STD10PF06
P - CHANNEL 60V - 0.18 Ω - 10A TO-252 STripFET POWER MOSFET TYPE STD10PF06 ■ ■ ■ ■ ■
■
V DSS
R DS(o n)
ID
60 V
< 0.20 Ω
10 A
TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
3 1
DPAK TO-252 (Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS ■ MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
60
V
Drain- gate Voltage (R GS = 20 kΩ)
60
V
± 20
V
Gate-source Voltage o
ID
Drain Current (continuous) at Tc = 25 C
10
A
ID
Drain Current (continuous) at Tc = 100 oC
7
A
Drain Current (pulsed)
40
A
40
W
0.27
W /o C
6
V/ns
I DM (•) P tot
o
Total Dissipation at T c = 25 C Derating F actor
dv/dt T st g Tj
Peak Diode Recovery voltage slope Storage T emperature Max. Operating Junction Temperature
-65 to 175
o
C
175
o
C
(•) Pulse width limited by safe operating area ( 1) ISD ≤ 10 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
April 1999
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STD10PF06 THERMAL DATA R thj -case R thj -amb R thc-sink Tl
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature F or Soldering Purpose
Max Max T yp
o
3.75 100 1.5 275
C/W C/W o C/W o C o
AVALANCHE CHARACTERISTICS Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max)
10
A
E AS
Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 25V)
50
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS
Parameter Drain-source Breakdown Voltage
Test Con ditions I D = 250 µA
V GS = 0
I DSS
V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage Current (VDS = 0)
Min.
Typ.
Max.
60
Unit V
T c = 125 oC
V GS = ± 20 V
1 10
µA µA
± 100
nA
Max.
Unit
ON (∗) Symbo l
Parameter
Test Con ditions ID = 250 µA
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On Resistance
V GS = 10V
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x V GS = 10 V
Min. 2
ID = 5 A
Typ. 3.4
4
V
0.18
0.20
Ω
10
A
DYNAMIC Symbo l g f s (∗) C iss C os s C rss
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Parameter
Test Con ditions
Forward Transconductance
V DS > ID(o n) x R DS(on )ma x
ID = 5 A
Input Capacitance Output Capacitance Reverse Transfer Capacitance
V DS = 25 V
V GS = 0
f = 1 MHz
Min.
Typ.
Max.
Unit
2
5
S
850 230 75
pF pF pF
STD10PF06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t d(on) tr
Turn-on Delay T ime Rise Time
V DD = 30 V ID = 6 A R G = 4.7 Ω V GS = 10 V (Resistive Load, see fig. 3)
20 40
Qg Q gs Q gd
Total G ate Charge Gate-Source Charge Gate-Drain Charge
V DD = 48 V ID = 12 A V GS = 10 V
16 4 6
21
nC nC nC
Typ.
Max.
Unit
ns ns
SWITCHING OFF Symbo l
Parameter
Test Con ditions
Min.
t d(of f) tf
Turn-off Delay T ime Fall T ime
V DD = 30 V ID = 6 A V GS = 10 V R G = 4.7 Ω (Resistive Load, see fig. 3)
40 10
ns ns
tr (Voff) tf tc
Off-voltage Rise T ime Fall T ime Cross-over Time
V DD = 48 V I D = 12 A V GS = 10 V R G = 4.7 Ω (Induct ive Load, see fig. 5)
10 17 30
ns ns ns
SOURCE DRAIN DIODE Symbo l
Parameter
Test Con ditions
ISD I SDM (•)
Source-drain Current Source-drain Current (pulsed)
V SD (∗)
Forward On Voltage
I SD = 10 A
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
I SD = 12 A di/dt = 100 A/µs T j = 150 o C V DD = 30 V (see test circuit, fig. 5)
t rr Q rr I RRM
Min.
Typ.
V GS = 0
Max.
Unit
10 40
A A
2.5
V
100
ns
260
µC
5.2
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STD10PF06 Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STD10PF06 Normalized Gate Threshold Voltage vs Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STD10PF06 Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STD10PF06
TO-252 (DPAK) MECHANICAL DATA mm
DIM. MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL ”A”
L2
D
=
1
=
G
2
= =
=
E =
B2
3
B
DETAIL ”A”
L4
0068772-B
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STD10PF06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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