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Reflectivity metrics for optimization of anti-reflection coatings on wafers with topography Mark D. Smith, Trey Graves, John Biafore, and Stewart Robertson KLA-Tencor Corp, 8834 N. Capital of Texas Hwy, Suite 301, Austin, TX

Abstract Anti-reflection coatings are commonly used in advanced photolithography in order to minimize CD variability caused by deviations in resist thickness and in the films and structures comprising the substrate. For a planar film stack, reflectivity calculations are a critical tool for optimization of parameters such as coating thicknesses and optical properties of anti-reflection coatings (TARCs and BARCs). However, with the exception of the first lithography layer, all layers on a production wafer have some degree of topography, so that reflectivity calculations for a planar film stack are not strictly correct. In this study, we evaluate three different reflectivity metrics that can be applied to wafers with topography: reflectivity for simplified planar film stacks, standing wave amplitude, and reflected diffraction efficiencies. Each of these metrics has a simple, physical meaning that will be described in detail in the presentation. We then evaluate how well these reflectivity metrics correlate with CD variability for two different example lithography steps: implant layers with STI (where a developable BARC might be used), and Litho-Etch-Litho-Etch style double patterning.

Introduction Anti-reflection coatings are typically used to make lithography processes more stable in the presence of process variations. The most common example is a CD swing curve, where reflections from the bottom surface of the resist film cause a sinusoidal variation in the printed CD as the resist thickness increases. A similar variation in the printed CD can also occur when the thickness of the layers under the resist change, due to a change in the reflectivity of the resist-substrate interface. However, anti-reflection coatings do more than simply alleviate swing effects – they make the lithographic process as a whole more robust. The reason for this overall improvement is that the standing wave pattern caused by reflections competes with the contrast of the desired printed image. When the standing wave pattern is reduced or eliminated, imaging of the desired pattern is improved. The standard method for optimization of an anti-reflection coating is to calculate the reflectivity. For a bottom anti-reflection coating (BARC), one would calculate the reflectivity of the resistsubstrate interface, while for a top anti-reflection coating (TARC), one would calculate the reflectivity of the entire stack. One can then optimize the thickness of the anti-reflection coating by choosing an ARC thickness that minimizes the change in reflectivity in the presence of different process variations. For example, to optimize for variations in the thickness of an underlying layer, an optimal BARC thickness would minimize the change in the substrate reflectivity when the thickness of the underlayer deviates from its target thickness. Calculation of the reflectivity is straightforward and very fast for planar film stacks. However, every layer except the first on a wafer has some degree of topography, so it is desirable to be able to Advances in Resist Materials and Processing Technology XXVII, edited by Robert D. Allen, Mark H. Somervell, Proc. of SPIE Vol. 7639, 763935 · © 2010 SPIE · CCC code: 0277-786X/10/$18 · doi: 10.1117/12.846540

Proc. of SPIE Vol. 7639 763935-1 Downloaded from SPIE Digital Library on 26 Mar 2010 to 192.146.1.254. Terms of Use: http://spiedl.org/terms


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