IRF250 Series
SEMICONDUCTOR
RoHS RoHS
Nell High Power Products
N-Channel Power MOSFET 30A, 200Volts DESCRIPTION D The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications.
G
G D S
D
S
TO-3PB (IRF250B)
TO-247AB (IRF250C) D (Drain)
FEATURES RDS(ON) = 0.085Ω @ VGS = 10V G (Gate)
Ultra low gate charge(140nC Max.) Low reverse transfer capacitance (C RSS = 250pF typical)
S (Source)
Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature
PRODUCT SUMMARY ID (A)
30
VDSS (V)
200
RDS(ON) (Ω)
0.085 @ V GS = 10V
QG(nC) max.
140
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltage
T J =25°C to 150°C
200
V DGR
Drain to Gate voltage
R GS =20KΩ
200
V GS ID
Gate to Source voltage
UNIT
V
±20
Continuous Drain Current (V GS =10V)
T C =25°C
30
T C =100°C
21 A
I DM
Pulsed Drain current(Note 1)
I AR
Avalanche current(Note 1)
E AR
Repetitive avalanche energy(Note 1)
l AR =30A, R GS =50Ω, V GS =10V
E AS
Single pulse avalanche energy(Note 2)
l AS =30A, L =0.7mH
120 30 19 mJ
dv/dt
Peak diode recovery dv/dt(Note 3) Total power dissipation
PD TJ T STG TL
T C =25°C
Derate above 25 ° C
5.0
V /ns
190
W
1.5
W /°C
Operation junction temperature
-55 to 150
Storage temperature
-55 to 150
Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw
1.6mm from case
Page 1 of 7
ºC
300 10 (1.1)
Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . l AS =30 A, L =0.7 mH , V DD =50 V , R G =25 Ω , starting T J =25 °C. 3 . I SD ≤ 30 A, di/dt ≤ 190 A/µs, V DD ≤ V (BR)DSS , starting T J < 150 °C.
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410
lbf . in (N . m)
IRF250 Series
SEMICONDUCTOR
RoHS RoHS
Nell High Power Products THERMAL RESISTANCE SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heat sink
Rth(j-a)
Thermal resistance, junction to ambient
MIN.
TYP.
MAX. UNIT 0.65 ºC/W
0.24 40
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL
TEST CONDITIONS
PARAMETER
MIN.
TYP.
MAX.
UNIT
STATIC V(BR)DSS
▲V (BR)DSS/▲T J I DSS
Drain to source breakdown voltage
I D = 250μA, V GS = 0V
Breakdown voltage temperature coefficient
I D = 1mA, V DS =V GS
Drain to source leakage current
200
V V/ºC
0.27
V DS =200V, V GS =0V
T C = 25°C
25.0
V DS =160V, V GS =0V
T C =125°C
250
μA
Gate to source forward leakage current
V GS = 20V, V DS = 0V
100
Gate to source reverse leakage current
V GS = -20V, V DS = 0V
-100
R DS(ON)
Static drain to source on-state resistance
I D = 18A, V GS = 10V
0.085
Ω
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =250μA
2.0
4.0
V
Forward transconductance
V DS = 50V, l D = 18A
12
I GSS
g fs
nA
S
DYNAMIC C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
t d(ON)
Turn-on delay time
tr t d(OFF) tf QG
Rise time Turn-off delay time
2800 V DS = 25V, V GS = 0V, f =1MHz
pF
780 250 16
V DD = 100V, V GS = 10V I D = 30A, R G = 6.2Ω, R D = 3.2Ω (Note1,2)
86
ns
70
Fall time
62
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
LD
Internal drain inductance
LS
Internal source inductance
140 V DD = 160V, V GS = 10V I D = 30A, (Note1,2)
28
nC
74 5
Between lead, 6mm(0.25”) form package and center of die contact
nH 13
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D )
TEST CONDITIONS
PARAMETER
MIN.
TYP.
MAX.
UNIT V
Diode forward voltage
I SD = 30A, V GS = 0V
2.0
Continuous source to drain current
Integral reverse P-N junction diode in the MOSFET
30
D (Drain)
A I SM
Pulsed source current
120
G (Gate)
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 30A, V GS = 0V, dI F /dt = 100A/µs
Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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Page 2 of 7
360
540
ns
4.6
6.9
μC
IRF250 Series
SEMICONDUCTOR
RoHS RoHS
Nell High Power Products ORDERING INFORMATION SCHEME
IRF
B
250
MOSFET series N-Channel,IRF series
Current and Voltage rating, ID & VDS 30A / 200V
Package type B = TO-3PB C = TO-247AB
■ TYPICAL CHARACTERISTICS Fig.2 Typical output characteristics, T C =150°C
Fig.1 Typical output characteristics, T C =25°C
Drain Current, I D (A)
Drain Current, l D (A)
10 2
V GS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V
10 2
10 1
4.5V
10 0
Note: 1. 20µs Pulse Test 2. T C = 25°C
10 1 4.5V
Note: 1. 20µs Pulse Test 2. T C = 50°C
10 0
10 1
10 0
10 -1
V GS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V
10 0
10 -1
10 1
Drain-Source voltage, V DS (V)
Drain-Source voltage, V DS (V)
Fig.4 Normalized On-Resistance vs. Temperature Fig.3 Typical transfer characteristics 3.0
Drain-Source On-Resistance, R Ds(ON) (Normalized)
Drain current, l D (A)
10 2
150ºC
10 1 25ºC
10 0
Note: 1. V DS = 50V 2. 20µs Pulse Test
4
5
6
7
8
9
2.0
1.5 1.0 0.5
I D = 30A V GS = 10V
0.0 -60 -40 -20
10
0
20 40
60 80 100 120 140 160
Junction temperature, T j (°C)
Gate-Source voltage, V GS (V)
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2.5
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IRF250 Series
SEMICONDUCTOR
RoHS RoHS
Nell High Power Products
Fig.5 Typical capacitance vs. Drain-to-Source voltage
Fig.6 Typical source-drain diode forward voltage
5000
Capacitance (pF)
4800
Reverse drain current,I SD (A)
V GS = 0V, f = 1MHz C iss = C gs +C gd ( C ds shorted ) C oss = C ds +C gd C rss = C gd
3600 C iss
2400
C oss
1200
C rss
25ºC
V GS = 0V 0.5
10 1
10 0
1.0
1.5
2.5
2.0
Drain- Source voltage, V SD (V)
Source- Drain voltage, V SD (V)
Fig.7 Typical gate charge vs. gate-to-source voltage
Fig.8 Maximum safe operating area
20
10 3 Operation in This Area is Limited by R DS(ON) V DS = 160V
16
V DS = 100V
Drain current, l D (A)
Gate-Source voltage, V GS (V)
150ºC
10
0
V DS = 40V
12
8
10µs
10 2
100µs
10 1ms
Note: 1. T C = 25°C 2. T J = 150°C 3. Single Pulse
4 I D = 30 A
1
0 30
0
60
90
120
150
Fig.9 Maximum drain current vs. Case temperature 30 25 20 15 10 5 0 25
50
75
100
125
150
Case temperature, T C (°C)
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1
10
10ms
10 2
Drain-source voltage, V DS (V)
Total gate charge, Q G (nC)
Drain current, l D (A)
100
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10 3
IRF250 Series
SEMICONDUCTOR
RoHS RoHS
Nell High Power Products
Fig.10 Maximum effective transient thermal impedance, Junction-to-Case Thermal response R th(J-C) (t)
1 D ~ 0.5 0.2
0.1
PDM
0.1 0.05 0.02 0.01
10 -2
t1
Single pulse (Thermal response)
t2
Notes: 1. Duty factor, D = t1/ t2 2. Peak TJ = PDM * Rth(j-c) +TC
10 -3 10 -5
10 -4
10 -3
10 2
0.1
10
1
Rectangular pulse duration, t 1 (S)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
RD
V DS
V DS 90%
V GS RG
D.U.T.
+
- V DD
10V V GS
Pulse width ≤ 1µs Duty Factor ≤ 0.1%
10% t d(ON)
t d(OFF) tR
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
L
V DS
tF
BV DSS l AS
RG
D.U.T. l AS
+ V - DD
l D(t)
A
10V
V DS(t) V DD
tP
0.01Ω
Time
Vary t p to obtain required I AS
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tp
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IRF250 Series
SEMICONDUCTOR
RoHS RoHS
Nell High Power Products Fig.12c. Maximum avalanche energy vs. Drain current
Single pulse energy, E AS (mJ)
1000 lD 13A 19A BOTTOM 30A TOP 800
600
400
200 V DD = 50 V 0 50
25
75
100
150
125
Starting Junction temperature, T J (°C)
Fig.13a. Basic gate charge waveform
Fig.13b. Gate charge test circuit
Current Regulator Same Type as D.U.T.
V GS 50KΩ
QG 0.2µF
12V
10V
0.3µF
+
Q GD
Q GS
D.U.T. V GS 3mA
RG
Charge
RD
Current Sampling Resistors
Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET
D.U.T.
Driver Gate Drive
+
Circuit Layout Considerations • Low Stray lnductance • Ground Plane • Low Leakage lnductance Current Transformer
P.W.
D=
Period
P.W. Period VGS=10V
-
*
D.U.T. I SD Waveform
+ -
-
RG
Reverse Recovery Current
+
Body Diode Forward Current di/dt D.U.T. VDS Waveform
• • • •
dv/dt controlled by R G Driver same type as D.U.T. l SD controlled by Duty Factor " D " D.U.T. -Device Under Test
Re-Applied Voltage
+ -
V DD
Diode Recovery dv/dt
Body Diode
VDD
Forward Drop
Inductor Curent Ripple ≤ 5%
ISD
*V GS = 5V for Logic Level Devices and 3V for drive devices
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Page 6 of 7
-
V DS
IRF250 Series
SEMICONDUCTOR
RoHS RoHS
Nell High Power Products
1.8
4.8±0.2 2.0±0.1
4.0
19.9±0.3
2.0
15.6±0.4 9.6
5.0 ±0 . 2
TO-3PB
2
4.0 max
20.0 min
Φ3.2 ± 0,1
3
5.45±0.1 G
D
S
1
2
3
+0.2 1.05 -0.1
+0.2 0.65 -0.1
5.45±0.1
1.4
D (Drain)
G (Gate)
All dimensions in millimeters(inches)
S (Source)
TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098)
15.49 (0.610) 16.26 (0.640)
20.80 (0.819) 21.46 (0.845)
Drain
5.38 (0.212) 6.20 (0.244)
16.15 (0.242)
3.55 (0.138) 3.81 (0.150) G
4.50 (0.177)Max
D
S 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) (TYP.) 2.13 (0.084)
19.81 (0.780) 20.32 (0.800)
0.40 (0.016) 0.79 (0.031)
1.01 (0.040) 1.40 (0.055) (TYP.)
5.45 (0.215)
5.45 (0.215)
2.21 (0.087) 2.59 (0.102) D (Drain)
All dimensions in millimeters(inches)
G (Gate)
S (Source)
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