Global GaN Power Device Market - Trends and Forecast to 2025 Gallium nitride (GaN) compound is a hard semiconductor material featuring a wide band gap (energy gap) of 3.4 electronvolts (eV) with high heat capacity and thermal conductivity. GaN finds significant applications in power devices used in electrical energy control systems and conversions including telecommunication, industrial, automotive, and high RF antennas and radar in aerospace and defense technologies are expected to provide opportunities for growth of the GaN market over the forecast period. Request Sample Copy Of This Report: https://www.coherentmarketinsights.com/insight/request-sample/1221 High energy efficiency loss in power devices is primarily attributed to conduction losses due to high device resistance and switching transitions. GaN materials prevent such energy loss, as they are featured with high breakdown voltage and low conduction resistance, in turn enabling high-speed switching operations. GaN thus is used to ensure high efficiency of operations in electrical systems. Moreover, low conduction resistance of GaN, allows the material compound to sustain high energy application in compact sizes, enabling higher miniaturization of the circuits. These significant benefits of GaN over other alternatives such as silicon transistors that feature relatively larger chip area to enhance their conductivity, are expected to fuel the overall GaN power device market. Substantial growth of end-use verticals is expected to boost market growth Advancements in technology related to GaN power devices are enhancing the computational power of all systems, in turn boosting market growth. For instance, in December 2017, Yuji Zhao, an electrical and computer expert from Arizona State University received a three year grant of US$ 750,000 from National Aeronautics and Space Administration’s (NASA) Hot Operating Temperature Technology (HOTTech) program for the gallium nitride processor for applications in space. In January 2018, Corsair introduced Corsair AX1600i featuring off-the shelf efficiency, ripple suppression, noise levels, voltage regulation, and highly compact power supply unit. These two instances of technological developments are primarily based on the utilization of Gallium Nitride based materials. replacing Silicon transistors as prominently used material in the switching devices. Ask For Discount: https://www.coherentmarketinsights.com/insight/request-discount/1221
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