IJSRD - International Journal for Scientific Research & Development| Vol. 3, Issue 11, 2016 | ISSN (online): 2321-0613
Four Switch Three-Level Soft Switched Converter Vijay Dubey1 C. S. Sharma2 M.E (EMD) 2Associate Professor 1,2 Department of Electrical Engineering 1,2 SATI Vidisha (M.P) 1
Abstract— A Three-level, constant-frequency, isolated converter which employs a coupled in conductor to achieve zero-voltage switching. Three level DC converter has been introduced hare. This converter consists of four switches, which give the two levels of the DC output i.e. 200V each. It will also give another level of DC output at inductor side which is 45V DC. We take the input 750V and it split three different levels of DC output. The entire model simulated using power system block set in MATLAB 2013. Key words: power factor correction, boost rectifier, ZVS,ZCS Abbreviations: Cc-Coupling capacitor, Ia, Ib and Ic are inductor currents,I1, I2 and I3 are input currents I. INTRODUCTION In this paper introduce SIMULINK model design, different elements specification like capacitors, inductors, transformer, and diode specifications switches etc. In this paper, a new three-level ZVS converter is introduced. Proposed 3-level ZVS converter apply a coupled inductor on primary side to achieve ZVS in entire line and load range. Since this coupled inductor does not appear as a series inductance in load current path, it does not cause a loss of duty cycle or severe voltage ringing across output diode. As a result, proposed circuit exhibits an increased conversion efficiency. Performance of proposed three-level converter circuit was experimentally verified on a 1-kW prototype circuit that was designed to operate from a 750V input and deliver 48V output voltage. II. PROPOSED CIRCUIT Fig. 1 shows a circuit diagram of proposed three-level softswitched dc-dc converter that employs a coupled inductor on primary side to extend ZVS range of primary switches with a minimum circulation energy and conduction loss. to center-tapped secondary of transformer. Three-level converter in Fig (1) consists of a series connection of four primary switches through, rail-splitting capacitors and, “flying capacitors” and isolation transformer TR, and coupled inductor. In this circuit, load is coupled to converter through a full-wave rectifier connected In addition, clamping diodes and are used to clamp voltage of outer switches and, respectively, to after switches are turned off.
Fig. 1: Three Switch Boost Power Converter The clamping diodes are different from rectifier diode. Now very high snubber resistance is use in these diodes. Diode DC1 and DC2 are use as clamping diode in this circuit. It can be seen that diodes DC1, DC2 should have a voltage blocking capability of 750V, and should be able to conduct a peak current of 250V. Similarly mosfets should be able conduct a peak current of with voltage blocking capability of 75V. The metal-oxide semiconductor field-effect transistor (MOSFET) is a semiconductor device controllable by gate signal (g > 0). The MOSFET device is connected in parallel with an internal diode that turns on when MOSFET device is reverse biased (Vds < 0) and no gate signal is applied (g=0). The model is simulated by an ideal switch controlled by a logical signal (g greater then 0 or g = 0), with a diode connected in parallel. The MOSFET device turn on when a positive signal is applied at gate input (g > 0) whether drainsource voltage is positive or negative. If no signal is applied at gate input (g=0), only internal diode conduct when voltage exceeds its forward voltage Vf with a positive or negative current flowing through device, MOSFET turn off when gate input becomes 0. If current I is negative and flowing in internal diode (no gate signal or g = 0), switch turns off when current I becomes 0. The on state voltage Vds varies 1) Vds = Ron*I when a positive signal is applied at gate input. 2) Vds = Rd*I-Vf +Lon*dI/dt when anti parallel diode is conducting (no gate signal).
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