BC807.../BC808... PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
Type
Marking
BC807-16
5As
1=B 2=E 3=C -
-
-
SOT23
BC807-16W
5As
1=B 2=E 3=C -
-
-
SOT323
BC807-25
5Bs
1=B 2=E 3=C -
-
-
SOT23
BC807-25W
5Bs
1=B 2=E 3=C -
-
-
SOT323
BC807-40
5Cs
1=B 2=E 3=C -
-
-
SOT23
BC807-40W
5Cs
1=B 2=E 3=C -
-
-
SOT323
BC808-25
5Fs
1=B 2=E 3=C -
-
-
SOT23
BC808-25W
5Fs
1=B 2=E 3=C -
-
-
SOT323
BC808-40
5Gs
1=B 2=E 3=C -
-
-
SOT23
BC808-40W
5Gs
1=B 2=E 3=C -
-
-
SOT323
1Pb-containing
Pin Configuration
Package
package may be available upon special request
1
2007-06-08
BC807.../BC808... Maximum Ratings Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BC807...
45
BC808...
25
Collector-base voltage
VCBO
BC807...
50
BC808...
30 5
Emitter-base voltage
VEBO
Collector current
IC
Peak collector current
ICM
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
500
mW 330
TS ≤ 130 °C BC807W, BC808W
250
Junction temperature
Tj
Storage temperature
Tstg
Thermal Resistance Parameter Junction - soldering point 1)
Symbol RthJS
mA
1000
TS ≤ 79 °C BC807, BC808
150
°C
-65 ... 150 Value
BC807, BC808
≤ 215
BC807W, BC808W
≤ 80
1For
Unit
Unit K/W
calculation of RthJA please refer to Application Note Thermal Resistance
2
2007-06-08
BC807.../BC808... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BC807...
45
-
-
IC = 10 mA, IB = 0 , BC808...
25
-
-
IC = 10 µA, IE = 0 , BC807...
50
-
-
IC = 10 µA, IE = 0 , BC808...
30
-
-
5
-
-
Collector-base breakdown voltage
V(BR)CBO
Emitter-base breakdown voltage
V(BR)EBO
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
I CBO
VCB = 25 V, IE = 0
-
-
0.1
VCB = 25 V, IE = 0 , TA = 150 °C
-
-
50
-
-
100
Emitter-base cutoff current
I EBO
nA
VEB = 4 V, IC = 0
DC current gain1)
-
h FE
IC = 100 mA, V CE = 1 V, h FE-grp. 16 IC = 100 mA, V CE = 1 V, h FE-grp. 25
100
160
250
160
250
400
IC = 100 mA, V CE = 1 V, h FE grp. 40 IC = 500 mA, V CE = 1 V
250
350
630
40
-
-
VCEsat
-
-
0.7
VBEsat
-
-
1.2
Collector-emitter saturation voltage1)
V
IC = 500 mA, IB = 50 mA
Base emitter saturation voltage 1) IC = 500 mA, IB = 50 mA 1Pulse
test: t < 300µs; D < 2%
3
2007-06-08
BC807.../BC808... Electrical Characteristics at TA = 25째C, unless otherwise specified Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
200
-
MHz
Ccb
-
8
-
pF
Ceb
-
60
-
AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz
4
2007-06-08
BC807.../BC808... DC current gain hFE = ƒ(IC) VCE = 1 V
DC current gain hFE = ƒ(IC) VCE = 1 V
h FE-grp. 16
h FE-grp. 25
h FE
10 3
hFE
10
3
10 2
10 2
105 °C 85 °C 65 °C 25 °C -40 °C
105 °C 85 °C 65 °C 25 °C -40 °C
10 1 -5 10
10
-4
10
-3
10
-2
10
-1
10 1 -5 10
0 A 10
10
-4
10
-3
10
-2
10
IC
-1
0 A 10
IC
DC current gain hFE = ƒ(IC) VCE = 1 V
Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10
h FE-grp. 40 10 3
EHP00215
10 3
ΙC
mA 150 ˚C 25 ˚C -50 ˚C
10 2
hFE
5
10 2
105 °C 85 °C 65 °C 25 °C -40 °C
10 1 5
10 0 5
10 1 -5 10
10
-4
10
-3
10
-2
10
-1
A
10
10 -1
0
IC
0
0.2
0.4
0.6
V
0.8
V CEsat
5
2007-06-08
BC807.../BC808... Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V
Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10
ΙC
mA
10
Ι CBO
150 ˚C 25 ˚C -50 ˚C
2
EHP00213
10 5
EHP00214
10 3
nA 10 4
5
max
10 3 10 1 5
typ
10 2
10 0
10 1
5
10 -1
0
1.0
2.0
3.0
V
10 0
4.0
0
50
100
V BEsat
Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz
Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 65 pF
MHz 5
55
CCB/CEB
fT
TA
EHP00210
10 3
150
˚C
50 45 40 35
10 2
30 25
5
20
CEB
15 10 CCB
5
10 1 10 0
10 1
10 2
mA
0 0
10 3
ΙC
2
4
6
8
10
12
14
16
V
20
VCB/VEB
6
2007-06-08
BC807.../BC808... Total power dissipation Ptot = ƒ(TS)
Total power dissipation Ptot = ƒ(TS)
BC807, BC808
BC807W, BC808W
360
300 mW
300
250
270
225
P tot
P tot
mW
240
200
210
175
180
150
150
125
120
100
90
75
60
50
30
25
0 0
15
30
45
60
90 105 120 °C
75
0 0
150
15
30
45
60
90 105 120 °C
75
TS
150
TS
Permissible Pulse Load RthJS = ƒ(tp ) BC807, BC808
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC807, BC808
10 3
10 4
Ptotmax /PtotDC
-
RthJS
10 2
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0
10 0
10 -1 -6 10
10 3
10
-5
10
-4
10
-3
10
-2
s
10 1
10
10 0 -6 10
0
tp
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
7
2007-06-08
BC807.../BC808... Permissible Puls Load RthJS = ƒ (tp)
Permissible Pulse Load
BC807W, BC808W
Ptotmax/P totDC = ƒ(tp) BC807W, BC808W
10 3
10 3
P totmax/P totDC
K/W
RtthJS
10 2
-
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 0
10 -1 -6 10
10
-5
10
-4
10
-3
10
10 1
-2
s
10
10 0 -6 10
0
tp
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
8
2007-06-08
Package SOT23
BC807.../BC808...
0.4 +0.1 -0.05
1)
2
0.08...0.1
C 0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9 0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example) Manufacturer
EH s
2005, June Date code (YM)
Pin 1
BCW66 Type code
Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel
4 0.2
8
2.13 2.65
0.9
Pin 1
1.15
3.15
9
2007-06-08
Package SOT323
BC807.../BC808...
Package Outline 0.9 ±0.1
2 ±0.2 0.3 +0.1 -0.05
0.1 MAX.
3x 0.1
M
0.1 A
1
2
1.25 ±0.1
0.1 MIN.
2.1 ±0.1
3
0.15 +0.1 -0.05
0.65 0.65 0.2
M
A
Foot Print
0.8
1.6
0.6
0.65 0.65
Marking Layout (Example) Manufacturer
2005, June Date code (YM)
BCR108W Type code
Pin 1
Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2
2.3
8
4
Pin 1
2.15
1.1
10
2007-06-08
BC807.../BC808... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
11
2007-06-08