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UV Inspection of EUV and EPL Reticles Donald W. Pettibone, KLA-Tencor Corporation Alan R. Stivers, Components Research, Intel Corporation P. J. S. Mangat, Motorola *DigitalDNA™ Laboratories Michael Lercel, NGL MCoC, Photronics/IBM Anthony Novembre, Bell Laboratories, Lucent Technologies
A UV inspection tool has been used to image and inspect Next Generation Lithography (NGL) reticles. Inspection images and simulations have been used to provide feedback to mask makers so that inspectability of NGL masks can be optimized. SCALPEL masks have high optical contrast and look much the same in reflection as conventional chrome-on-glass masks do in transmission. EPL stencil masks can be imaged well in reflection, but defects below the top surface (in the cutouts) may not be detectable optically. EUV masks made to date tend to have relatively low contrast, with line edge profiles that are complex due to interference effects. Simulation results show that improved EUV inspection images can be obtained with a low reflectivity absorbing layer and the proper choice of buffer layer thickness.
Introduction
A partnership, partially sponsored by NIST-ATP Cooperative Agreement #70NANB8H44024, has been formed to retire the technical risks associated with optical inspection of EUV and SCALPEL reticles. The members of this partnership are KLA-Tencor, Lucent Technologies, the EUV-LLC, Photronics, and Dupont Photomasks. The EUV-LLC is comprised of AMD, Infineon, Intel, Micron, and Motorola. In addition, Motorola has provided SCALPEL masks to the program. This program has three phases, each about one year in duration. In the first year, KLA-Tencor built a research tool and gathered information to support modeling efforts. In this, the second year, we are imaging and inspecting NGL reticles. The main goal this year is to establish the feasibility of optical inspection of NGL reticles at the 70 and 100 nm nodes. In the third year, KLA-Tencor plans to design a production prototype inspection system for NGL reticles. 6
Fall 2001
Yield Management Solutions
The emphasis to date in this program has been on providing feedback to mask makers so that mask design can be optimized for inspection. A number of NGL reticles have been imaged with a specially modified UV inspection system. Based on images and simulation results, recommendations have been made for changes in mask design that can improve the inspectability of NGL masks. Images and preliminary inspection results on some NGL masks will be presented in this paper. Simulations have been carried out which indicate that EUV masks can be optimized for inspectability. In particular, the absorber reflectivity at the inspection wavelength should be minimized, and the buffer layer thickness can be chosen to improve contrast. Research tool description
The research tool used in these studies is based on a KLA-Tencor high-NA UV inspection system. The operating wavelength is 364 nm, with a minimum pixel size of 150 nm. The system has been modified to accept all NGL reticle types. Due to the fact that NGL reticles do not have pellicles, special care has to be taken to avoid contaminants. A reticle SMIF pod developed by Asyst Technologies can be used to keep the reticles clean when not undergoing inspection. A transfer station has been built to transfer reticles from the SMIF pod to special