Journal of Solid State, Electronics & Devices (JoSSED) May - August 2014
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D. Nirmal Department of Electronics and Communication Engineering, School of Electrical Sciences, Karunya University, Coimbatore, India, India.
Sukumar Basu IC Design & Fabrication Centre, Department of Electronics and Telecomm. Engineering, Jadavpur University, Kolkata,India.
Vijay Arora IEEE-EDS Distinguished Lecturer Faculty of Electrical Engineering (FKE), Department of Electronics and Computer Engineering Universiti Teknologi Malaysia.
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STM JOURNALS
I take the privilege to present the print version for the Volume 1 Issue (2) of Journal of Solid State, Electronics and Devices. The intension of JoSSED is to create an atmosphere that stimulates creativeness, research and growth in the area of Solid, State, Electronics and Devices. The development and growth of the mankind is the consequence of brilliant Research done by eminent Scientists and Engineers in every field. JoSSED provides an outlet for Research findings and reviews in areas of solid, state, electronics and devices found to be relevant for National and International recent developments & research initiative. The aim and scope of the Journal is to provide an academic medium and an important reference for the advancement and dissemination of Research results that support high level learning, teaching and research in the domain of solid, state, electronics and devices. Finally,I would like to thank Authors for their continued support and invaluable contributions and suggestions in the form of authoring. I express my sincere gratitude and thanks to our Editorial/ Reviewer board for write ups/ reviewing and providing constructive comments for the advancement of the journals. With regards to their due continuous support and co-operation, we have been able to publish quality Research/Reviews findings for our customers base. I hope you will enjoy reading this issue and we welcome your feedback on any aspect of the Journal.
Dr. Archana Mehrotra Director STM Journals
Journal of Solid State, Electronics and Devices
Contents
1. Computation of Indium Concentration in Indium Gallium Arsenide Semiconductor at Terahertz Frequency Sahoo M. K., Palai G., Prasad B. 1
Journal of Solid State, Electronics and Devices Volume 1, Issue 2 www.stmjournals.com
Computation of Indium Concentration in Indium Gallium Arsenide Semiconductor at Terahertz Frequency Sahoo M. K.1, Palai G.2*, Prasad B.3 1
Government Polytechnic Sambalpur, Rengali, Sambalpur 768212, India Gandhi Institute for Technological Advancement (GITA), Bhubaneswar 752054, India 3 Gandhi Institute of Engineering &Technology (GIET), Gunupur, Rayagada 765022, India 2
Abstract Concentration of indium in indium gallium arsenide (InxGa1-xAs) is computed at optical signal having wavelength 589 nm . Reflection as well as absorption losses are considered to obtain the transmitted intensity. Analytical result showed that reflectance increases with increasing of indium concentration, where absorbance decreases with the same concentration. An experimental set up is designed to find out the transmitted intensity, which leads to the computation of concentration of indium in indium gallium arsenide semiconductor. Present simulation result showed that transmitted intensity increases exponentially (R2 = 0.9802) with respect to indium concentration, which varies from 0% to 30 %.
Keywords: InGaAs, reflectance, absorbance, transmitted intensity. *Author for Correspondence E-mail: gpalai28@gmail.com, g_pallai@yahoo.co.uk
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