References The JEDEC guidelines and test standards referred in this document are listed below in Table 3. Table 3. Referred test standards JEP119A
A Procedure for Performing SWEAT
JEP159
Procedure for the Evaluation of Low-k/Metal Inter/Intra-Level Dielectric Integrity
JESD202
Method for Characterizing the Electromigration Failure Time Distribution of Interconnects Under Constant-Current and Temperature Stress
JESD214.01
Constant-Temperature Aging Method to Characterize Copper Interconnect Metallization for Stress-Induced Voiding
JESD22-A101D
Steady-State Temperature-Humidity Bias Life Test
JESD22-A108F
Temperature, Bias, and Operating Life
JESD22-A113A
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing
JESD241
Procedure for Wafer-Level DC Characterization of Bias Temperature Instabilities
JESD28A
Procedure for Measuring N-Channel MOSFET Hot-Carrier-Induced Degradation under DC Stress
JESD35A
Procedure for the Wafer-Level Testing of Thin Dielectrics
JESD60A
A Procedure for Measuring P-Channel MOSFET Hot-Carrier- Induced Degradation Under DC Stress
JESD61
Isothermal Electromigration Test Procedure
JESD78E
IC Latch-Up Test
JESD90
A Procedure for Measuring P-Channel MOSFET Negative Bias Temperature Instabilities
JESD92
Procedure for Characterizing Time- Dependent Dielectric Breakdown of Ultra-Thin Gate Dielectrics
Guidelines for reliability testing on circuit level
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