Crystal Growth
Techniques
E-FlipBook Series | Semiconductor Devices
Crystal Growth A crystal is a solid material whose constituent atoms, molecules, or ions are arranged in an orderly repeating pattern extending in all three spatial dimensions. Crystal growth is a major stage of a crystallization process, and consists in the addition of new atoms, ions, or polymer strings into the characteristic arrangement of a crystalline Bravais lattice. http://en.wikipedia.org/wiki/Crystal_growth
Crystal Growth
Crystal growth involves a variety of research fields ranging from surface physics, crystallography, and material sciences to condenser mater physics.
Czochralski Crystal Growth The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts, and synthetic gemstones.
http://en.wikipedia.org/wiki/Czochralski_process
Silicon needs to be isolated from naturally occuring silicon oxide materials • Silica (sand) • Quartz • Isolation process usually produces polycrystalline silicon Addition processing is required to convert polycrystalline silicon to monocrystalline silicon known as an ingot Ingots are sliced into wafers The Czochralski process is a common technique for single crystal growth The process is designed to give ingots specific properties and high purity 20% of wafer fabrication costs is for cleaning!
Silicon Growth: http://cnfolio.com/ELMnotes15
http://people.seas.harvard.edu/~jones/es154/lectu res/lecture_2/materials/materials.html
Semiconductor devices and fabrication http://cnfolio.com/ELMnotes15
Float Zone Crystal Growth Zone melting (or zone refining or floating zone process) is a group of similar methods of purifying crystals, in which a narrow region of a crystal is molten. This molten zone is moved along the crystal (in practice, the crystal is pulled through the heater).
http://en.wikipedia.org/wiki/Zone_melting
http://www.msc.cornell.edu/~dieck/crystal.html
The molten region melts impure solid at its forward edge and leaves a wake of purer material solidified behind it as it moves through the ingot.
Bridgman Method crystal growth The Bridgman technique is a method of growing single crystal ingots or boules..
http://cnx.org/content/m40280/latest/? collection=col10719/latest
It is a popular method of producing certain semiconductor crystals, such as gallium arsenide, II-V Crystals ( ZnSe, CdS, CdTe) and BGO, where the Czochralski process is more difficult.
www.mtixtl.com/xtlflyers/bridgman.doc http://en.wikipedia.org/wiki/Bridgman%E2%80%93Stockbarger_technique
http://serve.me.nus.edu.sg/nanomachining/wafer_preparation.htm
http://aam.mathematik.uni-freiburg.de/IAM/homepages/alfred/BSSBBDK.html
E-FlipBook Series | Semiconductor Devices
Crystal Growth
Techniques
Compiled and Edited by HAA Sidek Nov 2012