Low power high performance 10t full adder for low voltage cmos technology using dual threshold volta

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Low Power High Performance 10T Full Adder for Low Voltage CMOS Technology Using Dual Threshold Voltage Surbhi Kushwah1, Shipra Mishra2 1

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M.Tech. VLSI Design, NITM College Gwalior M.P. India 474001 Asst. Prof. VLSI Design., NITM College, Gwalior, M.P. India 474001

Abstract:Reduction in leakage power has become an important concern in low-voltage, lowpower, and high-performance applications. In this paper, we use the dual-threshold technique to reduce leakage power by assigning a high-threshold voltage to some transistors in noncritical paths, and using low-threshold transistors in critical path(s).The intention of this paper is to reduce leakage power and leakage current of 1-bit Full Adder while maintaining the competitive performance with few transistors are used (transistors count 10). A new high performance 1-bit Full Adder based on new logic approach is presented in this paper. Recent research has revealed that with the gradual shrinking of device sizes, the leakage power dissipation is becoming more and more dominant, and it is likely to become comparable to switching power dissipation in future generation VLSI circuits. This has motivated us to develop suitable techniques for the reduction of leakage power dissipation in dynamic CMOS circuits, a problem which has not been addressed by any researcher. This paper proposes a technique for containing the leakage power using two threshold voltages (dual-VT) in the realization of circuits. Necessary care has been taken such that the dual-VT dynamic circuits can be kept in standby mode and dissipate small leakage power. Results show that the dual-threshold technique is good for leakage power reduction during both standby and active modes Keywords—Low power,Full adder, Dual-Vt technology, CMOS, leakage power. I. INTRODUCTION Leakage power has become a top topic for IC designers. Leakage power is the result of unwanted sub-threshold current in the transistor channel when the transistor is turned off. This sub-threshold drives the leakage power, strongly influenced by variations in the transistor threshold voltage V T (the voltage applied to the gate electrode that turns on the transistor). Also the leakage power dissipation is roughly proportional to the active area of a circuit. As technology scaling progressed through, subthreshold leakage current constituted an important factor of the total power consumption of CMOS circuits. As CMOS technology continues to scale, the supply voltage (VDD) falls with each generation and contributes the power consumption. However, the transistor threshold voltage (Vt) should be reduced at the same rate to maintain adequate gate overdrive, which in turn allows the enable circuit performance to improve by about 30% in each generation. However, lower Vt causes transistor sub-threshold leakage currents to increase exponentially; and hence the bit-line active leakage currents of register files also increase exponentially and the noise immunity of the bit-lines is dramatically reduced. Alternative bit-line circuit techniques are required to curtail this trend and combine good noise immunity with high performance [1]. Many techniques were proposed to limit the impact of sub-threshold leakage. Dual-Vt design was introduced as a technique that assigns Vt,L to critical path transistors and Vt,H to some noncritical path transistors, taking care not to generate new critical paths in the process [2]. II. FULL-ADDER A one bit full adder takes two one bit inputs and adds them together. To make a full adder, it also needs to consider a carry in and carry out flag. Thus a one bit full adder takes three 1bit inputs and contains two one bit out puts. The first inputs are the two bits are to be added together, @IJRTER-2016, All Rights Reserved

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