Making Nanoelectronic Devices More Energy Efficient

Electrical engineer Huamin Li is investigating a novel transistor concept that can switch speed faster and use less energy. The project is funded by a CAREER award from the National Science Foundation.

Huamin Li

Li’s project “Toward sub-60-mV/decade steep transistors using Dirac-source carrier injection and high-mobility 2D monochalcogenides” is important because it seeks to find an innovative solution to address the need for energy-efficient nanoelectronic devices. It also explores the untapped potential of emerging two-dimensional source and channel materials such as graphene, and represents a major breakthrough in quantum science and technology for extending Moore’s law well into the quantum era.

Such technologies are of great interest, as they hold promise for overcoming limitations that may prevent further miniaturization of conventional transistors.

Li’s team will combine theoretical research with experiments to learn about the properties of the 2D materials and use them to build a prototypical transistor.

With the support of his CAREER award, Li will also participate in existing programs and develop new activities that seek to inspire the next generation of students to pursue careers in engineering. This includes working with UB and community partners to create educational activities that focus on nanoscience and nanotechnology. The project is funded at $500,000 for five years.

The NSF CAREER Award is given to outstanding scientists who exemplify the role of teacher-scholars through research, education, and the integration of education and research.