Annealing Free, High Quality CVD Graphene growth and Transfer R.
1, 2 Brajpuriya ,
T.
2 Dikonimos ,
F.
2 Buonocore
and N.
2 Lisi
1Amity
Institute of Nanotechnology, Amity University Haryana 2STL, Materials Technology Unit, Casaccia Research Centre, ENEA, 00123 Roma, Italy • On an industrial scale, it is still a great challenge for manufacturers to develop clean, efficient, economical, and scalable methods for the production of graphene. • Several growth and transfer related issues still need to find an answer: a fast and efficient method for growth of clean, uncontaminated graphene, and a transfer method onto arbitrary substrates, including plastics, which should be at the same time clean, cheap and green. • Graphene – a single atomic layer of carbon atoms tightly packed in a two-dimensional honeycomb lattice, ultrahigh optical transmissivity (98%), chemically inert with super strength and the ability to conduct heat and electricity better than any other known material . Fig. 1. Temperature profile of a typical 7stage CVD growth process.
Fig 2. As-received Cu foil and G film on Cu Graphene film transferred onto a SiO2/Si substrate (Right)
Fig. 3. Scheme of the CVD Reactor.
Fig. 4 Survey and Core level sprectra of C-1s. Inset shows the C KVV Auger spectra of C-1s Fig. 5.Improved wet chemical process
Conclusion: We have presented a fast, efficient and sustainable growth method to obtain high quality graphene, avoiding contamination during growth, and a green transfer method based on an organic molecule, cyclododecane, which grants high fidelity transfer onto arbitrary surfaces, including substrates which are sensitive to heat and to solvents. I would like to acknowledge ENEA, Rome, Italy for providing International Research fellowship.