Vishay Intertechnology, Inc.
Low-and MediumVoltage N-Channel MOSFETs
DUAL SIDE COOLING High-Performance MOSFETs from 40 V to 100 V
PowerPAK速 SC-70 PowerPAK速 SC-75 Ultra-Compact Thermally Enhanced Packages
ThunderFET速 High-Performance MOSFETs from 80 V to 250 V
TrenchFET速 GEN IV High-Performance MOSFETs from 30 V to 80 V
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V I S H AY I N T E R T E C H N O L O G Y, I N C .
LOW-AND MEDIUM-VOLTAGE N-CHANNEL MOSFETs Focus Products Single N-Channel MOSFETs, 30 V to 80 V VDS (V)
RDS (ON) (Ω) Max.
Qg (nC)
TO-220
D2PAK (TO-263)
Dual Cool
LITTLE FOOT®
PowerPAK® SO-8
SO-8L
1212-8
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
30
0.001
0.00135
147
66
SiRA00DP
30
0.002
0.0027
78
34.3
SiRA02DP
30
0.0021
0.00286
43
19.7
SiRA64DP
30
0.00215
0.0031
51
22.5
SiRA04DP
SiSA04DN
30
0.0023
0.0031
44
19.2
SiRA66DP
SiSA66DN
30
0.0025
0.0035
51
22.5
SiRA06DP
SiS476DN
30
0.0034
0.0044
51
22.5
30
0.0037
0.005
34
15.4
SiRA10DP
SiSA10DN
30
0.0043
0.006
29.5
13.6
SiRA12DP
SiSA12ADN
30
0.0051
0.0085
19.4
9.4
SiRA14DP
30
0.0064
0.0085
25.2
11.5
30
0.0067
0.0098
16.7
8
SiRA34DP
SiSA34DN
30
0.0075
0.012
14.3
6.9
SiRA18DP
SiSA18ADN / SiS322DNTa
SiRA18ADP
SC-70
SO-8
TSOP-6
VGS = 4.5 V
30
0.0087
0.0135
14.3
6.9
40
0.00088
0.00116
136
63
40
0.0014
0.00162
72.5
40
0.00135
0.00175
121
40
0.0016
0.0021
150
Si4010DY
SiSA14DN Si5446DUg
SiR638DP SUM40010EL SiJ438DP
58 SUP40010EL
40
0.0017
0.0023
97.5
47.5
SiRA52DP
40
0.00235
0.0032
69
32
SiRA54DP
SiJA52DP Si4038DY
40
0.0024
0.0032
58
28
40
0.00235
0.0032
69
32
40
0.00265
0.0036
50
23
SiRA58DP
40
0.0027
0.004
47
21.3
SiR644DP
40
0.0055
0.0075
21.3
9.8
40
0.0066
60
0.0015
60
0.0023
60 60
SiJA54DP SiSS10DNb SiS488DN SiDR638DPj
53.5 63
SiR626DPj
0.0028
126
SUP50020EL SUM50020EL
0.0035
0.006
44
20.5
0.0042
0.0069
40
18.8
60
0.0048
0.0078
42
18.5
SiR670DP
60
0.006
0.0095
26
12
SiR664DP
60
0.008
0.0125
20.8
9.3
80
0.0032
72
80
0.0032
94
80
0.0034
94
80
0.0059
0.0085
49
23
SiR880DP
80
0.0055
0.0087
57
25
SiR826ADP
80
0.0063
0.0089
47.5
24
SiR880ADP
80
0.0062
0.0095
47
24
SiJ482DP
80
0.008
0.0115
35.5
17.1
SiJ478DP
80
0.0195
0.032
18.1
8.7
80
0.093
0.126
4.9
2.6
100
0.0038
76
100
0.004
76
100
0.0048
60
100
0.0056
53.5
100
0.0058
53.5
100
0.0066
SiR688DP Si4062DY
SiJ462DP SiR680DPj SUM60030E SUP60030E
SiS468DN Si3476DV SUM70040Mc SUP70040E
SUM70040E SiR668DPj SUM70060E
SUP70060E SiDR870ADPj
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V I S H AY I N T E R T E C H N O L O G Y, I N C .
LOW-AND MEDIUM-VOLTAGE N-CHANNEL MOSFETs Focus Products Single N-Channel MOSFETs, 30 V to 80 V VDS (V)
RDS (ON) (Ω) Max.
Qg (nC)
D2PAK (TO-263)
TO-220
SO-8
SO-8L
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
VGS = 4.5 V
100
0.0066
0.0105
53.5
25.2
SiR870ADP
100
0.0078
44
26.7
SiR846ADP
100
0.0087
0.0115
39.5
19.5
SiR882ADP
100
0.0088
0.012
44.4
20.7
100
0.0089
33
100
0.0091
36.9
100
0.0093
33
LITTLE FOOT®
PowerPAK®
Dual Cool
1212-8
SC-70
SO-8
TSOP-6
Si4190ADY SUM70090E / SUP70090E SUD70090Ee SiJ470DP SUA70090Ed
100
0.01
45.6
27.9
100
0.0108
0.0145
32.8
16.3
SiR876ADP
Si4090DY
100
0.014
0.018
27.9
13.9
SiR878ADP
100
0.0162
24.3
100
0.021
16
SiR606DP SiSS40DNb
10
100
0.023
0.031
19.6
9.7
100
0.0235
0.0315
19.1
9.5
100
0.026
0.033
12
5.8
100
0.033
0.047
12.8
6.1
Si7456DDP
Si4056DY SiS890DN Si4058DY
Si7454DDP
SiS892ADN SiA416DJ
100
0.083
0.13
6.5
3.5
100
0.126
0.189
5.2
3.9
Si3474DV
100
0.126
0.189
5.2
2.9
Si2392ADSh
100
0.185
0.31
3.3
1.8
100
0.2
0.32
3.3
1.8
125
0.0115
SiB456DKf Si1480DH SiR696DP
24.8 SUM80090E
150
0.009
63
150
0.0094
63
150
0.0177
20.7
150
0.058
9.5
150
0.177
5.3
200
0.017
64
200
0.03
31.5
SiR690DP
200
0.0505
23.7
SiR616DP
200
0.06
19.5
SiR624DP
200
0.095
14.2
SiR618DP
200
0.105
12.1
250
0.032
60
250
0.06
20
Note: a. Thin PowerPAK® 1212-8 b. PowerPAK® 1212-8S
SUP80090E SiR622DP SiS888DNb SiA446DJ SUP90140E
SUM90140E
SiSS98DNb SUP10250E
SUM10250E SiR692DPj
c. 7-leaded D2PAK d. Thin-lead TO-220 FULLPAK
e. DPAK (TO-252) f. PowerPAK® SC-75
g. PowerPAK® ChipFET h. SOT-23
i. SC70-6 j. Target specification
Dual N-Channel MOSFETs and N & P Complementary MOSFETs Approximate Footprint
Package
PowerPAK® SO-8
5x6
RDS(on) (Ω)
Qg (nC)
Part Number
Configurations
VDS (V)
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
SiRB40DP
Dual
40
0.00325
0.0042
61.8
Si7252DP
Dual
100
0.017
17.5
Si7946ADP
Dual
150
0.186
5.3
100
0.085
5.2
PowerPAK® 1212-8
3x3
SiS990DN
Dual
SO-8
5x6
Si4590DY
N&P
100
0.057
0.072
7.5
-100
0.183
0.205
24
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LATEST TECHNOLOGIES PROVIDE GREATER THAN 50 % LOWER ON-RESISTANCE COMPARED TO PREVIOUS GENERATION Advantages of Vishay Siliconix Low-and MediumVoltage N-Channel MOSFETs • 30 % lower RDS(on) x Qg FOM enables lower power losses than previous generation • Exceptionally low Qgd / Qgs ratios enhance immunity to shoot-through • Includes thermally enhanced PowerPAK® packaging for increased power densities • A wide range of compact package sizes for optimization in a variety of applications
For the Following Applications • • • •
DC/DC converters DC/AC inverters Synchronous rectification ORing, eFuse
An extensive range of solutions to achieve high efficiency and reliability
Providing high-performance, thermally enhanced power stage solutions for today’s power conversion topologies
Useful Links • www.vishay.com/mosfets/trenchfet-gen-iv/ • www.vishay.com/mosfets/medium-voltage/
Facts • Vishay’s n-channel MOSFETs with optimized RDS(on), Qgd, and QOSS increase efficiency by balancing conduction and switching power losses • Vishay is your true one-stop shop for building blocks in power conversion by providing high-performance MOSFETs from 30 V to 650 V and power passive components A WORLD OF
SOLUTIONS
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VMN-MS7295-1701