MetaTEX200 IPA-free Alkaline Texturing State-of-the-art Surface Etching for Monocrystalline Si-Wafers
Smart Solutions to Drive the Future.
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MetaTEX200 IPA-free Alkaline Texturing State-of-the-art Surface Etching for Monocrystalline Si-Wafers
Benefits and Features _ Environmental-friendly IPA-free composition _ No solvent evaporation/ emission _ Safe and easy handling of chemical, process and waste water _ Wide process window _ No analytical bath control required _ Improved etch and reflectance process stability _ Excellent bath lifetime Traditional Texturing Increasing demands to process stability and surface definition are limiting the application of IPA as the common texturing agent in mass production of solar cells. Low boiling point and high volatility of IPA effect difficult process adjustments, short bath lifetimes and high chemical consumption. Advanced Texturing MetaTEX is a new texturing additive, opens the door for a robust new IPA-free texturing process, offering substantial cost advantages compared to traditional etching
systems, completely refrains from using flammable, volatile solvents and enables a stable, wet-chemical texturing process for silicon wafers. With the application of this alkaline texturing process the etching solution lifetime is tripled for the modified SILEX etching system from SINGULUS STANGL SOLAR in combination with _ Shortening of the etching duration at the same time _ Simplified chemical disposal _ Wide process window
_ Reduced process time _ Small, uniform and adjustable pyramide size _ Perfect surface compatibility with subsequent passivation and deposition processes _ Compatible with “as-cut� and etched wafers
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SILEX Etch Equipment and Advanced Alkaline Texturing with MetaTEX200
Application
IPA-free alkaline texturing for mono Si-wafers
Chemicals
KOH/organic additive/DIW
Additive Concentration
1.5~2 wt % MetaTEX200
Features
PreClean SINGULUS STANGL SOLAR BKM* Etch removal 6-8 μm* Process time 15-20 min Bath life time 30-40 runs* Pyramid size 2~5 μm Reflectance < 12 % at 600 nm
Wafer
p-type , n-type mono wafer as cut (wire and diamond) saw damage etched
Environmental Data
BOD = 36 mg/l COD = 556 mg/l
* best known method * per side
* 30 runs as cut, 40 runs SD etched
*
< 12,5 % 400-1100 nm
IPA-Process 130 mg/l IPA-Process 8700 mg/l
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