IJSTE - International Journal of Science Technology & Engineering | Volume 3 | Issue 12 | June 2017 ISSN (online): 2349-784X
A Power Efficient, High Speed Reduction Technique using Domino Logic Ms. Jyoti Chaudhary Ideal Institute of Technology, Ghaziabad, AKTU, Lucknow, India
Ms. Juhi Jain Ideal Institute of Technology, Ghaziabad, AKTU, Lucknow, India
Abstract Domino logic based OR gate is proposed in this paper. Domino logic is the power reduction technique for the large circuit which uses NMOS only. In this paper we studied Previous domino logic OR gate depending on previous work. Proposed design, which is introduce new domino logic OR gate with power reduce technique and delay. We provide direct discharging path for the circuit while working. New design gives 74%reduction in power and 31% reduction in delay. Complete circuit is simulated using TSMC 90nm technology by applying 1v vdd. Keywords: Dynamic gates, evaluation phase, pre-charge phase and robustness ________________________________________________________________________________________________________ I.
INTRODUCTION
The area reduction and high performance advantages have made dynamic logic circuits a main implementation option for high performance circuits such as microprocessors. This performance advantage comes at the cost of high power dissipation. The domino logic is constructed by adding an inverter at the output of the dynamic gate. The basic construction of an (n-type) domino logic gate is shown in Fig 1.
Fig. 1: Basic Domino Logic Structure
The pull-down network (PDN) is constructed exactly as in complementary CMOS. When CLK =0, the Dynamic Node shown in figure 1 will be pre charged to Vdd as pmos is on. If CLK =1, the Dynamic Node is conditionally discharged based on the input values and the pull-down topology. The charge leakage at the dynamic node is compensated by using PMOS keeper transistor. Noise robustness of the domino logic can be improved by upsizing the PMOS keeper transistor which makes the keeper more conducting and thereby tries to maintain the charge at the Dynamic Node. Domino cells also have a speed advantage as they avoid contention when the cells switch, In addition to being able to achieve better output drive strength for input loading. In order to understand this, the input to a static cell drives both PMOS and NMOS transistors. Any input transition that causes the cell to switch logical states results in a PMOS transistor being turned off and an NMOS transistor being turned on, or vice versa. Since the inputs to the cell have finite rise and fall times, this means that during the transition period both the PMOS and the NMOS transistors are weakly on. This contention between the two transistors increases the input voltage level at which the cell switches. By increasing or decreasing the ratio of the PMOS to NMOS transistor size It is possible to speed up the rise or fall transition of a static cell. This, however, leads to the alternate transition becoming slower. Since both transitions are equally important in static cells, it is difficult to gain very much by skewing a particular transition. For this reason, the switching point of most static cells tends to be close to half the supply voltage level
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