Next Generation Memory Market by Technology - Global Forecast to 2013-2020 January 2015
MARKET INSIGHTS The global next generation memory market is witnessing a very high growth rate as the need for advanced high density memories that can cater to the needs of the ever evolving complex computing systems is increasing. Over the last decade, the need for highly scalable memory solutions with low power dissipation levels has triggered the demand for next generation memory technologies that can sustain very high data rates at relatively lesser power levels. FAST FACTS  Characteristics such as high write and read latency, high scalability, and high endurance levels, among others, make the emerging next generation memories welcome replacements for traditional non-volatile memories.
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PRODUCT SEGMENTS  Next generation memory technologies covered in this report are the non-volatile next generation memory technologies such as Memristor or Resistive Random Access Memory (ReRAM), Phase Change Memory (PCM), Magneto-resistive Random Access Memory (MRAM), and Ferroelectric Random Access Memory (FeRAM), among other technologies. Emerging volatile next generation memory technologies included in the report are Static Random Access Memory (SRAM) and Dynamic Random Access Memory (DRAM), which include Synchronous DRAM (SDRAM), mobile DRAM, and other emerging DRAM technologies. DID YOU KNOW?  Out of these memories, only MRAM and FeRAM account for a reasonable market share and they are fairly commercialized in the market.
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REPORT COVERAGE The report encompasses detailed analysis of the next generation memory market for a period spanning 2013-2020 This report analyzes the findings by considering the market dynamics that shape it. These dynamics are categorized under three headers: Drivers Restraints Opportunities
The report also presents detailed profiles of various companies that are currently active in the next generation memory market In addition to the company profiles, the report does provide a Competitive Landscape (CL) of the key players for each product segment
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GAIN A COMPETITIVE EDGE  Gain a better understanding about the market share analysis, mergers and acquisitions, collaborations, partnerships, new product developments, and the key growth strategies of each player  The entire value chain of the next generation memory market has been covered under the study, which reveals actionable insights of the various players in the value chain Want to know more? You are just a click away!
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KEY VENDORS IN THE MARKET SanDisk Corporation (U.S.) Toshiba Corporation (Japan) Intel Corporation (U.S.) Micron Technology, Inc. (U.S.) Adesto Technologies Corporation, Inc. (U.S.) Fujitsu Ltd. (Japan) SK Hynix Semiconductor, Inc. (South Korea) Samsung Electronics Co., Ltd. (South Korea) Cypress Semiconductor Corporation (U.S.) IBM (U.S.)
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KEY REGIONS COVERED IN THE STUDY Americas Europe APAC ROW
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TABLE OF CONTENTS Introduction Research Methodology Executive Summary Premium Insights Market Overview Industry Trends Next-Generation Semiconductor Memory Market, By Technology Market Analysis, By Application Next-Generation Memory Market, By Application Geographic Analysis
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TABLE OF CONTENTS Competitive Landscape Company Profiles Appendix
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REPORT DETAILS Publish date: Jan 23, 2015 Number of slides: 192 Geographic coverage: Global Available format: PDF, CD, Hardcopy Price for Single User License: USD 4,650 Price for Site License: USD 7,150 Price for Global User License: USD 9,000 Delivery Time: Within 1 business day Payment Modes: Credit/Debit Card, RTGS/Wire Transfer, Google Wallet, PayPal
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