BAR74 Silicon Switching Diode
3
For high-speed switching applications
2 1 1
VPS05161
3 EHA07002
Type
Marking
BAR74
JBs
Pin Configuration 1=A
2 = n.c.
Package
3=C
SOT23
Maximum Ratings Parameter
Symbol
Diode reverse voltage
VR
50
Peak reverse voltage
VRM
50
Forward current
IF
250
mA
Surge forward current, t = 1 s
IFS
4.5
A
Total power dissipation, TS = 54 째C
Ptot
370
mW
Junction temperature
Tj
150
째C
Storage temperature
Tstg
Value
Unit V
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
260
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jul-27-2001
BAR74
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values
Unit
min.
typ.
max.
50
-
-
VF
-
-
1
IR
-
-
0.1
IR
-
-
100
CD
-
-
2
pF
t rr
-
-
4
ns
DC characteristics Breakdown voltage
V(BR)
V
I(BR) = 100 µA Forward voltage IF = 100 mA Reverse current
µA
VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 20 MHz Reverse recovery time
I F = 10 mA, IR = 10 mA, R L = 100 , measured at IR = 1mA
Test circuit for reverse recovery time D.U.T.
ΙF
Oscillograph
EHN00015
Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50
Oscillograph: R = 50 , tr = 0.35ns, C 1pF
2
Jul-27-2001
BAR74
Forward current IF = f (TS )
Reverse current IR = f (TA)
BAR 74
10 5
300
EHB00012
nA mA
ΙR
V R = 70 V
10 4 5
150
10 3
max.
IF
200
70V
25V
5 100
typ.
10 2 5
50
0 0
15
30
45
60
75
90 105 120 °C
10 1
150
0
100
50
TS
Peak forward current IFM = f (t p)
TA = 25°C
TA = 25°C
ΙF
BAR 74
150
TA
Forward current IF = f (VF )
150
˚C
EHB00013
10 2
Ι FM
mA
BAR 74
EHB00014
D = 0.005 0.01 0.02 0.05 0.1 0.2
A 10 1
100
typ
max
10 0
50
10 -1
tp
D=
tp T
T 0
0
0.5
1.0
V
10-2 10-6
1.5
VF
10-5
10-4
10-3
10-2
10-1 s 100
t
3
Jul-27-2001
BAR74
Forward voltage VF = f (TA)
1.0
BAR 74
V
EHB00015
Ι F = 100 mA
VF
10 mA
1 mA 0.5 0.1 mA
0
0
50
100
˚C
150
TA
4
Jul-27-2001
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