MORPHOLOGY AND HARDNESS OF UNDOPED ZINC OXIDE NANO THIN FILMS GROWN BY SILAR METHOD S. Balamurali1, P. Parameshwaran2, N. Suryamurthy2, J. Thirumalai3 and R. Chandramohan1, 1 Annamalai
Chettiar Research Centre, Physics Department, Sree Sevugan Annamalai College, Devakottai-630303 2 Materials Science Group, IGCAR, Kalpakkam 3 Physics Department, BS Abdur Rahman University, Chennai chandramohan@gmail.com
Fig 1: X-RD pattern for 80 & 100 no
Fig 2: SEM micrograph of ZnO Sample with 80 & 100 no of dip.
۫ Fig 5: ZnO coated on Glass substrate at 400 ◌C. ۫ Fig 4 : ZnO coated on Glass substrate at 300 ◌C.
Fig 3: ZnO Coated on Glass Plate at RT.
Fig 6: ZnO coated on Glass substrate ۫ at 500 ◌C.
Conclusion:
Fig 7: Dipping Vs Avg Hardness of the ZnO Coated on Glass Plate.
A = ZnO Coated on Glass Plate at RT B = ZnO coated on Glass substrate at 300C C = ZnO coated on Glass substrate at 400C D = ZnO coated on Glass substrate at 500C
The Successive ionic layer adsorption and reaction method (SILAR) is simple, economical, and can be applied at room temperature for varieties of system. From this technique we can prepare a large area and commercial thin film. Undoped ZnO is an excellent system useful for several optoelectronic devices. Particularly for Gas Sensor, Solar Cells and Spintronic applications Metal doped and undoped ZnO thin films are useful.
The average “Sh” hardness value depends on annealing temperature. When the temperature is increased, the hardness value also increased. This happens for all films grown with different number of dippings. The hardness value can be tailored by altering temperature and number of dipping.