Rf microwave catalog by Ivan Minin

Power Matters.

RF & Microwave Diode and Transistor Products

Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions (RFIS) business unit RF & microwave diodes and power transistors. RFIS diode products are primarily designed, manufactured, and tested at our Lowell Massachusetts facility and the power transistors are primarily designed, manufactured, and tested at our Santa Clara California facility. For sales and technical assistance consult our website, manufacturerâ&#x20AC;&#x2122;s representative or distributor in your area, or contact the appropriate organization directly:

Diode Products:

Power Transistor Products:

Microsemi Corporation

RF Integrated Solutions

75 Technology Drive

3000 Oakmead Village Drive

Lowell, MA 01851-5293

Santa Clara, CA 95051-0808

+1.978.442.5600

+1.408.986.8031

+1.978.937.3748

+1.408.986.8120

www.microsemi.com email: sales.support@microsemi.com

Table of Contents

Diode Products

Power Transistor Products

Overview: Diode Products

About RF & Microwave Power Transistor Products

26-27

PIN Diodes Selection Guide

GaN & SiC & SiC Wide Band Gap

Power Handling Reference

Pulsed High Power Pallets

GC4200 Series: Small Signal/High Speed Switching

Pulsed Primary Radar

GC4400 Series: Large Signal Switching/Attenuator

Avionics 32-33

GC4700 Series: Limiter PIN Diodes

High Reliability Transistorsb

34-35

GC4800 Series: Planar Beam Lead PINâ&#x20AC;&#x2122;s

HF/VHF/UHF Communications

36-37

GC4900 Series: Mesa Beam Lead PINs

Broadcast / TV

SM Ceramic MELF PINs

Microwave 38

RoHS and MRI Models

General Purpose & Small Signal

30-31

Monolithic Microwave Surface Mount PIN Diodes

Linear Class A & AB

MRI PIN Diode Selector Guide

Bias Devices

Power PIN Diodes for Switching and Attenuation

Transistor Case Styles

Schottky Diodes Selector Guide

Enhanced Performance Surface Mount Products

Varactor Performance Guide

Tuning Varactor Selector Guide

MMSM Varactor Diodes

GaAs Varactor Diodes

Gunn Diodes

Comb Generators

Surface Mount Limiter

Pin Diode Limiter Assemblies

Switch Components

RF, Microwave & mmWave Packages

41-42

23-25

RF & Microwave Diode and Control Components Microsemiâ&#x20AC;&#x2122;s RF diode and control component operations, located in Lowell, Massachusetts, brings over 30 years experience in manufacturing of high reliability RF and microwave products. We supply a full range of Silicon and Gallium Arsenide diodes, including PIN and limiter diodes, tuning and multiplier varactors, noise diodes, Schottky-barrier diodes, MNS chip capacitors and Gunn Diodes. We are able to leverage these best in class products in our solid state control components and sensor products. Our extensive product base allows us to support frequencies from 100 Hz through millimeter wave. With high volume wafer fabrication now in place to meet the competitive needs of our growing commercial and medical customer base, Microsemiâ&#x20AC;&#x2122;s Lowell facility can deliver more cost-effective components faster than ever for our longstanding military customers as well. From our closely controlled RF/microwave diode inventory we can match characteristics precisely to maintain consistent component performance levels over the full life of your system designs. Our Lowell operation builds RF and microwave PIN diode switches, limiters, comb generators, attenuators, phase shifters, and detectors in frequency ranges to 40 GHz. All can be hermetically sealed to meet the most stringent military or space requirements and can be combined to include several functions in a single high reliability package. Typical of these integrated packages are switch/limiters, limiter/detectors, switch matrices and switched filters.. Integrated packages can provide higher performance benefits at lower cost than by designing with individual components. To assure the engineering expertise that will attain your desired performance levels, Microsemi only provides assemblies where we can control the high-risk components. In that way, weâ&#x20AC;&#x2122;re able to develop custom packaging that meets your most demanding specifications.

In addition, we are continuing to develop low cost surface mount PIN and Limiter solutions which offer performance more often associated with expensive chip and wire bonding assemblies. They are available in several reflow friendly configurations which allow the customer new opportunities for economical designs. Microsemi also can offer a significant number of existing configurations to minimize your NRE and provides many customers with microwave components no longer available from their original suppliers. Our extensive library of products and designs gives us the ability to respond quickly with solutions to meet your needs, quickly and cost effectively.

PIN Diodes • Microsemi has a wide variety of GaAs and Silicon PIN diodes to suit your requirements • From ultra-low Cj, Beam Lead PIN diodes for broadband switching to high power PIN diodes • Designed for low frequency, low intermod switching and attenuation

PIN Diode Selection Guide HIGH SPEED MICROWAVE SWITCHING: Chips & Beam Leaded Typical Cj (@Vpt) (pF) 0.01 0.03 0.06 0.1 0.2 0.50 0.75

Max Freq (GHz) 40 24 18 12 8 4 2

40V

50V

MP6250

GC4946

MPP4203

70V/75V

100V

GC4270 GC4271 GC4272 GC4273 GC4275

GC4801 GC4210 GC4211 GC4212 GC4213 GC4215

250V

Outline

MP61001

GaAs Chip Beam Leads / GaAs Flip Chip Chips Chips

GC4220 GC4221 GC4222 GC4223 GC4225

Chips / MMSMTM Chips Chips

HIGH SPEED MICROWAVE SWITCHING: Packaged Typical CT (@Vpt) (pF) 0.02 0.03 0.06 0.1 0.2 0.50 0.75 1.2

Max Freq (GHz) 40 24 18 12 8 4 2 1

25V

40V/50V

70V/75V

100V

200V/250V

Pkg Type

MP61001

Flip Chip GaAs Ceramic GaAs Ceramic / GaAs

MP6250

MPP4203 MPP4204

MP61004 GC4270 GC4210 GC4220 GMP4201 GMP4211 GC4221 GMP4202 GMP4212 GC4222 GC4273 GMP4215 GMP4235 GC4275 GC4215 GC4225

Ceramic / MMSMTM Ceramic / GigaMite Ceramic / GigaMite / EPSM Ceramic / GigaMite / EPSM Ceramic / GigaMite / EPSM

MED - HIGH POWER RF SWITCHING & ATTENUATION: CHIPS

Max Freq (GHz)

Typical Cj (@Vpt) (pF)

18 12 8 4 2 1 0.5

0.1 0.2 0.5 1 2 4.0

100V

300V

GC4410 GC4411 GC4412 GC4413

GC4430 GC4431 GC4432 GC4433

500V

750V

GC4490 GC4491 GC4492 GC4493 GC4494

1500V

Outline

GC4600 GC4601

Chips Chips Chips Chips Chips Chips

MED - HIGH POWER RF SWITCHING & ATTENUATION: Packaged Max Freq (GHz) 12 8 4 2 1 0.5

Typical CT (@Vpt) (pF)

0.2 0.5 1 2 4.0

100V

300V

GC4410 GC4430 GC4411 GC4431 GC4413 GC4433 UM4301

500V

SM0502 SM0509

600V

750V

1000V

1500V

2000V

Pkg Type

GC4490 Ceramic UM6006 GC4491 Ceramic UM6606 GC4493 GC4600 Ceramic/MELF/Leaded/Stud UM4306 UM4310 GC4601 Ceramic/MELF/Leaded/Stud HUM2010 HUM2015 HUM2020 Ceramic/MELF/Leaded/Stud

PIN Diodes PIN Diode Power Handling Typical PIN Diode Power Handling (CW) Frequency Band (GHz) 0.1-0.5

0.5-1.0

0.5-1.0 HUM PIN Family Series UM / HUM PIN Family GC4600 Series Series Typ. Junction 4 pF Capacitance Typ. Junction 4 pF 2 pF Capacitance Incident Power OK Incident Power +60 dBm

1.0-2.0 UM / GC4600 UM / Series GC4600 GC4700 Series 2 pF

0.1-0.5

+60 dBm

+50OK dBm

OK MARGINAL

1 pF

1.0-2.0 2.04.0 Frequency Band (GHz) UM4.0 / GC4400 2.04.0-12 GC4600 GC4200 GC4400 GC4400 GC4700 GC4700 GC4200 GC4200 Series Series GC4700 GC4700 Series Series 1 pF 0.5 pF 0.5 pF

0.2 pF

MARGINAL

OK NO

MARGINAL NO

4.0-12 GC4400 12-18 GC4200 GC4200 GC4700 GC4700 Series GC4900 Series 0.2 pF 0.1 pF

18-40

> 40

GC4200 18-40 GC4700 GC4900 GC4800 / Series GaAs MP Series 0.1 pF

12-18

> 40 GC4800 / GaAs MP Series GaAs MP Series

GaAs MP Series

0.05 pF

< 0.05 pF

0.05 pF

< 0.05 pF

NO NO

+50 dBm

+40OK dBm

OKOK

MARGINAL OK

NO OK

+40 dBm

+30OK dBm

OKOK

OK OK

MARGINAL OK

NO MARGINAL

+30 dBm

+20OK dBm

OKOK

OK OK

+20 dBm

+10OK dBm

OKOK

OK OK

+10 dBm

NO OK

NO NO MARGINAL MARGINAL

OK OK MARGINAL MARGINAL

OK NO

MARGINAL

OK MARGINAL

Packaging for Power Handling Packaging for Power Handling Packaging for Power Handling Package Type Package Type Ceramic MELF MMSM Giga Mite EPSM Stripline Glass Axial Plastic

Lp Ceramic MELF Excellent

Cp Excellent Good Excellent Very Good Fair MMSM Good Very Very Good Giga Mite Good EPSM Good Very Good Good Good Stripline Good Good Fair Glass Axial Good Good Poor Plastic Fair Good Poor Fair

Cp Rs Excellent Fair Excellent

Thermal Performance Rs Cost Thermal Max (θP) Performance Cost Frequency (θP) (GHz) Excellent Excellent High Excellent Very Good Moderate Excellent High 18

Excellent Very Good

Very Good Good

Moderate Good

Good Very Good Good Good Good Good Good Good Fair Good

Good Good Good Very Good Good Good Good Fair Fair Poor

Low Very Good Good Low Fair Moderate Poor Moderate Poor Moderate

Fair

Poor

Low

2Low

Max Comments Hermetic Frequency (GHz) Comments Hermetic Most products available 18 Yes Only select PIN diodes available Yes Most products available Yes2 Yes8

8Low No6 Moderate 6 No6 Moderate 6 No8 Moderate 1.5No 8 Yes or Low 1.5 Yes2 2 No

Only select diodes available select PINs and varactors No PINOnly Only select andselect varactors Only PINs, varactors and Schottkys No PINs Most products available No PINs, Only select varactors and Schottkys Most products available Yesproducts or No available Most Only select PINs, varactors, and Schottkys Yes Most products available Only select PINs, varactors, and Schottkys No PINs, Only select varactors, and Schottkys Only select PINs, varactors, and Schottkys

PIN Diodes GC4200 Series/SmallSignal/High Signal/High Speed Switching GC4200 Series/Small Speed Switching Chip Electrical Specifications: T 25˚C Chip Electrical Specifications:ATA 25°C JUNCTION BREAKDOWN CAPACITANCE VOLTAGE MODEL ¹ VB @ 10uA NUMBER CJ @-10V (MIN)(V) (MAX) (pF) GC4270 GC4271 GC4272 GC4273 GC4274 GC4275 GC4210 GC4211 GC4212 GC4213 GC4214 GC4215 GC4220 GC4221 GC4222 GC4223 GC4224 GC4225

70 70 70 70 70 70 100 100 100 100 100 100 250 250 250 250 250 250

0.06 0.1 0.2 0.3 0.4 0.5 0.06 0.1 0.2 0.3 0.4 0.5 0.06 0.1 0.2 0.3 0.4 0.5

SERIES RESISTENCE² (Rs @20mA, 1 GHz) (MAX) (Ohms)

CARRIER LIFETIME TL (IR=6 mA, IF=10 mA) (Typ) (nS)

THERMAL RESISTANCE (MAX) (˚C/W)

1.5 1 0.8 0.7 0.6 0.5 1.5 1 0.75 0.6 0.5 0.35 2.5 2 1.5 1 0.8 0.6

100 100 100 100 100 100 200 200 200 200 200 200 500 500 500 500 500 500

80 70 70 60 50 40 80 70 70 60 50 40 80 70 70 60 50 40

GC4400 Series/Large Signal Switching/Attenuator Chip Electrical Specifications: TA 25°C

MODEL NUMBER

GC4410 GC4411 GC4412 GC4413 GC4430 GC4431 GC4432 GC4433 GC4490 GC4491 GC4492 GC4493 GC4494 GC4495

CARRIER LIFETIME BREAKDOWN JUNCTION THERMAL SERIES RESISTENCE² TL VOLTAGE CAPACITANCE ¹ RESISTANCE (Rs @100mA, 100 MHz) VB @ 10uA CJ @-50V (IR=6 mA, IF=10 (MAX) (˚C/W) (MAX) (Ohms) (MIN)(V) (MAX) (pF) mA) (Typ) (uS) 100 100 100 100 300 300 300 300 750 750 750 750 750 750

0.1 0.25 0.5 0.75 0.1 0.25 0.5 0.75 0.1 0.25 0.5 0.75 1.3 2.5

0.6 0.5 0.4 0.3 1.5 1.2 1 0.8 1.5 1.2 1 0.8 0.35 0.3

0.4 0.6 0.8 1.2 0.6 1.2 1.5 2 1 2 3 4 5 6

40 25 20 10 40 30 20 10 30 25 20 10 7 5

Notes: 1. Capacitance is measured at 1 MHz and -10 volts. 2. Resistance is measured using transmission loss techniques. 3. These devices are not available in all case styles. Please consult the factory for specific package styles offered

PIN Diodes GC4700 Series/Large Signal Switching/Attenuator Chip Electrical Specifications: TA 25°C BREAKDOWN VOLTAGE MODEL VB @ 10uA NUMBER (MIN)(V) GC4701 GC4702 GC4711 GC4712 GC4713 GC4721 GC4722 GC4723 GC4731 GC4732 GC4741 GC4742 GC4750 3

JUNCTION CAPACITANCE CJ @ 0V (Typ) (pF)

JUNCTION CAPACITANCE CJ @ -6V (Max) (pF)

JUNCTION CAPACITANCE CJ @ -50V (Max) (pF)

SERIES RESISTENCE² (Rs @10mA, 1 GHz) (MAX) (Ohms)

0.2 0.5 0.2 0.5 0.7 0.2 0.6 0.8 0.12 0.2 0.12 0.2

0.15 0.3 0.15 0.3 0.5 0.15 0.3 0.5 0.1 0.15 0.1 0.15

1.5 1.2 1.5 1.2 1 1.5 1 0.5 20 1.5 2 1.5 0.25

1.5 1.2 1.5 1.2 1 1.5 1 0.5 20 1.5 2 1.5 3.0 @50mA

20 20 45 45 45 120 120 120 15 15 30 30 250

CARRIER LIFETIME THERMAL TL RESISTANCE (IR=6 mA, (Typ) (˚C/W) IF=10 mA) (Typ) (uS) 5 20 10 12 10 15 15 10 20 6 50 1.2 50 0.5 100 0.3 5 30 5 20 7 20 7 15 300 4

Notes: 1. Pulse length 1 microsecond. 2. As measure in style 30 package. 3. Supplied as -002 style, dual mesa.

GC4800 Series Planar Beam Lead PINs

GC4800 Series/Planar Beam Lead PINs Electrical Specifications: TA 25˚C Electrical Specifications: TA 25°C MODEL NUMBER

GC4800A – 14 GC4801 – 14 GC4802 – 14 GC4810 - 16

SERIES SERIES BREAKDOWN CAPACITANCE¹ CAPACITANCE¹ RESISTENCE1 RESISTENCE1 VOLTAGE CT @-50V CT @-10V (Rs @20mA) (Rs @50mA) VB @ 10uA (Typ/Max) (pF) (Typ/Max) (pF) (Typ/Max) (Typ/Max) (MIN)(V) (Ohms) (Ohms) 80 80 100 150

0.016 / 0.020 0.020

-0.018 / 0.020 0.060 / 0.070 0.025 / 0.035

4.5 / 6.5 3.5 / 4.0 2.2 / 3.0 3.0 / 4.0

CARRIER LIFETIME TL (IR=6 mA, IF=10 mA) (Typ) (uS) 150 150 150 300

SWITCHING SPEED TS (Max) (nS) 30 30 30 50

Notes:

Notes: 1. RS and CT are determined using Loss and Isolation measurements at F = 2.2 GHz. 1 - RS and CT are determined using Loss and Isolation measurements at F = 2.2 GHz.

GC4900 Series/Mesa Beam Lead PINs GC4900Series MESA Beam Lead PINs Electrical Specifications: TA 25°C DC PERFORMANCE

MODEL NUMBER

BREAKDOWN VOLTAGE VB @ 10uA (MIN)(V)

CAPACITANCE CT @-10V (Typ/Max) (pF)

GC4902 - 12 GC4903 - 12 GC4941 - 12 GC4942 - 12 GC4943 - 12 GC4944 - 12 GC4945 - 12 GC4946 - 12

100 100 50 50 50 50 50 50

0.025 0.030 0.060 0.040 0.030 0.025 0.022 0.020

SERIES RESISTENCE (Rs @10mA, F=2.2GHz) (Max) (Ohms)

1.5 2 3 3.5 5.5 6.5

RF PERFORMANCE TYP

CARRIER SERIES LIFETIME RESISTENCE TL (Rs @50mA, (IR=6 mA, IF=10 F=2.2GHz) mA) (Max) (Ohms) (Typ) (uS) 3 80 2.5 80 50 45 40 35 40 40

Notes: 1. Insertion loss and Isolation are test at F = 2.2 GHz using transmission loss techniques.

Isol (dB) @VR=10V F=2.2 GHZ

IL (dB) IF=10mA F=2.2 GHZ

22 26 27.5 29 30.5 32

0.14 0.17 0.27 0.3 0.45 0.51

PIN Diodes SM SERIES CERAMIC MELF PINS ELECTRICAL SPECIFICATIONS at 25°C VOLTAGE

CASE RATING SM Series Ceramic MELF PINs SM Series Ceramic MELF PINs PART NO. STYLE IR < 10µa Electrical Specifications atSUGGESTED TA = 25˚C Electrical Specifications: TA 25°C VR

PART NUMBER

TOTAL BREAKDOWN M1 500 1 VOLTAGE CAPACITANCE VB @ 10uA CT @ -50V SM0504 M1 500 (MIN)(V) (Max) (pF)

CASESM0502 STYLE SUGGESTED

TOTAL CAPACITANCE F = 1 MHz VR=50V pF (MAX) SERIES 0.50 RESISTENCE² (Rs @100mA) 0.60 (MAX) (Ohms)

SERIES RESISTANCE If=100mA F=100MHz OHM (MAX) SERIES 0.70 RESISTENCE² (Rs @200mA) 0.60 (MAX) (Ohms)

SERIES CARRIER TYPICAL RESISTANCE LIFETIME THERMAL If=200mA If=10mA µSEC RESISTANCE F=100MHz (TYP) °C/W OHM (TYP) TL 0.55 THERMAL 1.0 (IR=6 mA RESISTANCE IF=10 mA) 0.45 (Typ) (˚C/W) 1.5 (Typ) (uS)

SM0508 M1 500 0.90 0.40 M1 500 0.50 0.70 0.55 1.00.25 M1 500 0.60 0.60 0.45 1.50.20 SM0509 M1 500 1.20 0.35 M1 500 0.90 0.40 0.25 2.0 SM0511 M1 500 1.25 0.30 M1 500 1.20 0.35 0.20 2.50.15 M1 500 1.25 0.30 0.15 3.00.12 SM0512 M1 500 1.50 0.25 M1 500 1.50 0.25 0.12 3.5 SM0812 M1 700 1.30 0.40 0.25 M1 700 1.30 0.40 0.25 4.0 M1 700 1.30 0.35 0.20 4.50.20 SM1001 M1 700 1.30 0.35 M1 50 1.20 .75 @ 50mA 0.20 4.0 SM1002 M1 50 1.20 .75 @50mA 0.20 M1 35 1.2 @ 20V .50 @ 10mA 0.10 0.6 SM1003measured M1 35 1.2 @ 20V .50at@F=100 10mA 0.10 Notes: 1. Total Capacitance at F=1 MHz. 2. Series Resistance measured MHz.

SM0502 SM0504 SM0508 SM0509 SM0511 SM0512 SM0812 SM1001 SM1002 SM1003

35 20 15 15 15 15 15 15 15 25

35 20

2.0

2.5

3.0

3.5

4.0

4.5

4.0

0.6

RoHS and MRI Models RoHS and MRI Models RoHS Compliant PN SMX0502 – M1 SMX0504 – M1 SMX0508 – M1 SMX0509 – M1 SMX0511 – M1 SMX0512 – M1 SMX1002 – M1 SMX1003 – M1

Non-Mag. / RoHS PN SMX0502MR – M1 SMX0504MR – M1 SMX0508MR – M1 SMX0509MR – M1 SMX0511MR – M1 SMX0512MR – M1 SMX1002MR – M1 SMX1003MR – M1

M1 + ‘Non Magnetic’ refers to any products that are designed with low and ultra low magnetic materials for use in MRI systems ++ RoHS versions are supplied with a matte tin finish.

DIM

INCHES MIN

MAX

0.080

0.095

0.115

0.135

0.008

0.030

Microsemi

Base Model SM0502 – M1 SM0504 – M1 SM0508 – M1 SM0509 – M1 SM0511 – M1 SM0512 – M1 SM1002 – M1 SM1003 – M1

Monolithic Microwave Monolithic Microwave Surface Mount (MMSM) PIN Diodes This series of surface mount PIN diodes utilize new and unique monolithic MMSM technology. The technology is a package/device integration accomplished at the wafer fabrication level. Since the cathode and anode interconnections utilize precision photolithographic techniques rather than wire bonds, parasitic package inductance is tightly controlled. The package parasitics provide smooth non-resonant functionality through 12GHz. Key Features

Applications Benefits

• Tape and Reeled for Automatic Assembly

• 2.4 GHz PCS communications

• Low Series Inductance (<0.2nH typical)

• 5.7 GHz Wireless LANS

• Low Parasitic Capacitance (0.06 pf typical)

• Solid State Switches, Attenuators, Limiters

• Meets All Commercial Qualification Requirements

• Phase Shifters

• 0204 Outline

• Widest bandwidth of any commercial surface mounted devices

• Low thermal resistance

• Ultra tight parametric distribution

Electrical Specifications: TA 25°C PART NUMBER

TOTAL BREAKDOWN SERIES SERIES SERIES VOLTAGE CAPACITANCE1 RESISTENCE² RESISTENCE² RESISTENCE² OUTLINE VB @ 10uA (Rs @0.01mA) (Rs @1mA) (Rs @10mA) CT @ -10V (Typ) (Ohms) (Ohms) (Max) (Ohms) (Min)(V) (Max) (pF)

MPP4201 MPP4202 MPP4203 MPP4204 MPP4205 MPP4206 MPL4700 MPL4701

206 206 206 206 206 206 206 206

70 50 50 25 70 200 25 15

MPL4702

406

50B

0.2 0.15 0.1 0.15 0.15 0.15 0.15

Notes: 1. Total Capacitance measured at F=1 MHz. 2. Series Resistance measured at F=100 MHz.

250

7-16 5 (Typ) 2

TL (IR=6 mA IF=10 mA) (Typ) (nS)

APPLICATION

2.0 2.5A

150 50 50 20 150 500 20 10

Attenuator MRI High Isolation Switch High Speed Switch Attenuator Attenuator/Switch Receiver Protection Receiver Protection

Anti-parallel Pair MRI Surface Coil Detune

2 5 2.5 A

MRI Applications Matrix MRI - APPLICATIONS MATRIX FOR RF PIN DIODES MRI - APPLICATIONS MATRIX FOR RF PIN DIODES VOLUME / BIRD CAGE COILS – Switching Diodes Volume/Bird Cage Coils—Switching Diodes VOLUME / BIRD CAGE COILS – Switching Diodes (End ring resonant / anti-resonant Switching Diodes) (End ring resonant / anti-resonant Switching Diodes)

(End ring resonant/anti-resonant Switching Diodes) Model #

VBR

Model # HUM2015 HUM2015 HUM2020 HUM2020

VBR 1500 1500 2000 2000

CT(pF) CT(pF) 3.5

Wi (um) Wi275 (um)

3.5 3.5

275 275

τ(µs) Rs(Ω)1 @IF(mA) τ(µs) 20 Rs(Ω) 0.1 1 @IF(mA) 500

20 20

0.1 0.1

500 500

Application Application Switching Switching Switching

SURFACE COILS – RECEIVE ARRAY PIN Diodes (LOOP ARRAY OR–STRIP ARRAY – 4 CHANNELS SURFACE COILS RECEIVE ARRAY PIN Diodes AND NX4 CHANNELS) Surface Coil—Receive Array PIN Diodes (LOOP ARRAY OR STRIP ARRAY – 4 CHANNELS AND NX4 CHANNELS)

(Loop Array or Strip Array 4 Channels and NX4 Channels) 1 Model # Model #

UMX5601 UMX5601 UM7201 UM7201 UM9701 UM9701 UM9995 UM9995 UMX5101 UMX5101

UM9989AP3 UM9989AP3 MPL4702 3 MPL4702 3

VBR VBR

100 100 100 100 100 100 100 100 100 75 75 50 50

CT(pF) CT(pF)

2.5 2.5 2.2 2.2 1.8 1.8 1.2 1.2 1.2 1.2

1.2 1.2 1.2 1.2

2 2 2 2

Wi (um) Wi (um)

175 175 50 50 50 100 100 125 125 -----

τ(µs) Rs(Ω) @IF(mA) τ(µs) Rs(Ω)1 @IF(mA)

5 5 1.5 1.5 1.5 2 2

0.75 0.75 0.25 0.25 0.8 0.8 0.6 0.6

50 50 100 100 10 10 100 100

2.5 2.5 0.004 0.004 0.03 0.03

0.8 0.8 2 2 2 2

50 50 100 100 10 10

Application Application ULTRA-Low Magnetic Receive Array ULTRA-Low Magnetic Receive Array Receive Array

Receive Array Receive Array ULTRA-Low Magnetic Recieve Array ULTRA-Low Magnetic Recieve Array ULTRA-Low Magnetic Recieve Array ULTRA-Low Magnetic Recieve Array Low Magnetic Recieve Array Low Magnetic Low Magnetic Recieve Array Recieve Array Low Magnetic Recieve Array

TRANSMIT / RECEIVE Control Boards

Transmit/Receiver Control Boards Model #

VBR

CT(pF)

Wi (um)

UM4001 UM4301 UM7301 SMX0512MR UM7101 UM6201 UM9415

100 100 100 500 100 100 50

3 2.2 0.7 1.5 1.2 1.1 3

175 325 325 50 100 50 175

τ(µs) Rs(Ω)1 @IF(mA)

5 6 4 3.5 2 0.6 5

0.25 1.5 3 0.35 0.6 0.4 0.75

500 100 100 100 100 100 50

T/R T/R T/R T/R T/R T/R T/R

Application Control Control Control Control Control Control Control

RECEIVER Protection Circuits

Receiver Protection Circuits Model #

VBR

CT(pF)

Wi (um)

UM9989 UM1089 UM7201 SMX0509MR MPP4204 MPL4702 3 UM9415

75 75 100 500 25 50 50

1.2 1.5 2.2 1.2 0.15 1.22 3

--50 50 --175

Notes:

τ(µs) Rs(Ω)1 @IF(mA)

0.006 0.015 1.5 2.5 0.02 0.03 5

2 0.8 0.25 0.2 2 2 0.75

Notes: 1) Series Resistance (RS) is measured at 100MHz. 1. Series Resistance (RS) is measured at 100MHz. 2) Nominal Ct per Diode. 2. Nominal Ct per Diode. 3) Antiparallel Pairs 3. Anti-parallel Pairs

100 100 100 200 10 10 50

Application Receiver Protection Receiver Protection Receiver Protection Receiver Protection Receiver Protection Receiver Protection Receiver Protection

Power PIN Diodes POWER PIN Forfor Switching and Attenuation Power PINDIODES Diodes Switching and Attenuation

Featuring fast swithing products through High Power / Low IM products for TR switching contol

Featuring fast switching products through High Power / Low IM products for TR switching contol

Category

FAST TURN ON RECIEVER PROTECTION ANTI PARALLEL CONFIGURATION FAST TURN ON RECIEVER PROTECTION

Category SURFACE MOUNT SWITCHING DIODE POWER PIN DIODES

CT@100V CT@50V (Typ) (Typ) (pF) (pF)

CT@0V (Typ) (pF)

CT@50V (Typ) (pF) 0.75

Rp CT@100 Rp @0V @100V V (Min) (Min) (Max) (kOhms) (pF) (kOhms) 5

0.4

300

Rs@100 mA (Typ) (Ohms) 0.5

2.2

TL (Typ) (uS)

Yes

RoHS Low Mag Available

RoHS Low Mag Available Yes

Yes

Vb (Min) (V)

UM9989

100 200 600 1000

UM6601 UM6602 UM6606 UM6610

Schottky Diodes Schottky Mixer Diodes • Monolithic design for lowest parasitics

• Can be supplied as monolithic or as packaged device

• Low Conversion Loss

• Singe, T & Quad configurations available

• Suitable for applications to 26.5 GHz

• RoHS Compliant

• Excellent Noise Figure

Freq. Range

PART NUMBER

Barrier

TOTAL BREAKDOWN FORWARD CAPACITANCE VOLTAGE VOLTAGE CT @ 0V VB @ 10uA VF @ 1mA (Max) (mV) (Min)(V) (Max) (pF)

Ku-Ka GC9901 X GC9902 ULTRA-LOW 2 C GC9903 S GC9904 Ku-Ka GC9911 X GC9912 LOW 2 C GC9913 S GC9914 Ku-Ka GC9921 X GC9922 LOW-MED 2 C GC9923 S GC9924 Ku-Ka GC9931 X GC9932 MEDIUM 3 C GC9933 Electrical Specifications at TA = 25˚C S GC9934 Ku-Ka GC9941 X GC9942 JUNCTION HIGH Rs4 2 C GC9943 CAPACITANCE PART NUMBER (Max) S GC9944 CJ @ 0V

(Typ) (pF) MS8001

(Ohms)

0.12

GaAs Schottky Barrier Diodes MS8002 Electrical Specifications0.1 at TA = 25˚C 6 MS8003 0.07 TA 25°C Electrical Specifications: MS8004

0.06 JUNCTION CAPACITANCE PART NUMBER CJ @ 0V Flip Chip GaAs Schottky (Typ)Diodes (pF) MS8001 MS8002 MS8003 MS8004

6 6 Rs 2 (Max) (Ohms)

0.12 0.1 0.07 0.06

6 6 6 6

Rd @ IF = 5mA (Max) (Ohms)

NF ssbs Typ (dB)

0.10 0.15 0.3 0.5 0.10 0.15 0.3 0.5 0.10 0.15 0.3 0.5 0.10 0.15 0.3 0.5 0.10 0.15 Typical 0.3 NF ssbs 4 LO Freq 0.5(Typ) (dB)

310 280 270 250 360 350 340 330 440 430 410 390 540 530 520 500 650 630 620Zif (Typ) 600

(Ohms)

(Min)(V)

9.375 5.6 16 5.6 24 6.5 36 6.5 Typical NF ssbs 4 LO Freq (Typ) (dB) (GHz)

250–500 250–500 250–500 250–500 Zif (Typ) (Ohms)

5 5 5 5 VB @ 10uA (Min)(V)

5.6 5.6 6.5 6.5

250–500 250–500 250–500 250–500

5 5 5 5

Delta VF (mV)

VB @ 10uA (Min)(V)

(GHz)

9.375 16 24 36

18 14 12 10 18 14 12 10 18 14 12 10 18 14 12 10 20 16 V @ 12 B 10uA 10

6.5 6 5.5 5.5 6.5 6 5.5 5.5 6.5 6 5.5 5.5 6.75 6.25 5.75 5.5 7 6.25 5.75 5.75

Zif (Typ) (Ohms)

140

170

200

250

300

Flip Chip GaAs Schottky Barrier Diodes Flip Chip GaAs Schottky Diodes Electrical Specifications at TA = 25˚C

Electrical Specifications: TA 25°C

Rs @10mA (Max) (Ohms)

VF @10mA (mV)

MS8150-P2613 0.08 7 MS8151-P2613 0.06 9 Electrical Specifications at TA = 25˚C MS8250 - P2920 0.08 7 MS8251 - P2920 0.06 9 Rs CAPACITANCE @10mA CJ @ 0V PART NUMBER (Max) (Max) (pF) (Ohms)

650 - 750 600 - 800 650 - 750 600 - 800 VF @10mA (mV)

PART NUMBER

MS8150-P2613 MS8151-P2613 MS8250 - P2920 MS8251 - P2920

CAPACITANCE CJ @ 0V (Max) (pF)

0.08 0.06 0.08 0.06

7 9 7 9

650 - 750 600 - 800 650 - 750 600 - 800

na na 10 10 Delta VF (mV) na na 10 10

Description

3 3 3 3 VB @ 10uA (Min)(V)

Low Rs Flip Chip - Single Low Ct Flip Chip - Single Low Rs Flip Chip - Antiparallel Low Ct Flip Chip - Antiparallel

3 3 3 3

Low Rs Flip Chip - Single Low Ct Flip Chip - Single Low Rs Flip Chip - Antiparallel Low Ct Flip Chip - Antiparallel

Description

Enhanced Performance Surface Mount EPSM PIN Diodes

EPSM PIN Diodes EPSM PIN&Diodes for Attenuation for Switching Switching & Attenuation

For Switching and Attenuation PART PART NUMBER NUMBER LSP1000 LSP1000 LSP1002 LSP1002 LSP1004 LSP1004 LSP1011 LSP1011 LSP1012 LSP1012

T TLL (I (IRR=6 =6 mA mA mA) IIF=10 F=10 mA) (Typ) (Typ) (nS) (nS)

Application Application

80 nS nS 80 1500 1500 nS nS 150 150 nS nS 2000 nS nS 2000 5 5 nS nS

Switch Switch Attenuator Attenuator Switch Switch Attenuator Attenuator Limiter Limiter

TOTAL TOTAL CAPACITANCE CAPACITANCE CT @ -4V C T @ -4V (Max) (Max) (pF) (pF)

TOTAL TOTAL CAPACITANCE CAPACITANCE C CTT @ @ -8V -8V (Max) (Max) (pF) (pF)

Q (4V/50MHz) (4V/50MHz) Q min min

12 12 9 9 6 6 4.5 4.5 3 3 1.5 1.5 0.8 0.8 0.6 0.6 0.4 0.4

6.20 6.20 4.7 4.7 3.2 3.2 2.7 2.7 1.7 1.7 1 1 0.55 0.55 0.45 0.45 0.35 0.35

400 400 500 500 600 600 750 750 900 900 1200 1200 1400 1400 1600 1600 1800 1800

BREAKDOWN TOTAL BREAKDOWN TOTAL Rs Rs VOLTAGE CAPACITANCE VOLTAGE CAPACITANCE @ IIF @ F V @ 10uA C @ V B T R VB @ 10uA CT @ VR (Max) (Max) (Ohms) (Ohms) (Max) (Min)(V) (Max) (pF) (pF) (Min)(V) 35 0.28 @ @ 5V 5V 2.5 @ @ 5mA 5mA 35 0.28 2.5 100 0.32 4.0 100 0.32 @ @ 50V 50V 4.0 @ @ 100mA 100mA 35 0.75 0.6 35 0.75 @ @ 20V 20V 0.6 @ @ 10mA 10mA 200 0.35 @ @ 50V 50V 2.0 @ @ 100mA 100mA 200 0.35 2.0 20 0.35 1.8 20 0.35 @ @ 10V 10V 1.8 Ohms Ohms @ @ 10mA 10mA

EPSM Hyperabrupt 12V EPSM Super Hyperabrupt 12V EPSM Super Super Hyperabrupt 12V Varactors for Low Voltage VCOs

Varactors forfor Low Voltage VCOs VCOs Varactors Low Voltage

PART PART NUMBER NUMBER

KV1913A KV1913A KV1953A KV1953A KV1923A KV1923A KV1933A KV1933A KV1943A KV1943A KV1963A KV1963A KV1973A KV1973A KV1983A KV1983A KV1993A KV1993A

TOTAL TOTAL TOTAL TOTAL CAPACITANCE CAPACITANCE CAPACITANCE CAPACITANCE CT @ @ -2.5V -2.5V C T CT @ -1.0V C T @ -1.0V (Min (Min -- Max) Max) (Min) (pF) (Min) (pF) (pF) (pF) 36 18 36 pF pF 18 -- 27 27 26 13 26 pF pF 13 -- 20 20 17 8.5 17 pF pF 8.5 -- 13 13 13 pF pF 6.5 -- 10 10 13 6.5 9 4.5 9 pF pF 4.5 -- 6.5 6.5 4 2.0 4 pF pF 2.0 -- 3.0 3.0 1.8 1.1 1.8 pF pF 1.1 -- 1.5 1.5 1.2 0.8 1.2 pF pF 0.8 -- 1.1 1.1 0.6 pF pF 0.5 -- 0.8 0.8 0.6 0.5

Microwave Hyperabrupt 22V Varactors Microwave Hyperabrupt 22V Varactors for Wide Bandwidth VCOs for Wide Bandwidth VCOs

PART NUMBER

TOTAL CAPACITANCE CTT @0V (Typ) (pF)

KV2163 KV2153 KV2143 KV2133 KV2123 KV2113

26 pF 13.5 pF 7 pF 5 pF 3 pF 2 pF

TOTAL CAPACITANCE CTT @ -4.0V (Min - Max) (pF) 8.75 - 10.80 4.45 - 5.50 2.65 - 3.30 1.75 - 2.20 1.30 - 1.65 0.85 - 1.10

TOTAL CAPACITANCE CTT @ -20V (Max) (pF)

Q (4V/50M Hz) min

2.5 1.3 0.9 0.7 0.55 0.45

400 600 700 850 1000 1200

Microwave Abrupt 30V Varactors Microwave Abrupt 30Vfor Varactors Moderate Bandwidth, Low Noise VCOs

for Moderate Bandwidth, Low Noise VCOs

PART NUMBER

CT0/CT4 (min)

TOTAL CAPACITANCE CTT @ -4.0V (+ / - 10%) (pF)

CT4/CT30 (min)

Q (4V/50M Hz) min

GC1300 GC1301 GC1302 GC1303 GC1304 GC1305 GC1306 GC1307 GC1308 GC1309 GC1310

1.5 1.6 1.7 1.8 1.9 2 2 2.1 2.1 2.1 2.1

0.8 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6

1.45 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.85 1.85 1.85

3900 3800 3700 3600 3500 3400 3300 3100 2700 2600 2500

Tuning Varactors Varactor Category Performance Guide Category Abrupt GaAs

Abrupt Silicon

Hyperabrupt GaAs

Hyperabrupt Silicon

Low "S" Linear FLTVARS High "S" Linear FLTVARS

Silicon Super Hyperabrupts

Model Number or Family MV20000 MV21000 GC1200; GC1300; GC1500; 1N5400 GC1600; 1N5400 GC1700; 1N5100 MV34000; MV30000; MV31000 MV32000 KV2100; MPV2100 GMV2100 KV2101 KV2201 KV2301 KV2401 KV2501 KV2601 KV2701 KV2801 KV3201; KV31S1 KV3901; KV38S2

Max Voltage

Typical Ratio

15V 30V

3:1 4:1

30V

4:1

45V 60V 15V

5:1 6:1 6:1

30V

11:1

Mod Sens Linearity

Relative Q or VCO Phase Noise

Poor; Exponential

Best

Good (Mid-Range)

Good - Excellent

22V

11:1

30V

11:1

Good (Mid Range)

Very Good

GC15000

22V

6:1

Excellent

GC15000

22V

11:1

Excellent

12V

3:1

Good (Mid-Range)

Very Good

12V

4:1

Good (Mid-Range)

Very Good

12V

6:1

KV1905A KV1925A KV1935A KV1945A KV1965A; MPV1965 KV1975A KV1911A-KV1991A KV1912A-KV1932A KV1913A-KV1993A KV1400 KV1500 KV1600 KV1700 KV1800

Good

Very Good

(Mid-Range)

12V

13:1

Good (Mid-Range)

Good

Tuning Varactors Varactor Diode Selector Guide Material

Silicon

GaAs

Freq. Band

Super Hyper Vb=12V P/N Series

High "S" Linear Vb=22V P/N

Low "S" Linear Vb=22V P/N

Hyper Vb=22V P/N Series

Abrupt Vb=30V Chip Ceramic Glass*

Abrupt Vb=30V EPSM

Abrupt Vb=30V SOT-23

Hyper Chips** VB=22V Low Gamma

Hyper Chips** VB=22V Medium Gamma

Hyper Chips** VB=22V High Gamma

MV32001 MV32002 MV32003 MV32004 MV32005 MV32006 MV32007 MV32008 MV32009 MV32010

MV30011 MV30012 MV30013 MV30014 MV30015 MV30016 MV30017 MV30018 MV30019 MV30020

MV31011 MV31012 MV31013 MV31014 MV31015 MV31016 MV31017 MV31018 MV31019 MV31020 MV31021

Microwave to 40 GHz

Microwave to 18 GHz

KV199x KV198x KV197x KV196x KV194x KV193x

GC15006 GC15007 GC15008 GC15009 GC15010 GMV5007

GC15001 GC15002 GC15003 GC15004 GC15005

UHF to 1.0 GHz

KV192x KV195x KV191x

GC15011 GC15012 GC15013

GC15014 GC15015 GC15016

VHF to 250 MHz

KV1401 KV1501

N/A

HF 1 - 50 MHz

KV1601 KV1701 KV1801

N/A

MPV2100 KV211x KV212x KV213x KV214x KV215x KV216x GMV2114 GMV2134 GMV2154

KV2101 KV3201 KV3901 KV2801 KV2001 KV2201 KV2301 KV2401 KV2501 KV2601 KV2701

GC1500A GC1500B GC1500 GC1501 GC1502 GC1503 GC1504 GC1505 GC1506 GC1507 GMV1542 GC1508 GC1509 GC1510 GC1511 GC1512 GC1513 1N5441 1N5476 thru

N/A

GC1300 GC1301 GC1302 GC1303 GC1304 GC1305 GC1306 GC1307 GC1308 GC1309 GC1310

N/A

MV31022 MV31023 GC1202 GC1203 GC1204 GC1205 GC1206 GC1207 GC1208 GC1209 GC1210 GC1211 GC1212 GC1213 GC1214 GC1215 GC1216 GC1217

N/A

MV31024 MV31025 MV31026

GaAs

Hyper Hyper Flip Chips** Chip VB=15V Vb=18V Very High Medium Gamma Gamma

Abrupt Chips** Vb=15V

Abrupt Chips** Vb=30V

MV34001 MV34002 MV34003 MV34004 MV34005 MV34006 MV34007 MV34008 MV34009 MV34010

MV20001 MV20002 MV20003 MV20004 MV20005 MV20006 MV20007 MV20008 MV20009 MV20010

MV21001 MV21002 MV21003 MV21004 MV21005 MV20116 MV21007 MV21008 MV21009 MV21010

MV39001 MV39002 MV39003

MMSM Varactor Diodes Monolithic Microwave Surface Mount (MMSM) Varactor Diodes This series of surface mount PIN diodes utilize new and unique monolithic MMSM technology. The technology is a package/device integration accomplished at the wafer fabrication level. Since the cathode and anode interconnections utilize precision photolithographic techniques rather than wire bonds, parasitic package inductance is tightly controlled. The package parasitics provide smooth non-resonant functionality through 12GHz. Key Features:

Applications/Benefits

• • • • •

• 2.4 GHz PCS • 5.7 GHz Wireless LANS • VCO’s (Voltage Controlled Oscillator) • Tunable Filter • Widest bandwidth of any commercial surface mounted devices • Ultra tight parametric distribution

Tape and Reeled for Automatic Assembly Low Series Inductance (<0.2nH typical) Low Parasitic Capacitance (0.06 pf typical) Meets All Commercial Qualification Requirements 0204 Outline

Electrical Specifications at TA = 25˚C

Electrical Specifications: TA 25°C PART NUMBER

MPV1965

PART NUMBER

MPV2100

TOTAL CAPACITANCE Vb@10uA CT @ -1.0V (Min) (V) (Min - Max) (pF) 15

2.6-3.8

RATIO CT 1V/CT 3V

RATIO CT 1V/CT 6V

Q (4V/50MHz) (Min)

Outline Dwg Number

Application

1.4-2.2

2.6-3.6

1500

206

Low Voltage VCO

Outline Dwg Number

Application

206

Wide Bandwidth VCO

TOTAL TOTAL TOTAL CAPACITANCE Q CAPACITANCE Vb@10uA CAPACITANCE CT @ -4.0V (4V/50MHz) CT @ 0V CT @ -20V (Min) (V) (Min) (Min - Max) (Typ) (pF) (Min - Max) (pF) (pF) 22

3.25

0.9-1.5

0.2-0.5

1500

GaAs Varactor Diodes Microsemi’s GaAs varactors are available as Abrupt Junction and Hyperabrupt Junction. Our computer controlled epitaxy provide the optimal C-V characteristics for your application. GaAs varactors feature extremely high Q and lowest phase noise for critical applications/ Electrical Specifications: TA 25°C 15 Volt Abrupt Junction Varactors, Gamma = 0.6 TOTAL Vb@10 RATIO CAPACITANCE uA Q (4V/50MHz) CT 0V/CT PART NUMBER CT @ -4.0V (Min) (Min) VBR (V) (+ /- 10%) (pF)

MV20001 MV20002 MV20003 MV20004 MV20005 MV20006 MV20007 MV20008 MV20009 MV20010

0.3 0.4 0.5 0.6 0.8 1 1.2 1.5 1.8 2.2

2.4 2.6 2.8 2.9 3 3.1 3.2 3.3 3.4 3.4

15 15 15 15 15 15 15 15 15 15

8000 7500 7000 6500 6000 5700 5000 5000 5000 4000

30 Volt Abrupt Junction Varactors, Gamma = 0.6 PART NUMBER

MV21001 MV21002 MV21003 MV21004 MV21005 MV21006 MV21007 MV21008 MV21009 MV21010

RATIO Vb@10 TOTAL CT CAPACITANCE uA 0V/CT CT @ -4.0V (Min) (V) VBR (+ /- 10%) (pF)

0.3 0.4 0.5 0.6 0.8 1 1.2 1.5 1.8 2.2

2.8 3.1 3.4 3.6 3.8 4 4.2 4.3 4.5 4.6

30 30 30 30 30 30 30 30 30 30

Q (4V/50MHz) (Min)

8000 7500 7000 6500 6000 5700 5000 5000 5000 4000

Electrical Specifications: Electrical Specifications at TTAA=25°C 25˚C 15 Volt Hyperabrupt Varactors - Gamma = 1.00 TOTAL Vb@10 RATIO CAPACITANCE uA Q (4V/50MHz) CT 2V/CT PART NUMBER CT @ -4.0V (Min) (Min) 12V (V) (+ /- 10%) (pF)

MV30001 MV30002 MV30003 MV30004 MV30005 MV30006 MV30007 MV30008 MV30009 MV30010

0.6 1 1.2 1.5 1.8 2.2 2.5 3 3.6 4.5

2.5 3.1 3.2 3.4 3.5 3.6 3.7 3.8 3.8 3.9

15 15 15 15 15 15 15 15 15 15

4000 3000 3000 3000 3000 3000 2500 2500 2000 1500

22 Volt Hyperabrupt Varactors - Gamma = 1.00 PART NUMBER

MV30011 MV30012 MV30013 MV30014 MV30015 MV30016 MV30017 MV30018 MV30019 MV30020

RATIO Vb@10 TOTAL CT CAPACITANCE uA CT @ -4.0V (Min) 2V/CT (V) (+ /- 10%) (pF) 12V

0.6 1 1.2 1.5 1.8 2.2 2.5 3 3.6 4.5

3.1 4.1 4.3 4.8 5 5.3 5.5 5.7 5.9 6.1

22 22 22 22 22 22 22 22 22 22

Q (4V/50MHz) (Min)

4000 3000 3000 3000 3000 3000 2500 2500 2000 1500

Electrical Specifications: TA 25°C 15 Volt Hyperabrupt Varactors - Gamma = 1.25 TOTAL Vb@10 RATIO CAPACITANCE uA Q (4V/50MHz) CT 2V/CT PART NUMBER CT @ -4.0V (Min) (Min) 12V (V) (+ /- 10%) (pF)

MV31001 MV31002 MV31003 MV31004 MV31005 MV31006 MV31007 MV31008 MV31009 MV31010

0.6 1 1.2 1.5 1.8 2.2 2.5 3 3.6 4.5

3 3.7 3.9 4.2 4.4 4.6 4.7 4.8 4.9 5

15 15 15 15 15 15 15 15 15 15

4000 3000 3000 3000 3000 3000 2000 2000 2000 1500

22 Volt Hyperabrupt Varactors - Gamma = 1.25 PART NUMBER

MV31011 MV31012 MV31013 MV31014 MV31015 MV31016 MV31017 MV31018 MV31019 MV31020

RATIO Vb@10 TOTAL CT CAPACITANCE uA CT @ -4.0V (Min) 2V/CT (V) (+ /- 10%) (pF) 12V

0.5 0.7 1 1.2 1.5 1.8 2 2.2 2.7 3.3

3.2 4 5 5.4 6 6.4 6.6 6.8 7.2 7.6

22 22 22 22 22 22 22 22 22 22

Q (4V/50MHz) (Min)

4000 4000 3000 3000 3000 3000 3000 3000 2000 2000

Additional Gamma and Capacitance values are available. Consult the factory or www.microsemi.com.

Gunn Diodes MG1001 - MG1060 Cathode Heat Sink

• • • •

5.9-95GHz, CW designs to 500mW and pulsed designs to 10W High reliability, low phase noise, and low 1/f noise Transmitters and receivers, beacons, radars, radiometers, and instrumentation Motion detectors and automotive collision avoidance Discrete Frequency: Cathode Ground (CW EPI-Down)

Minimum Power (mW)

C (5.4-6.9) GHz

X (8.0-12.4) GHz

Ku (12.4-18.0) GHz

K (18.0-26.5) GHz

Ka (18-26.5) GHz

U (40.0-60.0) GHz

V (60.5-85) GHz MG1036-M16 VOP = 4.5V @ IOP = 900mA

W (85.0-95.0) GHz MG1024-M16 VOP = 4.5V @ IOP = 1100mA MG1025-16 VOP = 4.5V @ IOP = 1000mA

MG1001-M11 VOP = 12V @ IOP = 400mA

MG1005-M11 VOP = 10V @ IOP = 400mA

MG1009-M11 VOP = 8V @ IOP = 500mA

MG1013-M16/83B VOP = 6V @ IOP = 600mA

MG1017-M16 VOP = 4.5V @ IOP = 700mA

MG1021-M16 VOP = 4V @ IOP = 800mA

100

MG1002-M11 VOP = 12V @ IOP = 600mA

MG1006-M11 VOP = 10V @ IOP = 700mA

MG1010-M11 VOP = 8V @ IOP = 800mA

MG1014-M16/83B VOP = 6V @ IOP = 1000mA

MG1018-M16 VOP = 4.5V @ IOP = 1100mA

MG1022-M16 VOP = 4V @ IOP = 1200mA

MG1037-M16 VOP = 5V @ IOP = 1100mA

MG1038-M16 VOP = 5V @ IOP = 1200mA

MG1023-M16 VOP = 4V @ IOP = 1600mA

150

(40-50 GHz) MG1015-M16/83B VOP = 6V @ IOP = 1400mA

200

250

MG1003-42 VOP = 12V @ IOP = 1100mA

MG1007-42 VOP = 10V @ IOP = 1200mA

MG1011-42 VOP = 8V @ IOP = 1200mA

MG1019-M16 VOP = 5V @ IOP = 1400mA MG1020-M16 VOP = 5.5V @ IOP = 1600mA MG1039-M16 VOP = 5.5V @ IOP = 1700mA

300

(26.5-35 GHz) MG1040-M16 VOP = 5.5V @ IOP = 1800mA

350

(26.5-35 GHz) MG1016-83B VOP = 6V @ IOP = 1700mA

400

(18.0-23 GHz) 500

MG1004-42 VOP = 12V @ IOP = 1300mA

MG1008-42 VOP = 10V @ IOP = 1600mA

5W Pulsed High Power (9.3GHz)

MG1034-42 VOP = 35V @ IOP = 8A

10W Pulsed Stacked (9.3GHz)

MG1060-42 VOP = 70V @ IOP = 6A

MG1012-42 VOP = 8V @ IOP = 1700mA

Polarity: Anode is the cap and Cathode is the heat-sink

MG1041-MG1058 Anode Heat Sink

• • • •

9.5-25Ghz, pulsed and CW designs to 30mW High reliability, ultra low phase noise, and low 1/f noise Transmitters and receivers, beacons, radars, radiometers, and instrumentation Motion detectors and automotive collision avoidance

Discrete Discrete Frequency: Frequency: Anode Anode Ground Ground (CW (CW EPI-Up) EPI-Up) Minimum Minimum 5 5

X X

10 10

MG1052-30 MG1052-30 VOPV= = 8V @ @ OP8V IOP I= = 140mA OP140mA MG1056-30 MG1056-30 VOPV= = 8V @ @ OP8V IOP I= = 200mA OP200mA

20 20

K K MG1054-30 MG1054-30 VOPV= = 5V @ @ OP5V IOP I= = 200mA OP200mA MG1058-30 MG1058-30 VOPV= = 5V @ @ OP5V IOP I= = 300mA OP300mA

Polarity: Polarity: cathode cathode is the is the cap cap andand anode anode is the is the heat-sink heat-sink

Discrete Discrete Frequency: Frequency: Anode Anode Ground Ground (Pulsed (Pulsed EPI-Up) EPI-Up) Minimum Minimum 5 5

X X

10 10

MG1041-30 MG1041-30 VOPV= = 9V @ @ OP9V IOP I= = 110mA OP110mA MG1042-30 MG1042-30 VOPV= = 9V @ @ OP9V IOP I= = 140mA OP140mA MG1043-30 MG1043-30 = 10V @ @ VOPV= OP10V = 180mA IOP I= OP180mA

20 20

30 30

K K MG1044-130 MG1044-130 VOPV= = 8V @ @ OP8V IOP I= = 120mA OP120mA MG1045-30 MG1045-30 VOPV= = 8V @ @ OP8V IOP I= = 150mA OP150mA MG1046-30 MG1046-30 VOPV= = 8V @ @ OP8V IOP I= = 200mA OP200mA

Operation Operation overover a narrow a narrow band band around around a specific a specific center center frequency. frequency.

Polarity: Polarity: cathode cathode is the is the cap cap andand anode anode is the is the heat-sink heat-sink

Other frequencies available upon request. CallCall factory. Other frequencies available upon request. factory.

Pulse width = 1= usec, Duty factor = 1% typ.typ. Pulse width 1 usec, Duty factor = 1%

Operating Operating voltage voltage (VOP(V ) typ. Operating Operating current current (IOP)(Imax. OP) typ. OP) max.

Alternative Alternative pulse pulse width width andand dutyduty factors factors can can be specified be specified by customer by customer

Note: Operation over a narrow band around a specific center frequency. Other frequencies available upon request. Call factory. Operating voltage (VOP) typ. Operating current (IOP) max. Power measured with diode inserted in critically coupled cavity. Specifications @ 25°C.Specifications subject to change without notice.

Comb Generators Input Model Number Module Coaxial GG770140-01 GG770340-01 GG770140-02 GG770340-02 GG770140-03 GG770340-03 GG770140-04 GG770340-04 GG770140-05 GG770340-05 GG770140-06 GG770340-06 GG770140-07 GG770340-07

Frequency (MHz) 100 200 250 500 1000 1500 2000

Output level Up to 4.0 (GHz) -10 -5 -5 0 5 5 5

4.0 to 8.0 (GHz) -20 -20 -15 -10 -5 0 0

8.0 to 12.0 (GHz) -20 -20 -15 -10 -5

12.0 to 18.0 (GHz) -15 -10 -10

Notes: 1. Minimum output power per line (dBm) 2. All specifications apply at 25°C with 0.5W incident RF power in a 50 ohm system (both source & load) 3. Performance above 12.0GHz is typical performance only. 4. Modular units require an external DC return at the output. Internal or RF decoupled DC returns are available on special order. 5. VSWR is specified at 2.0:1 max (for all model numbers). 6. Modular package style is 210003; Coaxial package style is 210020

Surface Mount Limiter

Model GG77015-01

Freq Range (MHz) 10 – 3000

INSERTION

CW Power PCW (W) 4

Peak Power1 PP(W) 20

Ins. Loss2 IL(dB) Typ. 0.5

VSWR2 Typ. 1.5:1

Flat Leakage3 (dBm) Typ. 1.01.51.85<= 1GHz 1.5GHz 1.85GHz 3.5GHz 15 18 20 23

FLAT LEAKAGE

INSERTION LOSS

Notes: 1. Pulse Width = 1usec, Duty Cycle = 0.001 2. P = -10dBm max 3. P = +30dBm, Pulse Width = 1usec, Duty Cycle = 0.001 4. RF Power Handling is linearly derated from full power at +25°C to zero power at +150°C

FLAT LEAKAGE

PIN Diode Limiter Assemblies Standard Broadband Modules STANDARD Limiter BROADBAND LIMITER MODULES Frequency Range (GHz)

0.5 to 4.0

2.0 to 8.0

4.0 to 12.0

8.0 to 18.0

2.0 to 18.0

Insertion Loss (dB max) 0.5 0.7 0.7 0.8 0.6 0.7 0.7 1.2 1 1 1.6 1.9 1.9 2.2 2 2 2.2

VSWR (max)

Survival Peak

1.5:1 1.5:1 1.5:1 1.5:1 1.7:1 1.7:1 1.7:1 1.7:1 1.8:1 1.8:1 1.8:1 1.9:1 1.9:1 2.0:1 2.0:1 2.0:1 2.0:1

100 200 200 1000 100 200 200 1000 200 200 800 200 200 600 200 200 600

Power (Watts) CW 3 3 3 5 2 2 2 3 2 2 3 2 2 3 2 2 3

Flat Leakage (mW Max) 400 200 125 200 500 125 100 200 100 60 200 100 60 200 125 100 200

Model Number

Package Style

GG77012-01 GG77010-01 GG77011-01 GG77013-01 GG77012-02 GG77010-02 GG77011-02 GG77013-02 GG77010-03 GG77011-03 GG77013-03 GG77010-04 GG77011-04 GG77013-04 GG77010-05 GG77011-05 GG77013-05

210013 210001 210003 210003 210013 210001 210003 210003 210001 210003 210003 210001 210003 210003 210001 210003 210003

Notes: All low level parameters specified at -10 dBm input power All limiter modules require an external DC return of 1.0 ohm or less except the GG77014-XX

Low Leakage Limiter Modules LOWBroadband LEAKAGE BROADBAND LIMITER MODULES 2.0 to 8.0 4.0 to 12.4 8.0 to 18.0

1.4 1.9 2.2

1.8:1 2.0:1 2.0:1

10 10 10

1 1 1

20 20 35

GG77014-01 GG77014-02 GG77014-03

series, which requires external

210003 210003 210003

DC blocks at both ends. Model numbers GG77314XX incorporate DC blocking capacitors and do not require either ground return or external

StandardSTANDARD Broadband Connectorized Limiters LIMITERS BROADBAND CONNECTORIZED Frequency Range (GHz)

0.5 to 4.0

2.0 to 8.0

4.0 to 12.0

8.0 to 18.0

2.0 to 18.0

Insertion Loss (dB max) 0.6 0.7 0.9 1 1 1.5 1.5 1.5 2.1 2.2 2.5 2.5 2.2 2.5 2.5

VSWR (max)

Survival Peak

1.5:1 1.5:1 1.5:1 1.7:1 1.7:1 1.7:1 1.8:1 1.8:1 1.8:1 1.9:1 1.9:1 2.0:1 2.0:1 2.0:1 2.0:1

200 200 1000 200 200 1000 200 200 800 200 200 600 200 200 600

Power (Watts) CW 3 3 5 2 2 3 2 2 3 2 2 3 2 2 3

Flat Leakage (mW Max) 200 100 200 125 100 200 100 60 200 100 60 200 125 100 200

DC blocks

Model Number

Package Style

GG77310-01 GG77311-01 GG77313-01 GG77310-02 GG77311-02 GG77313-02 GG77310-03 GG77311-03 GG77313-03 GG77310-04 GG77311-04 GG77313-04 GG77310-05 GG77311-05 GG77313-05

210019 210019 210019 210019 210019 210019 210019 210019 210019 210019 210019 210019 210019 210019 210019

1.4 2 2.5 1.4 2 2.5

1.8:1 2.0:1 2.0:1 1.8:1 2.0:1 2.0:1

10 10 10 10 10 10

1 1 1 1 1 1

20 20 35 20 20 35

GG77314-04 GG77314-05 GG77314-06 GG77314-07 GG77314-08 GG77314-09

µsec pulse width and 0.001 duty cycle Spike leakage is 0.2 ergs (max) based on the assumption that the pulse rise time of the high power pulse is greater than 20.0 nsec. Spike leakage for the low frequency limiters is specified at 0.1 ergs (max) Recovery time (3 dB) for all units expect for the GG77014-XX, GG77314-XX and GG77315XX series is 250nSec @ 100W pulsed input power. Series GG77314-XX and GG77014-

Low LeakageLOW Connectorized Limiters LEAKAGE CONNECTORIZED LIMITERS 2.0 to 8.0 4.0 to 12.4 8.0 to 18.0 2.0 to 8.0 4.0 to 12.4 8.0 to 18.0

Peak power ratings apply @ 1.0

XX recovers in 500nSec at

210019 210019 210019 210032 210032 210032

rated pulsed power and series GG77315-XX recovers in 1.0µSec at rated pulsed power Limiting threshold (1 dB compression point) is 5mW (min) except for the GG77014-XX and

Low Frequency Connectorized Limiters LOW FREQUENCY CONNECTORIZED LIMITERS 0.01 to 0.1 0.1 to 0.5 0.5 to 1.0 0.01 to 0.1 0.1 to 0.5 0.5 to 1.0

0.7 0.7 1 0.7 0.7 1

1.5:1 1.5:1 1.5:1 1.5:1 1.5:1 1.5:1

100 100 100 100 100 100

1 1 1 1 1 1

200 200 200 200 200 200

GG77315-01 GG77315-02 GG77315-03 GG77315-04 GG77315-05 GG77315-06

210019 210019 210019 210093 210093 210093

GG77314-XX series which is 1.0mW (min) Leakage levels are specified at rated peak power

SP5T

Switches SP6T

ABSORPTIVE SWITCHES Absorptive Switches

SPST

SP2T

SP3T

SP4T

SP5T

SP6T

Model Number

Frequency Range

GG71420-01 GG71420-02 GG71420-03 GG71420-04 GG71420-05 GG72420-01 GG72420-02 GG72420-03 GG72420-04 GG72420-05 GG73420-01 GG73420-02 GG73420-03 GG73420-04 GG73420-05 GG74420-01 GG74420-02 GG74420-03 GG74420-04 GG74420-05 GG75420-01 GG75420-02 GG75420-03 GG75420-04 GG75420-05 GG75425-01 GG75425-02 GG75425-03 GG75425-04 GG75425-05

0.5 – 4.0 2.0 – 8.0 4.0 – 12.4 8.0 – 18.0 2.0 – 18.0 0.5 – 4.0 2.0 – 8.0 4.0 – 12.4 8.0 – 18.0 2.0 – 18.0 0.5 – 4.0 2.0 – 8.0 4.0 – 12.4 8.0 – 18.0 2.0 – 18.0 0.5 – 4.0 2.0 – 8.0 4.0 – 12.4 8.0 – 18.0 2.0 – 18.0 0.5 – 4.0 2.0 – 8.0 4.0 – 12.4 8.0 – 18.0 2.0 – 18.0 0.5 – 4.0 2.0 – 8.0 4.0 – 12.4 8.0 – 18.0 2.0 – 18.0

Insertion Loss (dB max) 1.7 2.1 2.4 2.9 2.9 1.7 2.1 2.4 2.9 2.9 1.7 2.2 2.5 3 3 1.8 2.3 2.7 3.2 3.2 1.6 2.1 2.6 3.2 3.2 1.8 2.2 2.9 3.6 3.6

Isolation

VSWR

(dB min) 55 50 45 45 45 60 55 50 45 45 60 55 50 45 45 60 55 50 45 45 45 40 40 35 35 45 40 40 35 35

(max) 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1

Outline 210059 210059 210059 210059 SPST 210059 210047 210047 210047 210047 210047 SP2T 210079 210079 210079 210079 210079 SP3T 210049 210049 210049 210049 210049 SP4T 210050 210050 210050 210050 210050 SP5T 210051 210051 210051 210051 210051

Reflective Switches

SPST

SP2T

SP3T

SP4T

SP5T

SP6T

Notes: 1. Required D.C. Bias: +5V and -8 to SWITCHES -15V REFLECTIVE 2. Switching Speed: 1usec maximum (50% TTL to 10/90% RF) 3. Only the switched arms are matched in the isolated state Insertion Isolation VSWR Frequency Outline Model Number Loss only when one path is in the loss 4. The common arm, J1, is matched state Range (dB max) (dB min) (max) 5. DC blocks incorporated on all RF ports GG71410-01 0.5 – 4.0 0.9 40 1.5:1 210059 GG71410-02 2.0 – 8.0 1.3 50 1.7:1 210059 GG71410-03 4.0 – 12.4 1.5 60 1.8:1 210059 GG71410-04 8.0 – 18.0 1.7 55 1.9:1 210059 GG71410-05 2.0 – 18.0 1.8 45 2.0:1 210059 GG72430-01 0.5 – 4.0 1 60 1.5:1 210047 GG72430-02 2.0 – 8.0 1.6 60 1.7:1 210047 GG72430-03 4.0 – 12.4 2.2 60 1.8:1 210047 GG72430-04 8.0 – 18.0 2.5 55 1.9:1 210047 GG72430-05 2.0 – 18.0 2.5 55 2.0:1 210047 GG73430-01 0.5 – 4.0 1.1 60 1.5:1 210079 GG73430-02 2.0 – 8.0 1.8 60 1.7:1 210079 GG73430-03 4.0 – 12.4 2.4 60 1.8:1 210079 GG73430-04 8.0 – 18.0 2.7 55 1.9:1 210079 GG73430-05 2.0 – 18.0 2.7 55 2.0:1 210079 GG74430-01 0.5 – 4.0 1.2 60 1.5:1 210049 GG74430-02 2.0 – 8.0 1.9 60 1.7:1 210049 GG74430-03 4.0 – 12.4 2.4 60 1.8:1 210049 GG74430-04 8.0 – 18.0 2.9 55 1.9:1 210049 GG74430-05 2.0 – 18.0 2.9 55 2.0:1 210049 GG75430-01 0.5 – 4.0 1.3 60 1.5:1 210050 GG75430-02 2.0 – 8.0 2.1 55 1.7:1 210050 GG75430-03 4.0 – 12.4 2.6 50 1.8:1 210050 GG75430-04 8.0 – 18.0 3.3 45 1.9:1 210050 GG75430-05 2.0 – 18.0 3.3 45 2.0:1 210050 GG75435-01 0.5 – 4.0 1.5 60 1.5:1 210051 GG75435-02 2.0 – 8.0 2.3 60 1.7:1 210051 GG75435-03 4.0 – 12.4 2.8 60 1.8:1 210051 GG75435-04 8.0 – 18.0 3.6 55 1.9:1 210051 GG75435-05 2.0 – 18.0 3.6 55 2.0:1 210051

Notes: 1. Required D.C. Bias: +5V and -8 to -15V 2. Switching Speed: 50nsec maximum (50% TTL to 10/90% RF) 3. DC blocks incorporated on all RF ports

GG74420-04 GG74420-05 GG75420-01 GG75420-02 GG75420-03 GG75420-04 GG75420-05 GG75425-01 GG75425-02 GG75425-03 GG75425-04 GG75425-05

8.0 – 18.0 2.0 – 18.0 0.5 – 4.0 2.0 – 8.0 4.0 – 12.4 8.0 – 18.0 2.0 – 18.0 0.5 – 4.0 2.0 – 8.0 4.0 – 12.4 8.0 – 18.0 2.0 – 18.0

3.2 3.2 1.6 2.1 2.6 3.2 3.2 1.8 2.2 2.9 3.6 3.6

45 45 45 40 40 35 35 45 40 40 35 35

1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1

210049 210049 210050 210050 210050 210050 210050 210051 210051 210051 210051 210051

REFLECTIVE SWITCHES Notes: 1. Required D.C. Bias: +5V and -8 to -15V Insertion 2. Switching Speed: 1usec maximumIsolation (50% TTL toVSWR 10/90% RF) Frequency Outline Model Loss 3. Number Only the switched Range arms are matched in the isolated state (dB max) (dB min) (max) 4. The common arm, J1, is matched only when one path is in the loss state GG71410-01 0.5 – 4.0 0.9 40 1.5:1 210059 5. DC blocks incorporated on all RF ports GG71410-02 2.0 – 8.0 1.3 50 1.7:1 210059 GG71410-03 4.0 – 12.4 1.5 60 1.8:1 210059 GG71410-04 8.0 – 18.0 1.7 55 1.9:1 210059 GG71410-05 2.0 – 18.0 1.8 45 2.0:1 210059 GG72430-01 0.5 – 4.0 1 60 1.5:1 210047 GG72430-02 2.0 – 8.0 1.6 60 1.7:1 210047 GG72430-03 4.0 – 12.4 2.2 60 1.8:1 210047 GG72430-04 8.0 – 18.0 2.5 55 1.9:1 210047 GG72430-05 2.0 – 18.0 2.5 55 2.0:1 210047 GG73430-01 0.5 – 4.0 1.1 60 1.5:1 210079 GG73430-02 2.0 – 8.0 1.8 60 1.7:1 210079 GG73430-03 4.0 – 12.4 2.4 60 1.8:1 210079 GG73430-04 8.0 – 18.0 2.7 55 1.9:1 210079 GG73430-05 2.0 – 18.0 2.7 55 2.0:1 210079 GG74430-01 0.5 – 4.0 1.2 60 1.5:1 210049 GG74430-02 2.0 – 8.0 1.9 60 1.7:1 210049 GG74430-03 4.0 – 12.4 2.4 60 1.8:1 210049 GG74430-04 8.0 – 18.0 2.9 55 1.9:1 210049 GG74430-05 2.0 – 18.0 2.9 55 2.0:1 210049 GG75430-01 0.5 – 4.0 1.3 60 1.5:1 210050 GG75430-02 2.0 – 8.0 2.1 55 1.7:1 210050 GG75430-03 4.0 – 12.4 2.6 50 1.8:1 210050 GG75430-04 8.0 – 18.0 3.3 45 1.9:1 210050 GG75430-05 2.0 – 18.0 3.3 45 2.0:1 210050 GG75435-01 0.5 – 4.0 1.5 60 1.5:1 210051 GG75435-02 2.0 – 8.0 2.3 60 1.7:1 210051 GG75435-03 4.0 – 12.4 2.8 60 1.8:1 210051 GG75435-04 8.0 – 18.0 3.6 55 1.9:1 210051 GG75435-05 2.0 – 18.0 3.6 55 2.0:1 210051 Notes: 1. Required D.C. Bias: +5V and -8 to -15V 2. Switching Speed: 50nsec maximum (50% TTL to 10/90% RF) 3. DC blocks incorporated on all RF ports

RF, Microwave & mmWave Diode Package Styles Microsemi Lowell offers a wide variety of package styles to meet specific design requirements. Package selection is an important step in the design process. Designers need to be aware of parametric trades-offs for the various package styles. Some considerations are: • • • • • • •

Electrical Performance. Thermal Requirements Hermetic / Non Hermetic Taped and Reeled for automatic assembly Cost versus Performance. RoHS compliance Consult the factory for package selection assistance.

This catalog contains outlines for a selection of our standard package styles. However, we supply numerous variations of these packages to suit specific application needs. Microsemi can also work together with engineers to develop custom package solutions. Most of our packages are supplied with a gold finish suitable for ‘Lead Free’ and Pb/Sn assembly techniques. Some RoHS compliant packages are supplied with a Matte Tin finish.

Microsemi offers: • Hi-Rel Hermetic Packages • High Frequency / Broadband (Through 40 Ghz) Discrete Packages

- Chip,Beamlead & Flip Chip devices

• High Power Packages

-Stud, ASM & SM Styles

• Low Cost High Volume Packages

- SOT 23

- Gigamite (GM1)

• Broadband performance, Economically Priced “MMSM”

- Style 206

• EPSMTM (Enhance Performance Surface Mount)

- Style 150, 250 and 450 Series

• RoHS Compliant Packaging

Diode Packages Packages are RoHS Compliant unless specified

Style 34

Style 79

Style 115A

Style 127A

Style 127C

Style 149

Diode Packages Packages are RoHS Compliant unless specified

Style 174C

Style 206 (MMSMâ&#x201E;˘)

Style 250A - 250D

Style 454

Style GM1

Style M1

RF & Microwave Power Transistor Products

Among many diverse semiconductor business units, the Microsemi RF Integrated Solutions (RFIS) business unit was created in 2010 to best cohesively serve the RF, microwave, and millimeter wave products market. Along with diode and amplifier products were included RF and microwave power transistor products. The Microsemi RF and microwave power transistor products group specializes in supporting customers in the avionics, communications, and radar markets with full line-ups of products meeting the demanding requirements of transmitter amplifier systems, operating in airborne, ground based, missile, ship borne and space environments. The Microsemi RFIS RF and microwave power transistor products line heritage spans more than 35 years and includes legacy CW and high pulsed power silicon bipolar junction transistor (BJT) devices and products originally designed by Acrian, GHz Technology, Advanced Power Technologies, Microwave Semiconductor Corporation, Motorola Semiconductor, Solid State Scientific, and SGS Thompson Microelectronics (ST). Whether an airborne IFF (Identify Friend or Foe), ground based primary surveillance radar, or for satellite borne communications or imaging, in the high reliability market most RF and microwave power amplifier transmitter systems are designed for a product life cycle of 15 to well beyond 25 years. Microsemi RF & microwave transistor product offerings are unique in supporting applications throughout the full life cycle and thereby have cultivated a long standing relationship with major system manufacturers worldwide. Our Santa Clara California silicon wafer foundry and Bend Oregon silicon and silicon carbide wafer foundries produce a very broad range of transistor die covering the frequencies from HF through 3.5 GHz, CW and Pulsed. Our facilities are fully ISO9001

certified and supply product for commercial, defense and space applications. Automated assembly and test equipment assures Microsemi customers consistent high quality products resulting in highest factory yields achievable which is passed on to Microsemi customers as the lowest cost of ownership. Combined with the use of the most advanced modern equipment for both manufacturing and test, is statistical process control (SPC) to achieve the best continual process improvement (CPI). Our Mission and Goals Our mission is to be the world leader in high power silicon and wide band gap (WBG) RF and microwave power transistors for avionics, communications and radar systems. With a sustained high research and development investment and a keen eye for accretive acquisitions, Microsemi will continue to be the market leader, always pushing the performance envelope by along with the best, and most efficient power amplifier driver transistors, continually introducing the highest power state of the art, most rugged and reliable RF, microwave, and millimeter wave transistor products. Whether a die, a packaged transistor, a 50立 input and output plug and play transistor pallet, or a more integrated amplifier assembly, simply: The Microsemi goal is to provide the customer with products that meet all specified requirements over the life of the program. This ensures that our customers will always achieve the optimum system performance and lowest total cost of ownership.

GaN & SiC / Wide Band Gap • VHF/UHF/L-Band SiC SIT devices deliver up to 2200W • Pulsed & CW products for primary and secondary power output under 300us pulse width and 10% duty radars & communications systems cycle pulsing • Wide band gap technologies allow higher voltage and • GaN on SiC transistor devices deliver greater than higher junction temperature operation: more power - 700W for L-Band pulsed avionics less space • For pulsed radar GaN on SiC transistor devices deliver • High Voltage GaN HEMT’s on SiC for best thermal greater than 500W at L-Band, 500W at S-Band, & dissipation 150W at C-Band • Wide band gap GaN on SiC HEMT (high electron 2013 Short Formtransistor) Catalog - Wide mobility transistor) & SiC SIT (static induction Band Gap SiC GaN on Sic semiconductor technologies Pulsed Devices Class AB VHF 150-160 MHz SiC SIT Common Gate UHF 406-450 MHz SiC SIT Common Gate

1030 MHz Mode-S ELM GaN on SiC HEMT 1030/1090 MHz Mode-S ELM GaN on SiC HEMT Common Source 1030MHz Mode-S / TCAS / IFF GaN on SiC HEMT Common Source 1025-1150 MHz Air DME GaN on SiC Class AB Common Source 960-1215 MHz HD Data Link GaN on SiC HEMT Common Source

L-Band 1200-1400 MHz GaN on SiC HEMT Common Source

S-Band 2700-2900 MHz GaN on SiC HEMT Common Source

S-Band 2700-3100 MHz GaN on SiC HEMT Common Source

S-Band 2700-3500 MHz GaN on SiC HEMT Common Source S-Band 3100-3500 MHz GaN on SiC HEMT Common Source

C-Band 4400-6000 MHz GaN on SiC HEMT Common Source

Idq Ave1 (mA)

Pulse Width (μ s)

Duty Cycle (%)

VSWR Load

(V)

η Typ (%)

9.5

125

500

300

10:1

11 55 155 270 440 5

10 10 8.5 8 8 21.5

125 125 125 125 125 65

50 50 55 55 55 75

30 100 150 125 150 1000

300 300 300 300 300 2400**

10 10 10 6 6 6.4

650 750

5 14.1

20.8 17.2

65 50

67 68

100 100

2400** 2400**

1000

17.8

17.5

100

700

12.6

20 100 300 300 600 650 20 100 280 500 550 150 150 270 270 400 500 500 20 100 110 110 200 220 450 35 100

0.4 2.5 4 6.3 8 11.2 0.4 2.5 6.3 8 12 10 8 16 12.6 28.2 36 35.5 0.5 8 8 7.5 12 16 36 2 8

17 16 17.5 16.8 18 17.6 17 16 16.7 18 16.6 11.76 12.7 12.7 13.3 11 11.4 11.5 16 11 11.4 11.7 12.2 11.4 11 12.4 11

50 50 65 50 65 50 50 50 50 60 50 50 60 50 60 65 50 65 50 50 50 60 60 50 50 60 60

20 110 120 170 200 380 100 70

1 9 9 12 16 36 9 7

13 10.87 10.8 11.5 11 10 10.45 10

50 50 60 60 50 50 60 60

Pout Min (W)

Pin Max (W)

Gain Min (dB)

Vdd

1250

160

100 500 1000 1500 2200 700

Case Style

Part Number

0.15

55KT-2

0150SC-1250M

10:1 10:1 10:1 5:1 10:1 3:1

2.5 0.3 0.15 0.15 0.15 0.25

55KT-FET 55KT-FET 55ST-FET 55ST-FET 55TW-FET 55KR

6.4 6.4

3:1 3:1

0.25 0.24

55KR 55KR

MDS-GN-650ELM MDSGN-750ELMV*

3:1

0.12

55KR

1011GN-1000V*

100

3:1

0.21

55KR

DME-GN-700V

55 55 55 55 55 55 50 55 60 55 55 50 50 55 55 50 50 54 46 50 50 42 42 50 46 40 40

10 30 50 50 100 100 20 30 50 50 100 30 30 60 60 80 100 100 10 30 30 30 500 80 150 15 30

128 3000 128 128 128 128 300 3000 200 300 300 100 100 100 100 100 100 100 200 3000 200 200 200 200 200 300 300

10 30 10 10 10 10 10 30 20 10 10 10 10 10 10 10 10 10 10 30 10 10 10 10 10 10 10

3:1 3:1 3:1 3:1 3:1 3:1 5:1 3:1 3:1 3:1 3:1 5:1 5:1 3:1 3:1 3:1 3:1 3:1 5:1 3:1 5:1 5:1 3:1 3:1 3:1 5:1 5:1

6.56 1.07 0.3 0.44 0.2 0.23 5.39 1.1 0.57 0.16 0.24 0.92 1.1 0.38 0.6 0.24 0.18 0.2 4.59 1.02 0.93 1.1 0.6 0.47 0.19 2.4 1.1

55KR 55KR 55KR 55KR 55KR 55KR 55KR 55KR 55KR 55KR 55KR 55QP 55QP 55QP 55QP 55KR 55KR 55KR 55QP 55QP 55QP 55QP 55QP 55QP 55KR 55QP 55QP

0912GN-20V* 0912GN-100LV* 0912GN-300 0912GN-300V* 0912GN-600 0912GN-650V* 1214GN-20V* 1214GN-100LV* 1214GN-280LV* 1214GN-500 1214GN-550V* 2729GN-150V* 2729GN-150 2729GN-270V* 2729GN-270 2729GN-400 2729GN-500V* 2729GN-500 2731GN-20V* 2731GN-100LV* 2731GN-110V* 2731GN-110M 2731GN-200M 2731GN-220V* 2731GN-450V* 2735GN-35M 2735GN-100M

45 42 48 35 40 40 50 39

10 30 30 60 80 100 30 30

300 300 300 300 300 300 100 100

10 10 10 10 10 10 10 5

5:1 5:1 3:1 3:1 3:1 3:1 3:1 3:1

4.32 0.68 1.1 0.6 0.38 0.19 1 0.94

55QP 55QP 55QP 55QP 55QP 55KR 55QP 55QP

3135GN-20V* 3135GN-110V* 3135GN-120M 3135GN-170M 3135GN-200V* 3135GN-400V* 4450GN-100 5259GN-70

θjc (°C/W)

0405SC-100M 0405SC-500M 0405SC-1250M 0405SC-1500M 0405SC-2200M 1011GN-700ELM

* Consult factory for final qualification information ** 32us on/ 18us off pulse burst of 48 pulses; total burst width of 2400us

Pulsed High Power Pallets • L&S-band pulsed radar and avionics pallets • 50Ω In / 50Ω out plug and play • SMA connector friendly • Copper heatsinks for excllent heat dissipation 2013 Short Form Catalog - Wide Band Gap SiC GaN on Sic

Frequency Band (MHz)

Si Bipolar Class C L-Band 1200-1400MHz Primary Surveillance Radar S-Band 2700-3500MHz Primary Surveillance Radar

1200-1400 1200-1400 1200-1400 2700-2900 2700-3100 2700-3100

(V)

η Typ (%)

Idq Ave1 (mA)

Pulse Width (μ s)

Duty Cycle (%)

42 50 50 36 36 38

55 52 52 45 45 45

-------

300 300 300 300 200 200

10 10 10 10 10 10

Pout Min (W)

Gain Min (dB)

Vcc/Vdd

550 700 800 300 200 230

8.5 8.5 8.6 8 8 8.5

Part Number 1214-550P 1214-700P 1214-800P 2729-300P 2731-200P 2731-230P

Power Solutions Modules Microsemi RFIS – TS supplies a selected to form a high power amplifier with minimal list of Power Solution Modules which design cost. The PSM units are built to consist of a pair of transistors mounted on order and delivered within a few weeks. The a copper heat spreader and have terminal photos below show at BJT as well as a GaN Power Solutions Modules impedances of 50 Ohms thereby providing version. Microsemi RFIS – TS supplies a selected list of Power Solution Modules which consist of a pair of transistors mounted on a copper heat spreader the user with a compact – ready to use and have terminal impedances of 50 Ohms thereby providing the user with a compact – ready to use ( Plug and Play) unit that can be combined to form a high power amplifier with minimal The PSM units are built to order and delivered within a few weeks. The photos below show at (Plug and Play) unit thatdesign can cost. be combined BJT as well as a GaN version.

5/28/2013

Joe RFIS Diode-Transistor SFC May 2013 MASTER May 17.xls

1214-550P ATC Long Range Radar 1214-700P ATC Long Range Radar 1214-800P ATC Long Range Radar

1215 - 1400 MHz 1215 - 1400 MHz 1215 - 1400 MHz

SiBJT SiBJT SiBJT

Pout W 550 W 700 800

2729-300P ATC Airport Surveillance

2700 - 2900 MHz

SiBJT

300

8.0

300

2700 - 3100 MHz

SiBJT

200

8.0

200

2700-3100 MHz

SiBJT

230

8.5

200

Model

Application

ATC Airport Surveillance 2731-200P Dual Band ATC Airport Surveillance 2731-230P Dual Band

Frequency Band

Technology

Pgain dB 8.5 dB 8.5 8.6

Vcc/Vdd Volts 42 50 50

Eff % 55 52 52

PW us 300 300 300

DF % 10 10 10

Pulsed Primary Radar

Pulsed Primary Radar • Pulsed radar products for system operating bands: - VHF 150-160MHz - UHF 406-450MHz - P-Band 890-1000MHz - L-Band 1.2-1.4GHz & 1480-1650MHz - S-Band 2.7-3.5GHz - C-Band 4.4-5.0GHz & 5.2-6.0GHz • Characterized to meet the system signal format on parameters such as: rise and fall time, pulse droop, gain spread short pulse, long pulse and combinations, gain change vs. frequency and temperature, and power saturation • Wide band gap GaN on SiC HEMT (high electron mobility transistor) & SiC SIT (static induction transistor) semiconductor technologies2 • Si bipolar traditional high reliability technology transistor devices and products

Notes to Pulsed Radar Table: Microsemi supports customer specifications and develops custom products. Please contact the factory for more information. 1 For best efficiency GaN common source class AB transistor gate is turned off when pulse burst is not present peak & Idq=(Idq-ave)/(duty cycle) 2 For UHF through C-Band pulsed radar transistors: 1st two digits are low frequency band start and 2nd two digits are band end in 100’s of MHz

3 GN=GaN & SC=SiC in part number

Pulsed Primary Radar Idq 1 Ave (mA) 500

Pulse Width (μ s) 300

Duty Cycle (%) 10

VSWR Load

(V) 125

η Typ (%) 60

9.6 9.7

40 40

50 50

---

250 250

11 55 155 270 440 9.5 23 33 0.35 1.2 2.5 6 5.3 12.3 20 27 40 42.7 40 50 0.4 2.5 5.5 6.3 8 12 3.5 20.5 -11.5 16 16 23 21.7 24 10 8 12.6 16 28.2 35.5 36 0.5 8 8 7.5 12 16 36 2 8

10 10 8.5 8 8 8 8.1 9.6 7.5 7 7.3 7 7.8 6.5 8 7.1 7.4 8 8.7 8.7 17 16 17 16.7 18 16.6 8 7.3 17 7.5 8 11.7 8 8.3 8.5 11.76 12.7 13.3 12.7 11 11.5 11.4 16 11 11.4 11.7 12.2 11.4 11 12.4 11

125 125 125 125 125 40 48 50 28 28 28 28 36 28 50 36 40 50 40 50 50 50 60 50 60 50 36 40 60 36 36 36 36 38 36 50 60 60 50 65 65 50 50 50 50 60 60 50 50 60 60

50 50 55 55 55 40 40 40 45 40 40 48 45 45 55 48 50 45 55 50 50 50 55 60 55 55 40 40 48 40 40 40 35 50 50 50 50 55 55 50 54 50 46 50 50 42 42 50 46 40 40

30 125 250 125 120 ---------------20 30 60 50 50 100 ---------30 30 60 60 80 100 100 10 30 30 30 50 80 150 15 30

20 110 120 170 200 380 100 70

1 9 9 12 16 36 9 7

13 10.87 10.8 11.5 11 10 10.45 10

50 50 60 60 50 50 60 60

45 42 48 35 40 40 50 39

Pout Min (W)

Pin Max (W)

Gain Min (dB)

Vcc/Vdd (V)

550 700 800 300 200 230

-------

8.5 8.5 8.6 8 8 8.5

42 50 50 36 36 38

Pout Min (W) 1250

Pin Max (W) 160

Gain Min (dB) 9.5

Vcc/Vdd

UHF 400-500 MHz Si Bipolar Class C Common Emitter

300 500

33 54

UHF 406-450 MHz SiC SIT Class AB Common Gate

100 500 1000 1500 2200 60 150 300 2 6 12 30 32 55 110 140 220 270 300 370 20 100 280 280 500 550 20 110 500 65 100 110 125 150 170 150 150 270 270 400 500 500 20 100 110 110 200 220 450 35 100

Devices VHF 150-160 MHz SiC SIT Class AB Common Gate

P-Band 890-1000 MHz Si Bipolar Class C Common Base L-Band 1200-1400 MHz Si Bipolar Class C Common Base

L-Band 1200-1400 MHz GaN on SiC HEMT Class AB Common Source

L-Band 1480-1650 MHz Si Bipolar Class C Common Base S-Band 2700-3500 MHz Si Bipolar Class C Common Base

S-Band 2700-2900 MHz GaN on SiC HEMT Common Source Class AB

S-Band 2700-3100 MHz GaN on SiC HEMT Common Source Class AB

S-Band 2700-3500 MHz GaN on SiC HEMT Common Source Class AB S-Band 3100-3500 MHz GaN on SiC HEMT Common Source Class AB

C-Band 4400-6000 MHz GaN on SiC HEMT Common Source Class AB

50Ω Pallets Si Bipolar - Class C L-Band 1200-1400MHz Primary Surveillance Radar S-Band 2700-2900MHz Primary Surveillance Radar S-Band 2700-3100MHz Primary Surveillance Radar

θjc

Case Style

Part 3 Number

10:1

(°C/W) 0.15

55KT-2

10 10

20:1 20:1

0.2 0.15

M106 M102

300 300 300 300 300 150 150 150 CW CW CW 2000 5000 2000 330 5000 150 100 150 330 300 3000 300 200 300 300 200 200 400 120 200 200 100 50 100 100 100 100 100 100 100 100 200 3000 200 200 200 200 200 300 300

10 10 10 6 6 5 5 5 100 100 100 20 20 20 10 20 10 10 10 10 10 30 10 20 10 10 10 10 10 10 10 10 10 4 10 10 10 10 10 10 10 10 10 30 10 10 10 10 10 10 10

10:1 10:1 10:1 5:1 10:1 3:1 3:1 3:1 10:1 10:1 10:1 3:1 3:1 3:1 3:1 3:1 3:1 3:1 3:1 2:1 5:1 3:1 3:1 3:1 3:1 3:1 3:1 3:1 3:1 2:1 2:1 5:1 2:1 2:1 2:1 5:1 3:1 3:1 3:1 3:1 3:1 3:1 5:1 3:1 5:1 5:1 3:1 3:1 3:1 5:1 5:1

2.5 0.3 0.15 0.15 0.15 1 0.48 0.22 14 9.0 4.5 2.0 2.3 1.0 0.65 0.55 0.25 0.22 0.29 0.29 5.39 1.1 0.35 0.57 0.16 0.24 1 0.5 0.16 0.5 0.3 1.1 0.5 0.3 0.3 0.92 1.1 0.6 0.38 0.24 0.2 0.18 4.59 1.02 0.93 1.1 0.6 0.47 0.19 2.4 1.1

55KT-FET 55KT-FET 55ST-FET 55ST-FET 55TW-FET 55AW-1 55KT-1 55KT-1 55LT 55LV 55LT 55AW-1 55AW-1 55AW-1 55KT-1 55ST-1 55ST-1 55KT-1 55ST-1 55ST-1 55KR 55KR 55KR 55KR 55KR 55KR 55LV 55AW-1 55KR 55KS-1 55KS-1 55QP-1 55KS-1 55KS-1 55KS-1 55QP 55QP 55QP 55QP 55KR 55KR 55KR 55QP 55QP 55QP 55QP 55QP 55QP 55KR 55QP 55QP

0405SC-100M 0405SC-500M 0405SC-1250M 0405SC-1500M 0405SC-2200M 0910-60M 0910-150M 0910-300M 1014-2 1014-6A 1014-12 1214-30 1214-32L 1214-55 1214-110M 1214-150L 1214-220M 1214-300 1214-300M 1214-370M 1214GN-20V* 1214GN-100LV* 1214GN-280 1214GN-280LV* 1214GN-500 1214GN-550V* 1517-20M 1517-110M 1214GN-500 3134-65M 2731-100M 2731-110M 2729-125 2931-150 2729-170 2729GN-150V* 2729GN-150 2729GN-270 2729GN-270V* 2729GN-400 2729GN-500 2729GN-500V* 2731GN-20V* 2731GN-100LV* 2731GN-110V* 2731GN-110M 2731GN-200M 2731GN-220V* 2731GN-450V* 2735GN-35M 2735GN-100M

10 30 30 60 80 100 30 30

300 300 300 300 300 300 100 100

10 10 10 10 10 10 10 5

5:1 5:1 3:1 3:1 3:1 3:1 3:1 3:1

4.32 0.68 1.1 0.6 0.38 0.19 1 0.94

55QP 55QP 55QP 55QP 55QP 55KR 55QP 55QP

3135GN-20V* 3135GN-110V* 3135GN-120M 3135GN-170M 3135GN-200V* 3135GN-400V* 4450GN-100 5259GN-70

η Typ (%)

Idq Ave† (mA)

Pulse Width (μ s)

Duty Cycle (%)

VSWR Load

55 52 52 45 45 45

-------

300 300 300 300 200 200

10 10 10 10 10 10

-------

θjc

Size

(°C/W)

(In)

-------

0150SC-1250M

MS2176 MS2200

Part Number 1214-550P 1214-700P 1214-800P 2729-300P 2731-200P 2731-230P

Avionics • Highest performance output power devices for all pulsed L-Band avionics systems • Optimal devices for: Mode-5 IFF interrogators, Mode-S ELM transponders, TACAN, DME, Data Links, TCAS • Characterized to meet avionics system specifications on parameters such as: rise and fall time, pulse droop, gain spread multimode pulsing combinations, gain change vs. frequency and temperature, power saturation, and spectral masks • Wide band gap GaN on SiC HEMT (high electron mobility transistor)2 • Si bipolar traditional high reliability technology transistor devices and products Pin Max (W)

Gain Min (dB)

1030/1090 MHz Transponder/Interrogator Silicon Bipolar Class C Common Base

150 175 400

25 25 75

7.8 8.5 7.3

(V) 50 50 50

1090 MHz Transponder Silicon Bipolar Class A Common Emitter

0.2 0.6 0.6 2 4 35 75 95 350 450 500 500 600 700 1000 1000 1000

0.02 0.05 0.05 0.25 0.4 5.6 13 10 70 90 150 150 150 150 208 158 100

10 10.9 10.9 9 10 8 7.6 9.7 6.9 7 5.2 5.2 6 6.7 6.8 8 10

400

450 800 1200 70 75 150 400 500 500 800 1100 1400 60 140 500 700

100 100 150 6.5 9 20 90 70 70 100 115 170 6 15.7 70 5

1090 MHz Transponder Silicon Bipolar Class C Common Base

1030 MHz Interrogator Silicon Bipolar Class C Common Base 1090 MHz TCAS Silicon Bipolar Class C Common Base 1030 MHz TCAS Silicon Bipolar Class C Common Base 1030/1090 MHz Mode-S Silicon Bipolar Class C Common Base

1030/1090 MHz MODE S-ELM Silicon Bipolar Class C Common Base 1030 MHz Mode-S ELM GaN on SiC HEMT Class AB Common Source 1030/1090 MHz Mode-S ELM GaN on SiC HEMT Class AB Common Source 1030 MHz Mode-S/TCAS/IFF GaN on SiC HEMT Class AB Common Source

Vcc/V dd

Pout Min (W)

η Typ (%)

Idq Pulse Ave1 Width (mA) (μ s)

Duty Cycle (%)

VSWR Load

θjc

Case Style

Part Number

(°C/W)

40 40 40

----

10 10 10

1 1 1

30:1 30:1 20:1

0.3 0.45 0.2

M138 55CX-1 55CT-1

MS2393 TPR175 TPR400

18 18 18 28 28 50 50 40 50 50 50 50 50 50 50 50 50

---35 35 30 -40 40 40 35 35 35 35 43 45 50

------------------

CW CW CW 10 10 10 10 10 10 10 10 10 10 10 10 1 1

---1 1 1 1 1 1 1 1 1 1 1 1 1 1

30:1 30:1 30:1 -----20:1 25:1 10:1 10:1 30:1 10:1 9:1 4:1 4:1

25 35 25 10 35 2 0.8 0.6 0.12 0.1 0.1 0.06 0.08 0.06 0.08 0.08

M115 M220 M115 M220 M115 M115 M115 M210 M218 M216 55CT-1 55KT-1 M112 55KT-1 55KV-1 55SW-1 55SW-1

MS2290 MS2203 MS2204 MS2201 MS2206 MS2341 MS2361 MSC1100 MSC1350M MSC1450M TPR500 TPR500A MS2473 TPR700 TPR1000 ITC1000 ITC1100

15:1

0.17

M216

6.5 9 9 10.3 9.2 10 6.5 8.5 8.5 9 9.4 9.1 10 9.5 8.5 21.5

45 45 50 50 50 50 45 50 50 50 50 52 50 50 50 65

35 45 45 35 48 40 35 45 45 40 40 45 40 50 55 70

---------------65

32 32 32 128† 32 128† 32 32 32 128† 128† 32 2400 2400†† 2400†† 2400††

2 1 2 1 2 1 1 2 2 1 1 2 6.4 6.4 6.4 6.4

10:1 4:1 4:1 5:1 10:1 3:1 10:1 4:1 4:1 4:1 4:1 3:1 2:1 2:1 3:1 3:1

0.06 0.09 0.02 0.8 0.86 0.5 0.15 0.12 0.12 0.12 0.02 0.025 0.5 0.15 0.15 0.25

55KT-1 55SM-1 55TU-1 55CX-1 M214 55AW-1 55KT-1 55ST-1 55SM-1 55ST-1 55TU-1 55TU-1 55AW-1 55AW 55ST-1 55KR

6.4

3:1

0.25

55KR

6.4

3:1

0.24

55KR

3:1

0.12

55KR

650

20.8

750

14.1

17.2

100 2400†† 100 2400††

1000

17.8

17.5

100

MS2207

TCS450 TCS800 TCS1200 MDS70 MS2228 MDS150 MDS400 10500 10502 MDS800 MDS1100 MDS1400 MDS60L MDS140L MDS500L 1011GN-700ELM

MDS-GN-650ELM MDS-GN-750ELMV* 1011GN-1000V*

Avionics

960-1215 MHz DME/TACAN Si Bipolar Class C Common Base 1025-1150 MHz Air DME Si Bipolar Class A CW Common Emitter 1025-1150 MHz Air DME Si Bipolar Class C Common Base

1025-1150 MHz Air DME GaN on SiC Class AB Common Source 960-1215 MHz Data Link Si Bipolar Class C Common Base

960-1215 MHz TACAN Si Bipolar Class C Common Base

960-1215 MHz HD Data LInk GaN on SiC HEMT Class AB Common Source

Vcc/ Vdd

θjc

η Typ (%)

Idq Ave1 (mA)

Pulse Width (μ s)

Duty Cycle (%)

VSWR Load

25 30 45 45 --

------

10 10 10 10 CW

1 1 1 1 --

10:1 10:1 10:1 10:1 10:1

3.5 2 1.4 0.8 33

55CT-1 M105 55CT-1 55CT-1 55FW-2

0912-7 MS2321 0912-25 0912-45 1000MP

35 35 35 28 28 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

45 35 35 35 -35 -45 43 48 45 -45 --40 40 40 35 40 -40 35 -40 60

-------------------------100

20 10 10 10 10 10 -10 10 10 10 -10 10 10 10 10 10 10 10 10 10 10 10 10 20

1 1 1 1 1 1 -1 1 1 1 -1 1 1 1 1 1 1 1 1 1 1 1 1 6

10:1 20:1 20:1 20:1 20:1 10:1 -10:1 20:1 20:1 10:1 -10:1 20:1 20:1 20:1 20:1 20:1 30:1 30:1 30:1 25:1 10:1 30:1 5:1 3:1

10 10 7 5 8 2 -1 1 1 0.8 1 0.8 0.6 0.6 0.6 0.3 0.2 0.2 0.2 0.12 0.12 0.1 0.06 0.05 0.21

55FW-1 M115 55FW-1 M220 M115 55FW-1 M115 55FW-1 M220 M115 55FW-1 M115 55FW-1 M115 M105 55AY-1 M218 M218 M103 55AT-1 M112 M216 55KT-1 M112 55ST-1 55KR

1002MP MS2202 1004MP MS2205 SD1526-01 1015MP MSC1015MP 1035MP MS2553 MS2575 1075MP MSC1075MP 1090MP SD1536-03 SD1536-08 DME150 MSC1175M MS2554 MS2421 DME375A MS2441 MSC1400M DME500 MS2472 DME800 DME-GN-700V*

28 28 36 35 36 36 35 36 35 40 50 50 50 50 50 50 50 50 50 50 50 50 65 50 65 50

45 45 40 40 40 40 40 45 45 40 40 38 38 40 38 38 45 38 40 40 55 55 55 55 55 58

--------------------10 30 50 50 100 100

6.4 10 10 6.4 10 10 6.4 7 7 20 20 10 20 20 20 10 20 10 10 10 128 3000 128 128 128 128

21 21 40 21 22 40 21 22 21 5 5 10 5 5 5 10 5 10 10 10 10 30 10 10 10 10

5:1 20:1 5:1 15:1 10:1 3:1 5:1 3:1 -10:1 30:1 -10:1 5:1 -15:1 5:1 15:1 3:1 3:1 5:1 3:1 3:1 3:1 3:1 3:1

7 3 1.8 2.2 0.8 0.8 0.75 0.5 0.57 1 0.6 0.8 0.3 0.3 0.28 0.16 0.15 0.16 0.12 0.07 6.56 1.07 0.3 0.44 0.2 0.23

M222 M222 55AT-1 M214 55AT-1 55AT-1 M218 55KT-1 M216 55LT-1 55AZ-1 M218 55AT-1 55AT-1 M214 M216 55KT-1 M216 55ST-1 55ST-1 55KR 55KR 55KR 55KR 55KR 55KR

MS2211 MS2212 JTDB25 MS2213 JTDA50 JTDB75 MS2214 JTDA150A MS2215 TAN15 TAN75A MS2209 TAN150 TAN250A MS2267 MS2210 TAN300 MS2272 TAN350 TAN500 0912GN-20V* 0912GN-100LV* 0912GN-300 0912GN-300V* 0912GN-600 0912GN-650V*

Pout Min (W)

Pin Max (W)

Gain Min (dB)

7 15 25 45 0.6

1 1.5 3.5 7 0.05

8.5 10 8.5 8.1 10.8

(V) 50 50 50 50 18

2 2 4 4 5 15 15 35 35 35 75 75 90 90 90 150 175 250 300 375 400 400 500 550 800 700

0.3 0.25 0.5 0.5 0.55 1.5 1.5 3.5 3 3 12 13 14 13 13 25 30 60 70 85 90 90 125 150 100 12.6

10 9 9 9 9.5 10 10 10 10.6 10.7 7.8 7.6 8.1 8.4 8.4 7.8 7.6 6.2 6.3 6.4 6.5 6.5 6 5.6 9 17.4

6 15 25 30 50 75 85 145 150 15 75 90 150 250 250 300 300 350 350 500 20 100 300 300 600 650

0.7 2.3 5 5 10 15 15 25 26.7 3 12 13 30 60 40 60 60 60 70 70 0.4 2.5 4 6.3 8 11.2

9.3 8.1 7 7.8 7 7 7.5 7.6 7.5 7 8 8.4 7 6.2 8 7 7 7.6 7 9 17 16 17.5 16.8 18 17.6

Case Style

Part Number

(°C/W)

Microsemi supports customer specifications and develops custom products. Please contact the factory for more information. 1 For best efficiency GaN common source class AB transistor gate is turned off when pulse burst is not present peak & Idq=(Idq-ave)/(duty cycle) 2 “GN” in part number denotes a GaN on SiC device † Burst of 0.5us ON/0.5us OFF x128 repeated at 6.4ms †† Burst of 32us ON/18us OFF x 48 repeated at 24ms *Consult factory for final qualification information

High Reliability Transistors Microsemi Transistor Solutions: Hi Rel Screening Capability and Products Post Production Screening Tests One hundred percent electrical screening of finished product is performed to guarantee that products comply with the customer supplied specification or data sheet. One hundred percent reliability testing is designed to remove latent failures and is also performed on all Microsemi RF & microwave power transistor products. These tests are designed with a â&#x20AC;&#x153;screening by failure modelâ&#x20AC;? philosophy in mind. Our standard 100% processing is detailed in Table I. Standard 100% processing complies with MIL-STD-883 and MIL-STD-750. Application UHF Comm

S-Band Telem

Avionics

Freq Range

Power Out (W)

100-500 MHz

225-400MHz

125

500-1000MHz

2200-2400 MHz

2200-2500MHz

2300-2400 MHz

1030/1090MHz

600 Pk

1030 MHz

1100 Pk

960-1215MHz

Qualification Tests All hermetic (solder sealed) Microsemi RF & microwave power transistor devices are capable of passing the standard matrix of environmental testing per MIL-STD-750. The tests stress the hermetic seal, the lead attachment and in general assure that the devices which pass the test matrix are inherently reliable in severe military-type environments. The tests are outlined in Table 2. Samples of current production, as well as samples of any new package design, are routinely subjected to this standard test matrix. Data exists in reliability files verifying conformance of Microsemi transistor devices in various packages to the environmental test sequence. This test matrix complies with MIL-STD-750.

Application

Model

Freq Range

Class A

23003H/HS

1000-2300 MHz

0.3

23A008H/HS

1000 - 2300 MHz

0.8

UHF Radar

0405SC-1000MH

406 - 450 MHz

P-Band Radar

0709-50H

650-850 MHz

50 Pk

0709-240H

650-850 MHz

240 Pk

0709-500H

650 - 850 MHz

500 Pk

L-Band Radar

75 Pk

Power Out (W)

1000 pk

1014-6AH

1215-1400 MHz

1214-30H

1215-1400 MHz

30 pk

960-1215MHz

250 Pk

1214-55H

1214-1400 MHz

55 pk

960-1215MHz

350 Pk

1214-300HS

1215-1400 MHz

300 pk

2729-170H

2700-2900 MHz

170 Pk

960-1215MHz

75 pk

960-1215MHz

150 pk

S-Band Radar

Table 1 MIL-STD-750 or TS (as noted) TEST

Notes: 1. Destructive test on line monitor of production equipment A) Standard Manu facturing Testing B) Reliability Testing C) High Reliability Screening

TEST METHOD

Wafer Probe -- DC

Wafer Probe Spec

SEM Wafer Inspection

MIL-STD-883

Wafer Qual

DC/RF Electrical

Level A

JANTXV

100%

OPT

All Wfr

-All Wfr

Die Visual

TS Specification

100%

Die Shear

2017

Note1

Bond Strength

2037

Note1

Precap Visual

2072

AQL

100%

100% Electrical

TS Specification

100%

Storage

1032

OPT

100%

Temperature Cycling

1051 Condition D

OPT

100%

Constant Acceleration

2006, Y1

OPT

100%

PIND Test

2052

OPT

100%

Gross Leak

1071.1 Condition H

100%

Fine Leak

1071.1 Condition C

AQL

100%

HTRB

1039 Condition A, 48 hrs

Burn - In

1039 Condition B

100%

DC Electrical

Product Specification

100%

RF Electrical

Product Specification

100%

Ext Visual / Mechanical

2071

AQL

Final QA

TS Specification

AQL

Group A,B,C

Done on Request

LTPD

High Reliability Transistors Hi Rel Screening Table 2 MIL-STD-750 EXAMINATION OR TEST

METHOD

CONDITION

Class B LTPD

2066

Test Condition A

(a) Marking Permanency

2008

Test Condition B 3.2.1

4 devices ( no failures)

(b) Visual & Mechanical

2071

Test Condition B

1 device ( no failures)

2037

Test Condition D

(d) Die Shear

2017 2026

Soldering temp of 260+ 10oC

15 Leads

2036

Test Condition B2

Group B Tests Subgroup 1 Physical Dimensions Subgroup 2

Subgroup 3 Solderability Subgroup 4 Terminal Strength Seal

1071

(a) Fine

Condition H

(b) Gross

Condition C

Group C Tests Subgroup 1 Thermal Shock

1011

Test Condition B

Temperature Cycling

1010

Test Condition C

Moisture Resistance

1004

Seal

1014

(a) Fine

Condition H

(b) Gross

Condition C

End Point electrical parameters

As Specified

Subgroup 2 Mechanical Shock

2016

Vibration Variable

2056

Constant Acceleration

2006

Seal

1071

(a) Fine

Condition H

(b) Gross

Condition C

End Point Electrical parameters

As Specified

Subgroup 3 Salt Atmosphere

3 Axis

15 1041

HF / VHF / UHF Communications HF Industrial/Communications • 2-175MHz single ended or balanced transistors Si bipolar for Class AB/C operation • 1-250W CW or Pulsed at 28V & 50V • RF Power for FM/SSB mobile and base stations, high power amplifiers, and industrial, scientific, and medical equipment VHF Communications • 50-175MHz single ended or balanced transistors for common emitter class C operation Si Bipolar • 1-150W CW biased at 12.5V, 28V, or 50V • AM/FM mobile and base station applications UHF Communications • Common emitter and common base class C single ended and balanced Si bipolar transistor • 225-400MHz, 1.5-125W, 12.5V or 28V • 450-512MHz, 1-45W at 12.5V • 836-960MHz, 1-45W at 12.5V Military Communications • 100-500MHz, 1-125W CW, 28V, ClassA/AB/C single ended or balanced Si bipolar transistors

HF Si Bipolar Class AB 2-30 MHz Common Emitter

HF/VHF/UHF Si Bipolar Class C HF 2-50 MHz Common Emitter

VHF 100-175 MHz Common Emitter

Pout Min (W) 100 130 150 150 220 220 250 250

Pout Max (W) 7.9 8.2 6 6 13.9 11 10 10

Gain min (dB) 11 12 14 14 12 13 14 14

Pout Min (W) 20 30 75 200 250 0.75 1 1.4 1.75 2.5 3 4 10 10 10 10 15 15 20 20

Pin Max (W) 0.65 0.48 3.8 12 9 0.015 0.1 0.1 0.125 0.2 0.5 0.25 0.1 0.1 1 1 1 3.5 3 3

Gain Min (dB) 15 18 14 12 14.5 17 10 12 12 11.5 8 12 10 10 10 10 12 6.3 8.2 8.2

Vcc (V) 12.5 28 50 50 28 50 50 50

Vcc (V) 12.5 28 12.5 50 50 12.5 12.5 7.5 12.5 7.5 12.5 12.5 12.5 12.5 28 28 12.5 12.5 28 28

η Typ (%) 50 50 50 50 50 50 50 50

η Typ (%) 60 60 60 60 37 -50 50 50 50 50 50 --55 55 60 60 55 60

Icq (mA) 150 150 100 100 750 150 150 150

Cob (pF) 100 -350 300 360 4 4 6 15 19 15 20 45 45 15 15 45 10 35 35

continued next page

VSWR Load 20:1 20:1 20:1 20:1 20:1 20:1 20:1 20:1

VSWR Load 20:1 20:1 20:1 30:1 20:1 --20:1 -20:1 --20:1 20:1 20:1 20:1 20:1 20:1 -20:1

θjc (°C/W) 0.6 1 0.75 0.75 0.7 0.7 0.4 0.4

θjc (°C/W) 2.2 2.2 2.2 0.65 0.4 125 175 35 35.7 11.6 35 22 8.75 8.75 13.5 13.5 8.75 5.6 5.83 5.8

Case Style

Part Number

M174 M174 M174 M164 M174 M174 M177 M177

MS1051 MS1078 MS1007 MS1008 MS1076 MS1079 MS1004 MS1011

Case Style

Part Number

M113 M113 M174 55HX-2 M177 SO-8 TO-39 M123 TO-39 M123 TO-39 TO-39 M135 M113 M135 M113 M122 M113 M113 M135

MS1227 MS1226 MS1001 S200-50 MS1004 SRF4427 2N4427 MS1403 MRF607 MS1401 2N6255 SD1127 SD1143 SD1143-01 SD1013 SD1013-03 MS1261 SD1014-06 MS1408 MS1406

HF / VHF / UHF Communications HF/VHF/UHF Si Bipolar Class C

UHF 225-400 MHz Common Emitter

UHF 100-500 MHz Common Emitter UHF 470 MHz General Purpose

UHF 836-960 MHz General Purpose

Pout Min (W) 30 30 30 30 30 40 40 40 40 40 60 80 100 100 100 150 3 10 10 10 25 60 70 80 100 100 100 125 50 100 2 2 3 5 5 10 10 15 15 25 1.5 45

Pin Max (W) 3 3 3 3 3 7 5 5 14 14 12 10 25 25 20 18 0.2 0.65 1 1 3.2 8 10 10 20 19 16 25 7 28.2 0.2 0.32 0.34 0.7 0.5 2 2.5 2.5 2.7 6 0.24 15

Gain Min (dB) 10 10 10 10 10 7.6 9 9 4.5 4.5 7 9 6 6 7 9.5 11.8 12 10 10 8.9 8.8 8.5 9 7 7.2 8 8.5 8.5 5.5 10 8 9.5 8.5 10 7 6 7.8 7.5 6.2 8 4.7

Vcc (V) 13.5 12.5 12.5 28 13.5 28 13.6 13.6 12.5 12.5 28 27 28 12.5 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 -50 50 50 60 --50 --12.5 12.5

η Typ (%) 55 ---55 60 55 -70 70 55 65 50 -60 70 60 50 60 50 50 60 50 60 60 55 55 60 55 55 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 60 --

Cob (pF) 95 120 120 250 95 65 95 95 200 200 80 75 150 390 220 150 4.5 12 11.5 11.5 22 70 65 80 100 120 120 70 52 100 10 15 12 19 15 26 30 50 50 70 6 100

VSWR Load 20:1 10:1 10:1 -20:1 20:1 20:1 -10:1 10:1 20:1 30:1 -10:1 30:1 20:1 30:1 -30:1 10:1 5:1 5:1 20:1 5:1 -5:1 4.5:1 -5:1 5:1 ---20:1 -20:1 --20:1 20:1 -20:1

θjc

Case Style

(°C/W) 1.2 M135 1.2 M135 1.2 M113 4.4 M135 1.2 M113 2.9 M135 1.2 M135 1.2 M113 2.2 M135 2.2 M113 2.3 M135 2 55HT-2 0.75 M174 0.65 M111 0.65 55HV-2 0.75 M174 16 55FT-2 6.4 M123 6.3 55FT-2 6.3 55FU-2 2.5 55HV-2 1.25 55HW-2 0.8 M111 0.8 55HV-2 0.7 M111 0.7 55HV-2 0.7 55JU-2 0.65 55JT-2 1.25 55JT-2 0.67 M168 35 M122 35 TO-39 35 TO-39 11.6 M122 11.6 M123 3 M122 4.7 M122 4.6 M142 4.6 M111 M111 2.5 25 Pwr Macro 1.2 M142

Part Number MS1504 MS1336 MS1337 SD1015 MS1505 SD1224 MS1506 MS1507 SD1018 SD1018-06 MS1329 VAM80 MS1204 MS1003 VMIL100 MS1281 UMIL3 MS1642P UMIL10 UMIL10P UMIL25 UMIL60 MS1511 UMIL80 MS1503 UMIL100 UMIL100A 0204-125 0105-50 MS1509 MS1402 SD1444 MS1649 MS1404 MS652S MS1426 SD1146 MS1263 SD1429-03 SD1422 MRF557 MS1455

General Purpose & Small Signal Small Signal

• Thru-hole metal cans, plastic Macro, SO-8, SOT-23 and SOT-143

• Transistors for common emitter class A operation up to 1 GHz

packages

• Device gain >10dB with NF<2.5dB at 5, 7.5, 10, 12, and 15VDC

• Applications include: PA stage for hand-held radios & low power

• Applications include: gain blocks, low noise amplifiers, and

amplifier driver stage

oscillators Freq (MHz) 100 200 200 250 250 300 300 400 500 500 500 500 500 500 500 1000 1000

Small Signal Up to 1 GHz Si Bipolar Class A Common Emitter

Freq (MHz) 1500 1200 1400 1400 1500 3000 3000 1200 1300 1400 1600 4500 4500 5000 5000 4000 6000

GNF (MHz) 20 12 13.5 13.5 12 10 12 20 14 13 15 16 18 7 11

VCE (V) 6 15 6 25 25 15 15 6 5 10 10 1.5 10 5 5 10 10

Ic (mA) 5 50 1.5 50 50 40 60 1 25 14 12 3 15 30 14 15 10

NF min (dB) 4.5 -4.5 ---2.5 -2.5 5 5.5 3 2.5 1.9 2.5 1.5 2.9

Case Style TO-72 TO-39 SOT-23 TO-39 TO-39 TO-39 TO-39 TO-72 TO-72 TO-72 TO-72 SOT-23 TO-72 Macro T Macro T TO-72 SOT-23

Part Number 2N5179 2N5109 MMBR5179LT1 MRF545 MRF544 MRF586 MRF517 2N5031 BFY90 2N6304 2N2857 BFR92ALTI MRF914 BFR91 BFR90 MRF904 MMBR911LT1

Power Devices • Transistors for common emitter class A, B, and C operation

• Thru-hole metal cans, plastic Macro, and SO-8 packages

up to 1 GHz

• Applications include: land mobile and RFS radios, wireless alarms,

• Device gain >8dB & Pout up to 4W at 7.5V and 12V

and keyless entry

• Mobile and held and mobile predriver amplifier applications Power Devices Up to 1 GHz Si Bipolar Class A/B/C Common Emitter

Freq (MHz) 175 175 175 175 175 400 400 400 470 470 870 870

Supply (V) 12.5 12.5 12.5 12.5 12.5 28 28 28 12.5 12.5 12.5 12.5

Pout (W) 1 1 1.75 3 4 1 1 1 3 2 0.75 1.5

Gain (dB) 10 17 11.5 7.8 12 10 10 10 10 8 8 8

Style

Packing

TO-39 SO-8 TO-39 TO-39 TO-39 TO-39 TO-39 SO-8 TO-39 TO-39 Pwr Macro Pwr Macro

500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk

Part Number 2N4427 SRF4427 MRF607 2N6255 SD1127 2N3866 2N3866A MRF3866 MS1649 SD1444 MRF837 MRF557

Broadcast / TV VHF TV Broadcast • 50-175MHz single ended or balanced transistors for common emitter class A & AB ope UHF TV Broadcast • 0.5-250W Psync with 28-32V Vcc

VHF TV Broadcast

• 50-225MHz single ended or balanced Si Bipolar • 50-175MHz single ended or balanced transistors for common emitterUHF class TV Broadcast transistors for common emitter class A & AB operation A & AB operation • 50-225MHz single ended or balanced Si Bipolar transistors for common emitter class A with • 0.5-150W • 0.5-150W Psync Vcc of 28VPsync with Vcc of 28V • 0.5-250W Psync with 28-32V Vcc

BROADCAST / TV

Freq

VHF TV 174-225 MHz Class A/AB Common Emitter

UHF TV 470-860 MHz Class A Common Emitter

UHF TV 470-860 MHz Class AB Common Emitter UHF 860-960 MHz Class A/AB Common Emitter

(MHz) 225 225 225 225 225 860 860 860 860 860 860 860 860

Pout Min (W) 14 20 20 100 200 0.5 1 2 4 8 12 20 100

Gain Min (dB) 14 8 7.5 11 11 10 10 10 8.5 9 8.9 8.5 8.5

(V) 28 25 28 28 32 20 20 25 25 26.5 26.5 26.5 28

860 860 860 860 860 860 860 860 960 960

0.5 1 2 4 14 25 30 150 0.9 30

9.5 10 8.5 7 8.5 9 7.5 6.5 9.5

20 20 25 25 25 25 24 28 24

MICROWAVE

Microwave

------50 45 -24

Icq

VSWR Load

(mA) 2.5 2.5 3.5 0.2 1 0.22 0.44 0.41 0.85 1.7 1.7 2.7 0.3

IMD Typ (dB) -55 -50 -50 -50 -50 -60 -60 -60 -60 -58 -52 -48 --

0.22 0.44 0.45 0.85 1.65 3.2 0.06 2x0.5 0.125

-60 -60 -60 -60 -45 -45 -60 ---

----------

-----30:1 30:1 30:1 30:1 3:01 3:01 3:01 5:01

θjc

Case Style

(°C/W) 1.5 M111 1.2 M130 1.2 M164 1.2 M168 0.45 M175 22 55FT-2 12 55FT-2 10 55FT-2 7 55FT-2 2.5 55JV-2 1.6 55JT-2 1.2 55JV-2 0.6 55RT-2

5.5 9 11 5.5 2.5 1.3 2 0.55 20

M122 M122 M122 M122 M156 M173 M142 M175 M123 M142

Part Number MS1277 MS1279 MS1280 MS1278 SD1485 UTV005 UTV010 UTV020 UTV040 UTV080 UTV120 UTV200 UTV8100B

MS1502 MS1512 MS1501 MS1581 MS1579 MS1582 MS1454 MS1533 SD1420-01 MS1453

• Si Bipolar Common Base Class C operation Each deviceand fullyglass tested to the specification • All gold •metalization passivation for high reliability and long term operation

• Each device fully tested to the specification Freq

2.3 GHz Si Bipolar Class C Common Base

η Typ (%) ------------55

• All gold metalization and passivation for high reliability and long t • Si Bipolar Common Base Class C glass operation

Cob

(V)

η Typ (%)

28 28 28 28 20 20 20

40 35 40 35 40 40 40

4 3.2 5 9.5 4 7 10

30:1 30:1 30:1 -30:1 10:1 10:1

Gain min (dB)

Vcc

Cob

VSWR Load

Pout Max (W)

Gain min (dB)

Vcc

(MHz)

Pout Min (W)

2000 2000 2000 2000 2300 2300 2300

1 1 3 3 1.5 4 7

0.125 0.2 0.47 0.5 0.24 0.63 1.1

9.5 7 8.6 7.8 8.5 8.5 8.5

Freq

Pin Max (W)

Microwave 2.0 GHz Si Bipolar Class C Common Base

Vcc

VSWR Load

(pF)

θjc

Case Style

Part Number

35 25 15 8 31 17 8.5

55BT-1 M210 55BT-1 M210 55BT-1 55BT-1 55BT-1

2001 MS3022 2003 MS2003 2301 2304 2307

θjc

Case Style

Part Number

(°C/W)

(MHz)

Pout Min (W)

(V)

η Typ (%)

1000 -1400 MHz Si Bipolar Class C Common Base

1000 - 1400 1000 - 1400

6 12

1.2 2.5

7 7.3

28 28

40 40

6.5 12

10:1 30:1

9 4.5

55LV-1 55LT-1

1014-6A 1014-12

1700-2000 MHz Si Bipolar Class C Common Base

2200 - 2300 2200 - 2400 2200 - 2500 2400 - 2470

1.7 6 3.5 25

0.25 1.2 0.5 4.4

8.5 7 8.5 7.5

22 22 24 24

35 40 40 49

--7 --

10:1 10:1 10:1 3:1

24 8 17 2.5

55LV-1 55LV-1 55LV-1 55AP-1

2223-1.7 2224-6L 2225-4L 2424-25

Microwave Broadband

(pF)

(°C/W)

Linear/Communications/Bias Linear

• Class A driver transistors for applications from

1MHz-2.3GHz and power levels from 0.25-20W

• Emitter balasted transistors are fully tested

under bias conditions for linearity, power gain,

load mismatch tolerance

2013 Short Form Catalog - Linear 2013 Short Form Catalog - Linear

Si Bipolar Class A Common Emmiter Si Bipolar Class A Common 100-500Emmiter MHz 100-500 MHz 500-1000MHz 500-1000MHz

500-1000 MHz Internal Pre-match 500-1000 MHz Internal Pre-match 1.0-2.0 GHz (Operational from DC to 2.0 GHz) 1.0-2.0 GHz (Operational from DC to 2.0 GHz) 2.0-2.3 GHz, Class A, Common Emitter (Operational from DC to 2.3 GHz) 2.0-2.3 GHz, Class A, Common Emitter (Operational from DC to 2.3 GHz)

Freq

1-500 (MHz)

Pout Min Pout (W) Min 0.5 (W)

Pin Max Pin (W) Max 0.02 (W)

Gain min Gain (dB) min 12 (dB)

1-500 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 2000 2000 2000 2000 2000 2000 2000 2000 2300 2300 2300 2300 2300 2300 2300 2300 2300 2300 2300 2300

0.5 0.5 1.5 0.5 3 1.5 6 3 6 5 20 5 20 0.11 0.5 0.11 0.8 0.5 1 0.8 1 0.3 0.5 0.3 0.8 0.5 1.7 0.8 2.5 1.7 1 2.5 1

0.02 0.08 0.2 0.08 0.5 0.2 0.95 0.5 0.95 0.5 3 0.5 3 0.012 0.1 0.012 0.15 0.1 0.2 0.15 0.2 0.03 0.07 0.03 0.14 0.07 0.34 0.14 0.6 0.34 0.16 0.6 0.16

12 9 9.5 9 9 9.5 8.5 9 8.5 10 8 10 8 9 7 9 7 7 7 7 7 10 9.5 10 9.5 9.5 7.6 9.5 6.5 7.6 10 6.5 10

Freq (MHz)

COMMUNICATIONS LINEAR

θjc θjc (°C/W)

(pF)

VSWR Load VSWR Load 30:1

2 3.8 2 7.3 3.8 10.8 7.3 10.8 16 40 16 40 2.5 2 2.5 2 2 5 2 5 2.5 2.4 2.5 3 2.4 4.8 3 6.5 4.8 3.4 6.5 3.4

30:1 30:1 30:1 30:1 6:1 30:1 10:1 6:1 10:1 30:1 30:1 30:1 30:1 20:1 30:1 20:1 6:01 30:1 15:1 6:01 15:1 9:1 6:1 9:1 10:1 6:1 6:1 10:1 10:1 6:1 30:1 10:1 30:1

Vcc

Icq

Cob

Vcc (V)

Icq (pF)

Cob (pF)

12.5 (V)

0.25 (pF)

12.5 20 20 20 20 20 20 20 20 20 20 20 20 18 20 18 20 20 18 20 18 15 20 15 20 20 20 20 20 20 15 20 15

0.25 0.14 0.22 0.14 0.44 0.22 0.88 0.44 0.88 1 2.8 1 2.8 0.05 0.14 0.05 0.18 0.14 0.22 0.18 0.22 0.1 0.12 0.1 0.14 0.12 0.27 0.14 0.42 0.27 0.2 0.42 0.2

33 (°C/W)

Case Style Case Style 55AZ-2

Part Number Part Number MPA201

33 33 29 33 12.5 29 8.3 12.5 8.3 7 1.5 7 1.5 45 33 45 33 33 17 33 17 45 35 45 35 35 16 35 11 16 30 11 30

55AZ-2 55ET-2 55FT-2 55ET-2 55FT-2 55FT-2 55FT-2 55FT-2 55FT-2 55CT-2 55AT-2 55CT-2 55AT-2 M210 55ET-2 M210 55EU-2 55ET-2 M210 55EU-2 M210 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2

MPA201 1A5 10A015 1A5 10A030 10A015 10A060 10A030 10A060 10AM05 10AM20 10AM05 10AM20 MSC80064 2A5 MSC80064 2A8 2A5 MS3011 2A8 MS3011 23A003 23A005 23A003 23A008 23A005 23A017 23A008 23A025 23A017 80143 23A025 80143

• Broadband, high power class AB linear transistor

• Broadband, power class AB linear transistor power output coveringhigh the full 500-1000MHz range Communications Linear•• Highest Broadband, high power class AB linear transistor COMMUNICATIONS LINEAR Freq

Si Bipolar Class AB Common Emitter Si Bipolar Class AB Common Emitter 500-1000 MHz

Freq (MHz)

500-1000 MHz

1000

1000 (MHz)

• Highest Pout Min Pout (W) Min 50 (W) 50

power output covering full 500-1000MHz • Highest powertheoutput covering range the full VSWR Pin Gain Vcc Icq η Load Max min Typ VSWR Pin Gain Vcc Icq η (W) (dB) (V) (pF) (%) Load Max min Typ 10 7 28 0.1 50 30:1 (W) (dB) (V) (pF) (%) 10

BIAS DEVICES

Bias Devices • Designed for use in the biasing of high power 5/26/2013 silicon transistors •5/26/2013 Feature excellent thermal tracking to provide the highest performance over the entire operating temperature range

Bias Current (A) 0.35 0.35 1 TO 0.35 1 0.35 0.35

500-1000MHz range θjc

θjc (°C/W) 1.4 (°C/W)

Case Style Case Style 55AV-2

Part Number Part Number 0510-50A

• Designed for use 30:1 in the biasing power silicon transistors 0.1 50 1.4 of high 55AV-2 0510-50A • Feature excellent thermal tracking to provide the highest performance over the entire operating temperature range

Resistance

Case Style

Part Number

(Ohm) 1 55FV BYI-1 1 Diode-Transistor 55GV SFCBYI-1F RFIS May 2013 MASTER WBG May 25.xls 1 55GU Z0-28F RFIS Diode-Transistor SFC May 2013 MASTER WBG May 25.xls 1 55FU BYI-1Z 1 55LU

Case Styles

55AP

55AR

55AT

55AV

55AW

55AY

55AZ

55BT

55CT

55CX

55ET

55FT

55FU

55FW

55HT

55HV

55HW

55HX

55JT

55JU

55JV

55KT

55KS

55KV

55LT

55LU

55LV

55QM

55QX

55QZ

55RT

55SM

55ST

55SW

55TU

Case Styles

M102

M103

M105

M106

M111

M112

M113

M115

M122

M123

M138

M142

M156

M130

M135

M164

M168

M173

M174

M175

M177

M198

M208

M210

M214

M216

M218

M220

M222

Macro T

Macro X

Power Macro SO-8

TO-247

TO-39

TO-72

Notes

Diode Products:

Power Transistor Products:

Microsemi Corporation

RF Integrated Solutions

75 Technology Drive

3000 Oakmead Village Drive

Lowell, MA 01851-5293

Santa Clara, CA 95051-0808

+1.978.442.5600

+1.408.986.8031

+1.978.937.3748

+1.408.986.8120

www.microsemi.com email: sales.support@microsemi.com

Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 email: sales.support@microsemi.com www.microsemi.com

Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.

©2013 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. MS4-009-13