83242w

Page 1

Reticle intensity based Critical Dimension Uniformity to improve efficiency for DOMA correction in a foundry 1

Kin Wai Tang, 1Teng Hwee Ng, 1Lei Huang, 1Susan Ng, 1Thomas Ku, 2Wee Teck Chia, 2 Lin Chua, 2William Li, 2Aaron Chin, 3Aditya Dayal, 3Tom Vavul, 3Trent Hutchinson, 1

GLOBALFOUNDRIES Singapore Pte Ltd., 60 Woodlands Industrial Park D Street 2, Singapore, 528830 2

KLA-Tencor Singapore, No.4 Serangoon North Avenue 5, Singapore, 554532

3

KLA-Tencor Corporation, One Technology Drive, Milpitas, CA 95035, USA

Abstract As transistor dimensions shrinks, the requirement for wafer critical dimensions control is becoming increasingly challenging. The intra-field critical dimension uniformity (CDU) of the features on the reticle is one of the many sources of wafer CD variation. In this paper, we study how the CDU on the reticle can be obtained by using the intensity information collected during reticle inspection (iCDUTM) on the KLA-Tencor TeraScan reticle inspection tool. The collected CDU information of the reticle is then applied as an intra-field dose correction function to improve wafer intra-field CD uniformity. Using this method of extracting the reticle CDU from the intensity information allows for simple integration into a high-volume production environment and an improved capability for intra-field CDU correction without the need to expose any wafers for CD measurement nor any GDS design information. The ability to apply iCDU on prototype devices on first pass run can also accelerate device development. Keywords: iCDU, intra-field CDU, transistor performance, yield

Introduction Intra-field wafer CD uniformity has been reported as a significant contributor to yield loss in advanced technology nodes. Hence, intra-field reticle CD uniformities are often characterized and studied so that they can be compensated for, to reduce intra-field CD variation on the wafer. The typical process involves exposing a wafer in advance and performing wafer CD SEM measurement on many locations of a similar pitch within a reticle field, to obtain the intra-field CDU information. This information is then fed back to the scanner for intra-field dose correction (see Fig. 1). The drawbacks of this method is that the wafer level CDU information obtained is a combination of reticle, process and scanner factors and the selection of the measured featured and their pitch can influence the accuracy of the results. Isolated features would be more sensitive to focus variations than dense pitches and would thus become highly influenced by the condition of the scanner at the time the data was collected. Moreover, this method is extremely time-consuming and represents an inefficient use of engineering resources, as CD SEM recipes have to be set up for hundreds of measurement locations.

Metrology, Inspection, and Process Control for Microlithography XXVI, edited by Alexander Starikov, Proc. of SPIE Vol. 8324, 83242W 路 漏 2012 SPIE 路 CCC code: 0277-786X/12/$18 路 doi: 10.1117/12.916335

Proc. of SPIE Vol. 8324 83242W-1 Downloaded from SPIE Digital Library on 10 Apr 2012 to 192.146.1.12. Terms of Use: http://spiedl.org/terms


Turn static files into dynamic content formats.

Create a flipbook
Issuu converts static files into: digital portfolios, online yearbooks, online catalogs, digital photo albums and more. Sign up and create your flipbook.