Dilute Iii-v Nitride Semiconductors And Material Systems
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1. Energetic Beam Synthesis of Dilute Nitrides and Related Alloys.- 2. Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells.- 3. Electronic Band Structure of Highly Mismatched Semiconductor Alloys.- 4. Electronic Structure of GaAs1-xNx under Pressure.- 5. Experimental Studies of GaInNAs Conduction Bandstructure.- 6. Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues.- 7. The effects of Nitrogen Incorporation on Photo-Generated Carrier Dynamics in Dilute Nitrides.- 8. Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells.- 9. Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III-As-N Alloys.- 10. The Hall Mobility in Dilute Nitrides.- 11. Spin Dynamics in Dilute Nitride.- 12. Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs.- 13. Properties and Laser Applications of the GaP-based Ga(NAsP)-Material System for Integration to Si substrates.- 14. Comparison of the Electronic Band Formation and Bandstructure of Ga(N,As) and Ga(N,P).- 15. Doping, Electrical Properties and Solar Cell Application of (GaIn)(NAs).- 16. Elemental Devices and Circuits for Monolithic Optoelectronic Integrated Circuit Fabricated in Dislocation-free Si/III-V-N Alloy Layers Grown on Si Substrate.- 17. Analysis of GaInNAs Based Devices: Lasers and Semiconductor Optical Amplifiers.- 18. Dilute-Nitride Quantum Well Lasers by Metalorganic Chemical Vapour Deposition.- 19. Interdiffused InGaAsSbN Quantum Well on GaAs for 1300-1550 nm Diode
Lasers.- 20. Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides.- 21. Dilute Nitride Photodetector and Modulator Devices. EAN/ISBN : 9783540745297 Publisher(s): Springer, Berlin, Springer, New York Format: ePub/PDF Author(s): Erol, Ayse
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