MITSUBISHI TRANSISTOR MODULES
QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE
QM600HD-M
• • • •
IC Collector current ........................ 600A VCEX Collector-emitter voltage ........... 350V hFE DC current gain............................. 500 Non-Insulated Type
APPLICATION Robotics, Forklifts, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 φ5.5
C
E
48
B 62
E
22
20
80
E
8 B
17
BX
E BX
14
12
22
25
M4
5.5
8
21
LABEL
27
M6
25
64
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS Symbol
(Tj=25°C, unless otherwise noted) Ratings
Unit
VCEX (SUS)
Collector-emitter voltage
IC=1A, VEB=2V
Conditions
350
V
VCEX
Collector-emitter voltage
VEB=2V
350
V
VCBO
Collector-base voltage
Emitter open
400
V
VEBO
Emitter-base voltage
Collector open
10
V
IC
Collector current
DC
600
A
–IC
Collector reverse current
DC (forward diode current)
PC
Collector dissipation
TC=25°C
IB
Base current
–ICSM
Surge collector reverse current (forward diode current)
Tj Tstg Viso
Isolation voltage
Parameter
—
A
2080
W
DC
15
A
Peak value of one cycle of 60Hz (half wave)
—
A
Junction temperature
–40~+150
°C
Storage temperature
–40~+125
°C
Charged part to case, AC for 1 minute Main terminal screw M6
Mounting screw M5 —
Mounting torque B(E) terminal screw M4
BX terminal screw M4 —
Typical value
Weight
ELECTRICAL CHARACTERISTICS
—
V
1.96~2.94
N·m
20~30
kg·cm
1.47~1.96
N·m
15~20
kg·cm
0.98~1.47
N·m
10~15
kg·cm
0.98~1.47
N·m
10~15
kg·cm
420
g
(Tj=25°C, unless otherwise noted) Limits
Symbol
Test conditions
Parameter
Min.
Typ.
Max.
Unit
ICEX
Collector cutoff current
VCE=350V, VEB=2V
—
—
2.0
mA
ICBO
Collector cutoff current
VCB=400V, Emitter open
—
—
2.0
mA
IEBO
Emitter cutoff current
VEB=10V
—
—
800
mA
VCE (sat)
Collector-emitter saturation voltage
—
—
2.0
V
VBE (sat)
Base-emitter saturation voltage
—
—
2.5
V
–VCEO
Collector-emitter reverse voltage
–IC=600A (diode forward voltage)
—
—
—
V
hFE
DC current gain
IC=600A, VCE=2V
500
—
—
—
—
—
3.0
µs
Switching time
VCC=200V, IC=600A, IB1=2A, –IB2=4A
—
—
15
µs
—
—
3.0
µs
Transistor part
—
—
0.06
°C/ W
Diode part
—
—
—
°C/ W
Conductive grease applied
—
—
0.05
°C/ W
IC=600A, IB=1.2A
ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f)
Thermal resistance (junction to case) Contact thermal resistance (case to fin)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE
PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
1000 1.0A
DC CURRENT GAIN hFE
IB=2.0A
800
0.4A 600
0.2A
400
0.08A
200
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
10 –1 7 5 4 3 2 1.4
1.6
1.8
2.0
BASE-EMITTER VOLTAGE
2.2
10 1 7 5 4 3 2 10 0 7 5 4 3 2
VCE(sat)
10 –1 10 1
IC=600A 2
1 IC=400A
0 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 2 3 4 5 7 10 1
BASE CURRENT IB (A)
IB=1.2A Tj=25°C Tj=125°C 2 3 4 5 7 10 2
2 3 4 5 7 10 3
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (µs)
3
2 3 4 5 7 10 3
COLLECTOR CURRENT IC (A)
SWITCHING TIME
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
Tj=25°C Tj=125°C
710 2
VBE(sat)
VBE (V)
5
IC=200A
2 3 45
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL)
4
VCE=2.0V Tj=25°C Tj=125°C
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
BASE CURRENT IB (A)
VCE=2.0V Tj=25°C
10 –2 1.2
10 3 7 5 4 3 2
VCE (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2
10 4 7 5 4 3 2
10 2 10 1
5
SATURATION VOLTAGE
COLLECTOR CURRENT IC (A)
Tj=25°C
10 2 7 5 3 2 10 1 ts 7 5 3 2
VCC=200V IB1=2.0A –IB2=4.0A
tf
10 0 Tj=25°C ton 7 Tj=125°C 5 3 2 10 –1 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 2 3 4 5 7 10 4
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA 2000 COLLECTOR CURRENT IC (A)
SWITCHING TIME
ts, tf (µs)
3 2 ts 10 1 7 5 4 3 2 10 0 7 5 4 3
tf VCC=200V IB1=2A IC=600A Tj=25°C Tj=125°C 3 4 5 7 10 0
2 3 4 5 7 10 1
1600 1400 1200
BASE REVERSE CURRENT –IB2 (A)
600 400 200 200
300
400
500 VCE (V)
DERATING FACTOR OF F. B. S. O. A.
s 1m s m
10
C TC =25°C NON–REPETITIVE
SECOND BREAKDOWN AREA
80 70 60 50
COLLECTOR DISSIPATION
40 30 20 10
10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE
DERATING FACTOR (%)
tw=100µs
D
COLLECTOR CURRENT IC (A)
100
90
10 2 7 5 3 2
0
COLLECTOR-EMITTER VOLTAGE
100
10 3 7 5 3 2
6A
800
FORWARD BIAS SAFE OPERATING AREA 10 4 7 5 3 2
–IB2=4A
1000
0
2 3
Tj=125°C
1800
VCE (V)
0
0
20
40
60
80 100 120 140 160
CASE TEMPERATURE
TC (°C)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 0.08 0.07
Zth (j–c) (°C/ W)
0.06 0.05 0.04 0.03 0.02 0.01 0 10 –3 2 3 4 5 710 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s)
Feb.1999