thyr-mcc95-12io1b

MCC95-12io1B

Thyristor Module

VRRM

= 2x 1200 V

I TAV

=

116 A

VT

=

1.28 V

Phase leg

Part number

MCC95-12io1B

Backside: isolated

3

6

7

1

5

4

2

Features / Advantages:

Applications:

Package: TO-240AA

● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic

● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control

● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling

IXYS reserves the right to change limits, conditions and dimensions.

© 2013 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20130605b

MCC95-12io1B Ratings

Thyristor Conditions

Symbol V RSM/DSM

Definition

max. non-repetitive reverse/forward blocking voltage

TVJ = 25°C

max.

1300

Unit V

V RRM/DRM

max. repetitive reverse/forward blocking voltage

TVJ = 25°C

1200

V

I R/D

reverse current, drain current

VR/D = 1200 V

TVJ = 25°C

200

µA

VR/D = 1200 V

TVJ = 125°C

5

mA

I T = 150 A

TVJ = 25°C

1.29

V

1.50

V

1.28

V

VT

forward voltage drop

min.

typ.

I T = 300 A TVJ = 125 °C

I T = 150 A I T = 300 A I TAV

average forward current

TC = 85°C 180° sine

I T(RMS)

RMS forward current

VT0

threshold voltage

rT

slope resistance

R thJC

thermal resistance junction to case

for power loss calculation only

R thCH

thermal resistance case to heatsink

Ptot

total power dissipation

I TSM

max. forward surge current

I²t

value for fusing

1.70

V

T VJ = 125 °C

116

A

180

A

TVJ = 125 °C

0.85

V

455

W

t = 10 ms; (50 Hz), sine

TVJ = 45°C

2.25

kA

t = 8,3 ms; (60 Hz), sine

VR = 0 V

2.43

kA

t = 10 ms; (50 Hz), sine

TVJ = 125 °C

1.92

kA

t = 8,3 ms; (60 Hz), sine

VR = 0 V

2.07

kA

t = 10 ms; (50 Hz), sine

TVJ = 45°C

25.3 kA²s

t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine

VR = 0 V

24.6 kA²s

TVJ = 125 °C

18.3 kA²s

t = 8,3 ms; (60 Hz), sine

VR = 0 V

VR = 400 V f = 1 MHz

TVJ = 25°C

PGM

max. gate power dissipation

t P = 30 µs

T C = 125 °C

17.7 kA²s 119

t P = 300 µs average gate power dissipation critical rate of rise of current

K/W

0.20

junction capacitance

(di/dt) cr

mΩ K/W

TC = 25°C

CJ

PGAV

2.4 0.22

TVJ = 125°C; f = 50 Hz

repetitive, IT = 250 A

pF 10

W

5

W

0.5

W

150 A/µs

t P = 200 µs; di G /dt = 0.45 A/µs; I G = 0.45 A; VD = ⅔ VDRM

non-repet., IT = 116 A

500 A/µs

(dv/dt) cr

critical rate of rise of voltage

TVJ = 125°C

VGT

gate trigger voltage

VD = 6 V

TVJ = 25 °C TVJ = -40 °C

2.6

V

I GT

gate trigger current

VD = 6 V

TVJ = 25 °C

150

mA

TVJ = -40 °C

200

mA

TVJ = 125 °C

0.2

V

10

mA

TVJ = 25 °C

450

mA

VD = ⅔ VDRM

1000 V/µs

R GK = ∞; method 1 (linear voltage rise)

VGD

gate non-trigger voltage

I GD

gate non-trigger current

IL

latching current

VD = ⅔ VDRM t p = 10 µs

2.5

V

IG = 0.45 A; di G /dt = 0.45 A/µs IH

holding current

VD = 6 V R GK = ∞

TVJ = 25 °C

200

mA

t gd

gate controlled delay time

VD = ½ VDRM

TVJ = 25 °C

2

µs

tq

turn-off time

IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 150 A; VD = ⅔ VDRM TVJ = 125 °C di/dt = 10 A/µs; dv/dt =

IXYS reserves the right to change limits, conditions and dimensions.

© 2013 IXYS all rights reserved

185

µs

20 V/µs; t p = 200 µs

Data according to IEC 60747and per semiconductor unless otherwise specified

20130605b

MCC95-12io1B Package

Ratings

TO-240AA

Symbol I RMS

Definition

Conditions

RMS current

per terminal

min.

TVJ

virtual junction temperature

T op

operation temperature

Tstg

storage temperature

-40

typ.

max.

200

Unit A

-40

125

°C

-40

100

°C

125

°C

Weight

90

g

MD

mounting torque

2.5

4

Nm

MT

terminal torque

2.5

4

Nm

d Spp/App d Spb/Apb VISOL

creepage distance on surface | striking distance through air

t = 1 minute

Part Number MCC95-12io1B

Similar Part MCMA110P1200TA MCMA140P1200TA

Equivalent Circuits for Simulation I

V0

R0

13.0 16.0

t = 1 second

isolation voltage

Ordering Standard

terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA

Marking on Product MCC95-12io1B

Package TO-240AA-1B TO-240AA-1B

* on die level

Delivery Mode Box

mm

16.0

mm

3600

V

3000

V

Quantity 6

Code No. 458163

Voltage class 1200 1200

T VJ = 125 °C

Thyristor

V 0 max

threshold voltage

0.85

V

R 0 max

slope resistance *

1.2

mΩ

IXYS reserves the right to change limits, conditions and dimensions.

© 2013 IXYS all rights reserved

9.7

Data according to IEC 60747and per semiconductor unless otherwise specified

20130605b

MCC95-12io1B Outlines TO-240AA

3

IXYS reserves the right to change limits, conditions and dimensions.

Š 2013 IXYS all rights reserved

6

7

1

5

4

2

Data according to IEC 60747and per semiconductor unless otherwise specified

20130605b

MCC95-12io1B Thyristor 105

2500

ITSM

DC 180° sin 120° 60° 30°

200

50 Hz 80% VRRM TVJ = 45°C TVJ = 125°C

2000

250

VR = 0 V

150

I2t

1500

I TAVM

[A2s]

[A]

100

TVJ = 45°C

[A]

1000 50 TVJ = 125°C

500 0.001

104 0.01

0.1

1

0 1

t [s] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration

2

3

4 5 6 7 8 910

0

25

50

Fig. 2 I2t versus time (1-10 ms)

Fig. 3 Max. forward current at case temperature

250

100 tp = 30 µs tp = 500 µs

RthKA K/W 0.4 0.6 0.8 1 1.2 1.5 2 3

200

150 DC 180° sin 120° 60° 30°

VG [V] 1

50

125°C

[W] 100

PGM = 120 W 60 W 8W

10 P = GAV

0

0.1 0.01

0

50

100

150

0

50

ITAVM, IFAVM [A]

100

IGD

0.1

Ta [°C]

1

10

IG [A] Fig. 5 Gate trigger characteristics

Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode)

1000

100

TVJ = 25°C

RthKA K/W

800

Ptot

IGT (TVJ = -40°C) IGT (TVJ = 0°C) IGT (TVJ = 25°C)

25°C

Ptot

75 100 125 150

TC [°C]

t [ms]

0.03 0.06 0.08 0.12 0.15 0.3 0.5

600

[W] 400

10

tgd [μs]

Circuit B6 3x MCC95 or

200

limit

1

typ.

3x MCD95

0 0

100

200

300

0

IdAVM [A]

50

100

Ta [°C]

Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions.

© 2013 IXYS all rights reserved

150

0.1 0.01

0.1

1

10

IG [A] Fig. 7 Gate trigger delay time

Data according to IEC 60747and per semiconductor unless otherwise specified

20130605b

MCC95-12io1B Thyristor 1200

Circuit W3 3x MCC95 or 3x MCD95

1000

RthKA K/W 0.03 0.06 0.08 0.12 0.15 0.3 0.5

800

Ptot 600

[W] 400 200 0 0

50

100

150

200

250

0

50

IRMS [A]

100

150

Ta [°C]

Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature

0.30 RthJC for various conduction angles d:

d RthJC [K/W] DC 0.22 180° 0.23 120° 0.25 60° 0.27 30° 0.28

0.25 0.20

ZthJC

30° 60° 120° 180° DC

0.15

[K/W]

Constants for ZthJC calculation:

0.10

i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456

0.05 0.00 10 -3

10 -2

10 -1

10 0

10 1

ti [s] 0.0019 0.0477 0.3440

10 2

t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)

0.5

RthJK for various conduction angles d:

d RthJK [K/W] DC 0.42 180° 0.43 120° 0.45 60° 0.47 30° 0.48

0.4

ZthJK

0.3

[K/W]

0.2

30° 60° 120° 180° DC

Constants for ZthJK calculation: i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456 4 0.2000

0.1

0.0 10 -3

10 -2

10 -1

10 0

10 1

10 2

ti [s] 0.0019 0.0477 0.3440 1.3200

10 3

t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions.

© 2013 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20130605b