1SV239-tushiba

Page 1

1SV239 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV239 VCO for UHF Radio

Unit: mm

·

Ultra low series resistance: rs = 0.44 Ω (typ.)

·

Useful for small size set

Maximum Ratings (Ta = 25°C) Characteristics

Symbol

Rating

Unit

Reverse voltage

VR

15

V

Junction temperature

Tj

125

°C

Tstg

-55~125

°C

Storage temperature range

JEDEC

JEITA

TOSHIBA

Weight: 0.004 g (typ.)

Electrical Characteristics (Ta = 25°C) Characteristics

1-1E1A

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

VR

IR = 1 mA

15

¾

¾

V

Reverse current

IR

VR = 15 V

¾

¾

3

nA

Capacitance

C2 V

VR = 2 V, f = 1 MHz

3.8

4.25

4.7

pF

Capacitance

C10 V

VR = 10 V, f = 1 MHz

1.5

1.75

2.0

pF

¾

2.0

2.4

¾

¾

¾

0.44

0.6

W

Capacitance ratio

C2 V/C10 V

Series resistance

rs

VR = 1 V, f = 470 MHz

Marking

1

2003-04-02


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