Optimization of the Microwave Properties of the Kinetic Kinetic-Inductance Inductance Bolometer (KIBO)
Abstract: Silicon nitride membrane based cryogenic bolometers exhibit high sensitivity and enable ultra-sensitive sensitive detector applications. Multi Multi-pixel pixel instruments were already introduced as devices for submillimeter submillimeter-wave wave imaging. Nevertheless, the numbers of pixels are limited by the readout process which is typically a time-division time multiplexing or code-division division multiplexing technique. To overcome this challenge, a replacement of the transition transition-edge edge sensor as thermometer by a lumpedlumped element resonance circuit seems to be a promising solution. Therefore, one can benefit from the intrinsic capability of frequency frequency-division division multiplexing that allows the readout of large detector arrays simultaneously and in real real-time. time. The number of pixels is then limited by the available readout bandwidth and the quality factors of each individual vidual resonance circuit. We successfully demonstrated, based on our feasibility study, the principal operation of such a device, what we call kinetic-inductance inductance bolometer (KIBO). But the overall performance of the achievable noise-equivalent equivalent power (NEP) w was as limited by implementation and operation temperature of KIBO. Therefore, improved KIBO designs were developed and fabricated with niobium thin thin-film film technology. In this paper, we describe the improvement procedure and estimate the expected NEP value.