BPM - BATCH PROCESS MODULE Flexibility to optimize your process • Sputter • De-Gas • Soft Etch The Radiance Batch Process Module (BPM) can be equipped with up to 6 process stations for Sputter, DeGas or Soft Etch. Modules are available for direct handling of either 200mm or 300mm nominal substrate sizes or for use with substrate carriers in the case of irregular substrate shapes or mixed batches. Process flexibility is key to the BPMs design philosophy and substrates or carriers are mounted on a turntable which can be heated or cooled according to customer specifications. Source substrate separation is variable within a defined range and each process station can be configured for up to 4 gas inlets giving you the freedom to optimize the basic environment whatever your process.
BPM configured with single SSC cathode
Module Capability
Applications
Co-Sputtering
• Alloys • Rate enhancement • Co-sputtering with up to 6 sources possible
IAD / PIAD
• Stress Control • Densification
Multilayer Deposition
Highly Repeatable Coatings in Optics. Sensors & Optoelectronics
In situ process metrology options include broadband optical monitoring for the most accurate end point termination, pyrometry for direct substrate temperature measurement in sensitive processes and film stress measurement in thick or complex stack designs. Hinged flanges enable access to individual sources and a simple lift mechanism enables the whole chamber to be opened for access to the central substrate table. All internal shielding and chamber parts can be exchanged with ease and an integrated heater ensures rapid conditioning during pump down. The BPM can be specified in combination with other batch or single process modules (SPMs) via a range of standard Radiance transport platforms.
BPM - BATCH PROCESS MODULE
Vacuum Performance
Each process station is equipped with up to 4 gas inlets and individual shutters
Pumping Configuration
Turbomolecular, Cryogenic, or combinations
High Vacuum Valve
Throttle position regulated from “Open” to “Closed”
Base Pressure
<9x10-8mbar
Leak Rate
<5x10-5mbarl/s
Chamber Conditioning
Heating up to 80°C integrated
Target Change Times
Target only: < 10 minutes Vent to production restart: 1-2 hours according to process
Process Options Source Technologies
Sputter, Etch or De-Gas with individual source shutters and up to 4 gas inlets
Source Dimensions
From 200mm to 400mm
Source to Substrate Distance
Variable up to 135mm
Table Modes
Dynamic up to 200rpm, Static or Oscillating,
Pressure Control
Upstream or Downstream
Individual Substrate Options
Front side Heating (250°C) or backside Heating (500°C), Rotation, Cooling (either Water or Backside Gas)
Typical wafer batch sizes for 200mm system* Diameter 50mm
182 on carrier
Diameter 100mm
52 on carrier or 25 direct
Diameter 150mm
21 pieces
Diameter 200mm
16 pieces
* capacities for foils, thin wafers, complex shapes on request
Easy access for maintenance and cleaning
Typical Footprint 2160 x 2140mm, (1800mm high)
Evatec Ltd. Lochrietstrasse 14 CH-8890 Flums Switzerland Tel: + 41 81 720 1080 Fax: + 41 81 720 1081 info@evatecnet.com www.evatecnet.com Product descriptions, photos and data are supplied within the brochure for general information only and may be superseded by any data contained within Evatec quotations, manuals or specifications.