A novel manifestation of the Hall effect in conducting materials, semiconductors included, in the temperature range 77 K – 300 K has been experimentally observed. The nature of this phenomenon is the appearance of magnetically controlled currents on the opposite boundaries of Hall devices between which Hall voltage is also generated. The surface currents are a linear and odd function of the strength and direction of both the supply current and the magnetic field. The results are examined
with great number of probes and original measuring methods. This new mechanism is demonstration of the Lorentz force on moving charges in conducting materials. The discovered sensor behavior could enrich the possibilities for surface characterization and determine the key parameters in materials, such as conductivity, carrier concentration and carrier mobility.
