Bisinfotech Magazine June 2019

EDITORIAL

THE BATTLE OF 5G EDITOR MANAS NANDI manas@bisinfotech.com CONSULTANT EDITOR NILOY BANERJEE niloy@bisinfotech.com SUB EDITOR JYOTI GAZMER jyoti@bisinfotech.com MARKETING MANAGER ARNAB SABHAPANDIT arnab@bisinfotech.com DESIGN HEAD SANDEEP KUMAR WEB DEVELOPMENT MANAGER JITENDER KUMAR WEB PRODUCTION BALVINDER SINGH SUBSCRIPTIONS PRIYANKA BHANDARI priyanka@bisinfotech.com MANAGER FINANCE KULDEEP GUSAIN accounts@bisinfotech.com Bisinfotech is printed, published, edited and owned

by Manas Nandi and published from 303, 2nd floor, Neelkanth Palace, Plot No- 190, Sant Nagar,East of Kailash, New Delhi- 110065 (INDIA), Printed at Swastika Creation 19 DSIDC Shed, Scheme No. 3, Okhla Industrial Area, Phase-II, New Delhi- 110020

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Editor, Publisher, Printer and Owner make every effort to ensure high quality and accuracy of the content published. However he cannot accept any responsibility for any effects from errors or omissions. The views expressed in this publication are not necessarily those of the Editor and publisher. The information in the content and advertisement published in the magazine are just for reference of the readers. However, readers are cautioned to make inquiries and take their decision on purchase or investment after consulting experts on the subject.

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BISINFOTECH|JUNE 2019|VOL 1|ISSUE 06

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nce again, the controversial issue to ban Chinese telecom equipment companies is in the spotlight, where it has been ever since the US and many other countries acted against Huawei for supposedly using its equipment to spy for the Chinese government. The fifth-generation cellular network that promises exponentially faster wireless speeds is the focus of a lot of press, political, and public interest. Any reaction against Huawei will be of concern to telecom operators in India who fear that the cost of rolling out 5G will increase substantially without these equipment.

Chinese manufacturers account for 20 percent of all the equipment bought in India, especially in 4G. Chinese equipment is around 10-15 percent cheaper. But more importantly, unlike the European competitors, Chinese arranges for credit lines at just LIBOR for a period of 10-15 years which is the entire life of the equipment.

From an industry and consumer perspective, people are just ready for that next wave of innovation. People will find ways to use new levels of connectivity whether or not we can imagine it now. If the bandwidth is available, industry and consumers will find ways to maximize it. 5G, which is much faster and has lower latency than 4G, will allow people to download entire movies to their phones in seconds rather than minutes. Such speeds could enable the expansion of everything from self-driving cars to telemedicine, as well as stuff we haven’t thought of yet.

For people who spend an increasing amount of their time online, fast mobile internet is a very good thing. For an economy that increasingly relies on technology companies to increase its wealth, slow mobile speeds are a nonstarter.

Taking charge of the ministry of information technology and electronics in MODI 2.0, Prasad said the government will work towards establishing a National Data Grid on a priority basis which, along with the data protection act, could establish the bedrock for localising all data related to Indian citizens. 5G will play a major role in digital inclusion, social causes, education and health, and bringing technology to rural people.

ManasNandi manas@bisinfotech.com

CONTENT PAGE

06 ENGINEER'S DESK

THE EVOLUTIONARY PATH TO THE 100 A μMODULE REGULATOR

20 34

20 ENGINEER'S DESK BENEFITS OF GAN E-MODE HEMTS IN WIRELESS POWER TRANSFER

42 46

34 WHITE PAPER

A SPOTLIGHT ON INDUSTRIAL INNOVATION POWER STAGES

42 EV FEATURE

UNDERSTANDING THE POWER OF BATTERY MANAGEMENT SYSTEMS

10 BIG PICTURE

SARAH YOST SENIOR PRODUCT MARKETING MANAGER NATIONAL INSTRUMENTS

16 BIG PICTURE

MADHUKAR TRIPATHI HEAD- MARCOM & OPTICAL PRODUCTS AT ANRITSU INDIA PVT. LTD

44 BIG PICTURE

JOEL PERLMAN CO-FOUNDER & SENIOR MANAGING DIRECTOR OAKNORTH AI

46 COVER STORY

DOGMA OF LED DRIVERS WITH MARKET LEADERS

14 BIG PICTURE

JAYANTH RAMACHANDRAN DIRECTOR – MARKET DEVELOPMENT – (WIRELESSCOMM)|R&S INDIA

COUNTRIBUTORS Rich Miron Digi-Key North America Editor

18 BIG PICTURE SANDEEP KAPOOR REGIONAL MARKETING HEAD|EMEIA AND INDIA KEYSIGHT TECHNOLOGIES

Milko Paolucci Infineon Technologies AG

Peter Green Infineon Technologies, Americas Corporation

50 BIG PICTURE

RAFIQ SOMANI AREA VICE PRESIDENT, INDIA AND SOUTH ASIA PACIFIC, ANSYS

ZHONGLIN LI MORNSUN FAE MANAGER

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ENGINEER'S DESK

The Evolutionary Path to the 100 A μModule Regulator Introduction

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A μModule® device resembles a surface mount IC, but they include all the necessary support components that would normally be used to construct a power conversion circuit.

This includes a dc-to-dc controller, MOSFET dice, magnetics, capacitors, resistors, and so on, all mounted on a thermally efficient laminate substrate. They are then encapsulated using a plastic mold cap. The result is a complete power supply that can be simply adhered to a printed circuit board (PCB).

Built to the industry’s highest quality standards, this product family dramatically reduces risk, time, and effort to successfully design high performance, high power density solutions. It is as if we have taken all our power supply expertise and know-how within Analog Devices and put it into an IC-like form factor.

For those of you who have had time constraints for designing power conversion circuits where mass production is only weeks away—and you have had to spend many late nights debugging your supply late into the early morning—those times will be a thing of the past if you use a μModule regulator instead of a “do-it-yourself” discrete solution.

Taking a closer look at the internal construction of a typical μModule product, you will notice that the package options are a land grid array (LGA) or ball grid array (BGA). The internal components used to form the internal switchmode power conversion circuit can be in die form, while others are finished packaged products. Nevertheless, these components are all mounted onto a bismaleimide triazine (commonly known as BT) laminate substrate, which has excellent electrical and thermal properties. Moreover, μModule products are not just about integration, as they provide other properties and performance characteristics over competing alternatives.

Power design expertise is declining on a global basis and there are simply not enough power supply design resources to develop every single power supply at most customers’ sites.

It is reported by the trade press that the average age of a degreed engineer is 57 years—and this is a global statistic, with China having the youngest average.

The top three concerns of power design engineers are: 4 Insufficient people to get the job done.

4 Finding the optimal components for their design.

4 Time-to-market pressures.

Because of these trends, we wanted to deliver a complete power supply that is ready to use off-the-shelf and with all the performance criteria required for the end application.

Furthermore, at the same time, PCB area is at a premium since everyone is trying to pack even more functionality and capability into a smaller space. If this is not bad enough already, thermal design constraints are becoming more complex as designers try to pack more capability into an ever-smaller space while delivering more power in an environment that

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has limited airflow for cooling purposes. Finally, time-to-market pressures are intense as the power supply is one of the last items to be designed in a system and mass production starts can be just weeks away!

PCB area is a critical priority in most designs. For example, any given datacom or telecommunications board is bound to be laden with many digital processors, ASICs, and memory.

All these need to be powered on the board while voltage levels vary from just north of 5 V to as low as 0.6 V, after an intermediate system bus voltage which varies from 12 V to 48 V. At the same time, system designers are continually being asked to pack more functionality into these ever-shrinking form factors—which are probably mutually exclusive!

Design Problems That Needed to Be Solved

Thermal design constraints are becoming more severe. As more and more functionality is packed onto the PCB, the overall power levels needed to power them on the board are increasing. Meanwhile, cooling is at a premium due to heat sinking space constraints and limited air flow volume.

This is a headache for the designer, since there is a maximum internal ambient temperature constraint on the system that cannot be violated without compromising performance and long-term reliability. Time-to-market pressures have increased dramatically in recent years due to both competitive pressures and the need for faster revenue streams. So, the power supply designer is under the gun for getting hispower conversion circuits designed and functional in weeks, if not days!

Simply put, μModule products provide a “simple and done” proven power conversion solution. So, using them means no more late nights of debugging power supplies in the lab!

Of course, these products need to have rigorous quality and long-term reliability to ensure long operational life once they have been deployed in an end system. Accordingly, ADI has engaged in rigorous quality and reliability testing to ensure long-term deployments in harsh environments.

The following is a summary of the testing and data we have accumulated since the introduction of our first μModule product, the LTM4600, back in October of 2005. This includes: 4 Over 22 million power cycles.

4 Over 5 million device hours of hot temperature operational life.

4 Over 2 million hours of mounted temperature cycles to ensure that these modules can operate 24 hours per day, 7 days per week, 365 days per year for a decade without having any intermittent contact issues from the package leads to the PCB. 4Over 25 million temp cycles from –65°C to +150°C. 4 Over 16 million thermal shock cycles from –65°C to +150°C. And remember, this is liquid-to-liquid on a finished power supply!

ENGINEER'S DESK

The end outcome is an FIT rate of <0.4. To put this in perspective, this equates to 0.4 device failures in every billion device hours of operation. And this is on a complete power supply. To put this in context, many of our competitors’ integrated circuits (single silicon in a package) have higher FIT rates!

Packaging Evolution

Let’s take a closer look at the μModule packaging options.

When we first introduced the LTM4600 way back in 2005, we used an LGA package option. The thinking at the time was that since a lot of the VLSI digital ICs had similar LGA form factors, it would be easy for the user to use our μModule products. While this was true some of the time, it was not true all of the time.

Accordingly, it was decided that having a BGA package option would be an innovative idea, too. This turned out to be fortuitous for two reasons. First, it was easier for users who were not used to high volume production of the LGAs. And, secondly, it was easier to put solder balls on the round pin pads. Moreover, it allows for both leaded and lead-free solder balls. And since many μModule device users are in the aerospace and military market segments, they were very happy about this.

Accordingly, the first part we introduced in this product category was named the LTM4600: a 4.5 V to 20 V input/0.6 V to 5.5 V output and up to 10 A of continuous output current.

It was in a 15 mm × 15 mm × 2.82 mm surfacemount LGA package. Its application was 12 VIN to 3.3 VOUT at 10 A with 90% efficiency. Remember, this was October 2005, so this level of performance was ground breaking stuff.

Nevertheless, one of our key metrics was to improve the μModule regulator’s thermal performance so that we could increase its output current density while remaining in same the 15 mm × 15 mm footprint. Since there was clearly a significant thermal issue, we needed to address getting the heat out of the package. To facilitate this goal, our designers had decided to use a BT laminate substrate because it had excellent thermal properties and facilitated taking heat through the bottom of the μModule package and into the PCB where it could be dissipated. While this was acceptable in the mid-2000s, by the time another 5 years went by, our customer-base informed us that they could no longer dissipate most of the heat through their PCB. Instead, it needed to be able to pull heat out of the top of the package and dissipate it into the air! Therefore, we designed a special heat sink that was encapsulated inside the package and connected to the top of the internal MOSFETs and inductors. This heat sink was exposed on the top side of the μModule regulator.

Now the user could add their own heat sink on top of the μModule device to improve pulling heat out of it. If they had 200 LFM or airflow, they could also facilitate better thermal performance. Truly, a win-win scenario.

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ENGINEER'S DESK

Regardless of this enhancement, we continued to evolve and developed μModule regulators with inductors on top since these acted as heat sinks to further improve thermal dissipation qualities.

Finally, it should be mentioned why we introduced our ultrathin μModule devices. We realized that, in many cases, our customers would only utilize the underside of their PCBs with discrete components due to space limitations. It turns out that for many rack-mounted systems, there was a 2.2 mm height restriction for mounting components on the underside of a PCB. Therefore, we developed μModule regulators with 1.8 mm and 1.9 mm maximum heights so that they would easily fit while also helping with space and density issues.

Now, with this background, it is easy to comprehend what is going on with a μModule devices’ thermal performance.

This can be thought of as an evolutionary pathway that has allowed for a continuous improvement of our μModule thermal performance from inception through to our current offerings—a decade plus journey.

Figure 2 shows three thermal imaging photographs, representing several types of μModule regulators with varying types of construction with the goal of increasing the device’s ability to pull heat out of the top of the μModule into free air where it can facilitate additional cooling from air flow within the system, or could also have an additional heat sink that is shared with the VLSI digital ICs that are usually present. The color blue shows low temperature (minimal power dissipation) and colors orange through red show elevated temperatures (high power dissipation). Of course, this is what we want to occur when we want the heat generated by the power conversion process to be pulled out into free air and not into the PCB. While we have been improving the thermal performance characteristics of this product offering, we have simultaneously continued to increase μModule regulators’ power density by putting them into ever-shrinking form factors. Figure 3 shows the LTM4627, a 20 V input device that can deliver

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a 15 A output current as low as 0.6 V with an efficiency in the nominal 90% range depending on the specific VIN and VOUT conditions. Next to this is the LTM4638, which is also a 20 V input device and can deliver a 15 A output as low as 0.6 V with nominal 86% efficiency—pretty close! However, volumetrically, the LTM4638 is 5.6 times less than the LTM4627.

See Figure 3 for a size comparison.

The point being that there is only a small delta in conversion efficiency between these two parts under the same operating conditions, but the footprint and space required for its implementation are orders of magnitude less. All this improvement has all been attained in less than 4 years.

Sojourn to a Single 100 A μModule Device

For a long time, our existing users of high power μModule packages kept asking us for smaller, more efficient, and higher current density devices— even though this feature set might be considered mutually exclusive.

Nevertheless, our design team took this request to heart and began to figure out a way to get us there. From a historic perspective, back in the 2013 to 2016 timeframe, we had μModule regulators in the 15 mm × 15 mm footprint that are capable of delivering output currents in the 26 A to 50 A per device range. It should also be noted that a key matrix measurement for our high power μModule devices is that they should be able to deliver full rated output current from a 12 V input to a 1 V output with 90% conversion efficiency.

The reasoning is that dealing with 10% power lost as heat is usually thermally acceptable within most applications. By late 2016, our 40+ A μModule regulators had efficiencies in the 88% to 89% range—which is very close to this goal.

The progression to get to a 100 A single μModule regulator required us to use multiple devices, as shown below: Thus in 2010, having 12 LTM4601s in a Polyphase® parallel configuration allowed us to deliver a 100 A output from a 12 V to 1 V output.

In 2012, only four LTM4620s in a Polyphase parallel configuration allowed us to deliver a 100 A output from a 12 V to 1 V output.

ENGINEER'S DESK

In 2014, only three LTM4630s in a Polyphase parallel configuration allowed us to deliver a 100 A output from a 12 V to 1 V output.

In 2016, only two LTM4650s in a Polyphase parallel configuration allowed us to deliver a 100 A output from a 12 V to 1 V output. And we have ±1% total dc error over line, load, and temperature.

Finally, in November 2018, we introduced the LTM4700—a dual 50 A or single 100 A output μModule regulator. See Figure 4 for an image of the actual device.

Figure 5 shows a thermal image of the LTM4700 during normal operation. The operation conditions are 12 V to 1 V delivering 100 A of current with high conversion efficiency and only 200 LFM of airflow. As a result, its best-in-class energy efficient performance makes it an excellent choice to reduce data center infrastructure cooling requirements. Taking a closer look at some of the LTM4700’s key specifications: 4 It is a single 100 A output capable μModule device. It can also be used as two 50 A outputs.

4 It is very close to 90% conversion efficiency when stepping down from 12 V to 1 V at 100 A with only 200 LFM air flow.

And it has ±0.5% maximum dc error over temperature.

4 Its x, y, z footprint is 15 mm × 22 mm × 7.82 mm.

In addition to having a dual 50 A, or single 100 A output, the LTM4700 also incorporates a PMBus I2C interface or power system management (PSM).

This enables many different capabilities, including: 4 Configure voltages, define complex on/off sequencing arrangements, define fault conditions such as OV and UV limits, and set important power supply parameters such as switching frequency, current limit, etc., over a digital communication bus.

4 Over the same communication bus, you can readback important operating parameters such as input voltage and output voltage, input and output current, input and output power, internal and external temperature, and, in some of our products, measure energy consumed.

4 U sers can implement very precise closed-loop margin testing of their designs, as well as trim power supply voltages to very precise levels.

4 P SM devices enable higher reliability and quality.

4 Our built-in servo loops will maintain higher power supply accuracy over the life of the product, improving reliability.

4 The readback features of our PSM devices can be used to improve test coverage at in-circuit test and screen out possible defective devices before they get into the field.

4 During the life of the customer’s product, our PSM devices continue to monitor important parameters. Trends in voltage, current, and temperature can be used to profile the power system. Once a good system signature can be found, a flawed system, or one that is about to fail, can be identified.

Conclusion

We introduced our first μModule regulator back in 2005, the LTM4600. It came in a 15 mm × 15 mm × 2.8 mm LGA package and could deliver 10 A of output current from a 12 V input to a 1.2 V output with 89% efficiency. Fast forward 13 years, and the LTM4700 can deliver 100 A from 12 V to 1 V with 89.6% efficiency (and 200 LFM air flow).

But that’s not all: our designers are already working on other modules that can enable even more performance and capabilities.

Tony Armstrong [tony.armstrong@analog.com] is currently the product marketing director for Analog Devices’ Power by Linear™ product group.

He is responsible for all aspects of power conversion and management products from their introduction through obsolescence. Prior to joining ADI, Tony held various positions in marketing, sales, and operations at Linear Technology, Siliconix Inc., Semtech Corp., Fairchild Semiconductors, and Intel. He attained his B.S. (Honors) in applied mathematics from the University of Manchester, England.

Tony Armstrong

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BIG PICTURE

RELATIVELY LOW COST OF SDRs MAKES IT A GREAT TECHNOLOGY FIT FOR INDIA Sarah Yost, Senior Product Marketing Manager from National Instruments connects the potential of SDR and what oddities make it more crony for wireless systems. Sarah, while talking to Niloy Banerjee tangents towards MIMO concept, NI’s commitment towards the development of 5G ecosystem and lot more packed in this interview. Edited Nub.

Sarah Yost Senior Product Marketing Manager |National Instruments

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What key factors are behind the popularity of Softwaredefined radio (SDR) in recent time and How is NI contributing towards this trend?

SDRs take advantage of the low cost tuneable RF front ends and a combination of FPGA and x86 processing. As processors have become smaller and less expensive, it has become possible to implement complex signal processing on (relatively) affordable systems to mimic wireless communications technology. NI has prioritized using high end FPGAs on our SDRs to give users powerful platforms to prototype communications systems.

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What benefits does SDRs bring in next-gen wireless communications systems prototyping?

SDRs have enabled researchers to prototype wireless systems at a price point and performance level that was not available for previous generations of wireless research. Prototyping, and specifically being able to run the full bandwidth physical layer in real time, has allowed researchers to explore how complex technologies will perform in real world scenarios without needing to spin algorithm specific hardware. This way algorithms can be validated and optimized before any hardware design is needed.

https://lumen.ni.com/nicif/US/GB_INFO3GPPRELEASE16/ content.xhtml Here is a limited summary of some hot applications for wireless communications that people are researching using SDRs: • V2X • How to use machine learning and AI to improve wireless networks • Non-terrestrial networks • Terahertz frequencies for communications

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What have been the key reasons behind the development of MIMO concept within an SDR? The key reason for the use of MIMO in SDRs is due to the market demands from the wireless industry. Spectrum is a limited resource, and there is global pressure to make our spectral use as efficient as possible. MIMO is a great way to due this. Because SDRs are able to share clocks and triggers, they have been a great platform to build large testbeds and drive massive MIMO from a theoretical concept to a fully commercialized technology in less than 10 years.

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How is India as a market for SDR? The relatively low cost of SDRs makes it a great What key solution is NI providing in this space and what technology fit for India. There has been a lot of focus on key factors make it a standalone solution in this domain? theory at major Indian Universities and we are seeing SDRs In addition to developing high end SDR hardware, NI has beginning to change that. focused on developing standards-based IP to run these SDRs. There are other major players dominating this market, This gives researchers an advanced starting place for wireless what keeps NI ahead of the competitive curve? research. NI is committed to building standards compliant software for 5G NR to create a platform to research and There are a lot of other players in the SDR market, but validate 5G systems and the deep vertical applications built what makes NI unique is our focus on high performance SDRs and commitment to developing standards based IP. on top of 5G. Many other options are low cost and from small suppliers.

Recent Trends in Software Defined Radio Design and NI provides compliance certifications on its SDRs and Applications? has the ability to ship globally as a trusted supplier to our Check out our 3GPP release 16 white paper for more details: customers.

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TECH COLUMN

NFC for Energy Management AMIT SETHI

Technical Marketing Manager MDG Group STMicroelectronics

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Natural Gas, Water and the Electricity are the prominent resource of energy which is used for domestic, commercial and industrial purpose in the whole world. As the resources are limited, a precaution should be taken to minimize misuses and wastage. A contactless NFC standard based prepaid metering could be the solution to overcome these situations.

This prepayment system can control efficiently the supply of energy in meters installed in the client's site. The basic and common principle of prepayment in energy meters is to buy energy credit in advance and to inform the prepaid meter in some manner. This allows the consumer to decide on how much energy they want and how much to consume. These types of meters give the consumer a greater control over their electricity bills. After the prepaid energy is consumed, the meter gets disconnected automatically, until the energy balance is re-loaded through the NFC functioning.

The main parts of this NFC prepaid system are the payment infrastructure like the vending stations, a meter to measure the accumulated energy and the NFC element, which is used for loading the energy balance.

Vending stations, having the NFC compatible vending units or the smart phones, connected to the utility server, can refresh the energy credits into the NFC card of corresponding amount paid by the consumer. Then, the user must approach the card to the energy meter. These energy meters have the NFC module to read and write the data from the NFC card.

At that moment, the meterâ&#x20AC;&#x2122;s NFC interface recognizes a new balance request and after doing a mutual authentication it

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starts transferring the new energy credit from the smart card to the meter. The received credit is deducted depending on energy usage and when this credit reaches zero, the meter disconnects the load from the mains. If the user wants to use further energy from the mains, they must carry out a further prepayment.

The NFC interface, inside the meter, has the NFC reader/ writer, which operates at 13.56Mhz frequency and supports the ISO15693 & ISO14443 protocols.

Depending on the proximity requirement, different NFC cards could be used. Systems with the long range/low data-rate requirements can use ISO15693 cards or IS014443 for the short range/high datarate requirements.

One of the pioneers of RFID and NFC technology, ST offers a comprehensive range, covering all NFC application needs, supported by a rich ecosystem. The devices include NFC / RFID tags, Dynamic NFC tags, NFC / RFID readers & NFC controllers including secure element for secure NFC applications and turnkey solutions. With the ST25 product family, ST offers a complete portfolio of NFC and RFID tag and reader ICs for a wide variety of NFC-enabled solutions. Currently found in contactless payment, access control and public transport ticketing systems, NFC technology is a convenient, always-on low power short-range wireless link that is driving the growth for convenient pairing, diagnostic readout, data tracking, and parameter setting use cases in Consumer, Industrial, Automotive and Medical applications. Please visit www. st.com/nfcfor more information.

Testing Giants Decodes

Wireless Test Fate

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ireless technologies have evolved at a rapid pace, and for it whom to laud than the test-equipment manufacturers. Without their aptness advanced work in defining new standards, test procedures, and test gear, product R&D wouldnâ&#x20AC;&#x2122;t be possible. RF engineers may need the functions of two or more analyzer types, and often more than they initially purchase. BIS In its June Issue brought along the Tech Veterans in this domain to share their views on the evolving trends and their expertise in wireless testing segment.

BIG PICTURE

WE ARE INVOLVED IN NEARLY ALL AREAS OF 5G WIRELESS DEVICE TESTING

eMBB topics are dominating 5G right now. This means a focus on pushing data rates of wireless devices well beyond LTE limits. Elucidating extensively on the emerging wireless test technology, Jayanth Ramachandran, Director – Market Development – (Wirelesscomm) ruminates about its future and R&S position and strength in this evolving technology. Edited Nub.

Jayanth Ramachandran Director – Market Development – (Wirelesscomm) at Rohde & Schwarz India

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What are the trends shaping wireless test?

Rohde & Schwarz has developed its test and measurement Key technology trends shaping wireless test industry are portfolio to fully address the challenges evolving from the 5G cellular technology, the Internet of Things (IoT), and also introduction of 5G. The instruments provide the required 5G wireless fidelity (Wi-Fi) and, moreover, the growing automotive NR functionality, for example the relevant options on signal market. 5G development is well under way and first networks generators and analyzers to generate and analyze 5G NR are already launched. Also, the first 5G devices are available signals in the uplink as well as in the downlink that are fully for fixed wireless access as well as for mobile applications in compliant with 3GPP Release 15. Full support of test models smart phones in different regions and markets. and the integration of the newly defined 5G NR fading profiles eMBB topics are dominating 5G right now. This means a focus provide a head start to the test engineer. More importantly, on pushing data rates of wireless devices well beyond LTE limits. Rohde & Schwarz has developed OTA solutions in order to The majority of 5G NR commercial deployments are expected solvethis new 5G test challenge. Examples include the R&S in the FR1 frequency range (e.g. at 3.5GHz), however FR2 PWC200 plane wave converter for massive MIMO base station mmWave frequencies (e.g. 28 GHz and 39 GHz) arein focus testing. Or a new and innovative compact test system which as akey enabler for higher data rates. While FR2 is going to has been presented for the first time at MWC2019 for radiation be a game changer, the mmWave technology aspect still measurements on 5G mmWave devices in the range from 20 faces many challenges. For example, true mobility requires GHz to 87 GHz using a compact antenna test range (CATR). beam refinement and sweeping in an active connection. This Finally, R&S test solutions also cover mobile network testing and other challengesdrive the demand for high performance aspects. Scanners and smartphone based test solutions allow test and measurement tools. to access basic parameters like coverage for each individual There isa massive increase in 5G FR1 (450 MHz to 6 GHz or recently beam as well as the user experience in deployed 5G networks. extended in 3GPP to 410 MHz to 7.125 GHz) test requirements Versatility, diversification while keeping the time-toas 5G NR FR1 is going to be widely deployed. Starting now market window in mind, how challenging has this market and continuing beyond the year 2020, mainly non-standalone (NSA) TDD but also FDD and some Standalone (SA) will be become and what strategies does your company comply? the key deployments enabling the wide acceptance of 5G There are many challenges associated with 5G. One of the NR. 5G NR in FR1, just like LTE, enables larger coverage areas, biggest challenges is the sheer flexibility of 5G. Features like with indoor penetration, and overall reliability in a mobility subcarrier spacing (SCS), symbol duration, cyclic prefix duration, environment. LTE applying high orders of carrier aggregation bandwidth, frequencies from 410 MHz to 52.6 GHzand virtualized (i.e. 8CC), high orders of MIMO (i.e. 4x4) and high modulation (core network) functions make 5G complex. In order to fully up to 1024QAMand operated in NSA with 5G NR enables test 5G, the test equipment needs to be incredibly flexible to extreme data rates. FR2 can further enhance these eMBB reduce the need for dozens of different test solutions.

At Rohde & Schwarz, we have been focusing specifically on data rates in limited coverage areas. providing the industry with adequate test solutions across With advanced and complex technologies like 5G keeping the entire wireless product development cycle. Secondly, the market ebullient how wireless testing instruments because of the move towards mmWave, we have been evolve to cap the trend? successfully working to expand our measurement capabilities

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BIG PICTURE

from conducted testing to over-the-air (OTA) testing that will play a major role in 5G FR2.

We are involved in nearly all areas of 5G wireless device testing.

Protocol stack development, RF and antenna design at FR1 and FR2 frequencies, data performance, device reliability, service &repair, production/manufacturing, conformance (PTCRB/GCF), compliance (CTIA/FCC/ETSI) and network operator related supplemental testing as well as mobile network testing are all our specialties.

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Traditionally, RF experts used expensive equipment hence selected organisations used to buy high-end instruments. Given the demand of the market, do you think more economical signal analyzers can be availed with same specs and features for mass under buyable bracket?

Among our solutions for the midrange market are the new R&D and production test solutions family supporting 5G bandwidth and RF requirements, namely The R&S FSV3000 and the R&S FSVA3000 spectrum analyzers, available with up to 400 MHz analysis bandwidth and up to 44 GHz frequency and covering all relevant 5G NR frequency bands. Designed with an ease of use in focus, the R&S FSV3000 features an innovative user interface, helping users set up complex measurements in the easiest and fastest way. It is the right instrument in the lab and in a production line. The up to 200 MHz analysis bandwidth is enough to capture and analyze two 5G NR 100MHz carriers at once. The R&S FSVA3000 features an analysis bandwidth of up to 400 MHz, a high dynamic range and an outstanding phase noise of –120 dBc/Hz, delivering a performance which until recently was reserved for high-end instruments. Users are capable to perform more demanding measurement applications such as linearizing power amplifiers, capturing short events or to characterizing frequency agile signals. Both, the R&S FSV3000 and R&S FSVA3000 can measure EVM values better than 1% for a 100 MHz signal at 28 GHz, making the analyzer family great fit for analyzing 5G NR signals.

enables calibrated and corrected measurements applied in real time. A particular challenge results from the implementation of highly integrated devices, including antennas operating in the cmWave/mmWave spectrum. These devices require over the air (OTA) testing and additional shielded chambers.

The test setup also has to be carefully calibrated in order to compensate for cable, antenna and over the air path loss.

Mastering the OTA test challenge requires strong RF knowledge, which has already been available at Rohde & Schwarz for over 40 years.

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For mmWave, test economics must improve in order to scale mmWave technology from small volume applications to mainstream (high volume) consumer applications. Your focus into mmWave testing technologies.

For sub 6 GHz FR1, most testing is still conducted due to available RF connectors. However, in mmWave FR2 user devices will be tested OTA only, significantly affecting the overall test procedures. This means different test setups using anechoic shielding boxes are needed. OTA also requires usually far field (FF) conditions. In order to reduce complexity and costs by minimizing the space between the DUT and measurement transceiver, indirect far field (IFF) methods have been introduced. IFF methods such as compact antenna test range (CATR) create far field conditions in close vicinity to the DUT by bouncing the signal with the help of a reflective mirror. Especially in OTA conformance testing in FR2 the “black box” method has to be applied. In this approach it cannot be assumed that the person testing a device has knowledge about the device’s interior, such as the size and placement of the antenna(s).

Thus, the entire device is considered a potential radiating element, since the actual antenna can be anywhere inside the device. This can also be addressed by a CATR setup easily since it creates a big quiet zone so the entire device can be covered. These examples illustrate some of the challenges involved with mmWave range 5G testing.

Rohde & Schwarz has developed its test and measurement portfolio to fully address the challenges evolving from the introduction of 5G.

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5G in the sub 6GHz spectrum will employ signals that use 100 MHz or 200 MHz of spectrum, compared to only 20 MHz in 4G LTE systems. Hence need of new calibration techniques will be needed, what are your takes to it?

Indeed the increase in bandwidth as well as operation at high frequencies require access and compensation from non-linear components used in the test setup. Even cables and adapters, which have almost no impact on the test results in FR1, may become critical at FR2 frequencies. Signal generators and spectrum and signal analysers from Rohde & Schwarz provide an easy to use correction functionality, which allows adding calibration files onto the instruments. This

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Lastly, your dominance in the wireless testing space, one key product and your comments, respectively.

Our recently released, highly anticipated key product is the R&S CMX500 radio communication tester that allows for 5G NR signaling test in sub6 GHz (FR1) and mmWave (FR2) frequency bands for 5G NR. The R&S CMX500 can be seamlessly integrated into an existing LTE test environment by interworking with the well knownRS CMW500 which is the industry standard for LTE and LT-A testing and is also ideal for tests in 5G NR standalone (SA) mode. The solution makes it possible to comprehensively test the signaling protocol, RF parameters and IP data throughput rates of simultaneous LTE/5G connections in dual connectivity mode.

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5G TESTING MARKET IS GROWING FROM R&D TO PRODUCTION TO FIELD TESTING Wireless technologies have evolved at a rapid pace and for it whom to laud than the test-equipment manufacturers. Without their aptness advanced work in defining new standards, test procedures, and test gear, product R&D wouldn’t be possible. RF engineers may need the functions of two or more analyzer types, and often more than they initially purchase. In this column, Madhukar Tripathi, Head- MARCOM & OPTICAL PRODUCTS at Anritsu India Pvt. Ltd pens down emerging trends and Anritsu’s competence in emerging wireless test technologies.

Madhukar Tripathi Head- MARCOM & OPTICAL PRODUCTS at Anritsu India Pvt. Ltd

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What are the trends shaping wireless test?

including RF, protocol, and use-case tests matching the module construction. Anritsu—the leader in 4G testing—is also now taking the lead in 5G. All world leading chipset R&D, manufacturing companies are using Radio Communication Test Station MT8000A to lead 5G terminal market.

Wireless testing market is growing due to introduction of fifth generation telecom standards i.e. 5G. 5G created a new thought process towards various new use cases. This means new application oriented technological development is shaping in telecom sector. Therefore 5G testing market is Versatility, diversification while keeping the time-togrowing from R&D to production to field testing. market window in mind, how challenging has this market Connected Cars ,IoT, IIoTsome of the new areas where wireless become and what strategies does your company comply? technology will play a key role.

Anritsu has been industry leader for test and measurement With advanced and complex technologies like IoT, requirement of all new technologies. We work closely with 5G keeping the market ebullient how wireless testing telecom leaders to provide them application specific testing instruments evolve to cap the trend? tools and help them for time to market.

Due to new wireless standards related to 5G, new test methods Anritsu has leveraged its long experience in supporting have evolved. Anritsu is ready to address such testing need. worldwide customers’ 3G/4G (LTE) testing needs to develop Our Field Master Pro MS2090A is suitable for 5GNR base station a full range of 5G measurement solutions for makers of measurement – Field Master Pro validate the performance of the gNB base station with essential measurements that are in full compliance with 3GPP TS 38.104 V15 RF technologies are reaching into ever more areas of our lives and the RF spectrum at all frequencies is becoming more crowded. In addition to the spectrum demands of cellular systems sub-6 GHz for mobile applications, 5G radios are now being deployed at 28 GHz and 39 GHz. 5G radios are implementing new technologies including Active Antenna Systems that use beamforming to maximize range and efficiency. This is forcing changes to the way networks are tested, including a move toward over-the-air testing and use of test model waveforms.

Radio Communication Test Station MT8000A is a new platform 5Gproducts, including chipset vendors. for developing 5G communications terminals, chipsets and Radio Communication Test Station MT8000A supports both devices. With support for both signaling and RF tests, this all- 5G NR RF measurements and protocol tests in sub-6 GHz in-one platform can be configured easily for various tests, and millimeter wave bands with the base station emulation

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function. Moreover, it supports not only 5G SA (Standalone) but also NSA (non-Standalone) mode with the customer's existing LTE measurement assets.

transmitter measurements – including: harmonic, spurious, occupied bandwidth, channel power, and adjacent channel power – ensures conformity to regulatory requirements • Microwave radio links – with a frequency option up to 54 GHz For mmWave, test economics must improve in order to and exceptional sensitivity for dish alignment, power and scale mmWave technology from small volume applications modulation bandwidth can be verified during installation to mainstream (high volume) consumer applications. Your or maintenance testing with a waveguide horn antenna. focus into mmWave testing technologies.

• Satellite system monitoring – ideal for monitoring downlink Understanding in-building propagation will be important signals to search for interference and noise for the success of the coming 5Gmobile communication • 5GNR base station measurement – validate the performance technologies. Anritsu is a leader in mmWave measurement of the gNB base station with essential measurements that test equipment and offers both equipment and software to are in full compliance with 3GPP TS 38.104 V15, including: make it easy to measure in-building coverage of the new frequency error 5G spectrum. time offset Power Master MA24507A: Power Master is an ultraportable, cell/sector ID USB-powered mmWave power analyzer that enables simple, modulation quality numeric, frequency-based measurement of RF power from 9 unwanted emissions kHz to 70 GHz and as low as -90 dBm. Traditional power meters occupied bandwidth are broadband and have limited power ranges, so engineers adjacent channel leakage ratio and technicians are using spectrum analyzers that include transmitter spurious to 12.75 GHz many unneeded features, cost hundreds of thousands of EIRP dollars, and take up half the test bench just to make simple, synchronization signal block (SSB) frequency-based RF amplitude measurements. The Power • 5G coverage mapping – receive a clear representation of the Master MA24507A enables those measurements in a USBsignal strength of 5G transmitters over intended geographic powered device slightly bigger than a smartphone and at a area by continuously measuring RF data – including 5G fraction of the price of a spectrum analyzer. channel power, EIRP, or RSRP – with results graphically displayed on a digital map or building floor plan.

• Low power capability to measure signals as low as –90 dBm Lastly, your dominance in the wireless testing space, one • Excellent for over-the-air testing, especially with mmWave key product and your comments, respectively. signals that have high propagation loss • User settings to control measurement speeds and noise floor • Channel Monitor mode in PowerXpert for monitoring up to six frequency channels at once • Power Hunter mode in PowerXpert for searching up to six signals within a frequency range • Mounting holes for direct mounting to connect probes for over-the-air or on-wafer testing

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Field Master Pro MS2090A Anritsu’s Field Master Pro MS2090A RF spectrum analyzer delivers performance never previously available in a compact, handheld instrument. With continuous frequency coverage from 9 kHz to 54 GHz, the Field Master Pro MS2090A is specifically designed to meet the challenges a full range of other wireless technologies in use today, including: 5G, wireless backhaul, aerospace/defense, satellite systems, and radar.

Applications: Delivering the highest levels of performance available in a handheld RF spectrum analyzer, the Field Master Pro MS2090A instrument gives field engineers and technicians unparalleled measurement accuracy previously reserved for only benchtop instruments.

• Interference hunting and spectrum clearing networks – fast sweep speeds, low distortion front-end, and spectrogram display help deploy new network efficiently, ensuring spectrums are clear and validating that all legacy users have stopped all transmission.

• Broadcast transmitter analysis – a comprehensive range of

Radio Communication Test Station MT8000A

All-in-One Support for RF Measurements and Protocol Tests in Sub-6 GHz and Millimeter Wave Bands With a 5G base station emulation function, a single MT8000A test platform supports both the sub-6 GHz, including band n41, and the millimeter wave bands used by 5G. Combining it with the OTA Chamber enables both millimeter wave band RF measurements and beamforming tests using call connections specified by 3GPP. Feature: • All-in-One Support for RF Measurements and Protocol Tests in Sub-6 GHz and Millimeter Wave Bands • Supports mm-wave band RF measurements and beam forming tests combined use with the RF chamber.

• Flexible Platform using Modular Architecture • Supports Existing LTE Test Environment

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COEXISTENCE IS ESSENTIAL FOR STABLE, RELIABLE COMMUNICATION IN IOT

Marking the trends and Keysight’s prudence in the quadrupling wireless test segment, Sandeep Kapoor, Regional Marketing Head – EMEIA and India enlightens Niloy Banerjee on the market principles, the spectrums and how Keysight is keeping the tempo exhilarating through their solutions. Edited Nub.

SANDEEP KAPOOR Regional Marketing Head|EMEIA and India|Keysight Technologies

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What are the trends shaping wireless test?

Coexistence is essential for stable, reliable communication in the Internet of Things (IoT). Without coexistence, IoT devices cannot be counted on, to operate as intended in crowded wireless environments. Your device may be unable to detect other IoT devices or cooperatively share the airwaves and may behave in unexpected or even dangerous ways. It is challenging to ensure IoT device coexistence. You cannot have a high degree of confidence about coexistence unless you take appropriate actions during the design process.

The single most important action you can take is to perform coexistence testing. This helps determine device’s tolerance to other radio signals and characterizes its behavior in the presence of alternate radio protocols. Coexistence testing is the only way to accurately evaluate the device’s ability to maintain its functional wireless performance (FWP) in the presence of intended and unintended (interfering) signals.

While 5G standards are advancing, it is marking a new turning point in how the low-latency wireless networks and ultra-reliable networks are going to be tested and prototyped. Higher data rates, lower latency, component miniaturization, wideband signals are primarily driving the 5G design ecosystem. This will in turn lead to unique channel measurement demands.

The major trends driving wireless testing are: Software defined testing:T&M industry earlier relied on hardware-centric benchtop instruments. Currently, it is more inclined towards software-defined approach. Software-defined approach helps create efficient test kits comprising of highly complex RF designs for 5G test suites. It helps engineers develop multiple test programs for 5G technologies and standards.

Test kits can further adopt 5G specifications faster through software and accelerate 5G deployment. Software-defined Versatility, diversification while keeping the time-toapproach also helps in upcoming 5G challenges by futuremarket window in mind, how challenging has this market proof test programs.

Over-the-air testing: Ongoing shift in wireless testing is the become and what strategies does your company comply? adoption of OTA test methodology, instead of attached There are three principal areas that can deliver faster time the device under test using cable. 5G designs in addition to market and improved efficiency in product development. are adopting techniques like system-in-packaging and Firstly, using a product development process. If you do not have taking it to a whole new level. In 5G context, OTA testing a defined product development process, this is an obvious encompasses challenges such as handling components like place to start. The challenge is establishing a process that fits wireless transceivers, power amplifiers, antenna modules, etc. your organization’s business model and culture so that it really System-level approach:While software usage is increasing gets used. Remember, this is all about managing the risk in the for wireless testing, hardware element does not completely project. Secondly, adopt a set of software tools that effectively prelude. Combination of both software and hardware help in manage your product development data. Reduce the prototyping 5G standards like NB-IoT and eMTC. To manage amount of time your engineers are spending on just managing complex antenna architectures and multi-channel RF designs, data, which may be as high as 20%. Eliminate wasted effort a system level approach is critical. As standards are evolving, by sharing the design/ test/measurement data easily across combination of services, software and instrument can help the organization. Ensure your system is low maintenance and easy-to-use otherwise the hidden costs creep back in. Adopt tackle challenges from different parts of the workflow. open system components to maintain flexibility, easy data With advanced and complex technologies like IoT, 5G import/export and portability. Lastly, use insight from the data is keeping the market ebullient. How wireless testing to shorten the innovation cycle.Significant improvements can instruments evolve to cap the trend? be made by shortening each phase of product development

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and the hand-offs between each phase, but the bigger payoff is likely to come from skipping entire design/prototype cycles.

This payoff comes from applying data analytics across the product development cycle. A key factor here is establishing continuity and consistency between the tools used in the lifecycle so that design decisions and physical reality match.

Maintaining and improving that match enables better design decisions, shortening the innovation cycle.

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Traditionally, RF experts used expensive equipment hence selected organizations used to buy high-end instruments.

Given the demand of the market, do u think low-end signal analyzers can be availed with same specs and features for mass under buyable bracket?

Keysight technologies has always ensured that its electronic instrumentation solution reaches various categories of users, whether it is simulation & modelling, design, validation, conformance testing, verification, manufacturing, installation & maintenance, repair etc…. In this direction, Keysight has come up with different form factors to suit the aforementioned needs as well as suitable price points. Whether it is deep dive R & D, design etc… or Go-No Go manufacturing test, Keysight has appropriate solutions to cater to customer needs.

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5G in the sub-6GHz spectrum will employ signals that use 100 MHz or 200 MHz of spectrum, compared to only 20 MHz in 4G LTE systems. Hence, need of new calibration techniques will be needed. What are your takes to it?

Spectrum is a key enabler for 5G New Radio (NR) data throughput and capacity gains. However, it is not as simple as just adding new operating bands. Operating bands at different frequencies can experience interference issues, especially in the mid- and high-bands, that can affect the ability to provide peaceful coexistence with neighboring bands. Adding 5G, NR to an already crowded and congested spectrum increases the potential for interference. 5G NR needs to coexist with LTE, in adjacent bands and sometimes within the same frequency bands. 5G NR bandwidth parts (BWP) enable LTE and 5G NR signals to have a carrier, introducing new challenges with interference due to closely spaced and sometimes overlapping signals.Techniques such as licensed-assisted access (LAA) enable use of unlicensed spectrum through aggregation of a secondary channel. Performance of a device transmitter at the edge of the band and outside the band can cause interference with other wireless communications systems.

In-band and out-of-band emissions must be understood to minimize interference within the band and in adjacent frequency bands. It is very important to evaluate unwanted emissions from harmonics, intermodulation spurs, and spectral regrowth to understand how the 5G NR signal will interact with other radio signals.

result, wireless equipment manufacturers need to support a more rapid pace of development while addressing evolving 5G New Radio (NR) specifications. Most 5G mobile devices operating in mmWave frequency spectrum rely on modules with highly integrated RFIC architectures. This requires new 5G designs to be verified across both intermediate frequencies (IF) and mmWave frequencies. Since 5G mmWave devices use phased-array antennas that lack connectorized ports, performance validation needs to take place in Over-theAir (OTA) test environments. Creating and maintaining a calibrated system when using multiple platforms to perform measurements in OTA test environments can be challenging and lead to unreliable measurement results. Keysight’smmWave 5G non-signaling solution enables validation of a broad range of 5G modules in OTA test environments. Its single wideband transceiver (E7760B) and remote radio head (M1740A) provide tunable access across four mmWave frequency bands. Our solutions span the entire 5G workflow. The E7760B wideband transceiver and M1740A mmWave transceiver for 5G are one solution of the mmWave 5G solutions.They tests 5G module performance over any 3GPP-defined mmWave bands with a single remote radio head, re-uses remote radio heads across multiple Keysight measurement solutions and reduces system complexity with a single compact solution covering IF and multiple mmWave bands for both transmit and receive paths.

The M1740A mmWave transceiver for 5G is a versatile remote radio head covering multiple frequency bands. It is used as a key component of several Keysight 5G solutions to test at mmWave frequencies. Two mmWave ports provide transmit and receive paths between the device under test and the test and measurement equipment in the solution. It supports all 3GPP specified 28 GHz, 39 GHz, and 40 GHz bands in FR2.

E77607 wideband transceiver helps generate simultaneous signal generation and analyses independent frequency and power. It has two bi-directional IF ports and six RF ports for multiple device testing.

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Lastly, your dominance in the wireless testing space, one key product and your comments, respectively.

Keysight Technologies Wireless test platform UXM (E7515B) is one of its kind 5G test solution which offers end-to-end test in the 5G technology space among others. Keysight’s 5G Solutions enable 5G device ecosystem to accelerate from development to deployment. Solutions span and connect the entire device workflow from R&D and design validation, to conformance verification, carrier acceptance and manufacturing. Integrated software-centric approach, with a common scripting engine, 5G stack and advanced analysis tools allows users to eliminate disconnected workflows across the device ecosystem and between teams to achieve more cost-efficient test methods. Exploit a high level of flexibility and control to fast-track test case creation and gain deeper For mmWave, test economics must improve in order to insights from your analysis processes. This ensures complete scale mmWave technology from small volume applications dominance in the 5G space with full test suite. In addition to mainstream (high volume) consumer applications. Your to this, with marriage of High speed digital test &RFuW and focus into mmWave testing technologies.

Wireless technologies, Keysight Technologies high bandwidth Mobile operators around the world are accelerating 5G oscilloscopes like the UXR, among others, help users facilitate deployments to capture early market opportunities. As a test with high speed digital equipment in the wireless space.

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Benefits of GaN e-mode HEMTs in

WIRELESS POWER TRANSFER GaN power devices in resonant class D and class E radio frequency power amplifiers

Milko Paolucci

Applications Engineer for Consumer and Industrial Wireless Charging Infineon Technologies AG

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Peter Green

Applications Manager for Renewable Energy, Infineon Technologies Americas Corporation

ENGINEER'S DESK

Abstract

Wireless charging for portable devices dispenses with the need for conventional adapters/chargers with their associated cables and connectors. Although the technology has existed for some time and some smartphones support wireless charging for a while, only recently have tablets and notebooks had this capability. It is expected to become widely adopted within the next few years for other applications as well.

The following paper demonstrates the advantages of gallium nitride (GaN) enhancement mode (e-mode) HEMT devices over MOSFETs in two power amplifier topologies that have been proposed for wireless power transfer according to the baseline specification of the AirFuel Alliance.

Introduction to resonant wireless charging

Currently, the most commonly used wireless charging standard is the inductive (Qi). Wireless charging systems that rely on the Qi standard operate by inductive coupling at frequencies in the 100 to 300 kHz range. This system allows charging of a single device only that needs to be placed very close to the charger in a specific orientation. With the increased interest in wireless applications for transmitting power in the consumer and industrial market, alternative implementations such as class D and class E resonant inverter topologies gain the attention of power conversion designers to leverage the advantages of resonant coupling. These topologies are not new and are already used successfully in radio frequency (RF) applications where the terminology â&#x20AC;&#x153;amplifierâ&#x20AC;? is widely used to describe them. The main appeal for these topologies employed in the transmitter section of the wireless charging system - as showed in Figure 1 - is the achievable high efficiencies at operating frequencies in the 1 to 10 MHz range. The AirFuel Alliance (formed in 2015) proposes a method switching at 6.78 MHz in the ISM (industrial, scientific and medical) frequency band that uses resonant inductive coupling in which high Q factor resonators enable power transfer over much greater distances using the much weaker magnetic fields in the peripheral regions. This enables the charging of several devices at the same time placed in any orientation.

Faradayâ&#x20AC;&#x2122;s law states that an electric potential is generated by a coil of wire when the magnetic flux in this coil varies. In wireless power transfer an RF power amplifier drives a power transmitting unit (PTU) consisting of a coil in a tuned circuit to produce a varying magnetic flux. A power receiving unit (PRU) also consisting of a coil in a circuit tuned to the same frequency, intersects the magnetic field so that a voltage is induced. This voltage depends on the rate of change of flux and number of turns. Output from the receiver coil is rectified and converted to the desired level for the portable device being charged. Coupling depends on the separation between the two coils, defined by the coupling factor k.

A k of less than 0.5 represents a loosely coupled system as used in magnetic resonance coupling. Figure 1 shows the system blocks of the PTU and PRU. Microcontrollers with Bluetooth communication (according to AirFuel standard, in-band communication also possible) are used to request and regulate the amount of power transmitted as required by the devices being charged.

Figure 1 Wireless power transfer system blocks

Gallium nitride versus silicon technology

GaN technology is relatively new compared to silicon. Its merits have been already proved in RF systems and it is now gaining attention for many power applications due to the significant improvements in the figures of merit (FOM) that have been achieved

Figure 2 FOM comparison between gallium nitride (grey) and silicon technology (different vendors; green, pink, cyan)

Figure 2 shows the improvements of GaN technology in comparison to the state of the art silicon technologies coming from different vendors. The logarithmic scale helps to understand the quantum leap that GaN technology is offering, almost one order of magnitude for all FOMs.

2 Class D power amplifier 2.1 Topology overview Figure 3 shows a simplified schematic for a class D amplifier which is very similar to an inverter that converts a DC input to an AC output.

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high switching frequency requires ZVS operation. One of the most common methods to implement ZVS operation is to use an additional series LC network to create a triangular shaped current higher than the load current.

Figure 3 Class D power amplifier simplified schematic

In order to understand the class D functionality it is useful to divide the schematic into two main blocks: 1. The switches: these will create a rectangular periodic waveform with VIN amplitude.

2. T he filter: LC filter will create a sinusoidal waveform, removing as much as possible the harmonics, at the same frequency of the incoming squared waveform. The further operation of the LC resonator is to block the DC voltage, therefore across the load there will be only an AC signal around the zero level.

Given this simple understanding the voltage across the load can be easily calculated considering a sinusoidal current given by the first harmonic of the filter. At the resonant frequency the LC impedance is zero.

The output voltage (peak to peak) at the load, considering the first harmonic, will be: Equation 1 The output power will therefore be:

Equation 2

In the design phase of a wireless charging transmitter normally the output power of the transmitting coil is one of the inputs (which is here indicated with POUT), meanwhile the input voltage is one of the design parameters.

Equation 3 provides, once the output power is known, a method to determine the input voltage necessary to reach that power (assuming 100% efficiency).

Equation 3

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2.1.1 Class D ZVS transition The class D topology works in ZVS turn on commutation since the operating frequency is 6.78 MHz, therefore the commutation losses could be very high leading to low efficiency. This also depends on the input voltage but normally, since the transmitting antenna is not capable of high current operation (typical currents for transmitting antennas are in the range of 1-2 A) in order to be able to transmit a significant power, relatively high input voltages (50-100 V) have to be used. So the combination of high voltage and

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Figure 4 Class D simulation schematic with ZVS network

In order to guarantee the ZVS operation the current created in that way has to ensure the transition of the middle point of the half bridge (VSW in Figure 4) before the dead time is expired. This gives the following design rule for the class D topology: Equation 4 Where the QOSS is the output charge of the switch evaluated at the input voltage and the Î&#x201D;I is the ripple current generated by the ZVS network (LZVS + CZVS). Equation 4 shows that the lower the output charge of the switch the lower will be the ZVS ripple current, or in other words if the ripple current is fixed the lower is the QOSS the easier will be to guarantee the ZVS transition.

The power losses related to the ZVS network are the dominant losses (see simulation results). They can be calculated as:

Equation 5

Where the IZVS_RMS is the RMS current through the ZVS network and the ESRZVS is the parasitic equivalent resistance of the ZVS network, which is predominantly concentrated in the ZVS inductor.

ZVS operation depends on the load appearing resistive which requires a suitable impedance matching network to be included. The system will maintain ZVS operation within a defined set of corner impedance values known as an impedance box. It is preferable to use switches with low QGD to yield lower losses in case of non-ZVS operation.

2.2 Advantages of GaN in class D At system level the largest loss contribution is the DC resistance of the ZVS inductor and other resistances inserted in the ZVS path accounting for more than 50%. Once the ZVS inductor is chosen, these losses are related to the ripple current and therefore to the QOSS device parameter. Reducing QOSS will greatly improve the losses. The remaining losses are equally distributed between the upper and lower switches

ENGINEER'S DESK

since this topology works with 50% duty cycle. At device level the highest contribution comes from the gate charge (QG), therefore a device with lower gate charge is essential but also a lower threshold voltage is desirable since this will lower the driving voltage allowing for further reduction of the driving losses. The simulations above were run with a pure resistive load, however considering that ZVS might is not guaranteed under all working conditions the switching losses are also considered. Low QGD is desirable in this case to avoid excessive losses.

2.2.1 Silicon versus GaN comparison It is possible simulate a class D topology complete with ZVS network to check the performance (based on device models) and see the improvements expected using GaN technology to replace silicon.

Figure 5 Loss comparison between GaN solution and silicon solution

As visible in Figure 5, the reduction of power losses between silicon and GaN is in the range of 30%. The simulations were run with equal dead times, however dead time optimization would further reduce the losses for GaN; for instance half of the dead time will reduce the losses by half as well. It is also noticeable that the device area is half for the GaN solution, creating an increase of power density of more than double.

Class E power amplifier 3.1 Topology overview The single ended class E RF power amplifier topology consists of an RF inductor L1, which supplies an approximately DC current to the switching FET Q1, a resonant circuit and a load (see Figure 6). Q1 switches at 6.78 MHz with a fixed 50 percent duty cycle. When the circuit is tuned to the same frequency a half sinusoidal voltage appears at the drain which peaks at 3.56 times the DC input voltage (VIN), and

Figure 6 Single-ended class E amplifier main circuit elements

falls back to zero just before the start of the next switching cycle thus operating with zero voltage switching (ZVS). In order for this to be possible, the load impedance must be purely resistive. An impedance matching network is placed between the power amplifier and the transmit resonator, designed to cancel out all reactive elements.

The values of L2, C1 and C2 are determined according to the resonant frequencies of the two switching states. When the switch is off, C1 in parallel with the drain to source capacitance of Q1, contributes to the higher resonant frequency. When it is on the lower resonant frequency is determined by L2 and C2 only. For ZVS operation the switching frequency must lie between the higher and lower resonant frequency, and the sum of the periods of one half cycle of each resonant frequency must be approximately equal to the period of the switching frequency.

If the circuit resonance is higher than the switching frequency the drain voltage rings to a higher peak, which can be up to 7 times VIN, and it will fall to zero before the start of the next switching cycle so that body diode conduction occurs during the intervening period. If on the other hand the circuit resonance is lower than the switching frequency, the drain voltage will not be zero at the start of the next switching cycle.

This creates hard switching with very high losses at 6.78MHz. To attain high power amplifier efficiency the circuit must be correctly tuned and in addition the output current should not be too high since this creates power loss in L2 resulting from conduction losses and eddy current losses due to the skin effect which is significant at 6.78MHz. The PRU and impedance matching network should then be designed to develop a high ZTX_IN for the power amplifier load.

3.2 Advantages of GaN in class E

A class E power amplifier rated up to 16W was tested using a 200 V, 125 mΩ OptiMOS™3 switch, the BSC12DN20NS3.

To evaluate power amplifier performance and efficiency a resistive load was used and measurements taken at 25 Ω, 15 Ω and 5 Ω. The efficiency was measured at 91-92 percent in each case. The operating waveforms for 25 Ω are showed as follows:

Figure 7 Single-ended class E amplifier operating waveforms with Silicon MOSFET

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In Figure 7 the red trace shows the drain voltage waveform.

It is observed that the shape is not a pure half sinewave, displaying a spreading characteristic at lower voltages which prevents it from falling all the way to zero before the next switching cycle resulting in some hard switching.

This effect is caused by the effect of the MOSFET COSS on the upper resonant frequency of the circuit. In silicon MOSFETs COSS increases considerably at lower voltages which creates this distortion. Although the circuit is able to operate with acceptable efficiency and the switching losses caused by the small amount of hard switching are not high, this is still problematical. The circuit has to be retuned resulting in a higher peak voltage, which reduces the maximum power capability and output impedance range over which the power amplifier can operate without reaching the MOSFET avalanche rating BVDSS. A GaN HEMT with the same BVDSS and RDS(on) ratings was also tested in the same circuit. Figure 8 shows the comparison of the COSS characteristics for the two power switches plotted on a logarithmic scale revealing that in the GaN device the increase is much less, though the quoted value at VDS of half BVDSS is very similar.

The drain waveform for the GaN based is seen to be much more sinusoidal than in the MOSFET example. The hard switching is not present and the peak voltage is equal to 3.56 times VIN indicating that the circuit is operating at the theoretical optimum. This allows operation over a wider range. Furthermore in practice the circuit is easier to tune and led prone to drift caused by tolerance and temperature.

It is clear that GaN enables the class E circuit to operate in the optimum manner where silicon does not, therefore offering improved efficiency and able to support a wider load impedance range.

Figure 9 Single-ended class E amplifier operating waveforms with GaN HEMT

Conclusion

The advantages of GaN devices in wireless power transfer, which apply for both topologies discussed are summarized as follows:

4.1 Lower gate charge loss

GaN devices are typically driven with 5 V gate drive voltage as opposed to standard silicon MOSFETs that are typically driven around 10V. The gate charge (QG) for the GaN device is about one fifth of that for a MOSFET or similar RDS(on) and VBRR, which results in significantly lower gate drive current and far lower losses in the gate driver IC. In order to minimize gate charge loss it is preferable not only to choose low QG but also to use device technology with low gate threshold voltage allowing the designer to use lower driving voltage, therefore decreasing the overall losses related to the driving circuitry.

The gate charge losses can be calculated as:

Equation 6 Where the QG_SYNC is the gate charge at voltage Vdr without the QGD (since it is assumed a ZVS transition), fSW is the switching frequency, and Vdr is the driving voltage.

4.2 Body diode losses Though GaN HEMT devices do not have an actual body diode like a MOSFET, they do exhibit a diodelike behavior.

Another important source of system losses is the body diode forward voltage which is, in fact, higher in GaN devices.

Losses occur due to the ZVS commutation during turn on which can become relatively high if long dead times are chosen. To obtain best performance with GaN, dead time should be reduced to avoid body diode conduction.

Figure 8 COSS versus VDS of a silicon and a GaN HEMT

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Equation 7

ENGINEER'S DESK

In the evaluation of the body diode losses it is important to compute the correct VSD value which will vary with current and temperature.

parameters (i.e., boot diode forward voltage, drain to source diode forward voltage, dead time, temperature) which have to be carefully evaluated.

4.2.1 Reverse recovery Another source of the losses which is difficult to quantify is the reverse recovery charge (QRR) associated with the body diode conduction during the dead time. Since GaN devices do not include an actual body diode structure in their structure, they have zero QRR. The reason why it is difficult to quantify these losses is mainly related to the fact that the QRR is highly dependent on the following operating conditions: forward current of the diode, di/dt, reverse voltage and temperature. The values provided in device datasheets are references for designers, measured under specific test conditions, and these may have little relevance in the real application. Nevertheless, with the relatively high switching frequency used in magnetic resonance power transfer it is clear that a lower QRR will produce lower losses. The only question is related to the relative importance of these losses since the operating current and therefore the operating QRR are not high in this application.

4.3.2 Gate current Differently from the silicon based products which drive the gate control through a gate oxide isolator, the gate connection for GaN devices takes the form of a Schottky barrier. The leakage current in the gate is consequently not in the range of nA but mA. This requires careful selection of the gate drive voltage and network components.

4.3 GaN devices: good practice In the previous paragraph it has been explained why GaN technology provides many opportunities to increase the overall efficiency of the system. However, this does not come for free. GaN technology has some attributes that need to be considered during system design.

4.3.1 Driving voltage accuracy As specified in the datasheet, the absolute maximum rating for the VGS of a MOSFET is typically +/- 20V. This provides the designer some freedom to keep the voltage regulator of the driving stage relatively simple and cheap.

For GaN this is not the case. The absolute maximum rating is limited to roughly 5 V- 6 V. This is mainly due to the diode nature of the gate structure. If during the operation the gate source voltage exceeds this limit in worst cases this could create severe damage to the device and at best reduction of the lifetime. For this reason the design of the voltage regulator used to create the driving voltage has to be done very carefully as the solution that works for silicon may not be suitable for GaN. The difficulties related to the capability of keeping the gate source voltage below the absolute maximum rating are not only related to the driving voltage regulator accuracy, but also to the operation during the dead time and the recharge of the bootstrap capacitor for driving the upper switch in the class D implementation. During the dead time operation the bootstrap capacitor is recharged through the body diode of the lower switch. In the case of the GaN devices the body diode with high forward voltage provides an extra charge to the boot capacitor which could exceed both with spikes and with steady state the absolute maximum rating of the device. This overcharge depends on many

Device area

As seen in the previous paragraph, GaN technology provides greater power density resulting from the low RDS(ON) x area figure. This is related to the high conductivity of the electron gas (2DEG). This is a very attractive feature to designers who want to increase the power density of their applications but it also creates some challenges. The fact that the area is smaller implies that there will be less contact area to extract the power dissipated inside the device. During the layout phase the design of the power connections between the device(s) and PCB will be more challenging, and the thermal resistance of the device could suffer. Since the most important thermal resistance is junction to ambient which is mainly dictated by the PCB characteristics, the smaller dimensions of the GaN device package should not create too much additional thermal resistance. In any case particular care should be taken during the design of the PCB to minimize this thermal resistance since the smaller area of the GaN might partially counteract the advantage of the technology.

For Infineon’s CoolGaN™ portfolio of switches and dedicated GaN EiceDRIVER™, please visit www.infineon.com/gan and www.infineon.com/gan-eicedriver.

About the Authors • P eter Green is a graduate of Queen Mary College, University of London and has an MSEE from the University of Wisconsin Madison.

He has over 30 years of experience in the electronics industry with 17 years combined at International Rectifier and Infineon as an applications engineer. He specializes in SMPS and lighting and is currently heading the renewable energy applications group covering UPS, solar and wireless charging at Infineon based in El Segundo, California.

• Milko Paolucci graduated in 2000 at Politecnico di Milano in system and signal engineering. He joined Infineon Technologies AG in 2006 where he has been working as application engineer for MOSFET technology definition in different application fields and voltage classes. Prior to joining Infineon, he was an application engineer for driver and controller in different fields at STMicroelectronics.

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BIG PICTURE

I’M EXCITED TO SEE GOOD PROGRESS IN THE ADOPTION OF INDUSTRIAL 4.0 IN INDIA During an exclusive interview with Niloy Banerjee; Sean Chang, Product Marketing Manager from Moxa India, noted, I am excited to see a good progress in the adoption of industrial 4.0 in India in the last few years.To a more prudent spectacle shared during this interview on Industry 4.0, Chang unfolded Moxa’s leadership and how the company is enabling the ‘FuturePresent’ in India. Edited Nub.

Sean Chang Product Marketing Manager | Moxa India

Q

Q

As per my engagement with the OEMs in India, most of them are well aware the industry 4.0 trend.

More and more manufacturers invest and set up the industrial 4.0 task force and start to engage with different eco system partners in industrial 4.0. They have a proposal and poc in their plant to analyze and evaluate the return of the investment.

It started with the automotive and its component manufacturers few years ago and now spreads to other vertical markets.

The benefit from industrial 4.0 is increase production quality, asset optimization, safety, and cost reduction.

And most of the challenges I see in India now is getting OT device connected to IT network.

How is India Preparing For Industry 4.0 and sectors likely to be impacted by the trend?

Q

What are the smarter strategies India should adopt for smart manufacturing?

There are steps towards smart manufacturing – Connecting the device and machine to get the data, Gathering data, Use data insights to do the analysis.

Improve the manufacturing procedure and increase the OEE, connecting the system, turn the data into actionable e.g. MES and SAP.

Q

How can Indian firms move towards Industry 4.0 – Strategies Firms should amend?

26

Q

Future of Industry 4.0, Smart Manufacturing and Automation in the Indian scenario?

The benefit from industrial 4.0 is increase production quality, asset optimization, safety, and cost reduction.

Most of the manufacturers talk about connecting the device and getting the data as first step but I suggest that goal identification can be your first steps. Assess your operational pain points, develop and prioritize the operational goals then it will increase your return on investment.

BISINFOTECH|JUNE 2019|VOL 1|ISSUE 06

What are the benefits of 4.0 and challenges that the industry will face?

I am excited to see a good progress in the adoption of industrial 4.0 in India in the last few years. Alot of companies are rapidly adopting new strategies to drive the smart manufacturing technology and I believe that we will soon see many smart factories across India.

Q

Lastly, how is your company dressing up for Industry 4.0

Moxa is a leading provider of industrial networking, computing and automation solutions that has grown based on its success providing connectivity solutions for multiple vertical markets especially in manufacturing.

Moxa has connected over 40 million devices, and has witnessed that the power of bringing data-driven decision making to the field or factory floor can provide to lowering the bottom line and raising profits by securely connecting previously isolated industrial serial networks to the industrial Internet. In short if you need to connect your device, equipment and machine in your plant, Moxa is the company that you can partner with.

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Build High EnergyDensity Power Supplies with Integrated eGaN Power Stages High energy density switch-mode power supplies (SMPSs) can accelerate battery charging, reduce the size of solar micro-inverters, and meet the demand of server farm power requirements, all without generating excessive heat.

However, engineers are now reaching the performance limits of the silicon MOSFETs and IGBTs that form the primary switching elements of conventional SMPSs. Instead, transistors constructed from enhancement-mode gallium nitride (eGaN)—a wide bandgap semiconductor—can now be used to overcome the switching speed and efficiency limitations of silicon devices.

Previously, the cost and availability of eGaN transistors precluded their use in anything but the most esoteric power supply applications, but wider commercialization has resolved those challenges. eGaN transistors are now an option for a much wider range of applications.

This article describes the advantages of high frequency power supplies based on eGaN switching components compared to those based on conventional silicon (Si) MOSFETs or IGBTs. It then presents guidelines on how to build SMPS designs suitable for applications such as battery charging or server farms using eGaN power stages from EPC, Texas Instruments, and Navitas Semiconductor.

Comparing silicon with GaN

GaN offers several advantages over silicon, including several related to the material’s higher electron mobility. Increased electron mobility bestows the semiconductor with a higher breakdown voltage (above 600 volts) and superior “current density” (amperes/centimeter2 (A/cm2)). Another advantage of GaN is that transistors constructed from the material don’t exhibit reverse recovery charge, a phenomenon that can lead to high switch current overshoot (ringing).

But while these characteristics are important to the power supply designer, perhaps more critical is that high electron mobility allows a GaN transistor to switch in about one quarter of the time of a silicon MOSFET. Additionally, each time the GaN device switches, losses are around 10 to 30 percent those of a silicon transistor for a given switching frequency and current. As a result, GaN high electron mobility transistors (HEMTs) can be driven at much higher frequencies than silicon MOSFETs, IGBTs, or silicon carbide (SiC) devices (Figure 1).

High frequency benefits

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Conventional SMPSs typically employ switching frequencies ranging from tens to hundreds of kilohertz (kHz). The duty cycle of the pulse width modulation (PWM) of the base frequency determines the power supply’s voltage output.

The key benefit of a higher switching frequency is a reduction in the size of peripheral components such as inductors, transformers, and resistors. This allows a designer to shrink designs for the same output power, increasing the energy density. In addition, current and voltage ripple at the SMPS output is reduced, lowering the risk of electromagnetic interference (EMI) as well as the cost and size of filter circuits.

However, conventional silicon power MOSFETs and IGBTs switch relatively slowly and dissipate significant power each time the devices switch on and off. Those losses multiply as the frequency increases, reducing efficiency and raising chip temperatures. The combination of slow switching and high switching losses puts a ceiling on the practical switching frequency of today’s SMPSs. Designers can break this ceiling by turning to wide bandgap semiconductors. Of these, GaN is currently the most proven and accessible technology for this application, with eGaN being a more refined version of GaN.

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Figure 1: GaN HEMTs enable higher frequency switch-mode power supplies than do silicon orSiC devices. (Image source: Infineon)

GaN HEMTs have been slow to catch on for two key reasons.

First, the devices are essentially depletion mode field-effect transistors (FETs), so the default mode is “on”. In contrast, silicon MOSFETs are enhancement mode devices with an “off” default mode. Consequently, GaN HEMTs require the addition of carefully tuned bias networks for proper operation. Second, the transistors are fabricated using a different process than the mature, high-volume techniques used for silicon, making them more expensive.This design complexity and higher cost

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has limited GaN HEMT applications to high-end SMPSs. But recently, eGaN HEMTs have been commercialized and are eliminating the need for bias networks. Moreover, chip vendors have introduced integrated power ICs drivers based on eGaN HEMTs that simplify design. Also, increased production levels have enabled lowercost eGaN devices.

Integrated GaN solutions

In high-end SMPS designs where eGaN HEMTs were previously used, the high price forced designers to limit the devices’ use to power transistors, and then revert to silicon MOSFETs for the gate drivers. While some performance gains were achieved compared to “all silicon” designs, the silicon elements in the combined design compromised maximum switching frequency. Also, because GaN and silicon use different process technology, the gate driver and power transistors had to be fabricated as separate components, increasing cost and pc board footprint.

Lower eGaN prices have allowed chip makers to address both problems. Texas Instruments, for example, offers its LMG3411R070 70milliohm (mΩ), 600volt eGaN power stage with integrated gate driver (Figure 2).

Navitas Semiconductor manufactures a similar class of product, the NV6113. The product integrates a 300mΩ, 650 volt eGaN HEMT, a gate driver, and associated logic in a 5 x 6millimeter (mm) QFN package. The NV6113 can withstand a slew rate of 200 volts/ns and operates at up to 2 megahertz (MHz).

While devices such as the TI and Navitas GaN power stages can be deployed in parallel for use in the popular half-bridge topology (Figure 4), other products are available that integrate two power transistors (and associated gate drivers) on the same chip.

Figure 4: The Navitas NV6113 can be deployed in parallel for half-bridge topologies as shown here. (Image source: Navitas Semiconductor)

EPC, for example, recently introduced its EPC2115, an integrated driver IC that comprises two monolithic 88mΩ, 150 volt eGaN power transistors, each with an optimized gate driver (Figure 5). The EPC2115 comes in a low inductance, 2.9 x 1.1 mm BGA package and can run at up to 7 MHz.

Figure 2: The LMG3411R070 from Texas Instruments integrates a 70 mΩ, 600 volt eGaN power stage with its driver. (Image source: Texas Instruments)

The chip can switch100volts/nanosecond (ns) with near zero ringing (Figure 3). This compares with typical slew rates of 3 to 10volts/ns for conventional silicon power MOSFETs. Figure 5: EPC’s eGaN integrated driver IC includes two power transistors, each with its own optimized gate driver. (Image source: EPC)

Designing a power supply using eGaN HEMTs generally follows the same principles as a design using silicon MOSFETs, but the higher operating frequency impacts peripheral component selection.

Peripheral component selection Figure 3: As demonstrated by TI’s LMG3411R070 integrated eGaN power stage, eGaN power transistors can manage much higher slew rates than MOSFETs with minimal ringing. (Image source: Texas Instruments)

To illustrate the impact of frequency on component selection, consider the input capacitor for a simple DC-to-DC SMPS step-down (“buck”) topology.

Input capacitors reduce input ripple voltage amplitude, and in turn dampen ripple current to a level that can be handled by

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relatively inexpensive bulk capacitors without excessive power dissipation. Reducing peak-to-peak voltage ripple amplitude to below 75 millivolts (mV) is a good rule of thumb for keeping the currents in the bulk capacitors within acceptable limits.

The input capacitor is typically a ceramic device because they have the extremely low equivalent series resistance (ESR) needed to effectively reduce voltage ripple.

To determine the value of the ceramic input capacitor needed to reduce peak-to-peak voltage ripple amplitude to a given magnitude, Equation 1 can be used:

Equation 1

Where: CMIN is the minimum required ceramic input capacitance in microfarads (μF) fSW is the switching frequency in kHz VP(max) is the maximum allowed peak-to-peak ripple voltage IOUT is the steady state output load current dc is the duty cycle (as defined above) (From Reference 1)

Controlling slew rate Rapid slew rate (dV/dt) can introduce problems such as: • Increased switching loss • Radiated and conducted EMI • Interference elsewhere in the circuit coupled from the switch node • Voltage overshoot and ringing on the switch node due to power loop inductance and other parasitics These problems are most evident during start-up or hard switching conditions.

When using the Navitas product, a simple solution is to control the slew rate at turn-on by adding a resistor between the CVDD capacitor and the VDD pin (see Figure 4, again). This resistor (RDD) sets the turn-on current of the integrated gate driver and determines the turn-on (falling) edge slew rate of the drain of the power FET(Figure 6).

Performing the calculation with some typical operational values for a high-end silicon-based power stage yields: VIN= 12 volts VOUT= 3.3 volts IOUT = 10 A η = 93 percent fSW = 300 kHz dc = 0.296 VP(max) = 75 mV Calculated CMIN = 92 µF Repeating the calculation for an eGaN power stage, such as the Navitas device operating at 2 MHz, with slightly improved efficiency and otherwise similar operating conditions, yields: VIN= 12 volts VOUT= 3.3 volts IOUT = 10 A η = 95 percent fSW = 2000 kHz dc = 0.289 VP(max) = 75 mV Calculated CMIN = 13 µF The reduction in CMIN allows for the use of a smaller component.

While rapid switching of eGaN HEMTs is generally advantageous, it also introduces some unique design challenges. Chief among these are issues associated with the very steep slew rate.

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Figure 6: The RDD resistor sets the NV6113 turn-on current and determines the turn-on (falling) edge slew rate of the drain of the power FET. (Image source: Navitas Semiconductor)

The LMG3411 also supports slew rate adjustment by connecting a resistor (RDRV) to the power transistor source (see Figure 2, again). The choice of resistor sets the slew rate of the drain voltage to between approximately 25 and 100 volts/ns.

The choice of slew rate is ultimately a trade-off. Faster rates decrease power loss as the duration when the switch simultaneously (and inefficiently) conducts high current is decreased, but other performance characteristics decline.

A rule of thumb is to aim for the fastest rate that keeps EMI, overshoot, and ringing just within the specification.

A second design challenge is the risk of overcurrent events associated with high frequency operation.

The importance of overcurrent protection

The key advantage of designing an SMPS with higher switching frequencies is to reduce the size of passive components and

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in turn increase the overall power density. One downside is that this increased power density multiplies the potential for damage in the event of an overcurrent event. Overcurrent events are an ever-present risk for SMPSs. Among other problems, overcurrent spikes can cause false triggering due to external parasitic inductance from the source pc board trace.

While rapid overcurrent protection (OCP) is important for SMPSs using traditional MOSFETs, it’s even more vital for eGaN HEMTs because: • For the same blocking voltage and on-state resistance, the eGaN HEMT area is much smaller, making it much harder to dissipate the heat build-up during an overcurrent event • Overcurrent must be detected while the eGaN HEMT is operating in the linear region, otherwise the device rapidly enters saturation causing excessive power dissipation and damage A conventional approach to OCP is to use a current sense transformer, shunt resistors, or de-saturation detection circuits (Table). Unfortunately, these can adversely affect

system performance by increasing parasitic inductances and resistances in the power loop, which in turn necessitate a reduction in slew rate and a resultant increase in power dissipation. Moreover, discrete devices such as sense transformers or shunt resistors add cost and take up board real estate.

An alternative approach to OCP is to sense the drain-source voltage (VDS) of the GaN FET using a current sensing element, a level shifter to report the signal to the controller, and a detection circuit. This method has the advantage of not generating the parasitic inductances and resistances that impinge on circuit performance, but it does lack accuracy primarily due to the large temperature coefficient of GaN. A third option is to select an integrated eGaN power stage that includes an integrated OCP function. This eliminates the disadvantages of the two approaches described above.

TI’s LMG3411 is an example of a product that includes this feature. The LMG3411’s protection circuit can turn off the eGaN HEMTS in less than100 ns should an overcurrent be detected. When the PWM input returns to low on the next cycle, the output fault signal clears. This allows the eGaN HEMT to turn on normally on the next cycle, minimizing disruption at the output.

Table: Summary of OCP options for GaN HEMT power stages. Selecting a power stage with integrated OCP is the simplest solution for a designer new to the technology. (Image source: Texas Instruments)

Conclusion

The increasing demand for high energy density SMPSs for applications such as solar inverters and server farms, combined with decreasing cost per device, has made eGaN HEMTs an attractive option for a greater range of power supply designs. While designing with eGaN HEMTs can betricky, the introduction of eGaN HEMT power stages that integrate the gate driver(s) with the power transistor(s)has made it much easier for SMPS designers to incorporate the technology into their next high power density design.

References:

1. “Input and Output Capacitor Selection,” Jason Arrigo, Texas Instruments, application report SLTA055, February 2006.

Rich Miron

Digi-Key North America Editor

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FUT

iot

Organised By:

FcDC

BISinfotech

U RE CIT Y D e s ign C ont e s t Give Your Design ideas The Biggest Platform. Make Industry Aware of Popular designs and get awarded. The biggest chance is here!

This unique contest is open to all students, engineers and anyone who is between 18 to 30 years of age.

Bringing unparalleled opportunities and countless concepts, this year the Future City Tech D-Zine Contest focuses on developing;

â&#x20AC;&#x2DC;Smart Things for Smart Cities.â&#x20AC;&#x2122; Projects Include: 1. Enabling Sustainability And Developing Smart Homes 2. Mobility is Critical 3. Enhancing Quality of Everyday Life 4. Designing for Urban Farming 5. Smart Waste Management of Future 6. Energy Efficient Building Control 7. IoT Designs for Future Cities

What You Take Back: No Step-Way To Bag Prizes for your design. Just Enter, Share Design and Win Big Prizes and a Chance to Sit With Industry Veterans and Discuss Your And Future of Electronics Together.

When and How: The contest will run from 15th May 2019 to 10th August 2019 . The winning entry will be selected by BIS Infotech handpicked Industry Expert Team.

More Details: www.iot-contest. bisinfotech.com

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The State of the Industrial Internet of Things:

A Spotlight on Industrial Innovation Joe Biron, CTO, Internet of Things Don Busiek, SVP, Corporate Strategy Jon Lang, Lead Principal Business Analyst, Corporate Marketing

The State of the Industrial Internet of Things is an ongoing series of market research and analysis conducted

by PTC. These reports explore the robust and increasingly complex opportunities presented by the Industrial Internet of Things (IIoT) market. Tapping into PTCâ&#x20AC;&#x2122;s 30 years of technology expertise, 30,000 global customers, and 1,000 technology and service partners, the State of the Industrial Internet of Things series delivers actionable trends and insights across the entire IIoT ecosystem.

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Executive Summary

Based on findings from recent quarters, there are a noteworthy number of enterprises pursuing initiatives to build and offer IoT solutions for their end customers. While a majority of these companies are also using IoT for internal benefit, this report will focus on the responses of those whose primary use is for strategic differentiation, or leveraging IoT and other advanced technologies to offer innovative, new connected products, services, and solutions.

This mid-year spotlight edition of our State of Industrial Internet of Things series examines this observation in greater detail. It focuses on development and adoption trends for innovative companies building industrial IoT experiences to serve their end customers externally by enhancing their customerfacing products, services, and solutions through the use of IIoT technology, versus for their own internal use and benefit within their internal value chain. Our key findings include: • There is a significant market opportunity for companies looking to build IIoT capabilities into their physical products or to provide IIoT solutions to their end customers through new offerings, product interfaces, and service models.

• Larger companies are primarily focused on internal use of IIoT technology as they recognize significant opportunity for efficiency and to optimize processes across complex value chains.

• Use cases being developed to offer to end customers typically focus on service as the primary beneficiary of a company’s IIoT offering.

• Cloud-hosting is the preferred method of bringing IIoT solutions for customers to market, however there is still strong market demand for on-premise options.

every vertical market and given rise to new partners, service providers, and opportunities to create both internal operational efficiency and strategic differentiation in product or service offerings. Throughout the life of the survey, the data shows the majority of companies are adopting IIoT initiatives for their own internal use (54%). However, between the dates of October to December 2017, the data contains a noteworthy number of companies focused on external offerings that enhance new and existing products or service offerings. Jumping nearly 10% to 30% in this period, these companies pursuing IIoT for use by their end customers are primarily focused on strategic differentiation and generating revenue from the opportunity.

Methodology

The insights contained in this iteration of the State of Industrial Internet of Things report series have been developed through primary and secondary market research conducted by PTC. The primary research includes exclusive data related to one of the largest sets of IIoT customers in the market: PTC ThingWorx customers. PTC has been engaging with its customers since 2015 to reveal their current and planned use of IIoT to drive digital transformation across their operations and products.

The sample for this data set includes enterprises across multiple verticals and geographies with a focus on industrial settings. PTC supplements this proprietary data with market projections and case studies from dozens of analyst firms and consultancies in thebroader market. The State of the Industrial Internet of Things distills this body of knowledge and provides a comprehensive view of the current state of the market. In this mid-year update, we offer an interesting data point from our recent research and provide a view into a particular subset of enterprises capitalizing on the opportunity presented by the IoT.

Demographics

Starting out as traditionally M2M initiatives that pre-date the Industrial Internet of Things market, enterprises operating in industrial settings have long recognized the potential value of the IIoT for their internal use and benefit. As industrial IoT technology has become mainstream, it has penetrated virtually

Industry

When we look at only companies pursuing IIoT primarily for external use the heaviest concentration of companies pursuing IIoT for their end customers (external use) remains proportionate to the overall sample inclusive of those pursuing projects for internal use. However, the software industry jumps 10 percentage points to 19%, when we look at only companies pursuing IIoT

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primarily for external use. This suggests that software companies developing offerings for end customers are focused on partnering to develop highly visible, polished, customer-facing solutions.

This is likely due to a heightened focus on user experience (UX) for these types of applications, with software service providers being more flexible in their development to enable greater customization. The fast time to market that third party development offers is also helpful for externalfacing solutions, which have a more limited window to provide differentiation.

There is also a significant difference in the industrial products category when we split by internal versus external, suggesting a heightened interest in differentiating industrial product offerings with the integration of IIoT technology and solutions.

Company Size

There is a significant shift in adopters when we split by revenue.

Companies pursuing IIoT primarily for external use tend to be much smaller in size, with the concentration of companies in the $5 billion or greater category dropping from 29% to only 13%. This trend highlights the adoption of IIoT for internal use by large companies, rather than an acute focus on connecting products and services for the end customer by smaller companies.

IIoT initiatives thrive where there are high concentrations of high-value assets and greater levels of automation. Large enterprises typically have large service networks and are keen to leverage IIoT technology for gains in efficiency and productivity. For larger, more complex industrial environments with global operations and wider service networks, maturity tends to be higher for industrial IoT and automation initiatives internally; larger companies are hyper-focused on reaping the operational benefits of using IIoT to generate actionable, datadriven insights and visibility. In contrast, smaller companies are

driven primarily by the need to increase market share, and are therefore hyper-focused on product and service differentiation required to convert and retain new customers. It is important to large organizations to predict the disruption brought on by new innovators and startups entering their markets, and they should not neglect their product and service offerings as part of their broader IIoT strategies.

Top Use Cases and Examples of IIoT for End Customers

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Industrial enterprises focused on harnessing IIoT capabilities are deploying this technology across their value chains. While the data suggests internal use in manufacturing operations, taking a step back to look at those developing for end-customer use shows a focus on service as the key functional beneficiary.

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As industries shift toward service-oriented business models, industrial enterprises are eager to leverage the same capabilities to monitor and optimize connected devices with their customers the same way they do internally. Companies recognize that reducing downtime (via predictive maintenance, remote service, etc.) continues to be a top priority for their customers.

As a result, they are capitalizing on the opportunity to extend their footprint within the customerâ&#x20AC;&#x2122;s operations and monetize this highly strategic outcome.

To better serve end users, extend their product and service footprint, and develop more strategic partnerships with customers, industrial enterprises are working to enable a series of use cases across their customersâ&#x20AC;&#x2122; environments. This distribution of use cases is consistent with that of companies pursuing IIoT for internal use. The path to value for new IIoT innovation typically begins with the monitoring capability of connected devices.

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Looking for early value, enterprises pursue remote monitoring while innovating in parallel, utilizing this new capability as the foundation upon which to develop or identify new and unique use cases.

The heaviest concentration of solutions developed for end customers focuses on providing transparency into machine performance through remote monitoring. This core capability enabled by IIoT technology is unlocking new business models and revenue opportunities such as automatic consumable replenishment or product-as-a-service models. Burdened by less bureaucracy, startups and new entrants are increasingly choosing this type of business model. Large enterprises would be well served to start their business model transformation

todayâ&#x20AC;&#x201D;preempting the agility and speed with which start-ups may be able to disrupt their market. By providing a window into throughput and asset utilization with data streams and dashboards related to asset performance, companies selling IIoT capabilities to customers improve the strategic value of their relationship by more closely tying the customersâ&#x20AC;&#x2122; success to the individual equipment and solutions they provideâ&#x20AC;&#x201D;a key attribute of why product-as-a-service models are sought after by many customers. These stronger relationships, in turn, can insulate customer relationships from competition.

Just behind these monitoring-related use cases are IIoT solutions for maintenance and service. These solutions layer machine learning and predictive analytics on top of this monitoring stream to predict failures before they happen and help customers optimize their use of a product. These serviceoriented applications also enable discrete manufacturers to identify service opportunities and proactively pursue customers either directly or via their service network. In this way, they are capturing new service revenue that may have otherwise been directed to a third party, conducted in-house by the customer, or resulted in emergency customer calls and escalations. All of these provide a suboptimal experience for the customer and can damage relationships over time. Industrial enterprises and solution providers developing applications to enhance their product or service offerings today tend to favor public-cloud hosted (including PTC-hosted) applications at nearly a 2:1 ratio compared to on-premise installations, such as their corporateowned servers. These companies prefer cloud-hosted applications, which simplify integration with customer and third-party systems and enable maximum scalability and stability. These benefits are helpful for certain products or offerings, particularly in the consumer space. However, as industrial customers run more of the IIoT technology stack (such as analytics at the edge or within the factory walls), PTC predicts that the customer demand for on-premise offerings in industrial verticals will hold

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steady or increase. This is also driven by the need for extremely low latency and high control over application security for these mission-critical applications. Companies offering IIoT-enabled products and solutions will need to ensure their offering is available for on-premise installation to fit the needs of this particular customer base. This increased need for on-premise deployment options is counter to the trend in adjacent technology markets, which sees a more linear path to hosting all software in the cloud.

The Bigger Picture

There is no longer doubt: The Industrial Internet of Things is here to stay—and IIoT technologies can mean the difference between success and failure for industrial enterprises. Taking the breadth of IIoT impact holistically, technology market analysts’ and PTC’s forecasts predict that the IIoT has the potential to create significant economic disruption and impact.

Global consultancy McKinsey predicts the impact of “linking the physical and digital worlds,” stating that “… by 2025 IoT will have a potential total economic impact of as much as $11.1 trillion per year. In fact, IoT will be the biggest source of value of all disruptive technologies, ahead of mobile Internet, knowledge-work automation, cloud computing, and advanced robotics.” While the majority of this economic impact will come from companies developing and deploying IIoT technologies for their internal use, this simply is not possible without vendors and partners who offer industrial IoT-ready connected devices and solutions.

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MAXIM DEEPCOVER AUTHENTICATORS FOR MEDICAL Mouser Electronics announces the release of the DS28E39 and DS28E84 DeepCover authenticators from Maxim Integrated. The secure authenticators enable engineers to add an extra layer of protection to applications such as Internet of Things (IoT) nodes, device management, secure peripherals, and medical sensors.

The Maxim DS28E39 and DS28E84 DeepCover authenticators, exclusive at Mouser, helps design engineers safeguard medical devices against invasive attacks.

The key features include: • core set of cryptographic tools derived from integrated blocks, - asymmetric ECC-P256 hardware engine (plus a symmetric SHA-256 compute engine in the DS28E84) - a FIPS-compliant (FIPS/NIST-compliant for the DS28E39) true random number generator - a decrement-only counter.

• onboard nonvolatile memory (2 Kbits of secured EEPROM on the DS28E39,

and 15 Kbits of FRAM on the DS28E84) • a unique 64-bit ROM identification number, which is used as a fundamental input parameter for cryptographic operations and serves as an electronic serial number within the application.

Designed to protect devices against security attacks, the DS28E39 is an Elliptic Curve Digital Signature Algorithm (ECDSA) public key-based secure authenticator

that incorporates Maxim’s patented ChipDNA physically unclonable function (PUF) technology. Attempts to probe or observe ChipDNA operation modifies the underlying circuit characteristics, preventing discovery of the unique value used by the chip cryptographic functions.

The DS28E84 is a radiation-resistant secure authenticator designed for medical devices. High radiation exposure used in sterilization processes can disrupt and damage the standard nonvolatile memory (NVM) in electronic medical. The DS28E84 IC’s high radiation resistance up to 50 kilograys allows user-programmable manufacturing or calibration data before medical sterilization, protecting against unauthorized reuse and enhancing patient safety.

Both the DS28E39 and DS28E84 communicate over the single-contact 1-Wire bus at both standard and overdrive speeds, allowing for simple integration into designs.

ARROW, INFINEON AND OMRON USB & PCB ENVIRONARKESSA TO WORK TOGETHER MENT SENSORS AT HEILIND Arrow Electronics has announced a global agreement with Infineon and Arkessa to further extend Arrow’s ability to support customers with cellular communications for the Internet of Things (IoT).

Currently, security remains one of the top concerns for organizations for connected devices. Keeping that as a priority, Infineon provides the secured hardware controllers based on GSMA’s Embedded Subscriber Identity Module (eSIM) specification that underpin the new service while, Arkessa provides secured mobile data services with the ability to provision and manage IoT devices from the factory into the field easily and effectively.

With the new collaboration with Arrow, OEMs, system integrators and enterprises can obtain all the technology and service elements required to provide consistent connectivity for their IoT devices anywhere in the world, underpinned by security features from Infineon and flexible network access and provisioning by Arkessa. eSIMs provide for greater security and reliability in multiple IoT applications and can be flexibly coupled with cellular, NB-IoT, and LTE-M services from Arkessa.

Andrew Orrock, CEO Arkessa, said, “The strength of this collaboration lies in bringing together market-leading technology partners to offer Arrow customers a world-class and future-proof connectivity solution.

The new Omron sensors, featuring Bluetooth integration and embedded memory for storage, allow designers to monitor eight parameters.

Heilind Electronics has expanded its sensor offering for the IoT device market with new USB and PCB type environment sensors from Omron. These comprehensive sensors integrate various sensing capabilities into a single IoT unit.

Featuring wireless communication functionality in an ultrasmall footprint, Omron’s environment sensor is a multifunction component capable of tracking eight different environmental factors: temperature, humidity, light, UV index, barometric pressure, noise, acceleration and VOC (volatile organic compounds).

The new device offers multiple sensors in one unit as well as has built-in memory and connectivity through beacon communication as seen in its previous counterpart, the Omron 2JCIE sensor. Sensor data from the modules can conveniently be passed to the cloud through a smartphone or gateway.

Alternatively, it can be stored in onboard memory.

It is convenient in application due to its compact size. The sensor can be accessed at all times and features its own embedded memory for data logging. The sensor can accumulate data for approximately three months (based on a communication frequency of once every five minutes) and connect to smartphones and other devices via Bluetooth.

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Designing Power supply for SiC and GaN Devices

ZHONGLIN LI

MORNSUN FAE MANAGER

Market prospects for power devices

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In recent years, the growth rate of high power converter/ inverter market demand is more than 5% per year. In 2020, the global market capacity is expected to reach $50 billion.

As the most mainstream power device applicable in the system, IGBT is accounting 80% of it, which is 4 billion US dollars. IGBTs are widely used in various industries including industrial control, telecommunications, rail transit, renewable energy, automotive electronics, smart grids, etc. With the revolution and rapid development in the automotive electronics and PV inverter industries, the emerging power devices such as SiC MOSFET and GaN transistor are expected to reach $1 billion by 2020.

After that, the compound growth rate of the new power devices will exceed 30% with the advantages of higher operating frequency, better temperature performance, higher power density and reasonable cost.

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While the power devices are in the process of literation, the control mode of them is always the same, which is having a drive circuit to manage them. Many engineers know it but they havenâ&#x20AC;&#x2122;t realized the importance of the DC-DC power supply for the drive circuit. And we will introduce the key features of it in the following paragraph.

1. Isolation capacitor/ Transient load response As we know, high working frequency is one of the development directions of power converters. Therefore, the isolation capacitor between the primary and secondary of the DC-DC power supply should be as small as possible to accommodate the high frequency application, which making the transformer of the DC-DC is more difficult to be designed. At present, the proper isolation capacitor of DC-DC power supply for drive circuit is between 3-10pF. In terms of power, a 100A IGBT requests about 3.5W from

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identical. At present, +15/-6~-10 IGBT, +20/-4 SiC, +6/-3 GaN are the recommended DC-DC output for different device features. The asymmetrical output voltages ensure optimum drive performance and EMI. The negative output is common for rapidly turning-off the power device and maintain the off state without mistakes.

the DC-DC. The power can be calculated by the following formulas:

Ig: The average value of IGBT gate current; VCC: High voltage of the drive circuit (Positive output of the DC-DC); VEE: Low voltage of the drive circuit (Negative output of the DC-DC); Qg: Gate charge, which can be obtained from the technical manual of the IGBT. In the operation, the peak power of the DC-DC could reach 10W. In order to prevent the transient spike current from damaging the DC-DC, the dynamic load performance needs to be concerned in the component selection and circuit design stages accordingly. And, the capacitor at the output of the DC-DC should be chosen with low ESR to ensure enough drive current for the power devices.

2. Proper offset output voltage To enhance the current control ability, it tends to set a higher voltage for the power device. Taking IGBT as an example, the gate withstand voltage is generally 20V which is limited by the production process. Therefore, most engineers design the DCDC power supply with about 15V output for reliability purpose.

However, sometimes the power devices cannot be precisely controlled due to the existence of voltage losses on the layout.

To solve that problem, it is recommended to have a adjustable output voltage of the DC-DC power supply or simply make it higher.

The turn-on and turn-off voltages of the power devices are not

3. High isolation To avoid common mode interference and eliminate safety risks, the DC-DC power supply of the respective power devices must be isolated from each other. And it is more recommend to use separated DC-DC power supply for each power device in the system but not different output windings in the single one DC-DC. From the application scenarios side, we have low-voltage (6001200V) commercial applications such as medical equipment, telecommunication, solid-state lighting, etc. For medium voltage (1200-1700V) industrial applications we have UPS, photovoltaic inverter, motor drive, etc. And wind power generation, high voltage / UHV power transmission & transformation which are in high voltage (2500 -6500V) power applications.

Typical isolation voltage of the DC-DC is at least the twice of the long-term operating voltage in the system. Therefore, compared to conventional DC-DC power supply, reinforced insulation and high isolation voltage are the distinguishing features of the DCDC in the power device drive circuit.

4. Compact size SiC and GaN devices have received wide attention because of their band-gap width, high breakdown voltage and high thermal conductivity. The direct advantage of these features is that the power converter system can be reduced by at least 40%.

As a companion device, its volume has became an important parameter as well. Currently, push-pull circuits and single-ended flyback topologies have become mainstream solutions.

5. EMC Because of the radiated emission in different systems, the stability of the design is in risk. For DC-DC power supplies, EMC optimization is mainly to improve the emission performance. The interference sources of switching power supply are the switching circuit and the rectifier circuit. Therefore, it is very important to optimize the layout such as increasing the wiring width of the large current loop, avoiding cross wiring, and separating the ground of the DC-DC power supply from the signal ground. Finally, if the shield can be added between the primary and secondary transformers and the shield is grounded, the interference signal from the primary will be greatly reduced.

This article introduced the key features of DC-DC power supplies used in high capacity power converters/inverters. As a professional power supply manufacturer, MORNSUN has a store of experience and unique patent in this area to meet the special requirements.

Besides, MORNSUN own 14 highly automatic production lines which ensure the top delivery capacity in the market. For more information of power supply, please look forward to further monograph. n

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Understanding the Power of Battery Management Systems Sambit Sengupta

Associate Director – Field Applications, Avnet India

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According to the Society of Manufacturers of Electric Vehicles (SMEV), electric vehicle (EV) sales in India was 56,000 units in fiscal year 2018 – which is a 124% growth year on year. Even though the sales in fiscal year 2017 was a mere 25,000 units, the Indian market shows a peculiar trend of its own. EV sales is growing in 2-Wheeler (2W) and 3-Wheeler (3W). For last mile connectivity (such as short commutes from the metro station to your home or office, or a short commute to the nearby mall),EVs, particularly 2W and 3Woffer a great solution. With government backing forFaster Adoption and Manufacturing of Hybrid and Electric Vehicles (FAME) and high subsidy for EVs,the future outlook for EV sales is very positive.There will be tremendous growth for EVs in 2W and 3W as there are lots of infrastructural incentives for the same.It is predicted that by 2030, every third vehicle will be electrically powered.

Equally astonishing is the growth spurt seen in shared and connected mobility. It is common sight to see people using a shared car, rented car or bike for their urgent commute requirements. This market is ready for induction of EVs, mostly 2W and 3W first, and eventually 4 wheelers so it is the ripe time to discuss the EV safety incidents (as we see from time to time in international news reports). An analysis of some 50 cases of EV incidents that have occurred globally since 2010 shows

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that as much as 50% were due to battery malfunction. This is unsurprising given that battery packs, the “heart” of EVs, are made up of thousands of monolithic lithium batteries.

Among all commercially viable battery technologies, lithium batteries currently exhibit the highest energy density though they are naturally volatile and could potentially explode in the event of overcharge, overtemperature, overdischargeand other operating issues, or if there are issues in manufacturing techniques and structural materials. This is where BMS (battery management system)—a solution that enables lithium batteries to power EVs while controlling their volatile nature—steps in.

BMS is a new technology that progressed alongside advancements in EV development. As safety requirements for automobiles are particularly stringent, people have naturally developed high expectations for the functionality of BMSs. For example, the ideal BMS must be capable of preventing overcharge/overdischarge, regulating temperature, maintaining battery voltage and temperature equilibrium, predicting remaining battery capacity and remaining mileage etc. They must also be capable of real-time monitoring and adjusting battery management parameters while working in conjunction with other parallel subsystems. In short, BMSs are monitoring systems that must be able to monitor, analyze, control and

EV FEATURE

provide feedback on power batteries to ensure efficiency and operational safety.

A Typical BMS system will be like below:

From the perspective of BMS technological frameworks, core functions include: • Accurate prediction of battery status. This pertains to accurate measurement and prediction of parameters for battery SOC (State of Charge), SOP (State of Power) and SOH (State of Health), conducting dynamic monitoring and providing diagnosis for each battery, and building historical files on battery use, thereby providing a basis for data analysis and control decisions.

• Energy balance. Performance discrepancies between different batteries within a battery pack can negatively affect lifespan and system usage. These discrepancies must be mitigated through energy balancing measures to ensure conformity among different batteries and perform dynamic "maintenance" on the battery pack. BMS currently utilize active balance and passive balance strategies each of which offer unique advantages (see Table 1).

• Protection. BMSs are able to protect the battery pack and respond rapidly in the event of malfunction due to overcharge, overdischarge, overcurrent, or over/undertemperature.

• Data communication. Data communication mechanisms can be established using CAN BUS or other methods to transmit data to the display system, vehicle control system, charging system and other external equipment. Some BMSs are even equipped with Wi-Fi transmission capability for

cloud connection.

To support the above BMS functions, technology providers have been actively developing new products and solutions.

For example, the Maxim Integrated MAX14920/MAX14921 battery measurement analog front-end devices can support high precision sampling of voltage and provide level shifting for primary/secondary battery packs up to 16 cells/+65V (max) and support passive balancing through an external FET driver.

While Maxim Integrated offers high performance "products", Texas Instruments (TI) provides full "solutions". TI's bq76PL455A-Q1 is an integrated 16-cell battery monitoring and protection device based on which a comprehensive passive balance battery solution can be built. It can be used to monitor and detect various malfunctions such as overvoltage, undervoltage, overtemperature and communication faults, and allows up to sixteen bq76PL455A-Q1 devices to communicate with a host via a single high-speed Universal Asynchronous Receiver/ Transmitter (UART) interface.

NXP, on the other hand, leverages its comprehensive automobile electronic product lines to provide a comprehensive BMS solution that encompasses micro controllers MCUs, analog front-end battery controller ICs, isolated network high speed transceivers, system base chips (SBC) and others functions.

Customers that utilize the solution can manage high voltages of 800V and above.

Apart from the above, Avnet and various manufacturersprovide support inproviding various options for BMS ASIC device, DC relay and contactor, microcontroller (MCU) with controller area network (CAN), CAN physical, metal–oxide–semiconductor field-effect transistor (MOSFET)and connector.

Aside from the above mentioned hardware capabilities, BMS system designs require corresponding software capabilities, i.e. the development of a core algorithm. A high quality algorithm enhances battery status prediction accuracy and offers strong correction capabilities, thereby mitigating the impact of hardware issues such as battery quality. This allows precise control even for batteries with a lesser degree of uniformity, hence reducing overall system cost. The advantages and pitfalls of an algorithm is also reflected in the hardware resources required. High performance algorithms require only a low amount of CPU computing resources, greatly enhancing system efficiency. Avnet and their different vendors provide support and guidance in this area.

According to estimates, India's EV battery market will reach 120 croreRrupees by 2020. Although the cost of BMS relative to the entire EV is relatively low, developers should nevertheless ensure it is tightly integrated into EV design to ensure that power batteries don’t become ticking bombs.

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AI AND ML IS DISRUPTING THE ANALYTICAL INTELLIGENCE INDUSTRY

The fintech scene in India is incredible and the start-up scene is much more buoyant than the UK. The innovation coming out of India is unbelievable, avers Joel Perlman l Co-founder & Senior Managing Director l OakNorth AI, on an exclusive chat with Jyoti Gazmer, as he unravels the mantra of OakNorth AI’s recent achievements and notes few predictions for India’s Fintech scenario.

Joel Perlman Co-founder & Senior Managing Director l OakNorth AI

Q

To start off, would you like to tell us a bit about OakNorth Holdings?

The group was founded by myself and my business partner, Rishi Khosla. We were inspired to launch the business following the challenges we faced in securing debt finance from high street banks for our previous business, Copal Amba (which we scaled to c.3,000 employees and sold to Moody’s Corporation in 2014).

The business’ mission is to provide small and medium-sized growth companies with the debt finance they need to compete against large corporates. Historically, there’s been a massive focus on tech efficiency within the retail and small SME space, and a massive focus on people within the corporate and large business space. As a result, the segment of the market that we focus on (the mid-market growth companies) has been overlooked and underserved for decades.

Whether you’re an owner-managed business looking for a £500k loan, or a small cap listed business looking for a £20m loan, the issue is the same and your requirement for a bespoke, structured lending solution is the same.

Our big data and machine learning platform, OakNorth Analytical Intelligence (ON AI), is how we’re solving this problem globally – within the UK, we do this via balance sheet lending (OakNorth Bank plc) where we lend between £0.5m-£40m, and throughout the rest of the world, we do it with by licensing the ON AI technology to other banks and lenders so that they can replicate our success with SME lending in the UK, in their own markets. We are now working with partners across eight geographies who have combined balance sheets in excess of $800bn. Today, OakNorth is Europe’s fastest-growing fintech by assets, valuation, profits and revenue.

Q

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India is advancing its Fintech Industry and likely to grow 1.7 times by 2020, according to some reports. What are your plans for expansion in India?

With over 250 people across offices in Gurugram and Bengaluru, India is our biggest market in terms of headcount and is critical to our operations and the ongoing success of the business.

The team is made up of some of the best credit analysts, along with engineers and data scientists who integrate into a global product team, all focussed on developing the ON AI platform. We will continue scaling the team with several hundred more hires to come this year.

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Q

Kindly tell us more about OakNorth’s recent achievements?

Since its inception, the OakNorth group has secured over $1bn from leading investors, including: Coltrane, EDBI of Singapore, GIC, Indiabulls, NIBC, Toscafund, and in February this year, we secured a $440m investment from SoftBank’s Vision Fund and Clermont Group. This financing is currently being used to grow our lending operations in the US, providing North American lenders with the capability to greatly expand business lending opportunities and accelerate their business lending, while creating efficiencies and improving credit quality.

In March this year we announced our 2018 annual results, revealing a 220% increase in our profit-before-tax – up from £10.6m in 2017 to £33.9m in 2018, as well as total loan facility growth of 160% from £850m in 2017 to £2.2bn in 2018. Going forward, we’ll also be donating 1% of group net profits to supporting charitable causes and social entrepreneurship.

Q

OakNorth AI was previously known as ACORN Machine, any reasons behind the change? How does OakNorth AI help assist lenders?

Since our founding, our mission has been to enable small and medium-sized businesses obtain the debt finance they need to grow. Our fintech platform, which we developed to address this problem, is being used by a number of leading banks globally, and by us in the UK. To create a single brand to support this mission, we have changed ACORN machine’s name to OakNorth Analytical Intelligence (ON AI).

In terms of how OakNorth AI assists lenders, it essentially combines our credit analysis and underwriting expertise with machine learning to enable credit papers, the 30-40-page documents that banks’ credit committees use to make informed lending decisions, to be pulled together in days rather than the weeks it would normally take. The platform then proactively monitors the financial and operational data of every borrower in a bank’s portfolio, flagging up any potential issues to assist in reducing the likelihood of a late payment or default in the future. This means that transactions can be completed in much shorter time frames, with incredibly robust, private-equity level underwriting, and ensure that banks have a clear view of their SME lending portfolio at all times.

BIG PICTURE

Q

Few trends that you want to predict for the Indian Fintech industry?

The fintech scene in India is incredible and the start-up scene is much more buoyant than the UK. The innovation coming out of India is unbelievable. Back in the UK, there is almost no capital to start a business and get it off the ground. So, getting angel and seed kind of funding is hard. Once you reach Series A level, then you have got funding kicking in from Series B onward.

India is a different story. You get angel, seed, Series A, B readily. It’s a much deeper capital market. Secondly, India is a high-growth market, and such markets attract investors.

So, we see large number of unicorns coming out of India and China. The markets in these countries are big, and they are growing. This explains why there are relatively fewer unicorns out of the European market, which are generally low-growth.

The depth of people who have the entrepreneurial drive to establish themselves is obviously bigger in India. In terms of our family office, most of our recent investments in fintech and tech startups, all undisclosed, have been in India.

Q

What are Oak North’s goals for the year ahead?

We have a relentless focus on helping small and medium sizes businesses across the world that is in growth mode access better financing to fund their development – and we will ensure this continues. These businesses are the backbone of economies and communities, as evidenced by the thousands of new homes and jobs created from the loans we’ve done so far.

Our latest fundraising will also help our lending operations in the US, providing North American lenders with the capability to greatly expand business lending opportunities and accelerate their business lending, while creating efficiencies and improving credit quality. Our NYC-based teams have already built up a pipeline of more than $100 Million of initial deals with the first loans expected to be transacted this summer.

Moreover, the latest funding round will also help open doors to market-leading institutions, with the goal of enabling OakNorth to deploy the OakNorth Analytical Intelligence platform to more banks and lenders around the world.

Q

OakNorth is referred as a ‘rare breed of Fintech unicorn’.

Your thoughts on this.

While we are extremely proud and humbled to have reached a $2.8bn valuation as quickly as we have, and aunicorn valuation faster than any other business in European history, theunicorn tag isn’t what excites me. What drives me most is our achievements as a business.

Ultimately, valuation should be a function of the result of a business rather than a function of any potential hype. So, for me, what matters most is the actual business. The fact that we got the third new banking license in the UK in 150 years is a big positive. That we made a net income of £10.6m in our second year of operations (2017) and increased this by 220 percent last year to £33.9m is another huge positive. We are operating at four times the original plan (we had) when we launched. All these things are the core drivers that make me more excited than being a unicorn.

Q

What are the hurdles in a Fintech industry?

One of the biggest challenges that the fintech sector will need to overcome is to withstand a market correction, proving the viability of individual business models and the strength of management teams. However, I always believe that the best businesses thrive in times of economic turmoil and with over $1bn in capital raised and triple-digit profit growth, we’re in a strong position to turn the economic threat into a significant opportunity.

Q

You being on a pivotal role for an organization that has seen growth since being founded, what advice do you want to give to the young ideates?

Don’t sell too soon. As Copal grew, we began to get noticed.

We had one offer to sell for a million dollars that was considered.

Luckily, that buyer walked away. Then, in 2006, we had another offer for a lot more. We thought seriously about selling the company then—it was quite a lot of money and tempting, but we decided not to sell as we knew we had way further to go. By the time we did sell in 2014, we had a deal that would return over 175X capital to our original investors. So, my advice would be to think about ways of taking cash out of the business without having to sell it. For example, a dividend recap allows the founders to take cash out without having to sell their business.

Too much money in the bank when starting out is a bad thing.

When a company has too much capital available upfront, it tends to be built on fundamentally bloated cost structures.

Spending more money than is necessary becomes a part of the company’s DNA and changing this is hard. Having little to no money forces businesses to operate from a mentality of scarcity, and these businesses end up operating much more efficiently. We started Copal with just £40k so even though it was much easier to raise capital to start OakNorth, we still took a very frugal approach, ensuring we didn’t spend a penny more than we absolutely needed to. Make your employees investors. One of the best decisions we’ve made at OakNorth is giving our team the opportunity to buy equity, rather than just giving it away in the form of bonuses. Our teams have invested circa £3m in the business. When someone has skin in the game, it completely changes their mindset. They start to think like an owner in the business. They care that much more, negotiate that much harder, and understand just a little bit more the risk that our clients (the business owners we’re lending to) have taken in setting up on their own.

Q

How do you think technologies like AI and ML disrupt the analytical intelligence industry?

I’d probably be writing for the next month if I were to explain how AI and ML is disrupting the analytical intelligence industry but in terms of how we’re using it to change how things are done in our industry (i.e. business lending), this is obviously done through our platform, OakNorth Analytical Intelligence.

Q

Lastly, any major announcement that you want our readers to know?

We have plenty of major announcements coming soon. Watch this space!

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BIG PICTURE

DOGMA OF LED DRIVERS WITH MARKET LEADERS

Hakan Yilmazer

Global Head of Application Marketing for Lighting (PMM), Infineon Technologies AG

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BISINFOTECH|JUNE 2019|VOL 1|ISSUE 06

Randall Restle

Vice President, Applications Engineering for Digi-Key

Sumit Padmakar Joshi Vice Chairman and Managing Director, Signify India Innovations Limited

Rakesh Zutshi

Managing Director, Halonix Technologies Private Limited

COVER STORY

LED lights have become a vital phenomenon. The lighting technology consist many advantages that currently almost everyone has switched to lighting that cares over the conventional source of lighting. Speaking in a modern technological term, the LED lighting system has become smart, thanks to the advancement of the internet of things (IoT).

Though, this LED issue is not about the LED but putting a well-deserved spotlight to the component that provides the power to the LED – the LED DRIVER. Onboarding the tech veterans from the major industry player for LED Drivers in an interactive conversation with, HakanYilmazer, Global Head of Application Marketing for Lighting (PMM), Infineon Technologies AG l Randall Restle, Vice President, Applications Engineering for Digi-Key l SumitPadmakarJoshi, Vice Chairman and Managing Director, Signify India Innovations Limited l and RakeshZutshi, Managing Director, Halonix Technologies Private Limited who further simplify the importance of the LED driver and what the industry is currently on and about.

Critical Factors to consider while selecting a LED Driver SJ: Some major factors before selecting an LED driver includes whether one needs a constant current or a constant voltage driver. Other factors to consider are the type of LED to be used, its junction temperature, the application of the fixture, the space constraint within the fixture (if any), the commercial viability, whether dimming is required etc. For most of the applications, low voltage DC input LED drivers and high-voltage AC input are recommended primarily because of their reliability and stability. Nowadays, dimmable drivers are gaining popularity.

RZ: Choosing the right LED Driver is of utmost importance to power today’s state-of-the-art energy efficient LED lighting system. LED drivers are selected on the basis of the critical factors like the output current, output power, output voltage and IP Rating, etc. However, before selecting the LED Driver, it is important to figure out whether you need constant current LED Driver or constant voltage LED Driver.

RR: There are multiple markets for LED drivers and Digi-Key serves them all as the distributor carrying the latest technology devices for engineers to prototype their designs. Design factors vary greatly depending on the application. Consumer markets are focused on cost minimization once a design is in production whereas industrial and commercial markets focus on specific features. Consumer applications will typically put LEDs in series to reduce the number of drivers required to reduce cost and, since the LEDs are in series, the current supplied is the same to all LEDs thereby meaning that drive voltage is a prime consideration. Since power is current multiplied by voltage, drivers require heatsinking to remove heat. A commercial application might focus on driving multiple LEDs, perhaps of different wavelengths, in order to modulate color output. Critical factors of these drivers are adjustable output current per channel.

HY: I believe, the critical factors that needs to be addressed in a LED Driver are firstly i) efficiency, ii) reliability iii) brand vs non-brand iv) fulfilling the technical requirements, i.e. Power rating, Input / Output voltage range, output current, power factor / Total harmonic distortion and v) numerous other Future Trends of the LED Driver Market RR: The LED market was slow to take off as lighting fixture manufacturers were more mechanical companies than they were electronic firms. Their job was to stamp and shape metal to accommodate standard incandescent lamps. Many lighting companies remain fixture manufacturers because they are able to buy ready-made electronics including those that fit the pervasive incandescent lamp sockets. Then there are the custom manufacturers who combine both mechanical and electronic expertise to design exactly what the job requires but digital signage is another market driving demand. We believe the lighting market continues to evolve; we do not see the market consolidating. The flexibility of LEDs offers so much more than incandescent lights that new applications will continue to emerge. I remember being surprised to learn that LEDs were being used to determine the fertilized state of chicken

eggs. How many more applications are there? Probably a lot.

HY:Among the various trends, LED Drivers in the future are going to have the following: a. Higher power  600W – 1kW and even above b. Higher efficiency  > 90% c. Two channel for tunable white SJ:The future of the LED driver market looks attractive, with opportunities in the residential, commercialand industrial lighting sectors. The major growth drivers for this market are increasing building and construction activities, favorable government regulations to improve energy efficiency, and the increasing adoption of LED lighting in emerging countries.

In the next few years, the field will witness suppliers that adopt a more integrated approach. This will make future LED drivers significantly different from what we see today. Higher levels of efficiency will become the norm, and drivers will also deliver improved performance and power monitoring. In addition, the higher integration of chip systems (SoCs) will continue to reduce the size of the final product while maintaining the overall design reliability. Also, the concept of DOB – driver on board is slowly gaining popularity, which is basically a chip that acts like a driver. Since it’s a solid-state device, it does not have any decay element. Thus, its life is supposed to be almost similar to that of LEDs. RZ: Yes the LED Driver industry is expected to grow with a CAGR of 15.5% from 2018 to 2023, hence it looks very attractive and the scenario has presented a host of opportunities for the players to capitalize upon. The increasing construction activities, especially in the luxury housing market, besides the government’s renewed focus and commitment towards energy efficient lighting systems are altogether bringing significant growth and new trends in LED Driver Industry.

As far as the latest trends of the market are concerned, LED Drivers for residential, industrial and automotive LED lighting segment are expected to witness significant growth in demand. Already the drop in prices has helped the industry achieve next level of growth and the

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demand for new technology for LED Drivers is growing. The rapid urbanization and changing lifestyles of the people have also increased the demand for unique LED drivers for the products with compatible size and aesthetic look.

Other Industry Domains that LED Drivers are likely to hit HY: There is a highly anticipated growth of the devices especially in Urban / Vertical farming domain in the coming years.

RZ: Apart from residential, commercial and institutions LED lightings, the growth of LED Drivers is all set to be fueled by the emerging high demand in automotive lighting sector. Among the major growth drivers for the LED Drivers market are the increasing building and construction activities and the favorable government regulations in terms of energy efficiency and increasing adoption of LED lighting across the country.

RR: Digital signage is a growth driver.

Signage consists of the application of standard LEDs into arrays that can be programmed to illuminate nearly any pattern. I was recently in Asia and noticed signs changing from Chinese to English and other languages. These are huge, worldwide markets.Digi-Key’s customers are not required to share how they’re using LED drivers when they place an order, so we don’t know the specific applications unless they volunteer the information. We do know that it’s farreaching from medical applications to fertilized egg detectors, but ultimately the general lighting and signage markets are driving the market.

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SJ: In the coming times LED lighting is going to open up immense possibilities not only by lowering energy consumption levels but also enhancing the overall lighting experience with respect to control, monitoring/sensing and connectivity, coupled with the convenience of longer life and improved aesthetics. Some emerging technology trends that will shape the LED lighting market in India will be connected LED lights. Lighting systems will get smarter, as the possibility of autonomous, self-commissioning illumination systems is emerging. The industry has been transformed from

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analogue to digital as LED lighting allows users to control, monitor and measure lighting output. This transformation is taking place across public, home and professional lighting, and connected LED lights will emerge as the largest IoT device segment within the next five to ten years. Control devices, dimmers and wireless lighting with advanced sensors will cater to the needs of modern consumer.

Rough Roads in the LED Driver Market RZ: First of all, LED Drivers Market is being adversely affected by the intense competition from Chinese Players who offer their products at much cheaper price points though of substandard quality. Heavy revenue leakage due to the levy of GST is one of the major challenges faced by the local manufacturers. Lack of technical standardized norms for the LED Drivers Market is another challenge straining the growth of the LED Drivers Market.

SJ: LED technology has revolutionized the lighting market on many counts— efficiency, form factor, longevity and controllability, and continues to offer new lighting solutions. LED drivers have improved and been optimized over the past decade. The immediate challenges that could derail the growth of this industry in India are: • The basic problem of power conversion technology has remained largely unchanged. Little bit of government intervention will not only help the LED lighting industry to achieve sustainable growth but also help the country to move towards greater self-sufficiency in power generation. This will make more power available to the public, so that within the next two to three years, electricity can reach even the far-flung hamlets and the hutments of the poor, many of whom have never seen any artificial light other than oil lamps • Mushrooming low quality, unauthorized manufacturing units making sub-

COVER STORY

cutting edge of LED driver technology simply by visiting Digi-Key’s website and keying inLED driver into the search box.

As of today, they can find nearly 10,000 solutions. If it’s the latest devices that one seeks, one can click on theNew Products linkadjacent to the main category of device families to find the latest devices that Digi-Key has added to stock.

standard products, and low-cost Chinese imports of poor quality could result in low consumer confidence • Lack of awareness among consumers as well as institutional buyers about the efficiency of LEDs with respect to lux, wattage, life expectancy, etc. This results in the use of products with higher wattage but lower efficiency • Use of inefficient drivers, resulting in higher energy usage as well as product failure.

HY: The only challenge that hinders the market is the high cost pressure.

RR: Unfortunately, LEDs have a forward voltage drop across them and a current traveling through them and this means they must dissipate power in the form of heat. Since a driver must supply that voltage and that current, drivers have an issue with heat, too. There are semiconductor materials such as silicon carbide that can sustain very

high temperatures, but many enclosures cannot. Returning to medical applications, an LED might be small enough to position inside one’s body during a surgical procedure but the heat the LED and its driver generates might not be tolerated.

In this case, the LED and its driver have to be remote and the light fed into a light pipe that is then positioned on whatever needs to be illuminated. Of course, having an umbilical light cord is not desirable so heat extraction probably remains the more persistent challenge.

Companies Holding Up to the Latest Trends.

RR: Digi-Key’s mission is to offer the latest technology devices available for immediate delivery to fuel our customers’ innovation. Our stocking thresholds are very low. This means that a designer can depend on a device being areal device if Digi-Key stocks it. Customers can count on being able to procure devices for production once their prototypes are complete. Designers can stay on the

SJ: Signify firmly believes that constant improvements in design are always required. While various kinds of protection should be in place to provide a robust design, LED drivers need to be more reliable and provide better efficiency to save more energy. With the advent of new technologies, we have been improving the reliability and the efficiency of the drivers used for residential lighting, street lighting, downlights, landscaping, monument lighting, security lights, industrial lighting, office space lightingand much more. The new technology will help save energy, avoid damages from high voltage and current surges, and control lights remotely. Emerging trends in the LED driver industry include the development of visible light communication (VLC) LED drivers and of colour-adjustable drivers.

Our Next-generation LED lighting products are equipped with new technologies and solutions to meet the changing industry demands.

RZ: The emerging trends, which have a direct impact on the dynamics of the LED driver industry, include the development of visible light communication (VLC) LED drivers, and the development of color tunable LED drivers. India is wellpoised to become one of the largest manufacturers of LED Drivers on the back of the Make in India drive. At Halonix, we remain committed to create conducive environment for the development of every new technology with aim to enhance our product portfolio and capture a major share of India’s fast growing LED market segment.

HY: Infineon is focused on being customer connected with our dedicated global lighting team.

- JYOTI@BISINFOTECH.COM n

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OLD-FASHIONED WAYS OF PRODUCT DEVELOPMENT IS NO LONGER ADEQUATE TODAY From their latest acquisition to Ansys strategies for the Indian market, Rafiq Somani, Area Vice President, India and South Asia Pacific, Ansys elaborates Jyoti Gazmer their key focus, present technology transformation in ‘Simulation’ and latest technologies and impact in current simulationdriven product development and also how ‘Digital-Twin’ is changing product development of future. Edited Nub.

Rafiq Somani Area Vice President |India and South Asia Pacific|Ansys

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What is the major market focus of ANSYS in India and may not survive the highly competitive sales cycle. No matter what new markets is the company eyeing into? what the product is, be it agolf club or a washing machine, India is moving towards becoming a major manufacturing an assembly-line equipment that processes food or even a hub today. With government policies and schemes, we are personal care product, the manufacturers are focused on slowlyprogressing into a leading export oriented economy. producing cutting-edge products at a price that will entice However, one thing is certain, in order to be competitive in customers and make them buy. Another fact is that they also the international market, therapidly evolving manufactur¬ing want to take these products to market faster than anyone processes need to find new ways to shorten the designing else in their sector in order to maintain their competitive edge. and manufacturing cycles. Time is precious when it comes Again, simulation is your answer. Simulation decreases product to any innovation and this is where Simulation-Driven Product time-to-revenue, reduces R&D costs, minimizes bench tests Development comes in. That is the only way to get products and prototypes, generates quicker product approvals, offers a “right the first time”. This also means that our focus is wider and greater pipeline of products and leads to greater innovation. not a single industry specific. So, in terms of the industries ANSYS Therefore with the lowered development time and costs, is looking at – it includes automotive, energy, construction, reduced time to market, optimized product performance, high-tech, aerospace and defense, consumer products, simulation helps in outperforming your competition. academic, materials and chemical processingand more. What ANSYS and IIT D Signed MoU for Computational Fluid ANSYS offers is a comprehensive software suite that spans the Dynamics (CFD). Kindly express your views on this virtuous entire range of physics, providing access to virtually any field of engineering simulation that a design process necessitates. MoU? ANSYS and Indian Institute of Technology Delhi have The ‘connected era or things’ is bringing an emergence recently entered into a Corporate Social Responsibility (CSR) for product development teams to meet rapid user Agreement under which a Centre of Excellence for Promotion needs, how is ANSYS helping to bring these designs quickly of Computational Fluid Dynamics (CFD) has been set up at IIT and effectivein real world?

Delhi. The three-year project will be carried under the aegis of As you know, smart functionality and connectivity are no longer the Foundation for Innovation and Technology Transfer (FITT), an option for product development teams. In fact, today, IIT Delhi and it will continue until the end of academic year they are a competitive imperative. The question here is - How 2021-22 with an aim to promote education and research and can engineering teams quickly master the complexities of to improve employability of engineering students with specific power efficiency, signal integrity and other design challenges focus on PhD candidates. This collaboration will equip them as they deliver ongoing innovations? The answer: Simulation. with industry relevant knowledge and skills in CFD that can What simulation-driven product development does is take result in more environment friendly solutions for the future.As engineering simulation to another level. If you are focused on the global leader in pervasive engineering simulation, ANSYS low-cost, durable goods that increasingly offer energy efficiency, is excited about the prospects of such a partnership with a it is engineering simulation that will come to your rescue.We all premium institute like IIT Delhi. We also have similar agreements know that any product that lacks any of these qualifications with IIT Bombay and IIT Madras.

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Can you tell our readers about your next-gen ‘Pervasive Engineering Simulation’?

We always say that if you’ve ever seen a rocket launch, flown on an airplane, driven a car, used a computer, touched a mobile device, crossed a bridge or put on wearable technology, chances are you’ve used a product where ANSYSplayed a role in its creation. That itself is pervasive.

The old-fashioned ways of product development is no longer adequate today. So, with today’s competition levels in the market and the constant race for innovation, simulation is becoming more pervasive. Earlier it was an occasional resource applied in the design of only the most complex engineering products. This has changed.Engineers are put under tremendous pressure because they have to design innovative products that work perfectly the very first time itself and they also need to get them out into the market before the competition does so. The product also has to be reliable once it enters the market. These goals may seem to be almost impossible to reach, however simulation solutions involving any area of physics, be it structures, fluids, electronics or even combinations of these, will provide engineers with the speed that is needed to turn this into anactuality.

Engineers can see real-time results of simulation throughout the modelling process and there is unmatched understanding of their design applications.

Solutions like Discovery Live offer a unified modelling and simulation environment and eliminate the limitations between simulation and CAD. When it comes to products, simulation is being applied from early ideation through manufacturing, operations and even maintenance. Products have been transformed through simulation – be it cars, airplanes and trains, consumer el ec tro n i c s, mac hine r y a nd e v e n healthcare. Earlier, product simulation observed single characteristics: one physics, one component, one design, but now we explore multiple designs at the system level with interactions across several physical and digital realms. When it comes to vehicles, on-track testing is expensive and not always feasible. It is simulation that makes design changes easier and more cost effective.

Today, we are looking at an ultimate revolution in engineering and product development thanks to simulation-driven product development. Needless to say, pervasive engineering simulation is the future and it is already here.

in smart connected products is: a digital twin. What it does is collect data from numerous sensors on the physical asset and use this data in the virtual model in order to monitor performance. The transmitted data is then used as inputs for running simulations that can predict the future operations of the asset. Today, simulation is being leveraged by engineers across all disciplines to improve the functionality of current smart connected products. Not only that, simulation also helps in inventing new products that we have not even been able to imagine yet.

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What are the new business models emerging in the engineering simulation business?

Additive manufacturing- what is popularly known as 3D printing, is poised to revolutionize production. It can quickly turn a digital design into a physical product and supports mass customization and fast response times. However, material costs that are high means that product developers need to get their designs right the first time and every time. There is not much room for error.

Digital twin- It promises to extend the value delivered by simulation beyond product development to the entire life cycle of a product — enabling it to be studied under its actual operating conditions in its unique working environment. By creating a replica of the actual product system in a digital environment, engineers can anticipate and address potential performance and maintenance issues before they occur.

The future is already here and it is pervasive engineering simulation. The bridge between design and reality is becoming shorter with simulation.

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How do you look into the future of simulation and what major trends will shape this technology?

The future is already here and it is pervasive engineering simulation. The bridge between design and reality is becoming shorter with simulation. With today’s competition levels in the market and the constant race for innovation, simulation is becoming more pervasive.

Today, engineers are under tremendous pressure to design innovative products that work perfectly the very first time itself and they also need to get them out into the market before the competition. Reliability also needs to be there when it enters the market. These almost impossible goals are possible with simulation. Simulation solutions involving any area of physics, be it structures, fluids, electronics or combinations of these, will provide engineers with the speed that is needed to turn this into reality.

The convergence of mechanical, electronic, and software How strong is ANSYS R&D in India and if any expansion components or in simple words ‘Smart Things’ has broughtplans? in more complexity. How has ANSYS or say simulation-driven Today’s players in all industries face stiff competition in the approach has revolutionized the product-design cycle?

There is this amazing technology that connects everything market. To succeed, companies are definitelyrelying heavily on today and that is what we call – “smart”. What is the ultimate R&D effort that serves as a blueprint towards successful product

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performance. I wouldn’t be able to disclose our entire plans reliability becomes a key challenge, requiring companies to and works, however we are there to support R and D with our perform analysis earlier in the design cycles. This acquisition of multiple collaborations with academic institutions in order to DfR Solutions will give customers the ability to push electronics support their research in various fields. ANSYS development reliability analysis earlier in their design cycles – saving centre in India, which is located in Pune form the second significant costs on testing and accelerating product design. largest hub (after the US of course) of the company. With Lastly, how has the last FY been for ANSYS and what over 300 employees focusing on various crucial activities, new achievements and success stories ANSYS aims to the team works hand in glove with the development centre log in this FY? based out of the US. Our revenue and growth details have already been announced ANSYS lately acquired DfR Solutions, what has been the and we are happy to say that for FY 2018, GAAP and nonstrategy behind the acquisition?

GAAP revenue growth was 11% and 12%, respectively, or DfR Solutions is the developer of Sherlock, the industry’s 10% and 11% in constant currency. We grew double-digits only automated design reliability analysis software. ANSYS’ across all key financial metrics for the quarter and the year. comprehensive multiphysics solutions, combined with Sherlock’s We are looking forward to 2019. Our vision of making simulation accurate reliability analyses, will provide a complete designer- pervasive across the product lifecycle is resonating with level toolkit enabling customers to quickly and easily analyze customers and partners. With a product portfolio that is for electronics failure earlier in the design cycle – saving users stronger than ever ANSYS is proud that we can solve many time and money during the development process. Engineers of the challenging problems faced by our customers as can then subject their products to several environmental they bring next-generation products to market. With our stresses, including temperature and power cycling, harmonic continued focus on transforming our go-to-market, and with vibration, mechanical shock and bending, to help ensure new partnerships with leading companies who are licensing manufacturability and maximize the life of a product.

ANSYS technology, we are unlocking future opportunities. I As electronics proliferates in nearly every industry, electronics am excited about our growth prospects in 2019 and beyond.

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TELECOM UPDATE

HOW TO CHOOSE A LUCRATIVE 5G TELECOM SITE IN INDIA 5G is the new leapfrog in tele communications and the impact of 5G will be witnessed all over. 5G determines not just the future of Internet but will help in the technologies and buzz word like IoT, IIoT, Industry 4.0, Cloud and what not to define digital transformation.

Withal its massive criticality and sophistication of 5G, determining a suitable site for 5G cells brings more complex than selecting a site for 3G or 4G. Due to the extensive technological sophistication of 5G, selecting a site for 5G cells requires certain is more complex than selecting a site for 3G or 4G. 5G is expensive, though, telecoms may not have finalized the rates at which they will offer the technology to the end consumer. It makes good business sense to invest in the area which houses an affluent population.

With the need of 50 times more antenna locations than 3G or 4G, 5G signals are powerful but they are unable to travel far and wide like its previous incarnations.

Not concentrating at a single location, 5G cells are wide - spread on different locations.

In case of a network breakdown issues, users can continue to get efficient services.

Since the 5G network cells would be

new customers should get the benefit of 5G connectivity, hence it becomes challenging. Telecom operators can take the help of Location technology to identify people who would be most interested in upgrading from 4G and focus on that target group initially.

evenly distributed in a large area, it’s important to select a location.

Population Classification 5G signals do not travel as far as current radio frequencies do. Therefore, in order to maximize the network coverage, one needs to install in huge population areas. Telecom companies will need the distribution of those areas on the map.

Using Location Intelligence companies can figure out the area which has the desired population composition.

Apart from this, telecoms will also like to enumerate high Point of Interest (POI) areas.

Identifying Potential Clients In a short span of time existing and

Accessibility 5G is expected to add unlicensed frequencies such as the 3.5 GHz to its list of new frequencies for mobile use.

Ahead marketing plans from telecom companies are evitable. Telcos need to visualize points of interest on a map to factor in these kinds of areas with high demand while selecting their cell sites.

Another crucial factor for ensuring roundthe-clock high-speed connectivity is the location of the cell site. Cells do require maintenance and regular inspections, and hence the location should be one that is neither congested nor too inaccessible.

Manually making a list of these locations can prove to be a cumbersome task since global telecom operators would not be acquainted with every region and there would be chances of margins of error. Regional regulations and laws also play a big role in mainstreaming of any technology.

INDIAN TELCOS, ETSI MoU ON TELECOM STANDARDIZATION

HIMACHAL FUTURISTIC COMMUNICATIONS BUYS RADDEF

Telecom industry body Cellular Operators Association of India (COAI) and ICT standardization organization ETSI has come together to ink a strategic MoU. The new MoU attends to jointly work towards telecom standardization especially focusing on emerging technologies. COAI’s director general Rajan S Mathews and Luis Jorge Romero, DG, ETSI signed the MoU as both the organizations have the common objective to perform and promote, directly or indirectly, regional and international standardization in ICT. “This partnership will allow us to have a regular and continuous dialogue between EU and India to strengthen the standardization efforts in the field of ICT, through various workshops, conferences and meetings,” said COAI’s Mathews.

Seconded European Standardization Expert (SESEI) local representative of ETSI based in New Delhi will be working closely with COAI through this MoU on common agendas and promote ETSI-India cooperation on standards related issues.

Himachal Futuristic Communications (HFCL) buys 90% of the equity shares of RADDEF. With this buyout, HFCL becomes a subsidiary of the Company, w.e.f. May 15, 2019.

The acquisition would result in benefit of operational synergies and the Company will be able to explore untapped growth in the Telecom and Defence business verticals of the company. The cost of acquisition is Rs 90,000 towards 9,000 fully paid-up equity shares.

HFCL is one of India’s largest telecom network turnkey implementation companies, with wide and deep capabilities and domain expertise in rolling out advanced telecom networks.

RADDEF was formed with an aim to provide Common Of The Shelf (COTS), Radio Frequency (RF) & Microwave products to Indian and worldwide customers covering Navy, Military, Aerospace, Process Control & Automation, Communication, Test and Measurement Industry.

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INDUSTRY LAUNCH

New Impedance & Potentiost at Analog Front End Analog Devices has revealed new electrochemical & impedance measurement front end that enables the next generation of vital sign monitoring devices and intelligent electrochemical sensors.

Features: • 16-bit, 800 kSPS ADC • Input buffers and programmable gain amplifier • Sequencer controlled GPIOs

Applications: • Electrochemical measurements • Electrochemical gas sensors •P otentiostat/amperometric/ voltammetry/cyclic

Availability: Now for $4.17 in 3.6 mm × 4.2 mm, 56 ball WLCSP package

Arm Demonstrates New IoT Test Chip and Board Arm with Samsung Foundry, Cadence, and Sondrel, demonstrated the first 28nm fully-depleted silicon-on-insulator (FD-SOI) embedded MagnetoResistive Random Access Memory (eMRAM) IoT test chip and development board, at the Samsung Foundry Forum.

Features: • The Musca-S1 is designed to offer more choice to IoT designers in their systemon-chip (SoC) development journey.

• Like the previous Musca solutions, the Musca-S1 test chip board consists testing and evaluation of new eMRAM technology

Availability: The Musca-S1 will be available in limited quantities in Q3 2019, and is targeted for loan to customers in Q4 2019.

Cypress' Fully Integrated USB-C Charger Solution Cypress Semiconductor introduced the newest member of USB-C Power Delivery family, the EZ-PD Power Adapter Generation 1 (PAG1) solution.

Features: • The PAG1 provides best-in-class efficiency, increased reliability, and a reduced bill of materials for OEMs. • USB-C powers devices up to 100W and enables the consolidation of different interfaces on the same port.

Availability: The EZ-PD PAG1 family is now sampling to major OEMs. The controllers will be in production in the fourth quarter of 2019.

New Encapsulation Resins from Electrolube for Indian Market Electrolube launches a brand new series of encapsulation resins tailored for Indian market. Formulated at the company’s manufacturing facility in Bangalore, the new resins have been produced using local materials to ensure highly competitive pricing and short lead times. The series of encapsulation resins from Electrolube was developed with technical support and key local knowledge.

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Features: • The new encapsulants also carry a full seal of approval from the UK parent company for quality and innovation compliant with internationally recognised standards.

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Applications: • Automotive • Power Supply

Availability: Available Now

INDUSTRY LAUNCH

Infineon Ultra-Small Barometric Pressure Sensor Infineon Technologies introduces the XENSIV DPS368. The miniaturized digital barometric pressure sensor is capable of measuring both pressure and temperature. It offers an ultra-high precision of ±2 cm and a low current consumption for precise measurement of altitude, air flow and body movements.

Features: • Package dimensions: 8-pin LGA, 2.0 x 2.5 x 1.1 mm3 • Precision: ± 0.002 hPa (or ±0.02 m) • Rel. accuracy: ± 0.06 hPa (or ±0.5 m) • Abs. accuracy: ± 1 hPa (or ±8 m)

Applications: Mobile applications, wearable devices, in home appliances for airflow control, in drones for flight stability and in medical devices such as smart inhalers.

Availability: The XENSIV DPS368 pressure and temperature sensor can be ordered now.

Microchip First Commercial eSPI to LPC Bridge To allow developers to implement the eSPI standard while preserving large investments inlegacy LPC equipment, Microchip Technology announcesfirst commercially available eSPItoLPC bridge. The ECE1200 bridge enables developers to implement the eSPI standard inboards withlegacy LPC connectors and peripherals, substantially minimizing development costs and risk.

Features: • Maintain long lifecycles while supporting the eSPI bus technology that is required for newcomputing applications utilizing the next generation of chipsets and CPUs.

Applications: Industrial computing equipment

Availability: The ECE1200-I/LD is available today in a 40-pin VQFN package for$2.66 each in 10,000-unit quantities.

ROHM Offers Automotive-Grade 1200V-Rated IGBT Series ROHM announced the addition of four new automotive-grade 1200V-ratedIGBTswhich are ideal for inverters used in electronics compressors and for switching circuitsused inpositive temperature coefficient (PTC) heaters. The newRGS seriesrepresents ROHM’s large lineup of AEC-Q101-compliant IGBTs in both 1200V-rated and 650V-rated variants. This seriesdelivers class-leading low conduction loss that contributes to reducing size and to improving efficiency of applications.

Features: • Class-leading low conduction loss • Supports a broader range of applications with large portfolio

Applications: • Electric Compressors • PTC heaters

Availability: Now

ST Makes IoT Sensing Accessible with IoT Plug and Play ST launchesSensorTile.box to help everyone, from young people to expert designers, discover the power of IoT and quickly understand how they can easily collect and send sensor information to the cloud.

Features: • A llow users to watch the sensors function as a pedometer, asset tracker, environmental monitor, or as other instruments.

Applications: • For more experienced designers, SensorTile.box provides developer and expert modes that help build sophisticated applications using a graphical wizard or by writing custom embedded code

Availability: available from the beginning of June

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INDUSTRY UPDATES

INFINEON, AIC-SANGAM FOSTERS START-UPS IN INDIA Infineon Technologies and Atal Innovation Mission’s AIC-Sangam have signed a Memorandum of Understanding (MoU) to nurture technology start-ups with a focus on making lives easier, safer and greener.

Under the collaboration, Infineon will sponsor lab equipment and offer business and technical guidance as well as training specific to building on Infineon technology platforms. Experts from Infineon will work closely with the start-ups on prototyping and solution development at AIC-Sangam. Incubated start-ups will also have access to Infineon’s product samples and maker kits as well as workshops and events. Going forward, AIC-Sangam and Infineon will jointly identify problem statements for prospective start-ups.

Khethworks, one of the start-ups incubated at AIC-Sangam, is already working with Infineon. Khethworks mission is to help small-plot farmers have unprecedented control over their lives and livelihoods through affordable and high-performance technology.

Speaking on the occasion,Vinay Shenoy, Managing Director, Infineon Technologies India said, “Infineon’s mission to make life easier, safer and

greener resonates well with AIC-Sangam and start-ups like Khethworks. We build semiconductor technology to help innovative entrepreneurs realize their products and unleash the potential of their applications. By contributing towards a sustainable future for India, we are also fulfilling Infineon’s mission.”

Commenting on the partnership with Infineon, Karthik Chandrasekhar, CoFounder & Chairman, AIC-Sangam said, “Climate Change is the greatest challenge of our generation. Most of Climate Change is anthropogenic which makes Sangam’s investment in and incubation of entrepreneurial enterprises that are helping customers make more sustainable choices the most meaningful tool to fight Climate Change. We feel this is a shared goal between us and Infineon. We look

ST HOSTS INAUGURAL INDUSTRIAL SUMMIT IN SHENZHEN

STMicroelectronics will host its first Industrial Summit at the Grand Hyatt Luohu Shenzhen, China, on May 29.

ST’s Industrial Summit 2019 intends to bring together key industry leaders, medium and small enterprises, partners, and industry associations from the wide-ranging and highly fragmented industrial market to explore and push the frontiers of smart innovation in Motor Control, Power and Energy, and Automation.

• Motor Control • Power and Energy • Automation

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Other Demo Highlights: • Cobots and Robotic Solutions • Smart Factory v2.0 • Smart Home (Augmented by ST)

BISINFOTECH|JUNE 2019|VOL 1|ISSUE 06

forward to working closely with Infineon on bringing forward new climate-smart technologies for the Indian consumers or ushering in Industry 4.0 for SMEs that can lead to inclusive development and creation of communities that are resilient to climate change”.

Ramanan Ramanathan, Mission Director, Atal Innovation Mission, NITI Aayog further established the importance of industry and start-up collaborations, stating, “Partnerships between international corporates and our Atal Incubation Centres enable incubated start-ups to accelerate their time to market and extend their industry reach, whilst catalysing innovation by identifying opportunities for new start-ups to be created. Such start-ups bring with them new technologies and processes and this will contribute greatly to India’s growth in the coming years. We are delighted to have Infineon Technologies partner with AIC-Sangam to support start-ups across the clean technology ecosystem.”

AIC-Sangam is India’s first dedicated clean technology incubator, set up as a partnership between Sangam and Atal Innovation Mission, NITI Aayog, Government of India under the Atal Incubation Centre scheme.

VICOR REVEALS NEW 800V BUS CONVERTER MODULE Vicor has announced its latest 800V Bus Converter Module.

The 800V BCM4414 is a 1.6kW, isolated, 1/16 fixed-ratio, bus converter module (BCM), that can operate from a 500V to 800V input voltage, to deliver SELV output voltages with 97% peak efficiency.

The module complements the existing Vicor 700V BCM4414, to create a family of products with reinforced isolation (4,242VDC) and bidirectional voltage conversion capability.

The BCM can be easily paralleled into higher power arrays and the SELV outputs can be stacked (connected in series) for higher output voltages.

Both BCMs are available in a 111 x 36 x 9.3mm VIA (Vicor Integrated Adapter) package which has integrated PMBus communication, EMI filtering, and voltage-transient protection. The VIA’s planar form factor package simplifies heat management and ease of interface to a wide variety of cooling technologies.

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GUANGZHOU ELECTRICAL BUILDING TECHNOLOGY JUNE 09-12, 2019, GUANGZHOU, CHINA

ELECTRICAL ENGINEERING, BUILDING AND HOME AUTOMATION

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CHINA ELECTRONICS FAIR CHENGDU JULY 11-13, 2019 CHENGDU, CHINA

INTELLIGENT MANUFACTURING. CIVIL-MILITARY INOSCULATION. ELECTRONIC COMPONENTS

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10TH EDITION INDIA SYMPOSIUM JULY 19, 2019 CHENNAI, INDIA

INDUSTRIAL ROBOT, SMART SENSORS AND ACTUATORS, INFORMATICS AND SECURITY

Website : www.iotsymposium.co.in E-mail : kiran@iotsymposium.co.in

BEIJING INTERNATIONAL CONSUMER ELECTRONIC EXPO AUGUST 02-04, 2019, BEIJING, CHINA

LIGHTING AND CONSUMER ELECTRONICS

Website : http://www.3eexpo.cn/en/ E-mail : swq@zhenweiexpo.com

IOT INDIA CONGRESS 2019 AUGUST 22-23, 2019, BENGALURU

HEALTHCARE, MANUFACTURING, TELECOM, SMART CITIES AND ENERGY

Website : www.iotindiacongress.com E-mail : shreayabajaj@theiet.in

AUTOMOTIVE WORLD SEPTEMBER 05-07, 2019 PORTMESSE NAGOYA, JAPAN

TECHNOLOGIES SUPPORTING THE EVOLUTION OF CAR ELECTRONICS EXHIBITED TOGETHER

Website :www.automotiveworld-nagoya.jp E-mail : car-nagoya@reedexpo.co.jp

NEPCON NAGOYA SEPTEMBER 18-20, 2019 PORTMESSE NAGOYA, JAPAN

ELECTRONICS DEVELOPMENT / IMPLEMENTATION EXHIBITION

Website :www.nepconjapan-nagoya.jp E-mail : visitor-eng.inw-n@reedexpo.co.jp

LPS - LED SYMPOSIUM EXPO SEPTEMBER 24-26, 2019 AUSTRIA

DESIGN, TESTING AND PRODUCTION OF LIGHTING SYSTEMS, CONTROLS AND EQUIPMENT

Website :www.led-professional-symposium.com E-mail : info@LpS2019.com

ELECTRONICA INDIA SEPTEMBER 25-27, 2019 GREATER NOIDA, INDIA

INTERNATIONAL TRADE FAIR FOR ELECTRONIC COMPONENTS, SYSTEMS AND APPLICATIONS

Website :electronica-india.com E-mail : info@mm-india.in

KOREA ELECTRONICS SHOW OCTOBER 08-11, 2019 KOREA, SEOUL

AI, IOT, VR-AR, ROBOTS, SMART HOME AND AUTOMOBILE & IT

ELECTRONICASIA OCTOBER 13-16, 2019 HONG KONG

ELECTRONIC COMPONENT & TECHNOLOGIES

Website : www.kes.org E-mail : kes@kes.org

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