L14F1

Page 1

HERMETIC SILICON PHOTODARLINGTON L14F1

L14F2

PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.95) 0.178 (4.52)

0.255 (6.47) 0.225 (5.71)

0.030 (0.76) NOM

0.500 (12.7) MIN

0.100 (2.54)

SCHEMATIC

0.050 (1.27)

(CONNECTED TO CASE) COLLECTOR 3

2 1

3

0.038 (0.97) 0.046 (1.16) 0.036 (0.92)

Ø0.020 (0.51) 3X

BASE 2

45°

NOTES:

1 EMITTER

1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.

DESCRIPTION The L14F1/L14F2 are silicon photodarlingtons mounted in a narrow angle, TO-18 package.

FEATURES • Hermetically sealed package • Narrow reception angle

 2001 Fairchild Semiconductor Corporation DS300306 6/01/01

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HERMETIC SILICON PHOTODARLINGTON L14F1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25°C)(1) Power Dissipation (TC = 25°C)(2)

L14F2

(TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD

Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 25 25 12 300 600

Unit °C °C °C °C V V V mW mW

NOTE: 1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient. 2. Derate power dissipation linearly 6.00 mW/°C above 25°C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16” (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 0.05 mW/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 0.2 mW/cm2.

ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER

Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14F1 On-State Collector Current L14F2 Rise Time Fall Time

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(TA =25°C) (All measurements made under pulse conditions)

TEST CONDITIONS

SYMBOL

MIN

IC = 10 mA, Ee = 0 IE = 100 µA, Ee = 0 IC = 100 µA, Ee = 0 VCE = 12 V, Ee = 0

BVCEO BVEBO BVCBO ICEO θ IC(ON) IC(ON) tr tf

25 12 25 —

Ee = .125 mW/cm2, VCE = 5 V(7) Ee = .125 mW/cm2, VCE = 5 V(7) IC = 10 mA, VCC = 5 V, RL =100 Ω IC = 10 mA, VCC = 5 V, RL =100 Ω

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TYP

MAX

UNITS

— — — 100

V V V nA Degrees mA mA µs µs

±8 7.5 2.5

— 300 250

6/01/01

DS300306


HERMETIC SILICON PHOTODARLINGTON L14F1

Figure 2. Relative Light Current vs. Ambient Temperature

Figure 1. Light Current vs. Collector to Emitter Voltage 5.0 mW/cm2

IL / IL @25°C, RELATIVE LIGHT CURRENT

IL, NORMALIZED LIGHT CURRENT

100

2.0 1.0

10

.5 .2 1.0

.1 .05

NORMALIZED TO: VCE = 5 V Ee = .2 mW/cm2

0.1 0

5

10

15

20

25

30

10 8 6 4 2 1.0 .8 .6 .4 .2 .1 .08 .06 .04

VCE = 5 V H = .2 mW/cm2

.02 .01 -50

35

-25

0

0.9

100

0.8

90

0.7 0.6 0.5 0.4 0.3

60 50 40 30 20 10

800

900

1000

125

70

0.1 700

100

80

0.2

600

75

Figure 4. Angular Response 110

RELATIVE AMPLITUDE

RELATIVE SPECTRAL RESPONSE

Figure 3. Spectral Response 1.0

500

50

25

T, TEMPERATURE (°C)

VCE , COLLECTOR TO EMITTER VOLTAGE (V)

0 400

L14F2

1100

0 -90°

1200

-70°

-30°

-50°

λ, WAVE LENGTH (NANOMETERS)

10°

-10°

50°

30°

70°

90°

DEGREES

Figure 6. Light Current vs. Relative Switching Speed 100 VCC

OUTPUT PULSE

INPUT LED56

10%

LED td

RL

OUTPUT

tf tr

ts

IL, LIGHT CURRENT (mA)

90%

L14F

I

LOAD RESISTANCE 10 Ω

1.0 V

100 Ω

10

1000 Ω

1.0

INPUT PULSE tOFF = ts + tf tON = td + tr

NORMALIZED TO: RL = 100 Ω IL = 10 mA

VCC = 10 V 0.1 0.01

Figure 5. Test Circuit and Voltage Waveforms

0.1

1.0

10

100

RELATIVE SWITCHING SPEED td + tr + ts + tf

DS300306

6/01/01

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HERMETIC SILICON PHOTODARLINGTON L14F1

L14F2

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user.

DS300306

6/01/01

2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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