A LOW POWER, LOW PHASE NOISE CMOS LC OSCILLATOR

Page 1

Int. Journal of Electrical & Electronics Engg.

Vol. 2, Spl. Issue 1 (2015)

e-ISSN: 1694-2310 | p-ISSN: 1694-2426

A LOW POWER, LOW PHASE NOISE CMOS LC OSCILLATOR 1

Pankaj Aseri, 2R.C Gurjar 1,2 Microelectronics and VLSI Design, E&I Department, Shri G. S. Institute of Technology and Science, Indore, M.P, India 1

pankajaseri17@gmail.com,2rgurjar@sgsits.ac.in

Abstract:- In this paper a Double Cross Coupled Inductor capacitor based Voltage Control Oscillator (LC-VCO) is designed. In the proposed circuit the phase noise, tuning range with respect to control voltage, output power and the power dissipation of the circuit is analysed. Phase noise of approximate -96 dBc/Hz at frequency of 1MHz, frequency tuning range of 4.8 to 8.3 GHz (corresponding to 53.0% tuning range) obtained by varying the control voltage from 0 to 2.0 V, Output power of circuit -8.92 dBm at 50 Ohm resistance terminal and the power consumption of Circuit is 3.8 mW. This VCO are designed for 5.5 GHz. The circuit is designed on the UMC 180nm CMOS technology and all the simulation results are obtained using cadence SPECTRE Simulator. Keywords:- Phase Noise, LC-Tank, CMOS, Voltage controlled Oscillator (VCO), Low power.

I. INDTRODCTION The typical performance parameters of a VCO are phase noise, tuning range, output power and DC power consumption [1]. The VCO is the most important building block of RF IC design. It play a vital role in many applications such as GSM, Bluetooth, WLAN, Wireless Personal Area Network (WPAN) and Wireless Sensor Network etc. [2]. The most difficult task is to design the Voltage Control Oscillator in the Front end block of RF-IC design. In the today’s world of perfection in technology there is a need to design and develop the circuit with Low power and Low noise at the Higher Frequency. Out of the total power consumption of a system the oscillator power consumption can be a significant portion. So over- all power consumption can be reduced by minimizing the power consumption of the VCO [2]. Some basic oscillator circuits such as local oscillator are limited to the Mixer circuits at receiver end. But, at the high frequency the different topology of oscillators are used that are capable to provide low phase noise and most important term smaller power at high frequency range i.e. Radio frequency range. For higher quality receivers, an L C oscillator topology is chosen over a relaxation oscillator because the band pass nature of the resonant tank in the L C oscillator provides the lowest phase noise [3]. In this paper, LC Voltage Controlled Oscillator is designed, the proposed circuit shows frequency tuning range in Giga Hertz due to variation in control voltage variation. In the SECTION II and SECTION III of this paper provides information about the LC-VCO circuit description and theoretical analyses of proposed circuit. SECTION IV and SECTION V shows the simulation results and conclusion.

II. LC-VCO CIRCUIT DESCRIPTION The schematic circuit of the double cross coupled differential LC-VCO including the differential buffer at the output side is shown in Fig.1. The proposed LC-VCO form by the PMOS and NMOS, inductor, and capacitor. This LC-VCO is having of Cross Coupled PMOS transistors (M4, M5) and Cross Coupled NMOS transistors (M0, M3). Here PMOS and NMOS pairs are in parallel and due to this negative resistance is generated. M14 and M12 transistors are used as an output buffer. For biasing proposed circuit a current mirror technique is used. (M1, M2) transistors are being used as a current mirror. The Oscillation frequency can be obtain from M14 and M12 NMOS transistors. This proposed circuit provides better Phase Noise performance measure because of double switch Cross Coupled structure.

Fig: 1. Cross Coupled double switch LC-VCO. III.THEORITICAL ANALYSES OF PROPOSED CIRCUIT The proposed circuit shown in the fig.1 consists of inductor and voltage controlled capacitor (capacitor design through MOS transistor) these two passive element forms or resonant tank circuit. In the proposed circuit MOS transistors (M1, M2) and (M3, M4) are cross coupled transistors, which forms negative resistance and this negative resistance basically compensated the resonator losses. Voltage across the tank circuit is given by:-

≈ A sin( )

(1)

Where = ωt, ω being the angular frequency of oscillation. Equations for bias current ( ) in NMOS and PMOS pair is as follows:-

NITTTR, Chandigarh

EDIT -2015

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