n Outline Drawing
IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current)
n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply
n Equivalent Circuit
n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque
( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *1
Ratings 600 ± 20 200 400 200 400 780 +150 -40 ∼ +125 2500 3.5 3.5
Units V V A W °C °C V Nm
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
• Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time
( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr
Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=200mA VGE=15V IC=200A VGE=0V VCE=10V f=1MHz VCC=300V IC=200A VGE=± 15V RG=9.1Ω IF=200A VGE=0V IF=200A
Min.
Symbols Rth(j-c) Rth(j-c) Rth(c-f)
Test Conditions IGBT Diode With Thermal Compound
Min.
Typ.
4.5 13200 2930 1330 0.6 0.2 0.6 0.2
Max. 2.0 30 7.5 2.8
Units mA µA V V pF
1.2 0.6 1.0 0.35 3.0 300
µs V ns
• Thermal Characteristics Items Thermal Resistance
Typ.
0.025
Max. 0.16 0.35
Units °C/W
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T j=125°C
T j=25°C 500
500 V GE =20V,15V,12V
V GE =20V,15V,12V 400 C
300
Collector current : I
Collector current : I
C
[A]
[A]
400
10V
200
100
300
10V
200
100 8V 8V
0
0 0
1
2
3
4
5
6
0
3
4
5
6
Collector-Emitter vs. Gate-Emitter voltage
Collector-Emitter vs. Gate-Emitter voltage
T j=25°C
T j=125°C
CE
[V]
10
[V]
8
Collector-Emitter voltage : V
CE
Collector-Emitter voltage : V
2
Collector-Emitter voltage : V CE [V]
10
6
IC=
4
400A 200A 100A
2
0
8
6
IC=
4
400A 200A
2
100A 0
0
5
10
15
20
25
0
Gate-Emitter voltage : V GE [V]
5
10
15
20
25
Gate-Emitter voltage : V GE [V]
Switching time vs. Collector current
Switching time vs. Collector current
V CC =300V, R G =9.1 Ω , V GE =±15V, T j=25°C
V CC =300V, R G =9.1 Ω , V GE =±15V, Tj=125°C 1000
, t r , t off , t f [nsec]
t on t off tr
on
tf
tr tf
100
Switching time : t
Switching time : t
100
t off t on
, t r , t off , t f [nsec]
1000
on
1
Collector-Emitter voltage : V CE [V]
10
10 0
100
200
Collector current : I C [A]
300
0
100
200
Collector current : I C [A]
300
Switching time vs. R G
Dynamic input characteristics T j=25°C
V CC =300V, I C =200A, V GE =±15V, T j=25°C
CE
tr
Collector-Emitter voltage : V
Switching time : t
[V]
t on t off
1000
tf
on
, t r , t off , t f [nsec]
500
100
10
25 V CC =200V
400
300V 20 400V
300
15
200
10
100
5
0 1200
0 1
10
0
200
400
600
800
1000
Gate resistance : R G [ Ω ]
Gate charge : Q G [nC]
Forward current vs. Forward voltage
Reverse recovery characteristics
V GE = O V
t rr , I rr vs. I F
T j=125°C 25°C rr
[A]
[A]
400
rr [nsec]
500
I rr 125°C
200
100
:t
100 I rr 25°C
Reverse recovery time
Reverse recovery current : I
Forward current : I
F
t rr 125°C 300
0
t rr 25°C
10 0
1
2
3
4
0
100
200
300
Forward voltage : V F [V]
Forward current : I F [A]
Transient thermal resistance
+V GE =15V, -V GE <15V, T j<125°C, R G >9.1 Ω
Reversed biased safe operating area 2000
[A]
1600
C
IGBT 0,1
Collector current : I
Thermal resistance : R
th(j-c)
[°C/W]
Diode
SCSOA
1200
(non-repetitive pulse)
800
400 0,01 RBSOA (Repetitive pulse) 0 0,001
0,01
0,1
Pulse width : PW [sec]
1
0
100
200
300
400
500
Collector-Emitter voltage : V CE [V]
600
Capacitance vs. Collector-Emitter voltage
Switching loss vs. Collector current
T j=25°C
V CC=300V, R G =9.1 Ω , V GE =±15V
, C oes , C res [nF]
E off 125°C 15 E off 25°C
E on 125°C E on 25°C 5 E rr 125°C E rr 25°C
0 0
100
200
300
C ies
10
ies
10
Capacitance : C
Switching loss : E
on
, E off , E rr [mJ/cycle]
20
400
C oes 1 C res
0
Collector Current : I C [A]
5
10
15
20
25
30
35
Collector-Emitter Voltage : V CE [V]
Fuji Electric GmbH
Fuji Electric (UK) Ltd.
Lyoner Straße 26
Commonwealth House 2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M
London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56
Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60
Specification is subject to change without notice
May 97
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