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J. Comp. & Math. Sci. Vol.3 (4), 422-424 (2012)

TCR, Effect of Thickness and Conductivity of Electrically Conducting Thin Film for Nano Electronics Applications S. SAKTHIVEL1 and D. MANGALARAJ2 1

Thinfilm Physics and Nano Science Laboratories , PG & Research Department of Physics, Rajah Serfoji Govt. College, Thanjavur -613 005, Tamilnadu, INDIA. 2 Department of Nano Science and Nano Technology, Bharathiar University, Coimbatore - 641 046, Tamilnadu, INDIA. (Received on: May 5, 2012) ABSTRACT Semiconducting electrically transparent conducting oxide (TCO) thinfilm used for fabricating for various electronic components (say thermister) Temperature Coefficient of Resistance (TCR), low temperature electrical conductivity(σ) and measurement of thin film thickness (d) and its effect on α. Computer Programming language C used for calculating TCR ( α ), σ and d for more number of thin film and nano material samples. Keywords: TCR, Conductivity, Thin film, Thickness.

INTRODUCTION

RESULTS AND DISCUSSION

Temperature Coefficient of Resistance (TCR) α at temperature T is measured by using the formula Maissel et al.

Computer programming used for calculating temperature coefficient of resistance (TCR), low temperature electrical resistance , thin film thickness and its effect on TCR

αT

= ( R1 –R2)/ RT(T1 –T2)

(T = 293 K). We need at least three minimum value for calculating reliable value of TCR. The value of TCR at various position of the given thin films were given in the result and discussion section.

Temperature Coefficient of Resistance (TCR α): #include<srdio.h> #include<conio.h>

Journal of Computer and Mathematical Sciences Vol. 3, Issue 4, 31 August, 2012 Pages (422-497)


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