SPM - SINGLE PROCESS MODULE One platform - no end of possibilities • Sputter
• De-Gas
• PECVD
• Soft Etch
• ICP
• RTP
• RIE The SPM can be equipped with PVD, ICP, PEVCD, RIE, De-Gas or Soft Eetch technologies and can be configured for direct wafer handling or substrate carriers according to customer requirements. Process engineers can specify whatever they need for reactive deposition or etch processes with integration of up to 8 process gases, and either upstream or downstream process pressure control. A whole range of substrate chuck options including heating and cooling together with additional capability for variable source substrate separation and substrate rotation make the SPM highly flexible for initial process development and the changing process needs of mass production systems over tool lifetime. The SPM can be integrated with a range of different size transport modules with vacuum cassette elevator or Evatec’s Manual Load Port with single wafer for small R&D systems. In common with Evatec’s BPM batch process module, simple source access enables rapid target change, cleaning or maintenance procedures. Integration of all necessary power supplies and control hardware into the SPM frame along with compact module design enables simple addition of SPM module(s) to existing Radiance cluster tools as process or production needs evolve.
SPM configured for sputter with SSC cathode. Source hinge enables easy access for target change
SPM - SINGLE PROCESS MODULE
Vacuum Performance Pumping Configuration
Turbomolecular, Cryogenic, or combinations
Base Pressure
<9x10-8mbar
Leak Rate
<5x10-5mbarl/s
Chamber Conditioning
Up to 60°C
Process Options
Radiance configured with • UTP 200 transport module • SPM equipped for PECVD • SPM equipped with single SSC125
Source Technologies
Sputter, De-Gas, ICP, Microwave, RIE, Soft Etch, PECVD, RTP
Gas Inlets
Up to 8 according to process technology
Pressure Control
Upstream or Downstream
Chuck Type
Recessed, full contact, passive, or electrostatic
Substrate Heating
Up to 800°C according to customer requirements
Substrate Cooling
-25°C to +40°C according to configuration
Biasing
RF Optional
Source to Substrate Distance
Selectable in defined range
Substrate Rotation
Up to 200 rpm
Process Metrology Options Substrate Temperature
Via chuck or direct on substrate according to application
Typical wafer batch sizes for 200mm system* Diameter 50mm
12 on carrier
Diameter 100mm
4 on carrier or 1 direct
Diameter 150mm
1 piece
Diameter 200mm
1 piece
* capacities for foils, thin wafers, complex shapes on request
Typical Footprint 860mm x 1200mm (height 1600mm)
Evatec Ltd. Lochrietstrasse 14 CH-8890 Flums Switzerland Tel: + 41 81 720 1080 Fax: + 41 81 720 1081 info@evatecnet.com www.evatecnet.com Product descriptions, photos and data are supplied within the brochure for general information only and may be superseded by any data contained within Evatec quotations, manuals or specifications.