MCC95-12io1B
Thyristor Module
VRRM
= 2x 1200 V
I TAV
=
116 A
VT
=
1.28 V
Phase leg
Part number
MCC95-12io1B
Backside: isolated
3
6
7
1
5
4
2
Features / Advantages:
Applications:
Package: TO-240AA
● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic
● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605b
MCC95-12io1B Ratings
Thyristor Conditions
Symbol V RSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
max. 1300
Unit V
V RRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
1200
V
I R/D
reverse current, drain current
VR/D = 1200 V
TVJ = 25°C
200
µA
VR/D = 1200 V
TVJ = 125°C
5
mA
I T = 150 A
TVJ = 25°C
1.29
V
1.50
V
1.28
V
VT
forward voltage drop
min.
typ.
I T = 300 A TVJ = 125 °C
I T = 150 A I T = 300 A I TAV
average forward current
TC = 85°C 180° sine
I T(RMS)
RMS forward current
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
for power loss calculation only
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I TSM
max. forward surge current
I²t
value for fusing
1.70
V
T VJ = 125 °C
116
A
180
A
TVJ = 125 °C
0.85
V
455
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
2.25
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
2.43
kA
t = 10 ms; (50 Hz), sine
TVJ = 125 °C
1.92
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
2.07
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
25.3 kA²s
t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine
VR = 0 V
24.6 kA²s
TVJ = 125 °C
18.3 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 125 °C
17.7 kA²s 119
t P = 300 µs average gate power dissipation critical rate of rise of current
K/W
0.20
junction capacitance
(di/dt) cr
mΩ K/W
TC = 25°C
CJ
PGAV
2.4 0.22
TVJ = 125°C; f = 50 Hz
repetitive, IT = 250 A
pF 10
W
5
W
0.5
W
150 A/µs
t P = 200 µs; di G /dt = 0.45 A/µs; I G = 0.45 A; VD = ⅔ VDRM
non-repet., IT = 116 A
500 A/µs
(dv/dt) cr
critical rate of rise of voltage
TVJ = 125°C
VGT
gate trigger voltage
VD = 6 V
TVJ = 25 °C TVJ = -40 °C
2.6
V
I GT
gate trigger current
VD = 6 V
TVJ = 25 °C
150
mA
TVJ = -40 °C
200
mA
TVJ = 125 °C
0.2
V
10
mA
TVJ = 25 °C
450
mA
VD = ⅔ VDRM
1000 V/µs
R GK = ∞; method 1 (linear voltage rise)
VGD
gate non-trigger voltage
I GD
gate non-trigger current
IL
latching current
VD = ⅔ VDRM t p = 10 µs
2.5
V
IG = 0.45 A; di G /dt = 0.45 A/µs IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
200
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 150 A; VD = ⅔ VDRM TVJ = 125 °C di/dt = 10 A/µs; dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
185
µs
20 V/µs; t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605b
MCC95-12io1B Package
Ratings
TO-240AA
Symbol I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max. 200
Unit A
-40
125
°C
-40
100
°C
125
°C
Weight
90
g
MD
mounting torque
2.5
4
Nm
MT
terminal torque
2.5
4
Nm
d Spp/App d Spb/Apb VISOL
creepage distance on surface | striking distance through air
t = 1 minute
Part Number MCC95-12io1B
Similar Part MCMA110P1200TA MCMA140P1200TA
Equivalent Circuits for Simulation I
V0
R0
13.0 16.0
t = 1 second
isolation voltage
Ordering Standard
terminal to terminal terminal to backside 50/60 Hz, RMS; IISOL ≤ 1 mA
Marking on Product MCC95-12io1B
Package TO-240AA-1B TO-240AA-1B
* on die level
Delivery Mode Box
mm
16.0
mm
3600
V
3000
V
Quantity 6
Code No. 458163
Voltage class 1200 1200
T VJ = 125 °C
Thyristor
V 0 max
threshold voltage
0.85
V
R 0 max
slope resistance *
1.2
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
9.7
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605b
MCC95-12io1B Outlines TO-240AA
3
IXYS reserves the right to change limits, conditions and dimensions.
Š 2013 IXYS all rights reserved
6
7
1
5
4
2
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605b
MCC95-12io1B Thyristor 105
2500
ITSM
DC 180° sin 120° 60° 30°
200
50 Hz 80% VRRM TVJ = 45°C TVJ = 125°C
2000
250
VR = 0 V
150
I2t
1500
I TAVM
[A2s]
[A]
100
TVJ = 45°C
[A]
1000 50 TVJ = 125°C
500 0.001
104 0.01
0.1
1
0 1
t [s] Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
2
3
4 5 6 7 8 910
0
25
50
Fig. 2 I2t versus time (1-10 ms)
Fig. 3 Max. forward current at case temperature
250
100 tp = 30 µs tp = 500 µs
RthKA K/W 0.4 0.6 0.8 1 1.2 1.5 2 3
200
150 DC 180° sin 120° 60° 30°
VG [V] 1
50
125°C
[W] 100
PGM = 120 W 60 W 8W
10 P = GAV
0
0.1 0.01
0
50
100
150
0
50
ITAVM, IFAVM [A]
100
IGD
0.1
Ta [°C]
1
10
IG [A] Fig. 5 Gate trigger characteristics
Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode)
1000
100
TVJ = 25°C
RthKA K/W
800
Ptot
IGT (TVJ = -40°C) IGT (TVJ = 0°C) IGT (TVJ = 25°C)
25°C
Ptot
75 100 125 150
TC [°C]
t [ms]
0.03 0.06 0.08 0.12 0.15 0.3 0.5
600
[W] 400
10
tgd [μs]
Circuit B6 3x MCC95 or
200
limit
1
typ.
3x MCD95
0 0
100
200
300
0
IdAVM [A]
50
100
Ta [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
150
0.1 0.01
0.1
1
10
IG [A] Fig. 7 Gate trigger delay time
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605b
MCC95-12io1B Thyristor 1200
Circuit W3 3x MCC95 or 3x MCD95
1000
RthKA K/W 0.03 0.06 0.08 0.12 0.15 0.3 0.5
800
Ptot 600
[W] 400 200 0 0
50
100
150
200
250
0
50
IRMS [A]
100
150
Ta [°C]
Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
0.30 RthJC for various conduction angles d:
d RthJC [K/W] DC 0.22 180° 0.23 120° 0.25 60° 0.27 30° 0.28
0.25 0.20
ZthJC
30° 60° 120° 180° DC
0.15
[K/W]
Constants for ZthJC calculation:
0.10
i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456
0.05 0.00 10 -3
10 -2
10 -1
10 0
10 1
ti [s] 0.0019 0.0477 0.3440
10 2
t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
0.5
RthJK for various conduction angles d:
d RthJK [K/W] DC 0.42 180° 0.43 120° 0.45 60° 0.47 30° 0.48
0.4
ZthJK
0.3
[K/W]
0.2
30° 60° 120° 180° DC
Constants for ZthJK calculation: i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456 4 0.2000
0.1
0.0 10 -3
10 -2
10 -1
10 0
10 1
10 2
ti [s] 0.0019 0.0477 0.3440 1.3200
10 3
t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605b