FB T0-3

IRF250 Series

SEMICONDUCTOR

RoHS RoHS

Nell High Power Products

N-Channel Power MOSFET 30A, 200Volts DESCRIPTION D The Nell IRF250 is a three-terminal silicon device with current conduction capability of 30A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts.

They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications.

G

G D S

D

S

TO-3PB (IRF250B)

TO-247AB (IRF250C) D (Drain)

FEATURES RDS(ON) = 0.085Ω @ VGS = 10V G (Gate)

Ultra low gate charge(140nC Max.) Low reverse transfer capacitance (C RSS = 250pF typical)

S (Source)

Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature

PRODUCT SUMMARY ID (A)

30

VDSS (V)

200

RDS(ON) (Ω)

0.085 @ V GS = 10V

QG(nC) max.

140

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL

TEST CONDITIONS

PARAMETER

VALUE

VDSS

Drain to Source voltage

T J =25°C to 150°C

200

V DGR

Drain to Gate voltage

R GS =20KΩ

200

V GS ID

Gate to Source voltage

UNIT

V

±20

Continuous Drain Current (V GS =10V)

T C =25°C

30

T C =100°C

21 A

I DM

Pulsed Drain current(Note 1)

I AR

Avalanche current(Note 1)

E AR

Repetitive avalanche energy(Note 1)

l AR =30A, R GS =50Ω, V GS =10V

E AS

Single pulse avalanche energy(Note 2)

l AS =30A, L =0.7mH

120 30 19 mJ

dv/dt

Peak diode recovery dv/dt(Note 3) Total power dissipation

PD TJ T STG TL

T C =25°C

Derate above 25 ° C

5.0

V /ns

190

W

1.5

W /°C

Operation junction temperature

-55 to 150

Storage temperature

-55 to 150

Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw

1.6mm from case

Page 1 of 7

ºC

300 10 (1.1)

Note: 1. Repetitive rating: pulse width limited by junction temperature.

2 . l AS =30 A, L =0.7 mH , V DD =50 V , R G =25 Ω , starting T J =25 °C. 3 . I SD ≤ 30 A, di/dt ≤ 190 A/µs, V DD ≤ V (BR)DSS , starting T J < 150 °C.

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410

lbf . in (N . m)

IRF250 Series

SEMICONDUCTOR

RoHS RoHS

Nell High Power Products THERMAL RESISTANCE SYMBOL

PARAMETER

Rth(j-c)

Thermal resistance, junction to case

Rth(c-s)

Thermal resistance, case to heat sink

Rth(j-a)

Thermal resistance, junction to ambient

MIN.

TYP.

MAX. UNIT 0.65 ºC/W

0.24 40

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL

TEST CONDITIONS

PARAMETER

MIN.

TYP.

MAX.

UNIT

STATIC V(BR)DSS

▲V (BR)DSS/▲T J I DSS

Drain to source breakdown voltage

I D = 250μA, V GS = 0V

Breakdown voltage temperature coefficient

I D = 1mA, V DS =V GS

Drain to source leakage current

200

V V/ºC

0.27

V DS =200V, V GS =0V

T C = 25°C

25.0

V DS =160V, V GS =0V

T C =125°C

250

μA

Gate to source forward leakage current

V GS = 20V, V DS = 0V

100

Gate to source reverse leakage current

V GS = -20V, V DS = 0V

-100

R DS(ON)

Static drain to source on-state resistance

I D = 18A, V GS = 10V

0.085

Ω

V GS(TH)

Gate threshold voltage

V GS =V DS , I D =250μA

2.0

4.0

V

Forward transconductance

V DS = 50V, l D = 18A

12

I GSS

g fs

nA

S

DYNAMIC C ISS

Input capacitance

C OSS

Output capacitance

C RSS

Reverse transfer capacitance

t d(ON)

Turn-on delay time

tr t d(OFF) tf QG

Rise time Turn-off delay time

2800 V DS = 25V, V GS = 0V, f =1MHz

pF

780 250 16

V DD = 100V, V GS = 10V I D = 30A, R G = 6.2Ω, R D = 3.2Ω (Note1,2)

86

ns

70

Fall time

62

Total gate charge

Q GS

Gate to source charge

Q GD

Gate to drain charge (Miller charge)

LD

Internal drain inductance

LS

Internal source inductance

140 V DD = 160V, V GS = 10V I D = 30A, (Note1,2)

28

nC

74 5

Between lead, 6mm(0.25”) form package and center of die contact

nH 13

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D )

TEST CONDITIONS

PARAMETER

MIN.

TYP.

MAX.

UNIT V

Diode forward voltage

I SD = 30A, V GS = 0V

2.0

Continuous source to drain current

Integral reverse P-N junction diode in the MOSFET

30

D (Drain)

A I SM

Pulsed source current

120

G (Gate)

S (Source)

t rr

Reverse recovery time

Q rr

Reverse recovery charge

I SD = 30A, V GS = 0V, dI F /dt = 100A/µs

Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

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Page 2 of 7

360

540

ns

4.6

6.9

μC

IRF250 Series

SEMICONDUCTOR

RoHS RoHS

Nell High Power Products ORDERING INFORMATION SCHEME

IRF

B

250

MOSFET series N-Channel,IRF series

Current and Voltage rating, ID & VDS 30A / 200V

Package type B = TO-3PB C = TO-247AB

■ TYPICAL CHARACTERISTICS Fig.2 Typical output characteristics, T C =150°C

Fig.1 Typical output characteristics, T C =25°C

Drain Current, I D (A)

Drain Current, l D (A)

10 2

V GS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V

10 2

10 1

4.5V

10 0

Note: 1. 20µs Pulse Test 2. T C = 25°C

10 1 4.5V

Note: 1. 20µs Pulse Test 2. T C = 50°C

10 0

10 1

10 0

10 -1

V GS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V

10 0

10 -1

10 1

Drain-Source voltage, V DS (V)

Drain-Source voltage, V DS (V)

Fig.4 Normalized On-Resistance vs. Temperature Fig.3 Typical transfer characteristics 3.0

Drain-Source On-Resistance, R Ds(ON) (Normalized)

Drain current, l D (A)

10 2

150ºC

10 1 25ºC

10 0

Note: 1. V DS = 50V 2. 20µs Pulse Test

4

5

6

7

8

9

2.0

1.5 1.0 0.5

I D = 30A V GS = 10V

0.0 -60 -40 -20

10

0

20 40

60 80 100 120 140 160

Junction temperature, T j (°C)

Gate-Source voltage, V GS (V)

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2.5

Page 3 of 7

IRF250 Series

SEMICONDUCTOR

RoHS RoHS

Nell High Power Products

Fig.5 Typical capacitance vs. Drain-to-Source voltage

Fig.6 Typical source-drain diode forward voltage

5000

Capacitance (pF)

4800

Reverse drain current,I SD (A)

V GS = 0V, f = 1MHz C iss = C gs +C gd ( C ds shorted ) C oss = C ds +C gd C rss = C gd

3600 C iss

2400

C oss

1200

C rss

25ºC

V GS = 0V 0.5

10 1

10 0

1.0

1.5

2.5

2.0

Drain- Source voltage, V SD (V)

Source- Drain voltage, V SD (V)

Fig.7 Typical gate charge vs. gate-to-source voltage

Fig.8 Maximum safe operating area

20

10 3 Operation in This Area is Limited by R DS(ON) V DS = 160V

16

V DS = 100V

Drain current, l D (A)

Gate-Source voltage, V GS (V)

150ºC

10

0

V DS = 40V

12

8

10µs

10 2

100µs

10 1ms

Note: 1. T C = 25°C 2. T J = 150°C 3. Single Pulse

4 I D = 30 A

1

0 30

0

60

90

120

150

Fig.9 Maximum drain current vs.

Case temperature 30 25 20 15 10 5 0 25

50

75

100

125

150

Case temperature, T C (°C)

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1

10

10ms

10 2

Drain-source voltage, V DS (V)

Total gate charge, Q G (nC)

Drain current, l D (A)

100

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10 3

IRF250 Series

SEMICONDUCTOR

RoHS RoHS

Nell High Power Products

Fig.10 Maximum effective transient thermal impedance, Junction-to-Case Thermal response R th(J-C) (t)

1 D ~ 0.5 0.2

0.1

PDM

0.1 0.05 0.02 0.01

10 -2

t1

Single pulse (Thermal response)

t2

Notes: 1. Duty factor, D = t1/ t2 2. Peak TJ = PDM * Rth(j-c) +TC

10 -3 10 -5

10 -4

10 -3

10 2

0.1

10

1

Rectangular pulse duration, t 1 (S)

Fig.11a. Switching time test circuit

Fig.11b. Switching time waveforms

RD

V DS

V DS 90%

V GS RG

D.U.T.

+

- V DD

10V V GS

Pulse width ≤ 1µs Duty Factor ≤ 0.1%

10% t d(ON)

t d(OFF) tR

Fig.12a. Unclamped lnductive test circuit

Fig.12b. Unclamped lnductive waveforms

L

V DS

tF

BV DSS l AS

RG

D.U.T. l AS

+ V - DD

l D(t)

A

10V

V DS(t) V DD

tP

0.01Ω

Time

Vary t p to obtain required I AS

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tp

Page 5 of 7

IRF250 Series

SEMICONDUCTOR

RoHS RoHS

Nell High Power Products Fig.12c. Maximum avalanche energy vs.

Drain current

Single pulse energy, E AS (mJ)

1000 lD 13A 19A BOTTOM 30A TOP 800

600

400

200 V DD = 50 V 0 50

25

75

100

150

125

Starting Junction temperature, T J (°C)

Fig.13a. Basic gate charge waveform

Fig.13b. Gate charge test circuit

Current Regulator Same Type as D.U.T.

V GS 50KΩ

QG 0.2µF

12V

10V

0.3µF

+

Q GD

Q GS

D.U.T. V GS 3mA

RG

Charge

RD

Current Sampling Resistors

Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET

D.U.T.

Driver Gate Drive

+

Circuit Layout Considerations • Low Stray lnductance • Ground Plane • Low Leakage lnductance Current Transformer

P.W.

D=

Period

P.W. Period VGS=10V

-

*

D.U.T. I SD Waveform

+ -

-

RG

Reverse Recovery Current

+

Body Diode Forward Current di/dt D.U.T. VDS Waveform

• • • •

dv/dt controlled by R G Driver same type as D.U.T. l SD controlled by Duty Factor " D " D.U.T. -Device Under Test

Re-Applied Voltage

+ -

V DD

Diode Recovery dv/dt

Body Diode

VDD

Forward Drop

Inductor Curent Ripple ≤ 5%

ISD

*V GS = 5V for Logic Level Devices and 3V for drive devices

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Page 6 of 7

-

V DS

IRF250 Series

SEMICONDUCTOR

RoHS RoHS

Nell High Power Products

1.8

4.8±0.2 2.0±0.1

4.0

19.9±0.3

2.0

15.6±0.4 9.6

5.0 ±0 . 2

TO-3PB

2

4.0 max

20.0 min

Φ3.2 ± 0,1

3

5.45±0.1 G

D

S

1

2

3

+0.2 1.05 -0.1

+0.2 0.65 -0.1

5.45±0.1

1.4

D (Drain)

G (Gate)

All dimensions in millimeters(inches)

S (Source)

TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098)

15.49 (0.610) 16.26 (0.640)

20.80 (0.819) 21.46 (0.845)

Drain

5.38 (0.212) 6.20 (0.244)

16.15 (0.242)

3.55 (0.138) 3.81 (0.150) G

4.50 (0.177)Max

D

S 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) (TYP.) 2.13 (0.084)

19.81 (0.780) 20.32 (0.800)

0.40 (0.016) 0.79 (0.031)

1.01 (0.040) 1.40 (0.055) (TYP.)

5.45 (0.215)

5.45 (0.215)

2.21 (0.087) 2.59 (0.102) D (Drain)

All dimensions in millimeters(inches)

G (Gate)

S (Source)

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