010" x 0.010" 99.6% ALUMINA, ALUMINUM NITRIDE NICHROME OR TTANT ANT ALUM NITRIDE ANTALUM

TOLERANCE (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003") (±0.003")

GOLD WITH NICKEL BARRIER ST ANDARD. STANDARD. OPTIONAL WITH SOLDER; OR HALF-WRAP TERMINA TION TERMINATION

ELECTRICAL DA TA DAT SERIES WAMT - 1 WAMT - 2 WAMT - 3 WAMT - 4 WAMT - 5 WAMT - 6 WAMT - 7 WAMT - 8 WAMT - 21 ABSOLUTE TOLERANCE T.C.R.

OHMIC VALUE 6 Ω − 1K Ω KΩ 25 Ω − 1K Ω 25Ω KΩ 25 Ω − 1K Ω 25Ω KΩ 25 Ω − 1K Ω 25Ω KΩ 25 Ω − 1K Ω 25Ω KΩ 25 Ω − 1K Ω 25Ω KΩ 25 Ω − 1K Ω 25Ω KΩ 25 Ω − 1K Ω 25Ω KΩ 2 Ω − 400 Ω 400Ω

POWER RA TING @ 70°C RATING 125mW 250mW 250mW 250mW 500mW 250mW 125mW 250mW 50mW

1%, 2%, 5%, 10% ±25ppm/°C ST ANDARD (NiCr) STANDARD ±150ppm/°C ST ANDARD (T aN); TO ±50ppm/ VAILABLE STANDARD (TaN); ±50ppm/°°C A AV CONSUL T SALES FOR OTHER V ALUES CONSULT VALUES

SERIES DA TA DAT 101 Ω TO 250K Ω: -40dB; ≤ 100 100Ω 250KΩ 101Ω 250KΩ Ω, ≥ 250K Ω: -30dB 10 12Ω MIN. 100 V MAX. 5X RA TED POWER, 25 0. RATED 25°°C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL 03 % MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55 % MAX. ∆R/R: ±0. 0.11 % MSI TYPICAL 1000 HRS., 70° C, 100% POWER 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 70°C, POWER,, ±±0.5% -5 -555°C TO +150°C DC THROUGH 20 GHz

CURRENT NOISE INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL TAGE OPERATING VOLT SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING FREQUENCY STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE ALUMINA

0.06pF

PART NUMBER DESIGNA TION DESIGNATION X

SERIES

SUBSTRA TE SUBSTRATE

1, 2 3, 4 5, 6 7, 8 21

A = Alumina N = Aluminum Nitride

WAMTX

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 119-D-0306

XXXXX

RESISTIVE FILM

OHMIC VALUE

TOLERANCE

N = Nichrome T = Tantalum Nitride

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

Consult Sales for power capabilities on Aluminum Nitride. * For Conductive Epoxy Mount. ** For Solder Mount. *** Consult Sales for Availability.

F G J K

= 1% = 2% = 5% = 10%

EXAMPLE: WAMT1 A T-50R00F-T = 0.040" x 0.020" x 0.010", Alumina Substrate, AT 50 Ω, ±1% TTol., ol., ±150ppm/°C, w/ Solder rap Around. 50Ω Solder.. Full W Wrap Solder option applies to all Conductor Surfaces

X OPTION A = ±50ppm/°C F = ±100ppm/°C HWU = Half-Wrap Untinned T = With SN62 Solder ** T3 = Leadfree Solder TR = Tape and Reel *** U = Untinned* HWT = Half-Wrap Tinned. HWT3 = Half-Wrap Leadfree Tinned

CHIP ATTENUATORS In This Section... Thin Film Part Number Series ~ MSA T 1, 2, 3, 10 Series MSAT MSA T 5, 6, 7 Series ~ Power MSAT MSA T 21, 22, 23 Series ~ Power MSAT

MSAT-1

MSAT-23

MSAT-2 & MSAT-10

GROUND

INPUT

OUTPUT

INPUT

OUTPUT INPUT

OUTPUT

GROUND

GROUND GROUND

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 151-A-0306

NEXT SECTION:

CHIP CAP ACITORS CAPACITORS

PREVIOUS SECTION:

MICROW AVE & RF RESISTORS MICROWA

THIN FILM CHIP ATTENUATORS MSAT-1

MSA MSATT-1, MSA MSATT-2, MSA MSATT-3, MSA MSATT-10 SERIES The MSA T series Thin Film chip attenuators provide attenuation accuracy for frequencies through 20 MSAT GHz. They offer the low noise, low stray capacitance and tight tolerance of Thin Film in compact sizes that make them ideal for smaller microwave and stripline applications. GROUND

MSA T-1 TOP CONT ACT WITH GOLD BACK MSAT CONTACT

GROUND

SIZE SUBSTRA TE SUBSTRATE BOND PADS BACKSIDE SURFACE RESISTOR MA TERIAL MATERIAL T.C.R. ATTENUA TION RANGES TTENUATION ATTENUA TION ACCURACY TTENUATION FREQUENCY RANGE IMPEDANCE VSWR CURRENT NOISE TING POWER RA RATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE QUARTZ

INPUT

OUTPUT

MSAT-2 & MSAT-10

0.100" x 0.080" (±0.003") x 0.010" (±0.001") QUARTZ 25K Å MIN. GOLD, WIRE OR RIBBON BONDABLE GOLD TANT ALUM NITRIDE ANTALUM ±150ppm/°C -1dB THROUGH -24dB; ( 0.5 dB STEPS AVAILABLE ) ±0.2dB DC THROUGH 20 GHz 50 Ω 50Ω 1.5:1 MAX. -20dB TYPICAL 125mW (70°C DERA TED LINEARL Y TO 150°C); P = E2/R DERATED LINEARLY

0.02pF

MSA T-2 & MSA T-10 SERIES WITH WRAP AROUND GROUND MSAT MSAT WRAPAROUND

INPUT

OUTPUT

MSAT-3

0.050" x 0.050" (±0.003") 0.020" (±0.003") THICK 0.010" (±0.003") THICK 99.6% ALUMINA 25K Å MIN. GOLD, WRAPAROUND GROUND GOLD TANT ALUM NITRIDE ANTALUM ±150ppm/°C -1dB THROUGH -24dB; ( 0.5 dB STEPS AVAILABLE ) ±0.2dB DC THROUGH 20 GHz 50 Ω 50Ω 1.5:1 MAX. -20dB TYPICAL 250mW (70°C DERA TED LINEARL Y TO 150°C); P = E2/R DERATED LINEARLY

0.06pF

MSA T-3 SERIES FULL Y SURF ACE MOUNT ABLE MSAT FULLY SURFACE MOUNTABLE

INPUT

OUTPUT

GROUND

SIZE SUBSTRA TE SUBSTRATE BOND PADS BACKSIDE SURFACE RESISTOR MA TERIAL MATERIAL T.C.R. TION RANGES ATTENUA TTENUATION ATTENUA TION ACCURACY TTENUATION FREQUENCY RANGE IMPEDANCE VSWR CURRENT NOISE TING POWER RA RATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE ALUMINA

0.050" x 0.050" (±0.003") x 0.020" (±0.003") 99.6% ALUMINA 25 Å MIN. GOLD, FULL Y SURF ACE MOUNT ABLE FULLY SURFACE MOUNTABLE GOLD TANT ALUM NITRIDE ANTALUM ±150ppm/°C -1dB THROUGH -24dB; ( 0.5 dB STEPS AVAILABLE ) ±0.2dB DC THROUGH 20 GHz 50 Ω 50Ω 1.5:1 MAX. -20dB TYPICAL 250mW (70°C DERA TED LINEARL Y TO 150°C); P = E2/R LINEARLY DERATED

0.06pF

PART NUMBER DESIGNA TION DESIGNATION

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 110-F-0306

MSA T MSAT

SERIES

1, 2 3, 10

EXAMPLE: MSA T 2G-01dB (MSA T 2 Series: -1dB) MSAT (MSAT Consult Sales For Other Configurations And Impedances

CHIP ATTENUA TORS TTENUATORS

GROUND

SIZE MSA T-2 MSAT MSA T-10 MSAT SUBSTRA TE SUBSTRATE BOND PADS BACKSIDE SURFACE TERIAL RESISTOR MA MATERIAL T.C.R. ATTENUA TION RANGES TTENUATION TION ACCURACY ATTENUA TTENUATION FREQUENCY RANGE IMPEDANCE VSWR CURRENT NOISE POWER RA TING RATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE ALUMINA

POWER THIN FILM AATTENUA TTENUA TORS TTENUATORS MSAT-5

MSA MSATT-5, MSA MSATT-6, MSA MSATT-7 SERIES

TOP CONTACT W/ GOLD BACK

The MSA T series Thin Film Power chip attenuators provide attenuation accuracy for frequencies through MSAT 20 GHz. They offer the low noise, low stray capacitance and tight tolerance of Thin Film in compact sizes that make them ideal for smaller microwave and stripline applications at operating powers to 2 Watts.

MECHANICAL DA TA DAT SIZE SUBSTRA TE SUBSTRATE BOND PADS BACKSIDE SURFACE RESISTOR MA TERIAL MATERIAL INPUT

0.148" x 0.122" (±0.003") x 0.025" (±0.003") 99.6% ALUMINA 25K Å MIN. GOLD; WIRE OR RIBBON BONDABLE, OR SOLDERABLE. GOLD TANT ALUM NITRIDE ANTALUM

OUTPUT

ELECTRICAL DA TA DAT GROUND

MSAT-6 TOP CONTACT W/ WRAPAROUND GROUND

ATTENUA TION RANGE TTENUATION ATTENUA TION ACCURACY TTENUATION FREQUENCY RANGE IMPEDANCE VSWR

-1dB THROUGH -24dB; ( 0.5dB STEPS AVAILABLE ) ±0.2dB DC THROUGH 20 GHz 50 Ω 50Ω 1.5:1 MAX.

CHIP TORS ATTENUA TTENUATORS

COMMON SERIES DA TA DAT

INPUT

OUTPUT

CURRENT NOISE POWER RA TING RATING T.C.R. HIGH TEMP EXPOSURE THERMAL SHOCK ST ABILITY STABILITY TING TEMP RANGE OPERA OPERATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE ALUMINA

-20dB TYPICAL 2W ATTS, (70°C DERA TED LINEARL Y TO 150°C) P = E 2/R WA DERATED LINEARLY ±150ppm/°C 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 03 % MSI TYPICAL 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 1000 HRS., 70° C, 100% POWER POWER,, ±±0.5% 70°C, -5 -555°C TO +150°C

0.06pF

PART NUMBER DESIGNA TION DESIGNATION GROUND

MSA T MSAT

FULLY SURFACE MOUNTABLE

SERIES

5 6 7

MSAT-7

EXAMPLE: MSA T 7G-03dB (MSA T 7 Series: -3dB) MSAT (MSAT

INPUT

OUTPUT

GROUND

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 124-D-0306

POWER THIN FILM AATTENUA TTENUA TORS TTENUATORS MSAT-21 TOP CONTACT W/ GOLD BACK

MSA MSATT-21, MSA MSATT-22, MSA MSATT-23 SERIES The MSA T series Thin Film Power chip attenuators provide attenuation accuracy for frequencies through MSAT 20 GHz. They offer the low noise, stray capacitance and tight tolerance of Thin Film in compact sizes that make them ideal for smaller microwave and stripline applications at operating powers to 250mW 250mW..

MECHANICAL DA TA DAT SIZE

INPUT

OUTPUT

0.077" x 0.061" (±0.003") 0.015" (±0.003") THICK 99.6% ALUMINA 25K Å MIN. GOLD; WIRE OR RIBBON BONDABLE, OR SOLDERABLE. GOLD TANT ALUM NITRIDE ANTALUM

SUBSTRA TE SUBSTRATE BOND P ADS PADS BACKSIDE SURFACE RESISTOR MA TERIAL MATERIAL

ELECTRICAL DA TA DAT GROUND

MSAT-22 TOP CONTACT W/ WRAPAROUND GROUND

ATTENUA TION RANGE TTENUATION ATTENUA TION ACCURACY TTENUATION FREQUENCY RANGE IMPEDANCE VSWR

-1dB THROUGH -24dB; ( 0.5dB STEPS AVAILABLE ) ±0.2dB DC THROUGH 20 GHz 50 Ω 50Ω 1.5:1 MAX.

COMMON SERIES DA TA DAT

OUTPUT

GROUND

-20dB TYPICAL 250mW TED LINEARL Y TO 150°C) P = E 2/R 250mW,, (70°C DERA DERATED LINEARLY ±150ppm/°C 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 03 % MSI TYPICAL 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 1000 HRS., 70° C, 100% POWER POWER,, ±±0.5% 70°C, -5 -555°C TO +150°C

CHIP ATTENUA TORS TTENUATORS

INPUT

CURRENT NOISE POWER RA TING RATING T.C.R. HIGH TEMP EXPOSURE THERMAL SHOCK ST ABILITY STABILITY TING TEMP RANGE OPERA OPERATING STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE ALUMINA

0.06pF

PART NUMBER DESIGNA TION DESIGNATION

MSAT-23

MSA T MSAT

SERIES

21 22 23

FULLY SURFACE MOUNTABLE

EXAMPLE: MSA T 23G-03dB (MSA T 23 Series: -3dB) MSAT (MSAT

INPUT

OUTPUT

GROUND

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 144-B-0306

CHIP CAPACITORS In This Section... Thin Film Part Number Series ~ MSCC Series ~ MOS Chip Capacitors MSBIN Series ~ Binary Chip Capacitors

MSBIN-1, MSBIN-2 MSCC 5 A

MSCC 2 - MSCC 4

1pF

NEXT SECTION:

THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 152-A-0306

C 2pF

NETWORKS & ARRA YS ARRAYS

PREVIOUS SECTION:

MINI-SYSTEMS, INC.

CHIP A TTENUA TORS ATTENUA TTENUATORS

D 4pF

8pF

MOSSTYLECHIPCAPACITORS MSCC 2 - MSCC 4

MSCC SERIES MSCC-2 L

SIZE CAP ACIT ANCE V ALUES (pF) CAPACIT ACITANCE VALUES

W TOLERANCES

MSCC 5

0.020" x 0.020" (±0.003") x 0.010" (±0.001") 4.7 5.6 6.8 8.2 12 13 15 16 22 24 27 30 39 43 47 51 pF 4.7 - 10 11 - 20 21 - 51

10 18 33

11 20 36

TOLERANCE(S) ±0.5pF 5%, 10%, 20% 2.5%, 5%, 10%, 20%

MSCC-3 SIZE CAP ACIT ANCE V ALUES (pF) CAPACIT ACITANCE VALUES

pF 33 - 100

TOLERANCES

WORKING VOLTAGE (V) WORKING VOLTAGE (V)

WORKING VOLTAGE (V)

TOLERANCES

TOLERANCE(S) 2.5%, 5%, 10%, 20%

0.040" x 0.040" (±0.003") x 0.010" (±0.001") 56 62 68 75 100 110 120 130 180 200 220 pF 56 - 220

82 150

91 160

TOLERANCE(S) 2.5%, 5%, 10%, 20%

MSCC-5 6.8

12 15 18 22 27 CAPACITANCE (pF)

SIZE CAP ACIT ANCE V ALUES (pF) CAPACIT ACITANCE VALUES

MSCC 3 WORKING VOLTAGE vs CAPACITANCE

250 225 200 175 150 125 100 75 50 25 0 56

TOLERANCES

0.055" x 0.055" (±0.003") x 0.010" (±0.001") 150 160 180 200 270 300 330 360 470 510 560 620 820 910 1000 pF 150 - 1000

220 390 680

240 430 750

TOLERANCE(S) 2.5%, 5%, 10%, 20%

COMMON SERIES DA TA DAT 33

47 51 56 62 68 CAPACITANCE (pF)

91 100

MSCC 4 WORKING VOLTAGE vs CAPACITANCE

82 100 120 CAPACITANCE (pF)

150

180

220

MSCC 5 WORKING VOLTAGE vs CAPACITANCE 250 225 200 175 150 125 100 75 50 25 0 150 180 220 270 330 390 470 560 680 820 1000 CAPACITANCE (pF)

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 114-F-0306

SUBSTRA TE SUBSTRATE DIELECTRIC BOND P AD PAD BACKSIDE T.C.C. OPERA TING TEMPERA TURE RANGE OPERATING TEMPERATURE DISSIP ATION FFACTOR ACTOR DISSIPA Q INSULA TION RESIST ANCE INSULATION RESISTANCE MOISTURE RESIST ANCE RESISTANCE THERMAL SHOCK HIGH TEMPERA TURE EXPOSURE TEMPERATURE SHORT TERM OVERLOAD ST ABILITY STABILITY

SILICON SILICON OXIDE GOLD ST ANDARD; ALUMINUM OPTIONAL STANDARD; GOLD, SUIT ABLE FOR EUTECTIC OR CONDUCTIVE EPOXY A TT ATCH SUITABLE ATT TTA +45ppm/°C, ±25ppm/°C -55°C TO +150°C 1KHz, 1V rms, 25°C, 0.1% 1Vrms, 1MHz, 50V rms, 25°C, 1000 MIN. 50Vrms, @ WORKING VOL TAGE, 109 Ω VOLT MIL-STD 202, METHOD 106, ∆ C: ±1pF OR 2% ∆ C MAX., WHICHEVER IS GREA TER GREATER MIL-STD 202, METHOD 107F 107F,, ∆ C: ±0.5pF MAX., MSI TYPICAL ±0.1pF 150°C, 100 HRS., ∆ C: ±0.5pF OR 1% ∆ C MAX., WHICHEVER IS GREA TER GREATER 1.5 X WORKING VOL TAGE, 5 SEC., ∆ C: 1.5X VOLT ±0.5pF OR 1% ∆ C MAX., WHICHEVER IS GREA TER GREATER 1000 HRS., 70° C, @ WORKING VOL TAGE ∆ C: 70°C, VOLT ±2.5pF OR ±2.5 % MAX. ∆ C, WHICHEVER IS GREA TER ±2.5% GREATER

CHIP CAP ACITORS CAPACITORS

WORKING VOLTAGE (V)

SIZE CAP ACIT ANCE V ALUES (pF) CAPACIT ACITANCE VALUES

MSCC 2 WORKING VOLTAGE vs CAPACITANCE

250 225 200 175 150 125 100 75 50 25 0

51 100

MSCC-4

250 225 200 175 150 125 100 75 50 25 0 4.7

0.030" x 0.030" (±0.003") x 0.010" (±0.001") 33 36 39 43 47 62 68 75 82 91

PART NUMBER DESIGNA TION DESIGNATION MSCC

XXXXX

SERIES

SIZE 2 3 4 5

TYPE

CAP ACIT ANCE V ALUE CAPACIT ACITANCE VALUE 5-Digit Number: First 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

EXAMPLE: MSCC5SA-510R0H-E = 0.055" x 0.055", Silicon Substrate, 510pF ol., Aluminum Pads 510pF,, ±2.5% TTol.,

TOL. OPTION pF ±0.5p *A =±0.5 E = Aluminum Pads H = 2.5% G = Gold Pads 5% J= K = 10% M = 20% * Use for MSCC-2 4.7pF to 10pF

BINARY MOS CAPACITORS MSBIN SERIES MSBIN Thin Film BINARY Capacitors have been designed to established industry standards. They offer great flexibility in capacitance value selection for Hybrid and Microwave circuits.

MSBIN-1, MSBIN-2

MSBIN-1 A

SIZE TOT AL CAP ACIT ANCE TOTAL CAPACIT ACITANCE WORKING VOL TAGE VOLT CAP ACIT ANCE V ALUES CAPACIT ACITANCE VALUES TOLERANCE

L A

1pF

C 2pF

MSBIN-2

D 4pF

0.019" x 0.030" (±0.003") x 0.010" (±0.001") 3.75pF 100 V DC 0.25pF 0.25pF,, 0.50pF 0.50pF,, 1.0pF 1.0pF,, 2.0pF 25%

SIZE TOT AL CAP ACIT ANCE TOTAL CAPACIT ACITANCE WORKING VOL TAGE VOLT CAP ACIT ANCE V ALUES CAPACIT ACITANCE VALUES TOLERANCE

8pF

MSBIN-3

0.019" x 0.030" (±0.003") x 0.010" (±0.001") 15pF 30 V DC 1pF 1pF,, 2pF 2pF,, 4pF 4pF,, 8pF 10%, 20%

MSBIN-3 A

B 1pF

2pF

4pF

8pF

SIZE TOT AL CAP ACIT ANCE TOTAL CAPACIT ACITANCE WORKING VOL TAGE VOLT CAP ACIT ANCE V ALUES CAPACIT ACITANCE VALUES TOLERANCE

16pF

MSBIN-4

0.019" x 0.048" (±0.003") x 0.010" (±0.001") 31pF 75 V DC 1pF 1pF,, 2pF 2pF,, 4pF 4pF,, 8pF 8pF,, 16pF 10%, 20%

MSBIN-4

L A

SIZE ACIT ANCE TOT AL CAP CAPACIT ACITANCE TOTAL WORKING VOL TAGE VOLT CAP ACIT ANCE V ALUES CAPACIT ACITANCE VALUES TOLERANCE

0.044" x 0.044" (±0.003") x 0.010" (±0.001") 93pF 75 V DC 3pF 3pF,, 6pF 6pF,, 12pF 12pF,, 24pF 24pF,, 48pF 10%, 20%

COMMON SERIES DA TA DAT

CHIP CAPACITORS CAP ACITORS

SUBSTRA TE SUBSTRATE DIELECTRIC BOND P AD PAD BACKSIDE

T.C.C. OPERA TING TEMPERA TURE OPERATING TEMPERATURE RANGE DISSIP ATION FFACTOR ACTOR DISSIPA Q INSULA TION RESIST ANCE INSULATION RESISTANCE MOISTURE RESIST ANCE RESISTANCE THERMAL SHOCK HIGH TEMPERA TURE EXPOSURE TEMPERATURE

L A

B 3pF

6pF

SHORT TERM OVERLOAD

12pF 24pF 48pF

ST ABILITY STABILITY F

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 123-D-0306

SILICON SILICON OXIDE GOLD ST ANDARD; ALUMINUM OPTIONAL STANDARD; GOLD, SUIT ABLE FOR EUTECTIC OR CONDUCTIVE SUITABLE EPOXY A TT ATCH ATT TTA +45ppm/°C, ±25ppm/°C -55°C TO +150°C 1KHz, 1Vrms, 25°C, 0.1% 1MHz, 50Vrms, 25°C, 1000 MIN. @ WORKING VOL TAGE, 109 Ω VOLT MIL-STD 202, METHOD 106, ∆ C: ±1pF OR 2% ∆ C MAX., WHICHEVER IS GREA TER GREATER MIL-STD 202, METHOD 107F 107F,, ∆ C: ±0.5pF MAX., MSI TYPICAL ±0.1pF 150°C, 100 HRS., ∆ C: ±0.5pF OR 1% ∆ C MAX., WHICHEVER IS GREA TER GREATER 1.5 X WORKING VOL TAGE, 5 SEC., ∆ C: 1.5X VOLT ±0.5pF OR 1% ∆ C MAX., WHICHEVER IS GREA TER GREATER 1000 HRS., 70° C, @ WORKING VOL TAGE ∆ C: 70°C, VOLT ±2. 5pF OR ±2.5 % MAX. ∆ C, WHICHEVER IS GREA TER ±2.5% GREATER

PART NUMBER DESIGNA TION DESIGNATION MSBIN

XXXXX

SERIES

SIZE 1 2 3 4

TYPE

ACIT ANCE V ALUE CAP CAPACIT ACITANCE VALUE 3R750 = 3.75pF MSBIN1 15R00 = 15pF MSBIN2 31R00 = 31pF MSBIN3 93R00 = 93pF MSBIN4

TOL. K = 10% M = 20% P = 25%

OPTION E = Aluminum Pads G = Gold Pads

EXAMPLE: MSBIN4SA-93R00M-G = 0.044" x 0.044", Silicon Substrate, 93pF ol., Gold Pads 93pF,, ±20% TTol.,

NETWORKS & ARRAYS In This Section... Thin Film Part Number Series ~ MSDR 3 Series ~ Dual Resistor Networks MSIR Series ~ Dual Isolated Resistor Networks MRCN Series ~ RC Networks MSRA, MSRB, MSRC Series ~ Resistor Arrays MSMT 116 Series ~ Log Resistors MSMT 117, 125 Series ~ Multi-tap Resistors

MSIR 3

MSMT117

*ID BAR

Pad 1

MRCN

0.030" 0.030"

R2 R1 ≤ R2 NOTCHED PAD INDICATES LOCATION OF R1

NEXT SECTION:

P ACKAGED RESISTORS PACKAGED

PREVIOUS SECTION:

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 153-A-0306

CHIP CAP ACITORS CAPACITORS

THIN FILM DUAL RESISTOR NETWORKS MSDR 3 SERIES *ID BAR

The MSDR series dual center -tapped chip resistor offers the high stability .C.R./T .C. center-tapped stability,, low noise, and low TT.C.R./T .C.R./T.C. tracking of thin film while providing greater flexibility in hybrid designs.

MECHANICAL DA TA DAT 1

0.030"

SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE

0.030" x 0.030" x 0.010" (±0.003") SILICON, ALUMINA, QUARTZ, OR GLASS NICHROME OR TTANT ANT ALUM NITRIDE ANTALUM 15K Å MINIMUM GOLD ST ANDARD.; ALUMINUM A VAILABLE STANDARD.; AV BARE SUBSTRA TE; GOLD BACK OPTIONAL SUBSTRATE;

ELECTRICAL DA TA DAT VALUES FROM 11Ω Ω TO 1M Ω PER SIDE; CONSULT SALES FOR SPECIFIC 1MΩ COMBINA TIONS OR FOR HIGHER V ALUES COMBINATIONS VALUES 1Ω TO 125K Ω/SIDE 125KΩ 0.01%, 0.02%, 0.05%, 0.1%, 0.25%, 0.5%, 1%, 2%, 5%, 10% (R1 & R2 trimmed to absolute tolerance when total tolerance <0.100 Ω) <0.100Ω R1 & R2 TRIMMED TO ABSOLUTE MINIMUM ±1% STD.; AVAIL. TO ±0.01% NICHROME: ±25ppm STD.; ±10ppm, ±5ppm OPTIONAL ALUM NITRIDE : ±150ppm STD.; ±50ppm, ±25ppm, ±10ppm OPTIONAL TANT ANTALUM TO ±2ppm/°C; VALUE DEPENDENT

RESIST ANCE RANGE RESISTANCE (Silicon, Quartz, and Glass) ALUMINA TOLERANCES 0.030"

R1 < R2 NOTCHED PAD INDICATES LOCATION OF R1

CENTER TTAP AP RA TIO RATIO T.C.R. T.C. TRACKING

SERIES DA TA DAT CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL TAGE OPERATING VOLT POWER RA TING RATING SILICON & ALUMINA QUARTZ & GLASS SHORT TIME OVERLOAD HIGH TEMP TEMP.. EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ABILITY ST STABILITY OPERA TING TEMP OPERATING TEMP.. RANGE ST ABILITY RA TIO STABILITY RATIO STRA Y DISTRIBUTED STRAY ACIT ANCE CAP CAPACIT ACITANCE SILICON ALUMINA QUARTZ

-20dB TYPICAL 400 V MIN. 1012Ω MIN. 100 V MAX. 250 mW TOT AL (70°C DERA TED LINEARL Y TO 150°C). P = E 2/R TOTAL DERATED LINEARLY 50 mW TOT AL (70°C DERA TED LINEARL Y TO 150°C). P = E 2/R TOTAL DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°°C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: 0.1% MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: 0. 03 % MSI TYPICAL 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: 0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.11% MSI TYPICAL 0.55% MAX. ∆R/R: 0. 1000 HRS., 70° C, 12 0.5% MAX. ∆R/R: 0.1% MSI TYPICAL 70°C, 1255mW mW,, ±±0.5% -5 -555°C TO +125°C 0.1% MAX. ∆R/R ST ANDARD STANDARD ANDARD:: 0.05% MAX. ∆R/R OPTIONAL 2pF 0.06pF 0.02pF

PART NUMBER DESIGNA TION DESIGNATION X

XXXXX / XXXXX

X/X

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC CODES R1 / R2 5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When required. 5th Digit Represents Number of Zeros. EXAMPLES: 300R0F/500R0F 25000B/10001B

TOLERANCE CODES R1 < R2 S = 0.01% X = 0.02% Q = 0.05% B = 0.1% C = 0.25% D = 0.5% F = 1% G = 2% J = 5% K = 10%

A G Q S

= = = =

Alumina Glass Quartz Silicon

N = Nichrome T = Tantalum Nitride

X OPTION TOR DESIGNATOR DESIGNA (If Required) A = ±50ppm/°C B = ±25ppm/°C C = ±10ppm/°C † D = ±5ppm/°C † E = Aluminum Bond Pads F = ±100ppm/°C **G = Gold Bond Pads GB = Gold Backside RB = 0.05% RA TIO RATIO RC = 0.1% RA TIO RATIO RD = 0.5% RA TIO RATIO

EXAMPLES: MSDR 3ST -300R0B/500R0B-A = Silicon/T antalum Nitride with 3ST-300R0B/500R0B-A Silicon/Tantalum ol., ±50ppm/°C TT.C.R., .C.R., w/ Gold Bond Pads R1 = 300 Ω; R2 = 500 Ω, ±0.1% TTol., 300Ω; 500Ω

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 108-G-0306

† Not Available on Alumina * PART MARKING AVAILABLE, CONSULT SALES. ** STD. IF NO OTHER OPTION REQUIRED.

NETWORKS & ARRA YS ARRAYS

MSDR 3

DUAL ISOLA TED THIN FILM NETWORKS ISOLATED MSIR 3 SERIES *ID BAR

The MSIR series dual isolated chip resistor offers greater flexibility for the hybrid designer seeking resistor pairs with excellent TT.C.R./T .C.R./T .C. tracking between resistors. .C.R./T.C.

MECHANICAL DA TA DAT 1

0.030"

SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE

0.030" x 0.030" x 0.010" (±0.003") SILICON, ALUMINA, QUARTZ, OR GLASS NICHROME OR TTANT ANT ALUM NITRIDE ANTALUM 15KÅ MINIMUM GOLD ST ANDARD; ALUMINUM A VAILABLE STANDARD; AV BARE SUBSTRA TE; GOLD BACK OPTIONAL SUBSTRATE;

ELECTRICAL DA DAT TA RESIST ANCE RANGE RESISTANCE

0.030"

R2 R1 ≤ R2 NOTCHED PAD INDICATES LOCATION OF R1

TOLERANCES RESIST ANCE RA TIO RESISTANCE RATIO T.C.R. T.C. TRACKING

VALUES FROM 11Ω Ω TO 1M Ω PER SIDE T SALES FOR SPECIFIC 1MΩ SIDE;; CONSUL CONSULT COMBINA TIONS OR FOR HIGHER V ALUES COMBINATIONS VALUES 0.01%, 0.02%, 0.05%, 0.1%, 0.25%, 0.5%, 1%, 2%, 5%, 10% ±1% STD.; AVAIL. TO ±0.01% NICHROME: ±25ppm STD.; ±10ppm, ±5ppm OPTIONAL TANT ALUM NITRIDE : ±150ppm STD.; ±50ppm, ±25ppm, ±10ppm OPTIONAL ANTALUM TO ±2ppm/°C; VALUE DEPENDENT

SERIES DA TA DAT CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL TAGE OPERATING VOLT POWER RA TING RATING SILICON & ALUMINA QUARTZ & GLASS SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING ST ABILITY RA TIO STABILITY RATIO STRA Y DISTRIBUTED STRAY CAP ACIT ANCE CAPACIT ACITANCE SILICON ALUMINA QUARTZ

-20dB TYPICAL 400 V MIN. 1012Ω MIN. 100 V MAX. 250 mW TOT AL (70°C DERA TED LINEARL Y TO 150°C). P = E 2/R TOTAL DERATED LINEARLY 50 mW TOT AL (70°C DERA TED LINEARL Y TO 150°C). P = E 2/R TOTAL DERATED LINEARLY 5X RA TED POWER, 25 0. 0.225% MAX. ∆R/R: 0.1% MSI TYPICAL RATED 25°°C, 5 SEC., ±±0. 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: 0. 03 % MSI TYPICAL 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: 0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: 0. 0.11% MSI TYPICAL 1000 HRS., 70° C, 12 0.5% MAX. ∆R/R: 0.1% MSI TYPICAL 70°C, 1255mW mW,, ±±0.5% -5 -555°C TO +125°C 0.1% MAX. ∆R/R ST ANDARD STANDARD ANDARD:: 0.05% MAX. ∆R/R OPTIONAL 2pF 0.06pF 0.02pF

NETWORKS YS & ARRA ARRAYS

PART NUMBER DESIGNA TION DESIGNATION MSIR 3

XXXXX / XXXXX

X/X

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC CODES R1 / R2

N = Nichrome T = Tantalum Nitride

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When required. 5th Digit Represents Number of Zeros. R1 ≤ R2 300R0F/500ROF 25000B/10001B

TOLERANCE CODES R1 ≤ R2 S = 0.01% X = 0.02% Q = 0.05% B = 0.1% C = 0.25% D = 0.5% F = 1% G = 2% J = 5% K = 10%

OPTION TOR DESIGNATOR DESIGNA (If Required) A = ±50ppm/°C B = ±25ppm/°C C = ±10ppm/°C † D = ±5ppm/°C † E = Aluminum Bond Pads F = ±100ppm/°C **G = Gold Bond Pads GB = Gold Backside RB = 0.05% RA TIO RATIO RC = 0.1% RA TIO RATIO RD = 0.5% RA TIO RATIO

A G Q S

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 109-G-0306

= = = =

Alumina Glass Quartz Silicon

EXAMPLES: MSIR 3ST -300R0B/500R0B-A = Silicon/T antalum Nitride with 3ST-300R0B/500R0B-A Silicon/Tantalum R1 = 300 Ω, ±0.1%, R2 = 500 Ω, ±0.1% TTol., ol., ±50ppm/°C TT.C.R., .C.R., 300Ω, 500Ω w/ Gold Bond Pads † Not Available on Alumina ART MARKING A VAILABLE, CONSUL T SALES. PART AV CONSULT *P ** STD. IF NO OTHER OPTION REQUIRED.

THIN FILM RC NETWORKS MRCN SERIES The MRCN series offers the high stability .C.R./T .C.C. tracking of thin film resistors combined stability,, low noise, and low TT.C.R./T .C.R./T.C.C. with MOS capacitors. This combination provides greater flexibility to the hybrid designer designer..

MECHANICAL DA TA DAT SUBSTRA TE SUBSTRATE DIELECTRIC RESISTOR BOND PADS BACKSIDE SURFACE

SILICON SILICON OXIDE TANT ALUM NITRIDE ANTALUM 10,000 Å MINIMUM: ALUMINUM OR 15,000 Å MINIMUM: GOLD GOLD; SUIT ABLE FOR EUTECTIC OR SUITABLE CONDUCTIVE EPOXY A TT ACH ATT TTACH

ELECTRICAL DA TA DAT VALUES TOLERANCES RA TIO TOLERANCE RATIO T.C.R. T.C. TRACKING T.C.C.

RESISTORS 2Ω TO 1.2M Ω 1.2MΩ 0.1%, 0.5%, 1%, 2%, AVAILABLE TO ±0.1% ±150ppm/°C ST ANDARD STANDARD OPTIONAL TO ±100ppm/°C ±2ppm/°C --------------Consult sales for other values and

CAP ACITORS CAPACITORS 4.7pF TO 1000pF 5%, 10%, 20% (±0.5pF < 20pF) ------------------------------------------+45ppm/°C, ±25ppm/°C tolerances.

SERIES DA TA DAT OPERA TING TEMP RANGE OPERATING RESISTORS CURRENT NOISE

HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY DISSIP ATION FFACTOR ACTOR DISSIPA Q

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 127-D-0306

Consult Sales for part numbers.

101 Ω TO 250K Ω: -40dB 101Ω 250KΩ ≤ 100 Ω, ≥ 250K Ω: -30dB 100Ω 250KΩ 400 V MIN. 1012Ω MIN. 100 V MAX. 250 mW (70°C DERA TED LINEARL Y TO 150°C) P = E 2/R DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°° C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 03 % MSI TYPICAL 0.03 03% 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL MIL-STD 202, METHOD 107F 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL 1000 HRS., 70° 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 70°C, POWER,, ±±0.5% C, 100% POWER

NETWORKS & ARRA YS ARRAYS

DIELECTRIC BREAKDOWN ANCE INSULA TION RESIST RESISTANCE INSULATION OPERA TING VOL TAGE OPERATING VOLT POWER RA TING RATING SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY CAPACITORS INSULA TION RESIST ANCE INSULATION RESISTANCE SHORT TERM OVERLOAD

-5 -555°C TO +125°C

@ WORKING VOL TAGE, 109Ω VOLT X WORKING VOL TAGE, 5 SEC., 1.5 1.5X VOLT ∆C:±0.5pF OR 1% ∆C MAX WHICH EVER IS GREA TER GREATER TER 150°C, 100 HRS., ∆C: ±0.5pF OR ±1% ∆C MAX., WHICH EVER IS GREA GREATER 5pF MAX., ±0.1pF MSI TYPICAL MIL-STD 202, METHOD 107F 107F,, ∆C: ±0. 0.5pF MIL-STD 202, METHOD 106, ∆C: ±1pF OR ±2% ∆C MAX., WHICH EVER IS GREA TER GREATER 1000 HRS., 70° C, @ WORKING VOL TAGE, ∆C; ±2.5pF OR ±2.5% MAX., 70°C, VOLT WHICH EVER IS GREA TER GREATER 1KHz, 1Vrms, 25°C, 0.1% 1MHz, 50Vrms, 25°C, 1000 MIN.

THIN FILM RESISTOR ARRAYS MSRA / MSRB / MSRC SERIES

MSRA

0.060"

MECHANICAL DA TA DAT

0.090" 16

The MSRA Series, isolated connection resistor array, MSRB Series, common connection resistor array, and MSRC Series, series connection resistor array, all with 10 mil centers, are ideal for the hybrid designer seeking a SIP or DIP configuration in chip form. All three series are designed with eight resistors of the same value and tolerance. They feature excellent TT.C.R. .C.R. tracking and are of optimum use when space is a premium. Different arrays from 3-12 resistors are also available.

0.090" x 0.060" x 0.010" (±0.003") (for the 8-resistor array) SILICON NICHROME OR TTANT ANT ALUM NITRIDE ANTALUM 15,000 Å MINIMUM GOLD; 10,000 Å MINIMUM: ALUMINUM OPTIONAL BARE SUBSTRA TE SUBSTRATE GOLD BACK OPTIONAL

SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE

ELECTRICAL DA TA DAT 1

0.060"

0.090" 16

10 Ω TO 1M Ω 10Ω 1MΩ 0.01%, 0.05%, 0.1%, 0.25%, 0.5%, 1%, 2%, 5%, 10% EQUAL TO ABSOLUTE TOLERANCE OR ±1%, WHICHEVER IS LESS; TO ±0.05% AVAILABLE ±50ppm (NiCr) to ±5ppm OPTIONAL; ±150ppm (T aN) to ±10ppm OPTIONAL (TaN) ±5ppm/°C to ±2ppm/°C -20dB TYPICAL 400 V MIN. 1012Ω MIN. 100 V MAX. 50 mW PER RESISTOR. (70°C DERA TED LINEARL Y TO 150°C). P=E2/R DERATED LINEARLY R/R: ± 0.1% MSI TYPICAL 5X RA TED POWER, 25 ° C, 5 SEC., ± 0. 2 5% MAX. ∆ RATED 25° ±0. 0.2 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 03 % MSI TYPICAL 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL 0.5% MAX. ∆R/R 1000 HRS., 70° R/R;; 70°C, C, 100% POWER, ABSOLUTE ±±0.5% 0.1% MAX ∆R/R RA TIO ±±0.1% RATIO R/R;; ±0.1% ABS. MSI TYPICAL

RESIST ANCE RANGE RESISTANCE TOLERANCE RA TIO TOLERANCE RATIO

MSRB

T.C.R. T.C. TRACKING CURRENT NOISE DIELECTRIC BREAKDOWN INSULA TION RESIST ANCE INSULATION RESISTANCE OPERA TING VOL TAGE OPERATING VOLT POWER RA RATING TING SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY

PART NUMBER DESIGNA TION DESIGNATION 1

MSRC

0.060"

NETWORKS & ARRA YS ARRAYS

0.090" 16

MSRX

XXXXX

SERIES

# OF RES.

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC VALUE

TOLERANCE

OPTION

A B C

3-12 RESISTORS AVAILABLE

S = Silicon

N = Nichrome T = Tantalum Nitride

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

S Q B C D F G J K

= 0.01%* = 0.05%* = 0.1% = 0.25% = 0.5% = 1% = 2% = 5% = 10%

EXAMPLES: MSRA-8-SN-10001F-AE = 8 Resistors - 10K Ω each, ±1% TTol., ol., ±50ppm/°C TCR, 10KΩ Aluminum Bond Pads. Isolated Resistor Configuration * Consult Sales for available value Custom configurations available upon request. Consult Sales for ohmic values > 1M Ω 1MΩ

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 117-E-0306

A B C D E

= ±50ppm/°C = ±25ppm/°C = ±10ppm/°C = ±5ppm/°C = Aluminum Bond Pads F = ±100ppm/°C G = Gold Bond Pads GB = Gold Backside RA = ±0.01% RA TIO RATIO RB = ±0.05% RA TIO RATIO RC = ±0.1% RA TIO RATIO RE = ±0.25% RA TIO RATIO TIO RD = ±0.5% RA RATIO

THIN FILM MULTI-TAP RESISTORS MSMT 116 SERIES LOG RESISTOR MECHANICAL DA TA DAT SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE

0.060" x 0.020" x 0.010" (±0.003") SILICON OR ALUMINA TANT ALUM NITRIDE ANTALUM 25,000 Å MINIMUM GOLD BARE SUBSTRA TE SUBSTRATE GOLD BACK OPTIONAL. SUIT ABLE FOR EUTECTIC DIE A TT ACH SUITABLE ATT TTACH

ELECTRICAL DA DAT TA RESIST ANCE RANGE RESISTANCE

0.060"

TOLERANCE T.C.R. NOISE POWER RA TING TO 70°C RATING OPERA TING VOL TAGE OPERATING VOLT SHORT TERM OVERLOAD HIGH TEMP TEMP.. EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP OPERATING TEMP.. RANGE

240 Ω TOT AL 240Ω TOTAL Ω, 10 Ω, 20 Ω, 50 Ω, 50 Ω, AND 100 Ω) 10Ω 10Ω, 20Ω, 50Ω, 50Ω, 100Ω) (SIX RESISTIVE ELEMENTS, 10 5% OR 10% (APPLIES TO INDIVIDUAL RESISTIVE ELEMENTS) ±150ppm/°C ST ANDARD STANDARD -20dB MAX 125mW 100V MAX 5X RA TED POWER, 25 0. RATED 25°°C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL 03 % MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL 1000 HRS., 70° C, 100% POWER 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 70°C, POWER,, ±±0.5% -5 -555°C TO +125°C

PART NUMBER DESIGNA TION DESIGNATION

0.020"

MSMT

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

OHMIC VALUE

TOLERANCE

116

A = Alumina S = Silicon

RESISTIVE FILM T = Tantalum Nitride

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

J = 5% K = 10%

OPTION TOR DESIGNATOR DESIGNA GB = Gold Backside G = Gold Bond Pads

EXAMPLES: MSMT 116A T-240R0J-GB = 240 Ω, ±5% 116AT 240Ω Alumina Substrate, Gold Backside. Consult Sales for other values / configurations

NETWORKS & ARRA YS ARRAYS

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076

DCN TF 112-H-0306

THIN FILM MUL TI-T AP RESISTORS MULTI-T TI-TAP MSMT 117 SERIES

Pad 1

MECHANICAL DA TA DAT

THIN FILM MULTI-TAP RESISTORS SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE

0.030"

0.030" x 0.030" x 0.010" (±0.003") SILICON TANT ALUM NITRIDE ANTALUM 25,000 Å MINIMUM GOLD; ALUMINUM OPTIONAL BARE SUBSTRA TE ST ANDARD SUBSTRATE STANDARD GOLD BACK OPTIONAL. SUIT ABLE FOR EUTECTIC DIE A TT ACH SUITABLE ATT TTACH

ELECTRICAL DA TA DAT

0.030"

RESIST ANCE RANGE RESISTANCE

80 Ω − 160K Ω 80Ω 160KΩ

OTHER VALUES AVAILABLE, PLEASE CONSULT SALES

(THE SEVEN RESISTORS BETWEEN PADS 1 AND 8 ARE EACH 12.5% OF THE TOT AL RESIST ANCE V ALUE; THE FIVE RESISTORS BETWEEN P ADS TOTAL RESISTANCE VALUE; PADS 8 AND 13 ARE EACH 2.5% OF THE TOT AL RESIST ANCE V ALUE.) TOTAL RESISTANCE VALUE.)

MSMT 125 SERIES MECHANICAL DA TA DAT SIZE SUBSTRA TE SUBSTRATE RESISTOR BOND PADS BACKSIDE SURFACE

Pad 1

0.034" x 0.034" x 0.010" (±0.003") SILICON TANT ALUM NITRIDE ANTALUM 25,000 Å MINIMUM GOLD; ALUMINUM OPTIONAL TE BARE SUBSTRA SUBSTRATE ACH GOLD BACK OPTIONAL. SUIT ABLE FOR EUTECTIC DIE A TT TTACH SUITABLE ATT

ELECTRICAL DA TA DAT 550 Ω - 275K Ω 550Ω 275KΩ

RESIST ANCE RANGE RESISTANCE

1st 10 Resistors =

0.034"

TOT AL RESIST ANCE TOTAL RESISTANCE

110

2nd 10 Resistors =

TOT AL RESIST ANCE TOTAL RESISTANCE

OTHER V ALUES A VAILABLE, PLEASE CONSUL T SALES VALUES AV CONSULT

117 / 125 COMMON SERIES DA TA DAT 0.034"

NETWORKS & ARRA YS ARRAYS

TOLERANCES T.C.R. CURRENT NOISE POWER RA TING RATING OPERA TING VOL TAGE OPERATING VOLT SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE ST ABILITY STABILITY OPERA TING TEMP RANGE OPERATING

5%, 10% (APPLIES TO INDIVIDUAL RESISTIVE ELEMENTS) ±150ppm/°C ST ANDARD STANDARD -30dB MAX 250 mW MAX. (70°C DERA TED LINEARL Y TO 150°C) P = E 2/R DERATED LINEARLY 100V MAX 5X RA TED POWER, 25 0. RATED 25°° C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL 03 % MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 03% 0.03 MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL 1000 HRS., 70° C, 100% POWER 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 70°C, POWER,, ±±0.5% -5 -555°C TO +125°C

PART NUMBER DESIGNA TION DESIGNATION

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 113-G-0306

MSMT XXX

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC VALUE

TOLERANCE

OPTION

117 125

S = Silicon

T = Tantalum Nitride

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

J = 5% K = 10%

E = Aluminum Bond Pads GB = Gold Backside G = Gold Bond Pads

EXAMPLE: MSMT 125-550R0K-G = 125 Series, 550 Ω Total Res. V alue, 550Ω Value, ±10% TTol., ol., Gold Bond Pads Bare Backside

PACKAGED RESISTORS In This Section... Thin Film Part Number Series ~ RSMT Series ~ Surface Mount Resistor Chips RSMT 23 Series ~ Surface Mount Resistor Chips RSMA Series ~ Surface Mount Resistor Networks RSMA ~ Schematics

RSMT

RSMT-23

RSMA

0.090

BOTTOM VIEW

0.112

NEXT SECTION:

JUMPERS, KITS & SUBSTRA TES SUBSTRATES

PREVIOUS SECTION:

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 154-A-0306

NETWORKS & ARRA YS ARRAYS

THIN FILM SURFACE MOUNT RESISTORS MINI-SM TTM RSMT SERIES RESISTORS MINI-SMT

MINI-SMTTM thin film resistors offer maximum benefits in ohmic value ranges from 11Ω Ω through 100M Ω. T.C.R.'s to 100MΩ. ±5ppm/°C - and absolute tolerances to 0.05%. Available in 0505, 0805, 1206 and 0603 sizes, these resistors provide proven thin film performance in a surface mount solderable style.

MECHANICAL DA TA DAT H

SIZE: 0505 0805 1206 0603 SUBSTRA TE SUBSTRATE RESISTOR BONDING MA TERIAL MATERIAL BOND P AD SIZE PAD 0505 0805 1206 0603

0.050" x 0.050" (±0.003") x 0.050" NOM. 0.080" x 0.050" (±0.003") x 0.050" NOM. 0.120" x 0.060" (±0.003") x 0.050" NOM. 0.060" x 0.030" (±0.003") x 0.050" NOM. ALUMINA PROPRIET ARY PROPRIETARY PALLADIUM SILVER OR SOLDER, GOLD OPTIONAL 0.015" x 0.050" ±0.005" 0.015" x 0.050" ±0.005" 0.020" x 0.060" ±0.005" 0.010" x 0.030" ±0.005"

ELECTRICAL DA TA DAT L

BOTTOM VIEW

1Ω TO 100M Ω 100MΩ 0.1%, 0.5%, 1%, 2%, 5%, 10%: TO 0.05% AVAILABLE

RESIST ANCE RANGE RESISTANCE TOLERANCES T.C.R. 1Ω TO 50M Ω 50MΩ 50M Ω TO 100M Ω 50MΩ 100MΩ

±150ppm/°C ST ANDARD: OPTIONAL TO ±5ppm/°C STANDARD: ±300ppm/°C ST ANDARD: OPTIONAL TO ±100ppm/°C STANDARD:

SERIES DA TA DAT 101 Ω TO 250K Ω: -40dB 101Ω 250KΩ ≤ 100 Ω, ≥ 250K Ω: -30dB 100Ω 250KΩ 400 V MIN. 1012Ω MIN. 100 V MAX. 250 mW (70°C DERA TED LINEARL Y TO 150°C) P = E ²/R DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°°C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL 0.25% MAX. ∆R/R: ±0. 03 % MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL 1000 HRS., 70° C, 12 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 70°C, 1255mW mW,, ±±0.5% -5 -555°C TO +150°C

PART NUMBER DESIGNA TION DESIGNATION A

XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

1:(0505) 2:(1206) 3:(0805) 4:(0603)

A = Alumina

P = Proprietary

OHMIC VALUE 5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

TOLERANCE Q = 0.05%** B = 0.1%** D = 0.5% F = 1% G = 2% J = 5% K = 10%

EXAMPLES: RSMT 1 AP-50003B-CT = 0505, 5M Ω, ±0.1% TTol., ol., 10ppm/°C with 5MΩ Solder TTermination. ermination.

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 134-C-0306

* CONSUL VAILABILITY CONSULT AV T SALES FOR A ** VALUE DEPENDENT

PACKAGED RESISTORS

RSMT X

THIN FILM SURFACE MOUNT RESISTORS MINI-SM T T M RSMT -23 SERIES RESISTOR MINI-SMT RSMT-23

RSMT -23 RSMT-23 (23:) Direct Replacement for SOT-23

MINI-SMT -23TM thin film resistors offer maximum benefits in ohmic value ranges from 11Ω Ω through 500M Ω. MINI-SMT-23 500MΩ. T.C.R.'s to ±5ppm/°C - and absolute tolerances to 0.05%. These packaged resistors provide proven thin film performance in a surface mount solderable style.

MECHANICAL DA TA DAT H

SIZE: RSMT(23)

0.112" x 0.090" (±0.005") x 0.050"MAX NOM.

SUBSTRA TE SUBSTRATE RESISTOR BONDING MA TERIAL MATERIAL BOND PAD SIZE (23)

ALUMINA PROPRIET ARY PROPRIETARY GOLD OR SOLDER, PALLADIUM SILVER OPTIONAL 0.018" x 0.020" ±0.003"

ELECTRICAL DA TA DAT

0.090

0.112

1 Ω TO 500M Ω 500MΩ 0.1%, 0.5%, 1%, 2%, 5%, 10%: TO 0.05% AVAILABLE

RESIST ANCE RANGE RESISTANCE TOLERANCES T.C.R. 1Ω TO 50M Ω 50MΩ 50M Ω TO 500M Ω 50MΩ 500MΩ

±150ppm/°C ST ANDARD: OPTIONAL TO ±5ppm/°C STANDARD: ±300ppm/°C ST ANDARD: OPTIONAL TO ±100ppm/°C STANDARD:

SERIES DA TA DAT 101 Ω TO 250K Ω: -40dB 101Ω 250KΩ ≤ 100 Ω, ≥ 250K Ω: -30dB 250KΩ 100Ω 400 V MIN. 1012Ω MIN. 100 V MAX. 250 mW (70°C DERA TED LINEARL Y TO 150°C) P = E ²/R DERATED LINEARLY 5X RA TED POWER, 25 0. RATED 25°°C, 5 SEC., ±±0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL 0.25% MAX. ∆R/R: ±0. 03 % MSI TYPICAL 150°C, 100 HRS., ±±0.25% 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL 1000 HRS., 70° C, 12 0.5% MAX. ∆R/R: ±0.1% MSI TYPICAL 70°C, 1255mW mW,, ±±0.5% -5 -555°C TO +150°C

PART NUMBER DESIGNA TION DESIGNATION RSMT 23

XXXXX/XXXXX

SERIES

SUBSTRA TE SUBSTRATE

RESISTIVE FILM

OHMIC VALUE R1 / R2 5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros.

TOLERANCE Q = 0.05%** B = 0.1%** D = 0.5% F = 1% G = 2% J = 5% K = 10%

OPTION TOR DESIGNATOR DESIGNA (If Required) A = ±50ppm/°C B = ±25ppm/°C** C = ±10ppm/°C** D = ±5ppm/°C** F = ±100ppm/°C T = Solder Terminations T3 = Leadfree Solder Terminations U = Untinned TR = Tape & Reel* PS = Pd Silver Bond Pads G = Gold Bond Pads RA = ±0.01% RA TIO RATIO RB = ±0.05% RA TIO RATIO RC = ±0.1% RA TIO RATIO RE = ±0.25%RA TIO ±0.25%RATIO RD = ±0.5% RA TIO RATIO

PACKAGED RESISTORS

(23): 0.112x A = Alumina P = Proprietary 0.090x0.050

EXAMPLES: RSMT 23 AP-50003B-CT = 0505, 5M Ω, ±0.1% TTol., ol., ±10ppm/°C with 5MΩ Solder TTermination. ermination.

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 148-B-0306

*CONSUL T SALES FOR A VAILABILITY *CONSULT AV **VALUE DEPENDENT

MINI SURFACE MOUNT NETWORKS RSMA Mini-Surface Mount Resistor Networks RSMA Style mini-SMT thin film resistor networks. They feature Mini-Systems' exceptional electrical characteristics and are available in 8, 14 and 16 lead configurations.

MECHANICAL DA TA DAT PACKAGE STYLE PACKAGE CONFIGURA TION CONFIGURATION LEAD PITCH LEAD MA TERIAL MATERIAL

SMT TED SMT,, EPOXY COA COATED 8, 14 OR 16 LEADS 25 or 50 MILS PALLADIUM SILVER OR SOLDER TINNED

ELECTRICAL DA TA DAT 10 Ω TO 1M Ω; RESISTOR ELEMENTS 10Ω 1MΩ TO 100M Ω A VAILABLE. CONSUL T SALES 100MΩ AV CONSULT ±150ppm/°C ST ANDARD; TO ±5ppm/°C A VAILABLE; V ALUE DEPENDENT STANDARD; AV VALUE ±2ppm/°C ST ANDARD; TO ±1ppm/°C A VAILABLE STANDARD; AV 0.05%, 0.1%, 0.25%, 0.5%, 1%, 2%, 5%, 10%; VALUE DEPENDENT ±1% ST ANDARD; A VAILABLE TO ±0.05%; V ALUE DEPENDENT STANDARD; AV VALUE <-30dB TYPICAL 100 V MAX. 50 mW/RESISTOR (70°C DERA TED LINEARL Y TO 150°C); P=E2/R DERATED LINEARLY 400 mW* (70°C DERA TED LINEARL Y TO 150°C); P=E2/R DERATED LINEARLY 5X RA TED POWER, 25 0. 0.225% MAX. ∆R/R: ±0.1% MSI TYPICAL RATED 25°°C, 5 SEC., ±±0. 150°C, 100 HRS., ±±0.25% 0.25% MAX. ∆R/R: ±0. 03 % MSI TYPICAL 0.03 03% MIL-STD 202, METHOD 107F 0.25% MAX. ∆R/R: ±0.1% MSI TYPICAL 107F,, ±±0.25% MIL-STD 202, METHOD 106, ±±0. 0. 0.55% MAX. ∆R/R: ±0. 0.11% MSI TYPICAL -55°C TO +150°C 1000 HRS., 70°C, 100% POWER, ±0.5% MAX ∆R/R R/R;; ±0.1% MSI TYPICAL

RESIST ANCE RANGE RESISTANCE T.C.R. T.C. TRACKING ABSOLUTE TOLERANCE RA TIO TOLERANCE RATIO CURRENT NOISE OPERA TING VOL TAGE OPERATING VOLT POWER RA TING RATING PACKAGE POWER SHORT TERM OVERLOAD HIGH TEMP EXPOSURE THERMAL SHOCK MOISTURE RESIST ANCE RESISTANCE OPERA TING TEMP OPERATING TEMP.. RANGE ST ABILITY STABILITY

DIMENSIONS B

RSMA25

A B C D E F G H

8 LEAD 150 ± 5 150 ± 5 10 25 15 ± 2 45 25 50 ± 5

14 LEAD 150 ± 5 175 ± 5 10 25 15 ± 2 45 25 50 ± 5

16 LEAD 150 ± 5 200 ± 5 10 25 15 ± 2 45 25 50 ± 5

ALL DIMENSIONS IN MILS

RSMA50

Pin 1

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 145-B-0306

Alumina Substrate Low Moisture Absorbtion Epoxy Encapsulant

SHOWN ABOVE IS RSMA50-16 or RSMA25-16 Consult Sales For Custom Configurations. *Package Power for (8) Resistors.

8 LEAD 240 ± 5 190 ± 5 35 50 15 ± 2 45 30 50 ± 5

14 LEAD 240 ± 5 340 ± 5 35 50 15 ± 2 45 30 50 ± 5

16 LEAD 240 ± 5 390 ± 5 35 50 15 ± 2 45 30 50 ± 5

ALL DIMENSIONS IN MILS

PACKAGED RESISTORS

Pin 1 Palladium Silver, or Optional Solder Terminations

A B C D E F G H

MINI SURFACE MOUNT NETWORKS RSMA Mini-Surface Mount Resistor Networks SCHEMA TICS SCHEMATICS STYLE "SA" ISOLATED 16

STYLE "SC" SERIES

STYLE "SD" DIVIDER

STYLE "SB" COMMON 14

R R1

PART NUMBER DESIGNA TION DESIGNATION RSMAXX

XXXXX

SERIES

#LEADS

STYLE

VALUE/ RESISTOR

TOLERANCE

OPTION

25 50

8 14 16

SA = SB = SC = SD =

Isolated Common Series Divider

5-Digit Number: 1st 4 Digits Are Significant With "R" As Decimal Point When Required. 5th Digit Represents Number of Zeros. EXAMPLE: 10001 = 10K

Q B C D F G J K

= 0.05% = 0.1% = 0.25% = 0.5% = 1% = 2% = 5% = 10%

PACKAGED RESISTORS

EXAMPLE: RSMA50-16-SA-10002F-ARD = 16 Lead Pkg., 8 - 100K Ω Resistors, 100KΩ Isolated Connections, ±1% TTol., ol., ±50ppm/°C, ±0.5% Ratio, Untinned.

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 145-B-0306

A = ±50ppm/°C B = ±25ppm/°C C = ±10ppm/°C D = ±5ppm/°C RB = 0.05% Ratio RC = 0.1% Ratio RD = 0.5% Ratio RE = 0.25% Ratio T = Solder TTinned inned T3 = Leadfree TTinned inned U = Untinned. Std. Z = Commercial Inspection (Always used when no other option is req.)

JUMPERS, SUBSTRATES & KITS In This Section... Thin Film Part Number Series ~ MSJC & W AJC Series ~ Chip Jumpers WAJC CUSTOM P ATTERNED Substrates PA KITS ~ W ATF Series ~ Surface Mount Chips WA KITS ~ MSTF & MSCC Series ~ Surface Mount Resistor Networks

WAJC

MSJC W

T L

SHOWN WITH OPTIONAL GOLD BACK

WRAPAROUND

COUPLER PATTERNIZED PLATE

PREVIOUS SECTION:

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 155-A-0306

METALLIZED PLATE

P ACKAGED RESISTORS PACKAGED

THIN FILM CHIP JUMPERS MSJC & W AJC SERIES WAJC MSJC and WAJC Series Chip Jumpers can be used as zero ohm jumpers, bonding islands, and stand offs for specific applications. Available in a variety of standard sizes, as well as special sizes for your custom applications.

MSJC SERIES MSJC W

SHOWN WITH OPTIONAL GOLD BACK

SERIES L W TOLERANCE MSJC - 1 0.010" x 0.010" ±0.003" MSJC - 2 0.020" x 0.020" ±0.003" MSJC - 3 0.030" x 0.030" ±0.003" MSJC - 4 0.040" x 0.040" ±0.003" MSJC - 5 0.050" x 0.050" ±0.003" MSJC - 10 0.100" x 0.100" ±0.003" MSJC - 35 0.035" x 0.035" ±0.003" MSJC - 75 0.075" x 0.050" ±0.003" CUSTOM SIZES AVAILABLE, CONSULT SALES SUBSTRA TE 99.6% ALUMINA; OTHER SUBSTRA TE MA TERIALS SUBSTRATE SUBSTRATE MATERIALS AVAILABLE UPON REQUEST MET ALLIZA TION GOLD, 25K Å NOMINAL METALLIZA ALLIZATION THICKNESSES 0.010", 0.015", 0.020", 0.025" ANCE 10 MILLIOHMS PER SQUARE, TYPICAL RESIST RESISTANCE

PART NUMBER DESIGNA TION DESIGNATION MSJC

SIZE

MA TERIAL MATERIAL

OPTION AND SUBSTRA TE THICKNESS SUBSTRATE

1 2 3 4 5 10 35 75

AT = ALUMINA SUBSTRA TE SUBSTRATE

G10 G15 G20 G25 GB10 GB15 GB20 GB25

= One Side Gold, 0.010" = One Side Gold, 0.015" = One Side Gold, 0.020" = One Side Gold, 0.025" = With Gold Back, 0.010" = With Gold Back, 0.015" = With Gold Back, 0.020" = With Gold Back, 0.025"

EXAMPLE: MSJC 10-A T-GB10 = 0.100" X 0.100" X 0.010" JUMPER WITH GOLD BACK 10-AT

WAJC SERIES SERIES

WAJC W

WRAPAROUND

TOLERANCE

WAJC - 1 0.040" x 0.020" ±0.003" WAJC - 2 0.035" x 0.035" ±0.003" ±0.003" WAJC - 3 0.075" x 0.050" 0.050" x 0.050" ±0.003" WAJC - 4 WAJC - 5 0.126" x 0.063" ±0.003" WAJC - 6 0.100" x 0.050" ±0.003" 0.020" x 0.020" ±0.003" WAJC - 7 0.055" x 0.025" ±0.003" WAJC - 8 WAJC - 9 0.153" x 0.050" ±0.003" CUSTOM SIZES AVAILABLE, CONSULT SALES SUBSTRA TE 99.6% ALUMINA; OTHER SUBSTRA TE MA TERIALS SUBSTRATE SUBSTRATE MATERIALS AVAILABLE UPON REQUEST MET ALLIZA TION GOLD, 25K Å NOMINAL METALLIZA ALLIZATION THICKNESSES 0.010", 0.015", 0.020", 0.025" RESIST ANCE 10 MILLIOHMS PER SQUARE, TYPICAL RESISTANCE

PART NUMBER DESIGNA TION DESIGNATION WAJC

AT MA TERIAL MATERIAL AT = ALUMINA SUBSTRA TE SUBSTRATE

THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 121-C-0306

Solder option applies to all conductor surfaces

X OPTION AND SUBSTRA TE THICKNESS SUBSTRATE G10 = Gold, 0.010" G15 = Gold, 0.015" G20 = Gold, 0.020" G25 = Gold, 0.025" T10 = SN62 Solder Solder,, 0.010" T15 = SN62 Solder Solder,, 0.015" T20 = SN62 Solder Solder,, 0.020" T25 = SN62 Solder Solder,, 0.025" T310 = Leadfree Solder Solder,, 0.010" T315 = Leadfree Solder Solder,, 0.015" T320 = Leadfree Solder Solder,, 0.020" T325 = Leadfree Solder Solder,, 0.025"

EXAMPLE: W AJC 6-A T-G10 = 0.100" X 0.050" X 0.010" WRAP AROUND JUMPER WAJC 6-AT WRAPAROUND

JUMPERS, SUBSTRA TES SUBSTRATES & KITS

MINI-SYSTEMS, INC.

X SIZE 1 2 3 4 5 6 7 8 9

CUSTOM PATTERNED SUBSTRATES Advanced manufacturing methods insure superior sheet Rho uniformity, gold thickness control, and metallization adhesion. Our custom manufacturing capabilities allow us to meet and exceed the most demanding custom applications.

COUPLER

MECHANICAL DA TA DAT SUBSTRA TE SUBSTRATE SIZE THICKNESS SURFACE FINISH LINE WIDTH DEFINITION SPECIAL TY MA TERIALS SPECIALTY MATERIALS

ALUMINA 99.6%, QUARTZ, ALUMINUM NITRIDE, BeO, GLASS, SILICON TO 4" x 4" 0.010", 0.015", 0.020", 0.025"; ST ANDARD STANDARD AS FIRED 2 - 3 µ"; POLISHED < 2 µ" RESISTOR P ATTERNING TO 2 MICRONS PA CONDUCTOR - 100 µ" OF GOLD; 0.5 MILS (20 MICRONS) ±0.05 MILS ONE, TWO, OR SIX-SIDED MET ALLIZA TIONS, THROUGH-HOLES, METALLIZA ALLIZATIONS, AND EDGE WRAPS, CUSTOM LASER CUTOUTS.

ELECTRICAL DA TA DAT PATTERNIZED PLATE

SHEET Rho Ta N NiCr RESISTOR TOLERANCE RA TIO RATIO

5 Ω / Sq. TO 200 Ω / Sq. 5 Ω / Sq. TO 200 Ω / Sq.

T.C.R. SILICON, QUARTZ, GLASS, BeO, ALUMINUM NITRIDE

NICHROME ANDARD STANDARD ±25ppm/°C ST OPTIONAL TO ±5ppm/°C

TANT ALUM NITRIDE ANTALUM ANDARD STANDARD ±25ppm/°C ST OPTIONAL TO ±10ppm/°C

±25ppm/°C ST ANDARD STANDARD OPTIONAL TO ±5ppm/°C

±25ppm/°C ST ANDARD STANDARD OPTIONAL TO ±10ppm/°C

ALUMINA

T.C. TRACKING OTHER MET ALS METALS

METALLIZED PLATE

±1% ST ANDARD STANDARD OPTIONAL TO ±0.01% AVAILABLE TO ±0.01%

TO ±2ppm/°C ST ANDARD STANDARD NICHROME, TTANT ANT ALUM, SICHROME, P ALLADIUM, ANTALUM, PALLADIUM, TITUNGSTEN, GOLD, NICKEL, ALUMINUM

JUMPERS, TES SUBSTRATES SUBSTRA & KITS

Custom Part Numbers Will be Assigned. Consult Engineering for further information.

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 132-C-0306

THIN FILM CHIP RESISTOR KITS SURFACE MOUNT CHIP RESISTOR KITS WATF-1 KITS & W ATF-8 KITS (39 OHMIC V ALUES) WA VALUES) 2 8 20 50 120 330 830

3 9 22 68 150 390 910

4 10 27 72 180 420 1K

5 12 33 83 200 500

6 15 39 91 220 680

7 18 42 100 270 720

WATF-2 KITS & W ATF-7 KITS (65 OHMIC V ALUES) WA VALUES) 2 20 50 120 330 830 2K 5K 12K 33K 83K

5 22 68 150 390 910 2.2K 6.8K 15K 39K 91K

10 27 72 180 420 1K 2.7K 7.2K 18K 42K 100K

12 33 83 200 500 1.2K 3.3K 8.3K 20K 50K 120K

15 39 91 220 680 1.5K 3.9K 9.1K 22K 68K 150K

18 42 100 270 720 1.8K 4.2K 10K 27K 72K

WATF-3 KITS & W ATF-4 KITS (71 OHMIC V ALUES) WA VALUES) SAME V ALUES AS W ATF-2 KIT WITH THESE ADDITIONAL V ALUES VALUES WA VALUES 180K 200K 220K 270K 330K

390K

WATF-5 KITS & W ATF-6 KITS (74 OHMIC V ALUES) WA VALUES) SAME V ALUES AS W ATF-3 KIT WITH THESE ADDITIONAL V ALUES VALUES WA VALUES 420K 500K 680K

WATF-9 KITS (78 OHMIC V ALUES) VALUES) SAME V ALUES AS W ATF-5 KIT WITH THESE ADDITIONAL V ALUES VALUES WA VALUES 720K 830K 910K 1M ST ANDARD TOLERANCE IS 1% FOR ALL KITS. STANDARD

PART NUMBERING SYSTEM: KIT PART NUMBER A WATF-X SERIES 1, 2 3, 4 5, 6 7, 8 9

X RESISTIVE N = Nichrome T = Tantalum Nitride

KIT

X A B C D

= = = =

10 25 50 100

QTY PCS. EA. PCS. EA. PCS. EA. PCS. EA.

VALUE VALUE VALUE VALUE

-A; CONSISTS OF 10 PCS. EACH V EXAMPLE: WATF-4-A-N-KIT ATF-4 STYLE KIT TF-4-A-N-KIT-A; VALUE WA ALUE NICHROME RESISTOR FOR W WEIGHTED KITS AVAILABLE. PLEASE CONSULT SALES. SPECIAL KITS ARE A VAILABLE; MUST HA VE A T LEAST 25 V ALUES; AV HAVE AT VALUES; KITS ARE PACKAGED WITH INDIVIDUAL VALUES IN WAFFLE PACKS. TIONS. PLEASE SPECIFY IF P ARTS ARE REQUIRED WITHOUT SOLDER. WATF KITS HA VE SOLDER TERMINA PARTS HAVE TERMINATIONS.

THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 115-E-0306

JUMPERS, SUBSTRA TES SUBSTRATES & KITS

MINI-SYSTEMS, INC.

THIN FILM CHIP RESISTOR KITS WIRE BONDABLE CHIP RESISTOR KITS KITS ARE COMPRISED OF 80 ST ANDARD RETMA V ALUES (IN OHMS) STANDARD VALUES 10 12 20 18 15 27 42 33 39 50 72 100 83 91 120 180 270 220 200 330 420 720 680 500 830 1.0K 1.8K 1.2K 1.5K 2.0K 2.7K 4.2K 3.3K 3.9K 5.0K 7.2K 10 K 8.3K 9.1K 12 K 18 K 27 K 22 K 20 K 33 K 42 K 72 K 50 K 68 K 83 K 100K 180K 120K 150K 200K 270K 420K 330K 390K 500K 720K 1.0M 830K 1.2M 910K 1.8M* 2 .0 M*

22 68 150 390 910 2.2K 6.8K 15 K 39 K 91 K 220K 680K 1.5M

*NOTE: FOR MSTF-2 KITS, 1.8M Ω, and 2M Ω VALUES ARE NOT AVAILABLE. 1.8MΩ, 2MΩ 5Ω, AND 51 Ω VALUES ARE SUBSTITUTED. 51Ω ST ANDARD TOLERANCE IS 1% FOR ALL KITS. STANDARD

PART NUMBERING SYSTEM: KIT PART NUMBER X MSTF-X SERIES 2 3

SUBSRA TE SUBSRATE S = Silicon

DESCRIPTION X

KIT

RESISTOR N = Nichrome T = Tantalum Nitride

A B C D

= = = =

10 25 50 100

QTY PCS. EA. PCS. EA. PCS. EA. PCS. EA.

VALUE VALUE VALUE VALUE

-A; CONSISTS OF 10 PCS. EACH V EXAMPLE: MSTF-2-S-N-KIT MSTF-2-S-N-KIT-A; VALUE ALUE NICHROME RESISTOR FOR MSTF-2 STYLE KIT SPECIAL KITS ARE A VAILABLE; MUST HA VE A T LEAST 25 V ALUES; AV HAVE AT VALUES; KITS ARE PACKAGED WITH INDIVIDUAL VALUES IN WAFFLE PACKS.

THIN FILM MOS CAPACITOR KITS KITS ARE COMPRISED OF THE FOLLOWING (65 VALUES IN pF):

MSCC-2: 4.7 12 22 39

5.6 13 24 43

6.8 15 27 47

8.2 16 30 51

10 18 33

11 20 36

36 68

39 75

43 82

51 91

56 100

62 110 200

68 120 220

75 130

82 150

91 160

300 510 910 FOR ALL KITS.

330 560 1000

360 620

390 680

MSCC-3: 33 62

MSCC-4: 56 100 180

MSCC-5: 240 270 430 470 750 820 STANDARD ST ANDARD TOLERANCE IS 10% BOND PADS ARE GOLD

JUMPERS, TES SUBSTRATES SUBSTRA & KITS

PART NUMBERING SYSTEM:

MINI-SYSTEMS, INC. THIN FILM DIVISION 20 DA VID ROAD, N. A TTLEBORO, MA 02760 DAVID ATTLEBORO, 508-695-0203 FAX: 508-695-6076 DCN TF 116-E-0306

KIT PART NUMBER KIT MSCC99 SA

DESCRIPTION X

A = 10 PCS. EA. VALUE B = 25 PCS. EA. VALUE C = 50 PCS. EA. VALUE D = 100 PCS. EA. VALUE KITS ARE PACKAGED WITH INDIVIDUAL VALUES IN WAFFLE PACKS.